• 제목/요약/키워드: annealing-free process

검색결과 75건 처리시간 0.024초

Effect of water partial pressure on the texture and the morphology of MOD-YBCO films on buffered metal tapes

  • Chung, Kook-Chae;Yoo, Jai-Moo;Ko, Jae-Woong;Kim, Young-Kuk;Wang, X.L.;Dou, S.X.
    • 한국초전도ㆍ저온공학회논문지
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    • 제9권2호
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    • pp.23-26
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    • 2007
  • The influence of water partial pressure in Metal-organic Deposition (MOD) method was investigated on the texture and the morphology of $YBa_2Cu_3O_{7-x}$ (YBCO) films grown on the buffered metal tapes. The water partial pressure was varied from 4.2% up to 10.0% with the other process variables, such as annealing temperature and oxygen partial pressure, kept constant. In this work, the fluorine-free Y & Cu precursor solution added with Sm was synthesized and coated by the continuous slot-die coating & calcination step. The next annealing step of the YBCO films was done by the reel-to-reel method with the gas flowed vertically down. From the x-ray diffraction analysis, the un-reacted phase like $BaF_2$ peak was found at the water partial pressure of 4.2%, but $BaF_2$ peak intensity is much reduced as the water partial pressure is increased. However, the higher water partial pressure of about 10% in this experiment leads to the poor crystallinity of YBCO films. The morphologies of the YBCO films were not different from each other when the water partial pressure was varied in this work. The maximum critical current density of 3.8MA/$cm^2$ was obtained at the water partial pressure of 6.2% with the annealing temperature of 780$^{\circ}C$ and oxygen partial pressure of 500ppm.

Ion-cut에 의한 SOI웨이퍼 제조 및 특성조사 (SOI wafer formation by ion-cut process and its characterization)

  • 우형주;최한우;배영호;최우범
    • 한국진공학회지
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    • 제14권2호
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    • pp.91-96
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    • 2005
  • 양성자 주입과 웨이퍼접합기술을 접목한 ion-cut기술로서 SOI 웨이퍼를 제조하는 기술을 개발하였다. SRIM 전산모사에 의하면 일반 SOI 웨이퍼 (200nm SOI, 400nm BOX) 제조에는 65keV의 양성자주입이 요구된다. 웨이퍼분리를 위한 최적 공정조건을 얻기 위해 조사선량과 열처리조건(온도 및 시간)에 따른 blistering 및 flaking 등의 표면변화를 조사하였다. 실험결과 유효선량범위는 $6\~9times10^{16}H^+/cm^2$이며, 최적 아닐링조건은 $550^{\circ}C$에서 30분 정도로 나타났다. RCA 세정법으로서 친수성표면을 형성하여 웨이퍼 직접접합을 수행하였으며, IR 조사에 의해 무결함접합을 확인하였다 웨이퍼 분리는 예비실험에서 정해진 최적조건에서 이루어졌으며, SOI층의 안정화를 위해 고온열처리($1,100^{\circ}C,\;60$분)를 시행하였다. TEM 측정상 SOI 구조결함은 발견되지 않았으며, BOX(buried oxide)층 상부계면상의 포획전하밀도는 열산화막 계면의 낮은 밀도를 유지함을 확인하였다.

CaO 첨가에 의한 AZ31 합금 미세조직의 열적 안정성 변화 (Change in Microstructural Stability of AZ31 Alloy By the Addition of CaO)

  • 전중환
    • 열처리공학회지
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    • 제26권3호
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    • pp.113-119
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    • 2013
  • Grain growth behaviors of hot-rolled AZ31 (Mg-3%Al-1%Zn) and AZ31-0.3%CaO alloys at elevated temperatures have been investigated in order to clarify the effect of CaO addition on grain stability of Mg-Al-based wrought alloy. The grain size of CaO-free alloy increased steeply from 673 K with an increase in annealing temperature from 573 to 773 K, whereas the grains of CaO-containing alloy were relatively stable up to 723 K. The activation energies for grain growth ($E_g$) were 12.2 and 18.3 kJ/mole between 573 and 673 K and 119.2 and 126.9 kJ/mole between 673 and 773 K in the AZ31 and AZ31-0.3%CaO alloys, respectively. This result indicates that grains in the CaO-added alloy possess higher thermal stability than CaO-free alloy. SEM observations on the annealed alloy samples revealed that higher grain stability resulting from CaO addition would be associated with the suppression of grain growth by Ca-related precipitate particles distributed in the microstructure.

