• The Transactions of the Korean Institute of Power Electronics
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• v.17 no.4
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• pp.306-314
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• 2012

In case of the conventional DC-AC inverter using two DC-DC converters with unipolar output capacitor voltages, for generating the AC output voltage, the output capacitor voltages of its each DC-DC converter must be higher than the DC input voltage. To solve this problem, this paper proposes a single-phase DC-AC inverter using two embedded Z-source converters with bipolar output capacitor voltages. The proposed inverter is composed of two embedded Z-source converters with common DC source and output AC load. The AC output voltage is obtained by the difference of the output capacitor voltages of each converter. Though the output capacitor voltage of converter is relatively low compared to the conventional method, it can be obtained the same AC output voltage. Moreover, by controlling asymmetrically the output capacitor voltage, the AC output voltage of the proposed system is higher than the DC input voltage. To verify the validity of the proposed system, a DSP(TMS320F28335) based single-phase embedded Z-source DC-AC inverter was made and the PSIM simulation was performed under the condition of the DC source 38V. As controlled symmetrically and asymmetrically the output capacitor voltages of each converter, the proposed inverter could produce the AC output voltage with sinusoidal waveform. Particularly, in case of asymmetric control, a higher AC output voltage was obtained. Finally, the efficiency of the proposed system was measured as 95% and 97% respectively in case of symmetric and asymmetric control.

• Journal of Power Electronics
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• v.11 no.6
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• pp.811-818
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• 2011

Modulation strategies for multilevel inverters have typically focused on synthesizing a desired set of sinusoidal voltage waveforms using a fixed number of dc voltage sources. This makes the average power drawn from different dc voltage sources unequal and time varying. Therefore, the dc voltage sources are unregulated and require that corrective control action be incorporated. In this paper, first two new selections are proposed for determining the dc voltage sources values for asymmetric cascaded multilevel inverters. Then two modulation strategies are proposed for the dc power balancing of these types of multilevel inverters. Using the charge balance control methods, the power drawn from all of the dc sources are balanced except for the dc source used in the first H-bridge. The proposed control methods are validated by simulation and experimental results on a single-phase 21-level inverter.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.163-168
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• 2015

This paper analyzed the deviation of tunneling current for bottom gate voltage of sub-10 nm asymmetric double gate MOSFET. The asymmetric double gate MOSFET among multi gate MOSFET developed to reduce the short channel effects has the advantage to increase the facts to be able to control the channel current, compared with symmetric double gate MOSFET. The increase of off current is, however, inescapable if aymmetric double gate MOSFET has the channel length of sub-10 nm. The influence of tunneling current was investigated in this study as the portion of tunneling current for off current was calculated. The tunneling current was obtained by the WKB(Wentzel-Kramers-Brillouin) approximation and analytical potential distribution derived from Poisson equation. As a results, the tunneling current was greatly influenced by bottom gate voltage in sub-10 nm asymmetric double gate MOSFET. Especially it showed the great deviation for channel length, top and bottom gate oxide thickness, and channel thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.156-162
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• 2015

This paper has analyzed how conduction path and electron concentration for the device parameters such as oxide thickness, channel doping, and top and bottom gate voltage influence on subthreshold swing of asymmetric double gate MOSFET. Compared with symmetric and asymmetric double gate MOSFET, asymmetric double gate MOSFET has the advantage that the factors to be able to control the short channel effects increase since top and bottom gate oxide thickness and voltages can be set differently. Therefore the conduction path and electron concentration for top and bottom gate oxide thickness and voltages are investigated, and it is found the optimum conditions that the degradation of subthreshold swing, severe short channel effects, can reduce. To obtain the analytical subthreshold swing, the analytical potential distribution is derived from Possion's equation. As a result, conduction path and electron concentration are greatly changed for device parameters, and subthreshold swing is influenced by conduction path and electron concentration of top and bottom.

• The Transactions of the Korean Institute of Power Electronics
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• v.17 no.6
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• pp.486-494
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• 2012

In this paper, we proposes the three-phase embedded Z-source inverter consisting of the three embedded Z-source converters and it's the output voltage control method. Each embedded Z-source converter can produce the bipolar output capacitor voltages according to duty ratio D such as single-phase PWM inverter. The output AC voltage of the proposed system is obtained as the difference in the output capacitor voltages of each converter, and the L-C output filter is not required. Because the output AC voltage can be stepped up and down, the boost DC converter in the conventional two-stage inverter is unnecessary. To confirm the validity of the proposed system, PSIM simulation and a DSP based experiment were performed under the condition of the input DC voltage 38V, load $100{\Omega}$, and switching frequency 30kHz. Each converter is connected by Y-connection for three-phase loads. In case that the output phase voltage is the same $38V_{peak}$ as the input DC voltage and is the 1.5 times($57V_{peak}$), the simulation and experimental results ; capacitor voltages, output phase voltages, output line voltages, inductor currents, and switch voltages were verified and discussed.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.229-236
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• 2017

This paper deals with the design and implementation of an efficient topology for cascaded multilevel inverters with reduced part counts. In the proposed design, a well-established basic unit is first developed. The series extension of this unit results in the formation of the proposed multilevel inverter. The proposed design minimizes the number of power electronic components including insulated-gate bipolar transistors and gate driver circuits, which in turn cuts down the size of the inverter assembly and reduces the operating power losses. An explicit control strategy with enhanced device efficiency is also acquired. Thus, the part count reductions enhance not only the economical merits but also the technical features of the entire system. In order to accomplish the desired operational aspects, three algorithms are considered to determine the magnitudes of the dc voltage sources effectively. The proposed topology is compared with the conventional cascaded H-bridge multilevel inverter topology, to reflect the merits of the presented structure. In continue, both the analytical and experimental results of a cascaded 31-level structure are analyzed. The obtained results are discussed in depth, and the exemplary performance of the proposed structure is corroborated.