• 제목/요약/키워드: asymmetric and symmetric voltage control

검색결과 6건 처리시간 0.017초

비대칭 전압 제어를 이용한 단상 임베디드 Z-소스 DC-AC 인버터 (A Single-Phase Embedded Z-Source DC-AC Inverter by Asymmetric Voltage Control)

  • 오승열;김세진;정영국;임영철
    • 전력전자학회논문지
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    • 제17권4호
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    • pp.306-314
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    • 2012
  • In case of the conventional DC-AC inverter using two DC-DC converters with unipolar output capacitor voltages, for generating the AC output voltage, the output capacitor voltages of its each DC-DC converter must be higher than the DC input voltage. To solve this problem, this paper proposes a single-phase DC-AC inverter using two embedded Z-source converters with bipolar output capacitor voltages. The proposed inverter is composed of two embedded Z-source converters with common DC source and output AC load. The AC output voltage is obtained by the difference of the output capacitor voltages of each converter. Though the output capacitor voltage of converter is relatively low compared to the conventional method, it can be obtained the same AC output voltage. Moreover, by controlling asymmetrically the output capacitor voltage, the AC output voltage of the proposed system is higher than the DC input voltage. To verify the validity of the proposed system, a DSP(TMS320F28335) based single-phase embedded Z-source DC-AC inverter was made and the PSIM simulation was performed under the condition of the DC source 38V. As controlled symmetrically and asymmetrically the output capacitor voltages of each converter, the proposed inverter could produce the AC output voltage with sinusoidal waveform. Particularly, in case of asymmetric control, a higher AC output voltage was obtained. Finally, the efficiency of the proposed system was measured as 95% and 97% respectively in case of symmetric and asymmetric control.

Charge Balance Control Methods for a Class of Fundamental Frequency Modulated Asymmetric Cascaded Multilevel Inverters

  • Babaei, Ebrahim
    • Journal of Power Electronics
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    • 제11권6호
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    • pp.811-818
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    • 2011
  • Modulation strategies for multilevel inverters have typically focused on synthesizing a desired set of sinusoidal voltage waveforms using a fixed number of dc voltage sources. This makes the average power drawn from different dc voltage sources unequal and time varying. Therefore, the dc voltage sources are unregulated and require that corrective control action be incorporated. In this paper, first two new selections are proposed for determining the dc voltage sources values for asymmetric cascaded multilevel inverters. Then two modulation strategies are proposed for the dc power balancing of these types of multilevel inverters. Using the charge balance control methods, the power drawn from all of the dc sources are balanced except for the dc source used in the first H-bridge. The proposed control methods are validated by simulation and experimental results on a single-phase 21-level inverter.

10 nm이하 비대칭 이중게이트 MOSFET의 하단 게이트 전압에 따른 터널링 전류 분석 (Analysis of Tunneling Current for Bottom Gate Voltage of Sub-10 nm Asymmetric Double Gate MOSFET)

  • 정학기
    • 한국정보통신학회논문지
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    • 제19권1호
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    • pp.163-168
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    • 2015
  • 본 연구에서는 10 nm이하 채널길이를 갖는 비대칭 이중게이트 MOSFET의 하단 게이트 전압에 대한 터널링 전류(tunneling current)의 변화에 대하여 분석하고자한다. 단채널 효과를 감소시키기 위하여 개발된 다중게이트 MOSFET중에 비대칭 이중게이트 MOSFET는 채널전류를 제어할 수 있는 요소가 대칭형의 경우보다 증가하는 장점을 지니고 있다. 그러나 10nm 이하 채널길이를 갖는 비대칭 이중게이트 MOSFET의 경우, 터널링 전류에 의한 차단전류의 증가는 필연적이다. 본 연구에서는 차단전류 중에 터널링 전류의 비율을 계산함으로써 단채널에서 발생하는 터널링 전류의 영향을 관찰하고자 한다. 포아송방정식을 이용하여 구한 해석학적 전위분포와 WKB(Wentzel-Kramers-Brillouin) 근사를 이용하여 터널링 전류를 구하였다. 결과적으로 10 nm이하의 채널길이를 갖는 비대칭 이중게이트 MOSFET에서는 하단 게이트 전압에 의하여 터널링 전류가 크게 변화하는 것을 알 수 있었다. 특히 채널길이, 상하단 산화막 두께 그리고 채널두께 등에 따라 매우 큰 변화를 보이고 있었다.

