• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 2001.11a
• /
• pp.179-185
• /
• 2001

High performance characteristics are required for rolling bearings and the various functions of bearing are greatly influenced by grease. Recently, higher performance is being demanded of rolling bearing greases for bearing lubrication. Four special greases with different composition such as lithium soap/ester oil, urea/ester oil, urea/ether oil and PTFE/fluorine oil were synthesized to compare the performance of these greases with that of the conventional lithium soap/mineral oil grease. The grease properties were investigated using a series of typical grease testing methods and grease life test. After the life test, the greases were charaterized by FTIR analysis and a microscope. And the iron amount in the greases was analyzed by AAS after ashing. The composition and manufacturing process determined the grease performance. The grease with a base oil of synthetic oil showed higher performance and the urea/ester oil and PTFE/fluorine oil showed about three times longer life as compared with conventional lithium grease.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.49 no.8
• /
• pp.487-494
• /
• 2000

This paper describes the design, fabrication and experiments of surface-micromachined aluminum micromirror array with hidden pin-joints. Instead of the conventional elastic spring components as connection between mirror plate and supporting structure, we used pin-joint composed of pin and staples to support the mirror plate. The placement of pin-joint under the mirror plate makes large active surface area possible. These flexureless micromirrors are driven by electrostatic force. As the mirror plate has discrete deflection angles, the device can be ap;lied to adaptive optics and digitally-operating optical applications. Four-level metal structural layers and semi-cured photoresist sacrificial layers were used in the fabrication process and sacrificial layers were removed by oxygen plasma ashing. Static characteristics of fabricated samples were measured and compared with modeling results.

• Journal of the Semiconductor & Display Technology
• /
• v.19 no.3
• /
• pp.55-60
• /
• 2020

The hard mask photo-resist strip inspection system for the semiconductor wafer manufacturing process inspects the position of the circuit pattern formed on the wafer by measuring the distance from the edge of the wafer to the strip processing area. After that, it is an inspection system that enables you to check the process status in real time. Process defects can be significantly reduced by applying a tester that has not been applied to the existing wafer strip process, edge etching process, and wafer ashing process. In addition, it is a technology for localizing semiconductor process inspection equipment that can analyze the outer diameter of the wafer and the state of pattern formation, which can secure process stability and improve wafer edge yield.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.103-104
• /
• 2007

Nanometer-scaled polymer beads, such as polystyrene beads, were used as nanometer fabrication materials due to their some advantages such as self-assembled monolayer, nanometer scaled size and excellent compatibility with silicon based devices. Thus, the investigation on these properties of polymer beads was required. It is difficult to control the array of polystyrene beads on silicon substrate. In this study, we investigated the condition of selective array of polystyrene beads on nanometer-scaled hydrophilic surface which was obtained by APS coating. A tilting method was used to array the polystyrene beads selectively on the substrate. The polystyrene beads could be arrayed selectively by this method. From these results, we verified that there are possibilities to fabricate unique tools for the nanometer-scaled electrical devices.

• Proceedings of the KAIS Fall Conference
• /
• 2008.05a
• /
• pp.302-305
• /
• 2008

본 논문에서는 상압 플라즈마 방식이 적용된 반도체 에싱공정의 포토레지스트 에싱율을 향상시키기 위한 연구가 수행되었다. 웨이퍼 표면에 도포된 포토레지스트의 에싱율을 높이기 위하여 공정에 다구찌 기법을 적용하여 실험하였다. 유의한 인자를 파악하고 적합한 인자의 조합을 결정하여 에싱율 향상을 위한 효율적인 접근을 시도하였다. 이 연구는 상압플라즈마 방식이 적용된 에싱공정에서 개별 인자가 지니고 있는 시스템에 대한 기여율에 대하여 나타내었으며 또한 포토레지스트 에싱에 대한 플라즈마의 효용성을 보여준다.

• Korean Journal of Food Science and Technology
• /
• v.15 no.3
• /
• pp.225-230
• /
• 1983

Aqua-regia method is reported for simultaneous determination of potassium, sodium, calcium, magnesium, zinc, manganese, copper and iron in high-fat fish tissue. Samples are digested with conc nitric and conc hydrochloric acid in a volumetric flask. After digestion, aqua-regia extracts of samples are analyzed by direct flame atomic absorption spectrophotometry. The aqua-regia method is compared with dry ashing method and $H_{2}SO_{4}-HNO_{3}$ method. For quantiative determination of calcium, magnesium and zinc, the aqua-regia method and dry ashing method are superior to $H_{2}SO_{4}-HNO_{3}$ method. In case of the other elements-potassium, sodium, manganese, copper and iron-the three methods gave the similar results. Because samples can be processed by aqua-regia method easily, rapidily, cheaply and safely, aqua-regia method is suitable for the routine preparation of a large number of samples simultaneously.

