• 한국산학기술학회논문지
• /
• 제9권3호
• /
• pp.615-620
• /
• 2008

저저항 배선층으로 쓰일 수 있는 선폭 $0.5{\mu}m$, 70nm 높이의 폴리실리콘 패턴에 $10nm-Ni_{1-x}Co_x$(x=0.2, 0.6, and 0.7)의 금속 박막을 열증착법으로 성막하고 쾌속 열처리 (RTA) 온도를 $700^{\circ}C$와 $1000^{\circ}C$로 달리하여 실리사이드화 공정을 실시하여 상부에 니켈코발트 실리사이드를 형성시켰다 이때의 미세구조를 확인하고 FIB (focused ion beam)를 활용하여 저에너지 조건 (30kV-10 pA-2 sec)에서 배선층을 국부적으로 조사하여 실리사이드 층의 선택적 제거 가능성을 확인하였다. 실험 범위내의 실리사이드화 온도 범위와 NiCo 상대 조성 범위에서 주어진 FIB 조건으로 선택적으로 저저항 실리사이드 층의 제거가 가능하였으나, 상대적으로 Co 함유량이 많은 실리사이드는 배선층 내부에서 기포가 발생하였으며, 이러한 기포로 인해 실리사이드 층만의 국부적 제거는 불가능하였다.

• 한국재료학회지
• /
• 제31권3호
• /
• pp.156-161
• /
• 2021

Cr-Si based alloys are not only excellent in corrosion resistance at high temperatures, but also have good wear resistance due to the formation of Cr3Si phase, therefore they are promising as metallic coating materials. Aluminum is often added to Cr-Si alloys to improve the oxidation resistance through which stable alumina surface film is formed. On the other hand, due to the addition of aluminum, various Al-containing phases may be formed and may negatively affect the heat resistance of the Cr-Si-Al alloys, so detailed investigation is required. In this study, two Cr-Si-Al alloys (high-Si & high-Al) were prepared in the form of cast ingots through a vacuum arc melting process and the microstructural changes after high temperature heating process were investigated. In the case of the cast high-Si alloy, a considerable amount of Cr3Si phase was formed, and its hardness was significantly higher than that of the cast high-Al alloy. Also, Al-rich phases (with the high Al/Cr ratio) were not found much compared to the high-Al alloy. Meanwhile, it was observed that the amount of the Al-rich phases reduced by the annealing heat treatment for both alloys. In the case of the high temperature heating at 1,400 ℃, no significant microstructural change was observed in the high Si alloy, but a little more coarse and segregated AlCr phases were found in the high Al alloy compared to the cast state.

• 한국결정성장학회지
• /
• 제32권3호
• /
• pp.83-88
• /
• 2022

이종 기판과 GaN의 물성 차이로 인해 발생하는 결함을 제어하기 위한 다양한 방법 중 동종 물질을 완충층으로 사용하는 LT-GaN 방법을 사용하여 완충층과 성장 온도의 상관성을 자체 제작한 성장 장비를 통해 확인하고자 하였다. 성장 온도에 따라 표면에 형성된 LT-GaN 결정성에 변화가 있었으며, annealing 후 LT-GaN가 나타내는 결정성에 따라 epiGaN의 응력 완화 효과에 차이점이 있었다. 반면 LT-GaN의 높은 결정성은 다결정을 형성하는 원인으로 작용하여 그 위에 성장하는 epi-GaN의 결정질을 저해하는 결과를 유발하였다.

• 열처리공학회지
• /
• 제35권4호
• /
• pp.185-192
• /
• 2022

Variations in the microstructure and mechanical properties of API X70 steel processed by piping, electrical resistance welding (ERW), and post seam annealing (PSA) are investigated in this study. In the welding zone, some elongated pearlites are formed and grains coarsening occurs due to extra heat caused by the ERW and PSA processes. After the piping, the base metal shows continuous yielding behavior and a decrease in yield and impact strengths because mobile dislocation and back stress are introduced during the piping process. On the other hand, the ERW and PSA processes additionally decreased the impact strength of welding zone at room and low temperatures because some elongated pearlites easily act as crack initiation site and coarse ferrite grains facilitate crack propagation. As a result, the fracture surface of the welding zone specimen tested at low temperature revealed mostly cleavage fracture unlike the base metal specimen.