소자 파라미터에 따른 비대칭 DGMOSFET의 문턱전압이하 스윙 분석 (Analysis of Subthreshold Swing Mechanism by Device Parameter of Asymmetric Double Gate MOSFET)

  • 정학기
    • 한국정보통신학회논문지
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    • 제19권1호
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    • pp.156-162
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    • 2015
  • 본 연구에서는 비대칭 이중게이트 MOSFET의 산화막두께, 채널도핑농도 그리고 상하단 게이트 전압 등과 같은 소자 파라미터에 따른 전도중심 및 전자농도가 문턱전압이하 스윙에 미치는 영향을 분석하고자 한다. 비대칭 이중게이트 MOSFET는 대칭구조와 비교하면 상하단 게이트 산화막의 두께 및 게이트 전압을 각각 달리 설정할 수 있으므로 단채널효과를 제어할 수 있는 요소가 증가하는 장점을 가지고 있다. 그러므로 상하단 산화막두께 및 게이트 전압에 따른 전도중심 및 전자분포의 변화를 분석하여 심각한 단채널효과인 문턱전압이하 스윙 값의 저하 현상을 감소시킬 수 있는 최적의 조건을 구하고자 한다. 문턱전압이하 스윙의 해석학적 모델을 유도하기 위하여 포아송방정식을 이용하여 전위분포의 해석학적 모델을 구하였다. 결과적으로 소자 파라미터에 따라 전도중심 및 전자농도가 크게 변화하였으며 문턱전압이하 스윙은 상하단 전도중심 및 전자농도에 의하여 큰 영향을 받는 것을 알 수 있었다.

3상 임베디드 Z-소스 인버터 (Three Phase Embedded Z-Source Inverter)

  • 오승열;김세진;정영국;임영철
    • 전력전자학회논문지
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    • 제17권6호
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    • pp.486-494
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    • 2012
  • In this paper, we proposes the three-phase embedded Z-source inverter consisting of the three embedded Z-source converters and it's the output voltage control method. Each embedded Z-source converter can produce the bipolar output capacitor voltages according to duty ratio D such as single-phase PWM inverter. The output AC voltage of the proposed system is obtained as the difference in the output capacitor voltages of each converter, and the L-C output filter is not required. Because the output AC voltage can be stepped up and down, the boost DC converter in the conventional two-stage inverter is unnecessary. To confirm the validity of the proposed system, PSIM simulation and a DSP based experiment were performed under the condition of the input DC voltage 38V, load $100{\Omega}$, and switching frequency 30kHz. Each converter is connected by Y-connection for three-phase loads. In case that the output phase voltage is the same $38V_{peak}$ as the input DC voltage and is the 1.5 times($57V_{peak}$), the simulation and experimental results ; capacitor voltages, output phase voltages, output line voltages, inductor currents, and switch voltages were verified and discussed.

A New Design for Cascaded Multilevel Inverters with Reduced Part Counts

  • Choupan, Reza;Nazarpour, Daryoush;Golshannavaz, Sajjad
    • Transactions on Electrical and Electronic Materials
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    • 제18권4호
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    • pp.229-236
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    • 2017
  • This paper deals with the design and implementation of an efficient topology for cascaded multilevel inverters with reduced part counts. In the proposed design, a well-established basic unit is first developed. The series extension of this unit results in the formation of the proposed multilevel inverter. The proposed design minimizes the number of power electronic components including insulated-gate bipolar transistors and gate driver circuits, which in turn cuts down the size of the inverter assembly and reduces the operating power losses. An explicit control strategy with enhanced device efficiency is also acquired. Thus, the part count reductions enhance not only the economical merits but also the technical features of the entire system. In order to accomplish the desired operational aspects, three algorithms are considered to determine the magnitudes of the dc voltage sources effectively. The proposed topology is compared with the conventional cascaded H-bridge multilevel inverter topology, to reflect the merits of the presented structure. In continue, both the analytical and experimental results of a cascaded 31-level structure are analyzed. The obtained results are discussed in depth, and the exemplary performance of the proposed structure is corroborated.