• 대한수의학회지
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• 제11권1호
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• pp.49-53
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• 1971

The anthelmentic effects of Fuadin (sodium antimony-III-bis-pyrocatechin-disulphonate), Bithionol 2-2-thiobis 4,6-dichlorophenol)), hexachlorethane and carbon tetrachloride were studied on Eurytrema pancreaticum infected in sheep and goats. The evaluation on the effects was based upon the egg reduction in the feces of the experimental animals administered the drugs. The number of eggs per 5gm. of the feces was respectively calculated before the treatments, and the follw-up for the egg reductions was carried out over a period of three or four weeks(calculated twice a week). Oral administration of Bithionol (once a day for 2 succeed days, at the rate of 75 mg per kg of bady weight) and of hexachlorethane (once a day, at the rate of 300ml per kg of body weight) did not reveal any egg reduction in sheep host. Intramuscular injection of carbon tetrachloride with olive oil (once a day, at the rate of 0.05ml per kg of body weight) did not show the egg reduction in goats. Intramuscular injections of Fuadin for 5 days (the dosage schedule was 0.5ml at 1st day, 1.0ml at 2nd and 3rd day, 1.5ml at 4th and 5th day, to amount of 5.5ml) were completely devoid the fluke eggs in the feces of goats on 4 weeks after each treatment. Throughout the studies, Fuadin was only proved its anthelmintic effect to the goats infected with E. pancreaticum. On the other hand, Bithional, hexachlorethane and carbon tetrachloride did not reveal any effect as Fuadin showed.

• 공업화학
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• 제3권3호
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• pp.482-490
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• 1992

세종류의 금속산화물 전극을 양극으로 사용하여 methanol 용액중에서 furfuryl alcohol을 양극산화 시켜 2,5-dimethoxy-2,5-dihydrofurfuryl alcohol을 전해합성 하였다. 각 전극들은 티타늄 재질상에 산화주석($SnO_2$)과 삼산화이안티몬($Sb_2O_3$)의 반도체 혼합물층을 전기로 내에어 만들고, 그 위에 양극산화방법으로 ${\alpha}-PbO_2$, ${\beta}-PbO_2$, $MnO_2$등의 금속산화물을 전착(electrodeposition)하여 3종의 전극을 제작하였다. 이산화납 전극이 이산화망간 전극에 비하여 양극 내식성이 우수하였으며 생성물의 수율(92%)도 백금전극을 사용했던 결과와 대등하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.205-206
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• 2012

$InSbO_4$ (Indium antimony oxide) 박막을 RF 마그네트론 스퍼터링법을 이용하여 $SiO_2$가 코팅된 Si wafer ($SiO_2/Si$) 기판 또는 $400^{\circ}C$에서 융해된 석영 유리 (silica glass) 기판 위에 증착시켰다. 고결정성과 화학양론의 $InSbO_4$ 막을 증착시키기에 최적화된 조성의 $In_{0.2x}Sb_{0.3x}O_x$ 타겟을 이용하여 Ar과 $O_2$ 혼합 가스 분위기에서 스퍼터링 증착을 수행하였다. $InSbO_4$ 막은 가시광 영역에서 80%이상의 투과도를 보였고, $400^{\circ}C$에서 $1100^{\circ}C$사이의 어닐링 온도에서는 $InSbO_4$ 막의 전기적 성질이 높은 고온 내구성을 가지는 것을 알 수 있었다. 그러나 $1200^{\circ}C$ 이상의 어닐링 온도에서는 새로운 $Sb_2O_4$ 상의 분리로 인해 $InSbO_4$ 막의 비저항이 급격히 증가하였다.

• Bulletin of the Korean Chemical Society
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• 제15권6호
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• pp.465-468
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• 1994

The charge transfer compounds $(TTF)_4FeCl_3{\cdot}CH_3OH,\;(TTF)_4SbCl_4\;and\;(TTF)_5(SbBr_4)_2{\cdot}CH_3COCH_3$ were prepared from reactions of the TTF (tetrathiafulvalene) and metal halides. The compounds were characterized by spectroscopic (UV,IR, EPR and XPS) methods, magnetic susceptibility and electrical conductivity measurements. The d.c electrical conductivities of the pressed pellets are in the order of $10^{-1}-10^{-3} Scm^{-1}$, which lies in the range of semiconductor region at room temperature. It means that the partially ionized TTF has stacked in low-dimensional chain in each compound. Spectroscopic properties also indicate that TTF molecules are partially ionized and charge transfer has occurred from (TTF)n to Fe(III) center in $(TTF)_4FeCl_3{\cdot}CH_3OH$ whereas to the $-SbX_4^-$ entity in $(TTF)_4SbCl_4\;and\;(TTF)_5(SbBr_4)_2{\cdot}CH_3COCH_3$. The EPR g values are consistent with TTF radical formation and EPR linewidths suggest the delocalization of unpaired electrons along TTF stacks. A signal arised from metal (Fe and Sb) ions were not detected in EPR spectra, indicating that metal ion is in the diamagnetic state in each compound. The diamagnetic state was also examined by the magnetic susceptibility measurement. The magnetic properties reveal the significant interaction between the $TTF^+$ radical cations in the stacks. The oxidation state of metal ions was also investigated by XPS spectra.

• 반도체디스플레이기술학회지
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• 제8권3호
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• pp.13-17
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• 2009

we have studied characterization of microbolometer based on the co-sputtered silicon-antimony ($Si_{1-x}Sb_x$) thin film for infrared microbolometer. We have investigated the resistivity and the temperature coefficient of resistance (TCR) with annealing. We deposited the films using co-sputtering method at $200^{\circ}C$ in the Ar environment. The Sb concentration has been adjusted by applying variable DC power from Sb targets. TCR of deposited $Si_{1-x}Sb_x$ films have been measured the range of -2.3~-2.8%/K. The resistivity of the film is low but TCR is higher than the other bolometer materials. Resistivity of the films has not been affected hugely according to the low annealing temperature however the resistivity has been dramatically decreased over $250^{\circ}C$. It is caused of a phase change due to the rearrangement of Si and Sb atoms during crystallization process of the films.

