• 제목/요약/키워드: aperture mask

검색결과 41건 처리시간 0.019초

FIB 밀링을 이용한 나노스텐실 제작 및 나노패터닝 (Fabrication of nanostencil using FIB milling for nanopatterning)

  • 정성일;오현석;김규만
    • 한국정밀공학회지
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    • 제23권3호
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    • pp.56-60
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    • 2006
  • A high-resolution shadow mask, or called a nanostencil was fabricated for high resolution lithography. This high-resolution shadowmask was fabricated by a combination or MEMS processes and focused ion beam (FIB) milling. 500 nm thick and $2{\times}2mm$ large membranes wore made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. A subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to the high resolution of the FIB milling process, nanoscale apertures down to 70 nm could be made into the membrane. By local deposition through the apertures of nanostencil, nanoscale patterns down to 70 nm could be achieved.

FIB 밀링을 이용한 나노스텐실 제작 (Nanostencil fabrication using FIB milling)

  • 김규만;정성일;오현석
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2004년도 추계학술대회 논문집
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    • pp.871-874
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    • 2004
  • Fabrication of a high-resolution shadow mask, or called nanostencil, is presented. This high-resolution shadowmask is fabricated by a combination of MEMS processes and focused ion beam (FIB) milling. 500 nm thick and 2x2 mm large membranes are made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. Subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to high resolution of FIB milling process, nanoscale apertures down to 70 nm could be made into the membrane.

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AttPSM을 사용하는 Metal Layer 리토그라피공정의 Overlay와 Side-lobe현상 방지 (Overlay And Side-lobe Suppression in AttPSM Lithography Process for An Metal Layer)

  • 이미영;이흥주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.18-21
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    • 2002
  • As the mask design rules get smaller, the probability of the process failure becomes higher due to the narrow overlay margin between the contact and metal interconnect layers. To obtain the minimum process margin, a tabbing and cutting method is applied with the rule based optical proximity correction to the metal layer, so that the protection to bridge problems caused by the insufficient space margin between the metal layers can be accomplished. The side-lobe phenomenon from the attenuated phase shift mask with the tight design nile is analyzed through the aerial image simulation for test patterns with variation of the process parameters such as numerical aperture, transmission rate, and partial coherence. The corrected patterns are finally generated by the rules extracted from the side-lobe simulation.

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AttPSM metal layer 리토그라피공정의 side-lobe억제를 위한 Rule-based OPC (Rule-based OPC for Side-lobe Suppression in The AttPSM Metal Layer Lithography Process)

  • 이미영;이홍주;성영섭;김훈
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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    • pp.209-212
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    • 2002
  • As the mask design rules get smaller, the probability of the process failure becomes higher doc to the narrow overlay margin between the contact and metal interconnect layers. To obtain the minimum process margin, a tabbing and cutting method Is applied with the rule based optical\ulcorner proximity correction to the metal layer, so that the protection to bridge problems caused by the insufficient space margin between the metal layers can be accomplished. The side-lobe phenomenon from the attenuated phase shift mask with the tight design rule is analyzed through the aerial image simulation for test patterns with variation of the process parameters such as numerical aperture, transmission rate, and partial coherence. The corrected patterns are finally generated by the rules extracted from the side-lobe simulation.

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나노스텐실 제작을 위한 집속이온빔 밀링 특성 (Focused Ion Beam Milling for Nanostencil Lithography)

  • 김규만
    • 한국정밀공학회지
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    • 제28권2호
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    • pp.245-250
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    • 2011
  • A high-resolution shadow mask, a nanostencil, is widely used for high resolution lithography. This high-resolution shadowmask is often fabricated by a combination of MEMS processes and focused ion beam (FIB) milling. In this study, FIB milling on 500-nm-thin SiN membrane was tested and characterized. 500 nm thick and $2{\times}2$ mm large membranes were made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. A subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to the high resolution of the FIB milling process, nanoscale apertures down to 60 nm could be made into the membrane. The nanostencil could be used for nanoscale patterning by local deposition through the apertures.

Correction of late adolescent skeletal Class III using the Alt-RAMEC protocol and skeletal anchorage

  • Muhammed Hilmi Buyukcavus;Omer Faruk Sari;Yavuz Findik
    • 대한치과교정학회지
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    • 제53권1호
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    • pp.54-64
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    • 2023
  • This case report describes skeletal anchorage-supported maxillary protraction performed with the Alternate Rapid Maxillary Expansion and Constriction (AltRAMEC) protocol over a treatment duration of 14 months in a 16-year-old female patient who was in the late growth-development period. Miniplates were applied to the patient's aperture piriformis area to apply force from the protraction appliance. After 9 weeks of following the Alt-RAMEC protocol, miniplates were used to transfer a unilateral 500-g protraction force to a Petit-type face mask. A significant improvement was observed in the soft tissue profile in measurements made both cephalometrically and in three dimensional photographs. Subsequently, the second phase of fixed orthodontic treatment was started and the treatment was completed with the retention phase. Following treatment completion, occlusion, smile esthetics, and soft tissue profile improved significantly in response to orthopedic and orthodontic treatment.