• Korean Chemical Engineering Research
• /
• v.43 no.1
• /
• pp.27-32
• /
• 2005

We propose an effective and environmentally friendly dry stripping method using a supercritical carbon dioxide ($SCCO_2$) system modified by a single and multiple cosolvents to remove ion-implanted photoresist and residue from a wafer surface at three different temperatures (97, 148, $200^{\circ}C$) and pressures (200, 300, 400 bar). After high dose of ion implantation the photoresist was not easily removed by using pure $SCCO_2$, but swollen. The $SCCO_2$ system modified by single cosolvents and multiple cosolvents mixed with aprotic solvents could not effectively remove the heavy organics, but swell them. However, the $SCCO_2$ system modified with multiple cosolvent (5%, v/v) composed of DMSO and DIW showed high removal efficiency for ion-implanted photoresists at $97^{\circ}C$ and 200 bar for 30 min (about 80%). In this study it has been shown that the dry stripping method using $SCCO_2$ system modified with multiple cosolvents could replace either plasma ashing or acid and solvent wet bench method and dramatically reduce accompanied chemical usage and disposal.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.1 no.2
• /
• pp.132-139
• /
• 2001

We considered the uniformity of fabricated micromirror arrays by characterizing the fabrication process and calculating the appropriate driving voltages of micromirrors used as virtual photomask in maskless photolithography. The uniformity of the micromirror array in terms of driving voltage and optical characteristics is adversely affected by factors, such as the air gap between the bottom electrode and the mirror plate, the spring shape and the deformation of the mirror plate or torsion spring. The thickness deviation of the photoresist sacrificial layer, the misalignment between mirror plate and bottom electrode, the aluminum deposition condition used to produce the spring and the mirror plate, and initial mirror deflection were identified as key factors. Their importance lies in the fact that they are related to air gap deviations under the mirror plate, asymmetric driving voltages in left and right mirror directions, and the deformation of the Al sring or mirror plate after removal of the sacrificial layer. The plasma ashing conditions used for removing the sacrificial layer also contributed to the deformation of the mirror plate and spring. Driving voltages were calculated for the pixel operation of the micromirror array, and the non-uniform characteristics of fabricated micromirrors were taken into consideration to improve driving performance reliability.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.10
• /
• pp.546-550
• /
• 2004

Two fabrication approaches are proposed to planarize the sacrificial layer over hollow structures. One is the photoresist filling method that makes use of photolithography, thermal curing and plasma ashing. The other is the lamination method that is applying pressure and temperature to the organic film over the hollow structures. The fabrication results are compared with those of CMP process. Trenches and cavities with various dimensions have been made for the porposed process. Upon measuring the planarization levels, they are dependent on planarization methods and the geometrical size of hollow structures. The photoresist filling method is so strongly dependent on the width and depth of trenches that we have problems to use it for large dimensional trenches. To the contrary, the flatness of sacrificial layer over the trenches was found to be almost independent of trench dimensions for the lamination method. A CMP process shows the most excellent results, but the fabrication is complicated and the access to it is not so easy. It is important to choose the proper planarization method by considering the required flatness levels, materials to be planarized, and connection between the planarization step and the previous or the following process of it.

• Journal of the Korean Vacuum Society
• /
• v.5 no.2
• /
• pp.113-118
• /
• 1996

Aligning a cathode tip at the center of a gate hole is important in gated filed emission devices. We have fabricated a silicon field emitter using a following process so that a cathode and a gate hole are automatically aligned . After forming silicon tips on a silicon wafer, the wafer was covered with the $SiO_2$, gate metal, and photoresistive(PR) films. Because of the viscosity of the PR films, a spot where cathode tips were located protruded above the surface. By ashing the surface of the PR film, the gate metal above the tip apex was exposed when other area was still covered with the PR film. The exposed gate metal and subsequenlty the $SiO_2$ layer were selectively etched. The result produced a field emitter in which the gate film was in volcano shape and the cathode tip was located at the center of the gate hole. Computer simulation showed that the volcano shape and the cathode tip was located at the center of the gat hole. Computer simulation showed that the volcano shape emitter higher current and the electron beam which was focused better than the emitter for which the gate film was flat.