• International Journal of Precision Engineering and Manufacturing-Green Technology
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• 제5권5호
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• pp.643-650
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• 2018

A self-powered electrochromic device was fabricated on an indium tin oxide-polyethylene naphthalate flexible substrate using a dye-sensitized solar cell (DSSC) as a self-harvesting source; the electrochromic device was naturally bleached and operated under outdoor light conditions. The color of the organic electrochromic polymer, poly(3,4-ethylenedioxythiophene) polystyrene sulfonate, was shifted from pale blue to deep blue with an antimony tin oxide film as a charge-balanced material. Electrochromic performance was enhanced by secondary doping using dimethyl sulfoxide. As a result, the device showed stable switching behavior with a high transmittance change difference of 40% at its specific wavelength of 630 nm for 6 hrs. To improve the efficiency of the solar cell, 1.0 wt.% of Ag NWs in the photoanode was applied to the $TiO_2$ photoanode. It resulted in an efficiency of 3.3%, leading to an operating voltage of 0.7 V under xenon lamp conditions. As a result, we built a standalone self-harvesting electrochromic system with the performance of transmittance switching of 29% at 630 nm, by connecting with two solar cells in a device. Thus, a self-harvesting and flexible device was fabricated to operate automatically under the irradiated/dark conditions.

• Nuclear Engineering and Technology
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• 제54권1호
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• pp.310-317
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• 2022

The mass attenuation coefficient is the primary physical parameter to model narrow beam gamma-ray attenuation. A new machine learning based approach is proposed to model gamma-ray shielding behavior of composites alternative to theoretical calculations. Two fuzzy logic algorithms and a neural network algorithm were trained and tested with different mixture ratios of vanadium slag/epoxy resin/antimony in the 0.05 MeV-2 MeV energy range. Two of the algorithms showed excellent agreement with testing data after optimizing adjustable parameters, with root mean squared error (RMSE) values down to 0.0001. Those results are remarkable because mass attenuation coefficients are often presented with four significant figures. Different training data sizes were tried to determine the least number of data points required to train sufficient models. Data set size more than 1000 is seen to be required to model in above 0.05 MeV energy. Below this energy, more data points with finer energy resolution might be required. Neuro-fuzzy models were three times faster to train than neural network models, while neural network models depicted low RMSE. Fuzzy logic algorithms are overlooked in complex function approximation, yet grid partitioned fuzzy algorithms showed excellent calculation efficiency and good convergence in predicting mass attenuation coefficient.

• 센서학회지
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• 제31권6호
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• pp.371-375
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• 2022

Antimony-doped tin oxide (ATO) thin films, one type of transparent conductive oxide (TCO) films, were prepared on a SiO₂-coated glass substrate with different substrate temperatures by a radio-frequency magnetron sputtering system. Structural, optical, and electrical characteristics of the deposited ATO films were analyzed using X-ray diffraction, scanning electron microscopy, alpha-step, ultraviolet-visible spectrometer, and Hall effect measurement. The substrate temperature during deposition did not affect the basic crystal structure of the films but changed the grain size and film thickness. The optical transmittance of the ATO films deposited at different substrate temperatures was over 70%. The lowest sheet resistance and resistivity were 8.43 × 10² Ω/sq, and 0.3991 × 10^-2 Ω·cm, respectively, and the highest carrier concentration and mobility were 2.36 × 10²¹ cm^-3 and 6.627 × 10^-2 cm²V^-1s^-1, respectively, at a substrate temperature of 400 ℃.

• 대한전자공학회논문지
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• 제23권6호
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• pp.758-765
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• 1986

The design, fabrication and performance of vertical double diffused power MOSFET (VDMOS) were described. On the antimony (Sb) doped (~7x10**17 cm**-3) silicon substrate (N+), epitaxial layer(N-) was grown. The thickness and the resistivity of this layer were 32\ulcorner and about 12\ulcorner-cm, respectively. The P- channel length which was controlled by sequential P-/N+ double diffuison method was about 1~2 \ulcorner, and was processed with the self alignment of 21 \ulcorner width poly silicon. To improve the breakdown voltage with constant on-resistance (Ron) about 1\ulcorner, three P+ guard rings were laid out around main pattern. With chip size of 4800\ulcorner x4840 \ulcorner, the VDMOS has shown breakdown voltage of 410~440V, on-resistance within 1.0~1.2\ulcornerand the current capablity of more than 5A.

• 한국분말재료학회지
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• 제31권3호
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• pp.236-242
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• 2024

The development of thermoelectric (TE) materials to replace Bi₂Te₃ alloys is emerging as a hot issue with the potential for wider practical applications. In particular, layered Zintl-phase materials, which can appropriately control carrier and phonon transport behaviors, are being considered as promising candidates. However, limited data have been reported on the thermoelectric properties of metal-Sb materials that can be transformed into layered materials through the insertion of cations. In this study, we synthesized FeSb and MnSb, which are used as base materials for advanced thermoelectric materials. They were confirmed as single-phase materials by analyzing X-ray diffraction patterns. Based on electrical conductivity, the Seebeck coefficient, and thermal conductivity of both materials characterized as a function of temperature, the zT values of MnSb and FeSb were calculated to be 0.00119 and 0.00026, respectively. These properties provide a fundamental data for developing layered Zintl-phase materials with alkali/alkaline earth metal insertions.