• 전기전자학회논문지
• /
• 제26권2호
• /
• pp.306-312
• /
• 2022

서로 다른 PN 비율과 금속화 어닐링 온도에 의해 장벽 높이가 다른 4H-SiC 병합 PiN Schottky(MPS) 다이오드의 전기적 특성과 심층 트랩을 조사했다. MPS 다이오드의 장벽 높이는 IV 및 CV 특성에서 얻었다. 전위장벽 높이가 낮아짐에 따라 누설 전류가 증가하여 10배의 전류가 발생하였다. 또한, 심층 트랩(Z_1/2 및 RD_1/2)은 4개의 MPS 다이오드에서 DLTS 측정을 통해 밝혀졌다. DLTS 결과를 기반으로, 트랩 에너지 준위는 낮은 장벽 높이와 함께 22~28%의 얕은 수준으로 확인되었다. 이는 쇼트키 장벽 높이에 대해 DLTS에 의해 결정된 결함 수준 및 농도의 의존성을 확인할 수 있다.

• 한국초전도ㆍ저온공학회논문지
• /
• 제24권3호
• /
• pp.41-46
• /
• 2022

The superconducting properties of high temperature superconducting (HTS) GdBCO coated conductor (CC) tape (Ag/GdBCO/Buffer-layers/Stainless Steel) were investigated, specifically a series of samples prepared by vacuum heat treatment (200℃ to 600℃), using a Quantum Design PPMS-14. The critical current density J_c value was obtained by applying the modified Bean model to the irreversible magnetization ∆M_irr(H) data which was estimated from the magnetization M(H) loop. The reduction rates of lnJ_c and T_c values according to the increase of the vacuum annealing temperature T_an were d(lnJ_c)/dT_an = - 0.016 A/(cm²∙℃) and dT_c/dT_an = - 0.24, respectively. We examined the effect of recovery temperature T_re (475℃ to 700℃) and recovery duration time t (0.5 h to 24 h) on the restoration of previously completely lost superconductivity in samples that subsequently received heat treatment in an O₂ gas flow space. All samples were fully restored to superconductivity by heat treatment in an O₂ gas flow space. The recovery temperatures T_re (475℃ to 700℃) and recovery duration times t (0.5 h to 24 h) were both independent of the superconductivity recovery characteristics.

• 한국표면공학회지
• /
• 제34권5호
• /
• pp.503-509
• /
• 2001

Thin films of hydrogenated amorphous silicon (a-Si : H) and hydrogenated amorphous silicon carbide (a-SiC:H) of different compositions were deposited on Si(100) wafer and glass by RF plasma-enhanced chemical vapor deposition (RF-PECVD). In the present work, we have investigated the effects of the RF power on the properties, such as optical band gap, transmittance and crystallinity. The Raman data show that the a-Si:H material consists of an amorphous and crystalline phase for the co-presence of two peaks centered at 480 and $520 cm^{-1}$ . The UV-VIS data suggested that the optical energy band gap ($E_{g}$ ) is not changed effectively with RF power and the obtained $E_{g}$(1.80eV) of the $\mu$c-Si:H thin film has almost the same value of a-Si:H thin film (1.75eV), indicating that the crystallity of hydrogenated amorphous silicon thin film can mainly not affected to their optical properties. However, the experimental results have shown that$ E_{g}$ of the a-SiC:H thin films changed little on the annealing temperature while $E_{g}$ increased with the RF power. The Raman spectrum of the a-SiC:H thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs.

• Corrosion Science and Technology
• /
• 제22권5호
• /
• pp.359-367
• /
• 2023

The localized corrosion resistance of the Ni-based Inconel 718 alloy after solution heat treatment was evaluated using electrochemical techniques in a solution of 25 wt% NaCl and 0.5 wt% acetic acid. Solution heat treatment at 1050 ℃ for 2.5 hours resulted in an increased average grain diameter. Both Ti carbides (10 ㎛ diameter) and Nb-Mo carbides (1 - 9 ㎛ diameter) were distributed throughout the material. Despite heat treatment, the shape and composition of these carbides remained consistent. An increase in solution temperature led to a decrease in pitting potential value. However, the pitting potential value of solution heat-treated Inconel 718 was consistently higher than that of as-received Inconel 718 at all tested temperatures. Localized corrosion initiation occurred at 0.4 V_SSE in a temperature environment of 80 ℃ for both as-received and solution heat-treated Inconel 718 alloys. X-ray photoelectron spectroscopic analysis indicated that the composition of the passive film formed on specimen surfaces remained largely unchanged after solution heat treatment, with O1s, Cr2p_3/2, Fe2p_3/2, and Ni2p_3/2 present. The difference in localized corrosion resistance between as-received and solution heat-treated Inconel 718 alloys was attributable to microstructural changes induced by the heat treatment process.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.239-240
• /
• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.154-155
• /
• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.