Flexible Active-Matrix Electrophoretic Display With Integrated Scan-And Data-Drivers

  • Miyazaki, Atsushi;Kawai, Hideyuki;Miyasaka, Mitsutoshi;Inoue, Satoshi;Shimoda, Tatsuya
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.153-156
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    • 2004
  • A newly developed flexible active-matrix (AM-) electrophoretic display (EPD) is reported. The AM-EPD features: (1) low-temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology, (2) fully integrated scan- and data-drivers, (3) flexibility and light-weight realized by transferring the whole circuits onto a plastic substrate using $SUFTLA^{TM}$ (Surface Free Technology by Laser Annealing/Ablation) process. A large storage capacitor is formed in each pixel so that driving electric field can be kept sufficiently strong during a writing period Two-phase driving scheme, a reset-phase which erases a previous image and a writing-phase for writing a new image, was chosen to cope with EPD's high driving voltage. The flexible AM-EPD has been successfully operated with a driving voltage of 8.5 V.

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TFD Device with Symmetrical Structure of Flexible Electrode Subject to Flexible Substrate

  • Lee, Chan-Jae;Hong, Sung-Jei;Kim, Won-Keun;Han, Jeong-In
    • Transactions on Electrical and Electronic Materials
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    • 제3권4호
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    • pp.32-35
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    • 2002
  • In this work, we test electrode material of TFD (Thin Film Diode) device subject to flexible substrate. Al, that is ductile metal, was proper for flexible electrode to fabricate flexible display. The fabricated devices had symmetric electrode structure on both sides of insulation layer. The electrode was made of ductile Al so as to reduce the mismatch of properties between the electrode and substrate. The TFD device was successfully fabricated applying our own etch-free process. Electrical properties were improved by post-annealing.

초고온 시스템용 SiCN 마이크로 구조물 제작 (Fabrication SiCN micro structures for extreme high temperature systems)

  • 판 투이 탁;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.216-216
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    • 2009
  • This paper describes a novel processing technique for the fabrication of polymer-derived SiCN (silicone carbonitride) microstructures for extreme microelectromechanical system (MEMS) applications. A polydimethylsiloxane (PDMS) mold was formed on an SU-8 pattern using a standard UV photolithographic process. Next, the liquid precursor, polysilazane, was injected into the PDMS mold to fabricate free-standing SiCN microstructures. Finally, the solid polymer SiCN microstructure was cross-linked using hot isostatic pressure at $400^{\circ}C$ and 205 bar. The optimal pyrolysis and annealing conditions to form a ceramic microstructure capable of withstanding temperatures over $1400^{\circ}C$ were determined. Using the optimal process conditions, the fabricated SiCN ceramic microstructure possessed excellent characteristics includingshear strength (15.2 N), insulation resistance ($2.163{\times}10^{14}\;{\Omega}$, and BDV (1.2 kV, minimum). Since the fabricated ceramic SiCN microstructure has improved electrical and physical characteristics compared to bulk Si wafers, it may be applied to harsh environments and high-power MEMS applications such as heat exchangers and combustion chambers.

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가수분해-축합반응 및 콜로이드 혼합법으로 유도된 LAS gel의 치밀화와 결정화 특성 (Densification and Crystallization Characteristics of LAS Gels Prepared by the Hydrolysis-Condensation Reaction and the Mixed Colloidal Processing Route)