빌드업 필름의 선폭 6㎛급 패턴 가공을 위한 직접식 UV 레이저 프로젝션 애블레이션 (Direct UV laser projection ablation to engrave 6㎛-wide patterns in a buildup film)

  • 손현기;박종식;정수정;신동식;최지연
    • 한국레이저가공학회지
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    • 제17권3호
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    • pp.19-23
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    • 2014
  • To directly engrave circuit-line patterns as wide as $6{\mu}m$ in a buildup film to be used as an IC substrate, we applied a projection ablation technique in which an 8 inch dielectric ($ZrO_2/SiO_2$) mask, a DPSS 355nm laser instead of an excimer laser, a ${\pi}$-shaper and a galvo scanner are used. With the ${\pi}$-shaper and a square aperture, the Gaussian beam from the laser is shaped into a square flap-top beam. The galvo scanner before the $f-{\theta}$ lens moves the flat-top beam ($115{\mu}m{\times}105{\mu}m$) across the 8 inch dielectric mask whose patterned area is $120mm{\times}120mm$. Based on the results of the previous research by the authors, the projection ratio was set at 3:1. Experiments showed that the average width and depth of the engraved patterns are $5.41{\mu}m$ and $7.30{\mu}m$, respectively.

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위성 SAR 영상의 지상차량 표적 데이터 셋 및 탐지와 객체분할로의 적용 (A Dataset of Ground Vehicle Targets from Satellite SAR Images and Its Application to Detection and Instance Segmentation)

  • 박지훈;최여름;채대영;임호;유지희
    • 한국군사과학기술학회지
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    • 제25권1호
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    • pp.30-44
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    • 2022
  • The advent of deep learning-based algorithms has facilitated researches on target detection from synthetic aperture radar(SAR) imagery. While most of them concentrate on detection tasks for ships with open SAR ship datasets and for aircraft from SAR scenes of airports, there is relatively scarce researches on the detection of SAR ground vehicle targets where several adverse factors such as high false alarm rates, low signal-to-clutter ratios, and multiple targets in close proximity are predicted to degrade the performances. In this paper, a dataset of ground vehicle targets acquired from TerraSAR-X(TSX) satellite SAR images is presented. Then, both detection and instance segmentation are simultaneously carried out on this dataset based on the deep learning-based Mask R-CNN. Finally, this paper shows the future research directions to further improve the performances of detecting the SAR ground vehicle targets.

Dielectric 마스크 적용 UV 레이저 프로젝션 가공을 이용한 빌드업 필름 내 선폭 10μm급 패턴 가공 연구 (DPSS UV laser projection ablation of 10μm-wide patterns in a buildup film using a dielectric mask)

  • 손현기;박종식;정수정;신동식;최지연
    • 한국레이저가공학회지
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    • 제16권3호
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    • pp.27-31
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    • 2013
  • To engrave high-density circuit-line patterns in IC substrates, we applied a projection ablation technique in which a dielectric ($ZrO_2/SiO_2$) mask, a DPSS UV laser instead of an excimer laser, a refractive beam shaping optics and a galvo scanner are used. The line/space dimension of line patterns of the dielectric mask is $10{\mu}m/10{\mu}m$. Using a ${\pi}$ -shaper and a square aperture, the Gaussian beam from the laser is shaped into a square flap-top beam; and a telecentric f-${\theta}$ lens focuses it to a $115{\mu}m{\times}105{\mu}m$ flat-top beam on the mask. The galvo scanner before the f-${\theta}$ lens moves the beam across the scan area of $40mm{\times}40mm$. An 1:1 projection lens was used. Experiments showed that the widths of the engraved patterns in a buildup film ranges from $8.1{\mu}m$ to $10.2{\mu}m$ and the depths from $8.8{\mu}m$ to $11.7{\mu}m$. Results indicates that it is required to increase the projection ratio to enhance profiles of the engraved patterns.

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Development and performance evaluation of large-area hybrid gamma imager (LAHGI)

  • Lee, Hyun Su;Kim, Jae Hyeon;Lee, Junyoung;Kim, Chan Hyeong
    • Nuclear Engineering and Technology
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    • 제53권8호
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    • pp.2640-2645
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    • 2021
  • We report the development of a gamma-ray imaging device, named Large-Area Hybrid Gamma Imager (LAHGI), featuring high imaging sensitivity and good imaging resolution over a broad energy range. A hybrid collimation method, which combines mechanical and electronic collimation, is employed for a stable imaging performance based on large-area scintillation detectors for high imaging sensitivity. The system comprises two monolithic position-sensitive NaI(Tl) scintillation detectors with a crystal area of 27 × 27 cm2 and a tungsten coded aperture mask with a modified uniformly redundant array (MURA) pattern. The performance of the system was evaluated under several source conditions. The system showed good imaging resolution (i.e., 6.0-8.9° FWHM) for the entire energy range of 59.5-1330 keV considered in the present study. It also showed very high imaging sensitivity, successfully imaging a 253 µCi 137Cs source located 15 m away in 1 min; this performance is notable considering that the dose rate at the front surface of the system, due to the existence of the 137Cs source, was only 0.003 µSv/h, which corresponds to ~3% of the background level.