• Economic and Environmental Geology
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• v.42 no.5
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• pp.487-494
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• 2009

The purpose of this study was to investigate the feasibility of As(V) reduction by aqueous Fe(II), and subsequent As(III) immobilization by the precipitation of As(III) incorporated magnetite-like material [i.e., co-precipitation of As(III) with Fe(II) and Fe(III)]. Experimental results showed that homogeneous As(V) reduction did not occur by dissolved Fe(II) at various pH values although the thermodynamic calculation was in favor of the redox reaction between As(V) and Fe(II) under the given chemical conditions. Similarly, no heterogeneous reduction of sorbed As(V) by sorbed Fe(II) was observed using synthetic iron (oxy)hydroxide (Goethite, ${\alpha}$-FeOOH) at pH 7. Experimental results for the effect of As(V) on the oxidation of Fe(II) by dissolved oxygen showed that As(V) inhibited the oxidation of Fe(II). These results indicate that As(V) could be stable in the presence of Fe(II) under the anoxic or subsurface environments.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.211-216
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• 2010

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.5}Al_{0.5}As$ buffer layers have been studied by using photoluminescence (PL) and time-resolved PL measurements. A$1-{\mu}m$ thick $In_{0.5}Al_{0.5}As$ buffer layers were deposited on a 500 nm thick GaAs layer, followed by the deposition of the InGaAs/InAlAs MQWs. In order to investigate the effects of InAlAs buffer layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of InAlAs buffer layer. The growth temperature for InAlAs buffer layer was varied from 320^{\circ}C to $580^{\circ}C$. The MQWs consist of three $In_{0.5}Ga_{0.5}$As wells with different well thicknesses (2.5 nm, 4.0 nm, and 6.0 nm thick) and 10 nm thick $In_{0.5}Al_{0.5}$As barriers. The PL spectra from the MQWs with InAlAs layer grown at lower temperature range ($320-580^{\circ}C$) showed strong peaks from 4 nm QW and 6 nm QW. However, for the MQWs with InAlAs buffer grown at higher temperature range ($320-480^{\circ}C$), the PL spectra only showed a strong peak from 6 nm QW. The strongest PL intensity was obtained from the MQWs with InAlAs layer grown at the fixed temperature of $480^{\circ}C$, while the MQWs with buffer layer grown at higher temperature from $530^{\circ}C$ to $580^{\circ}C$ showed the weakest PL intensity. From the emission wavelength dependence of PL decay times, the fast and slow decay times may be related to the recombination of carriers in the 4 nm QW and 6 nm QW, respectively. These results indicated that the growth temperatures of InAlAs layer affect the structural and optical properties of the MQWs.

• Microbiology and Biotechnology Letters
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• v.24 no.5
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• pp.613-618
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• 1996

Microorganisms capable of producing ascorbic acid-2-phosphate (AsA2P) from ascorbic acid (AsA) and pyrophosphate (PPi) were screened from the culture collection of this laboratory. Among them, Cellulomonas sp. AP-7 showed the highest productivity of AsA2P. The optimal conditions for the production of AsA2P from AsA and PPi with cell-free extract as an enzyme source were investigated. The reaction mixture for the maximal production of AsA2P consisted of 21 g protein of cell-free extract per liter as the enzyme source, 250 mM AsA, 200 mM sodium pyrophosphate, 150 mM sodium acetate buffer (pH 4.5). By using this reaction mixture, 31.9 mM of AsA2P, which corresponded to a 12.76% yield based on AsA, was produced after incubation of 48 hr at 33$\circ$C.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.4
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• pp.226-231
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• 1999

Temperature dependence of effective ionization coefficients in GaAs is formulated as a single polynomial function of temperature, which allows analytical expressions for breakdown voltage of GaAs $p^+n$ junctions as a function of temperature. At 300 K, extracted effective ionization coefficient of GaAs $p^+n$ junction especially agrees well with the published result of <111> oriented GaAs. The analytic results agree with the simulation as well as the experimental ones reported within 10% in error for the doping concentrations in the range of $10_{14}cm_{-3}~10_{17}cm_{-3}$ at 100 K, 300 K and 500 K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.10-12
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• 1996

AlGaAs/GaAs Heterojunotion Bipolar Transistors (HBTs) with various emitter areas were fabricated and the device size dependence on the current gain was examined. With the different emitter areas, the passivated devices having the same peripheral length were fabricated and measured. The measured base current density in the Gummel plots shows an ideality factor of nearly 2. It is found that as the emitter area becomes small, the base current density with the ideality factor of 2 increases linearly, and as the emitter perimeter/area ratio becomes large, the surface recombination current density component increases. The current gain performance in AlGaAs/GaAs HBTs is mainly determined by either the larger emitter area or the smaller ratio of the emitter perimeter to the emitter area. These results will be compared with experimental works for GaInP/GaAs HBTs

