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Stripping of Ion-Implanted Photoresist Using Cosolvent-Modified Supercritical Carbon Dioxide  

Jung, In-Il (Department of Chemical and Biochemical Engineering, The University of Suwon)
Kim, Ju-Won (Department of Chemical and Biochemical Engineering, The University of Suwon)
Lee, Sang-Yun (Department of Chemical Engineering, Yonsei University)
Kim, Woo-Sik (Department of Chemical Engineering, Yonsei University)
Ryu, Jong-Hoon (Department of Chemical and Biochemical Engineering, The University of Suwon)
Lim, Gio-Bin (Department of Chemical and Biochemical Engineering, The University of Suwon)
Publication Information
Korean Chemical Engineering Research / v.43, no.1, 2005 , pp. 27-32 More about this Journal
Abstract
We propose an effective and environmentally friendly dry stripping method using a supercritical carbon dioxide ($SCCO_2$) system modified by a single and multiple cosolvents to remove ion-implanted photoresist and residue from a wafer surface at three different temperatures (97, 148, $200^{\circ}C$) and pressures (200, 300, 400 bar). After high dose of ion implantation the photoresist was not easily removed by using pure $SCCO_2$, but swollen. The $SCCO_2$ system modified by single cosolvents and multiple cosolvents mixed with aprotic solvents could not effectively remove the heavy organics, but swell them. However, the $SCCO_2$ system modified with multiple cosolvent (5%, v/v) composed of DMSO and DIW showed high removal efficiency for ion-implanted photoresists at $97^{\circ}C$ and 200 bar for 30 min (about 80%). In this study it has been shown that the dry stripping method using $SCCO_2$ system modified with multiple cosolvents could replace either plasma ashing or acid and solvent wet bench method and dramatically reduce accompanied chemical usage and disposal.
Keywords
Supercritical Cleaning; Ion-implanted Photoresist; Dry Cleaning;
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