  • 김광수;장현명;정창주
    • 한국세라믹학회지
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    • 제28권11호
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    • pp.865-872
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    • 1991
  • LAS (lithium aluminosilicate) sol was synthesized using the hydrolysis-condensation reaction of TEOS, chelated Al(OBus)3 and LiNO3 with H2O in alcohol (ethanol+2-propanol) medium. Lowering Li content by a factor of 1/2 significantly enhanced densification and retarded the crystallization of LAS gel by ~30$0^{\circ}C$. Dense LAS specimen with essentially pore-free microstructure was obtained by sintering the sol-gel derived gel at 80$0^{\circ}C$ for 4 h and annealing at 120$0^{\circ}C$ for 2 h. Similary, a mixed colloidal processing was attempted as a convenient, alternative route for the fabrication of dense LAS sintered body. The $\beta$-spodumene seeding (~0.8 ${\mu}{\textrm}{m}$) in the sol-gel derived LAS modified the sequence of phase transformations and lowered the temperature of crystallization by ~12$0^{\circ}C$. Combining the epitaxial seeding with the sol-gel process, we could lower the crystallization temperature to the sintering temperature range (~80$0^{\circ}C$) and, demonstrate a possibility of making the viscous sintering/crystallization as a continuous as a continuous unit process.

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열처리된 산화막 CMP 슬러리의 노화 현상 (Aging effect of annealed oxide CMP slurry)

  • 이우선;신재욱;최권우;고필주;서용진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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    • pp.335-338
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    • 2003
  • Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-layer dielectrics (ILD). Especially, defects such as micro-scratch lead to severe circuit failure which affect yield. CMP slurries can contain particles exceeding $1\;{\mu}m$ in size, which could cause micro-scratch on the wafer surface. In this paper, we have studied aging effect the of CMP sin as a function of particle size. We prepared and compared the self-developed silica slurry by adding of abrasives before and after annealing. As our preliminary experiment results, we could be obtained the relatively stable slurry characteristics comparable to original silica slurry in the slurry aging effect.

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화학적으로 변형된 전구용액을 이용한 YBCO 박막 제조 (Fabrication of YBCO films in MOD processing via chemically modified precursor solution)

  • 김영국;유재무;정국채;고재웅;김영준;한봉수
    • Progress in Superconductivity
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    • 제7권2호
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    • pp.158-161
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    • 2006
  • Superconducting YBCO films were successfully fabricated by MOD process using chemically modified precursor solution. In this study, a chemically modified precursor solution for MOD processing was synthesized using metal-organic salts and organic additives. It was shown that crack-free and uniform precursor films were formed after calcination in humidified Oxygen atmosphere. Less than 3 hours are required to finish the calcination process. XRD measurement shows that $BaF_2,\;CuO,\;Y_2O_3$ are major constituent of precursor films. Furthermore, YBCO films without any secondary phases were successfully fabricated after annealing in wet $Ar/O_2$ atmosphere. The YBCO film prepared on a $LaAlO_3$ single crystal substrate ($10mm{\times}10mm$) gives transport $I_c$ of 10A at 77K. This chemical modification approach is a possible candidate for improving MOD-processing of YBCO coated conductor.

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Solution Plasma Synthesis of BNC Nanocarbon for Oxygen Reduction Reaction

  • Lee, Seung-Hyo
    • 한국표면공학회지
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    • 제51권5호
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    • pp.332-336
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    • 2018
  • Alkaline oxygen electrocatalysis, targeting anion exchange membrane alkaline-based metal-air batteries has become a subject of intensive investigation because of its advantages compared to its acidic counterparts in reaction kinetics and materials stability. However, significant breakthroughs in the design and synthesis of efficient oxygen reduction catalysts from earth-abundant elements instead of precious metals in alkaline media still remain in high demand. One of the most inexpensive alternatives is carbonaceous materials, which have attracted extensive attention either as catalyst supports or as metal-free cathode catalysts for oxygen reduction. Also, carbon composite materials have been recognized as the most promising because of their reasonable balance between catalytic activity, durability, and cost. In particular, heteroatom (e.g., N, B, S or P) doping on carbon materials can tune the electronic and geometric properties of carbon, providing more active sites and enhancing the interaction between carbon structure and active sites. Here, we focused on boron and nitrogen doped nanocarbon composit (BNC nanocarbon) catalysts synthesized by a solution plasma process using the simple precursor of pyridine and boric acid without further annealing process. Additionally, guidance for rational design and synthesis of alkaline ORR catalysts with improved activity is also presented.