• Journal of the Korean housing association
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• v.4 no.2
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• pp.63-71
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• 1993

This study is to find mental element and principle for building as the side of tranditional ideas and to understand dwelling from and style by this wag. So we can understand yang taeg theory as a part of feng shui that controls the mental, field of traditional architecture. The results may besummarised as follows. 1. Mentalprinciple of traditional architecfure being understood as a "역" is to result is not the concept of shape as materials and in but that of phase as a spririt. 2. In yang taeg theory, architectural behavior (as selecting site, building and the day for building) is made form the base of that, a human being as a part of universe. 3. Geomantic aspect, to being, laid in an fying a human being and nature as spatial, time concept. 4. The concept of domain in feng-shui is found in village as well as in house.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.206-212
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• 1996

$In_{1-x}Ga_xAs$ epitaxial layers were grown at 76 Torr by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Growth rate did not change much with growth temperature. Surface morphology of $In_{1-x}Ga_xAs$ epitaxial layer was affected by lattice mismatch, growth temperature and $AsH_3/(TMIn+TMGa)$ ratio. A high quality epilayer showed a full width at half maximum of 2.8 meV by photoluminescence measurement at 5K. The composition of the $In_{1-x}Ga_xAs$ was determined by the relative gas phase diffusion of TMIn and TMGa. Lattice mismatch and growth temperature were the most important variables that determine the electrical properties of $In_{1-x}Ga_xAs$ epitaxial layers. At optimized growth condition, it was possible to obtain a high quality $In_{1-x}Ga_xAs$ epilayers with a electron concentration as low as $8{\times}10^{14}/cm^3$ and an electron mobility as high as 11,000$\textrm{cm}^2$/Vsec at room temperature.

• Journal of Nutrition and Health
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• v.49 no.1
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• pp.1-7
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• 2016

Purpose: The aim of this review is to comprehensively summarize the definition of vitamin D as a nutrient as well as a hormone-like molecule and its new function in prevention of various chronic diseases. Methods: The review was written by the method for systematic reivew writing. Literatures from the various sources, including research articles, book chapters, proceedings and electronic materials as appropriate, were screened first and then reviewed and analyzed for the review. Results: Vitamin D was originally considered as the essential nutrient as a vital carbon compound and was first discovered among children with osteomalacia, also known as ricket disease, characterized by poorly calcified bones which were easily bent rather than broken. Since that time, vitamin D has been known as the key nutrient to improve bone health. However, recently emerging study findings have shown that vitamin D acts as the hormone-like nutrient since it is synthesized like a hormone when our body needs and this particular vitamin also acts like a cell signaling ligand which regulates gene expression of various proteins. So far positive effects of vitamin D have been suggested for the action of anticancer, anti-immune function, and anti-cardiovascular disease, as well as antidiabetic function, etc. In this review, the definition for vitamin D as a nutrient vitamin as well as a hormone-like molecule, cell signaling mechanism of vitamin D, and finally the potential role for the prevention of chronic diseases are discussed. Conclusion: Vitamin D is now being considered as a vital nutrient as a vitamin and as a potential substance for prevention of several chronic diseases.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.328-333
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• 1998

Lattice-matched InAIAs epilayers were grown on (001) InP substrate by low pressure metalorganic chemical vapor deposition. The effects of growth conditions on the properties of InAIAs were analyzed, and InGaAs/InAIAs single and multiple quantum wells were successfully grown. It was observed that the optical property of InAIAs epilayers was improved in the temperature range of 620~$700^{\circ}C$ as the growth temperature increased due to the reduction of oxygen incorporation, however, the crystallinity decreased at temperatures higher than $750^{\circ}C$ due to the degraded crystallinity of the bufter layers. The enhanced incorporation of AI into epilayer was observed at high $AsH_3$flow rates and it was explained in terms of the differences in bond strengths of AI-As and In-As. The measured photoluminescence peak energies from InGaAs/InAIAs single quantum wells were consistent with the calculated ones based on transfer matrix method. High-order satellite peaks and fine thickness fringes were observed by high-resolution x-ray diffraction, implying that the high-quality multiple quantum wells with abrupt heterointerfaces were grown.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.635-639
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• 2003

We investigated dry etching of GaAs and AiGaAs in a high density planar inductively coupled plasma system with BCl$_3$and BCl$_3$/Ar gas chemistry. A detailed etch process study of GaAs and ALGaAs was peformed as functions of ICP source power, RIE chuck power and mixing ratio of $BCl_3$ and Ar. Chamber process pressure was fixed at 7.5 mTorr in this study. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RIE chuck power. It was also found that etch rates of GaAs in $15BCi_3$/5Ar plasmas were relatively high with applied RIE chuck power compared to pure 20 sccm $BCl_3$plasmas. The result was the same as AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AlGaAs features etched at 20 sccm $BCl_3$and $15BCl_3$/5Ar with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.