• 한국진공학회지
• /
• 제19권2호
• /
• pp.155-160
• /
• 2010

상변화 메모리 소자 제작 공정의 단위 스텝인 최종 열처리의 온도가 상변화 메모리 소자 특성에 미치는 영향을 고찰하였다. $Ge_2Sb_2Te_5$ (GST) 박막을 활성 물질로 하는 기공(pore) 구조의 단위 상변화 메모리 소자를 제작하고, $160^{\circ}C$에서 $300^{\circ}C$까지의 온도 범위에서 최종 열처리를 실시하였다. 상변화 메모리 소자의 SET 저항에서 RESET 저항으로의 셀 저항 변화 양상은 최종 열처리 온도에 따라 큰 차이를 나타내었다. 정상적인 상변화 메모리 동작 특성을 얻을 수 있는 임계 열처리 온도가 존재하며, 열처리 온도가 그 온도에 비해 상대적으로 높거나 낮은 경우에는 소자가 오동작하거나 불안정하게 동작하는 것을 확인하였다. 이러한 열처리 온도의 효과는 열에너지에 따른 상부전극-GST 박막-발열층 다층 구조의 열적 안정성과 밀접한 관련이 있는 것으로 보인다.

• Transactions on Electrical and Electronic Materials
• /
• 제3권1호
• /
• pp.14-17
• /
• 2002

The effects of substrate temperatures and annealing temperatures on the microstructures and ferroelectric properties of PbZ $r_{0.52}$ $Ti_{0.48}$ $O_3$(PZT) thin fims prepared by pulsed laser deposition (PLD) were investigated. For this purpose, the PZT films were deposited at various substrate temperatures (400~$600^{\circ}C$) with post annealing process in oxygen atmosphere. The single perovskite phase was formed at the deposition temperature of 500 to 55$0^{\circ}C$ without post annealing and the PZT films deposited below 50$0^{\circ}C$ formed the single phase with post annealing at $650^{\circ}C$. The grain size of the films increased and the grain boundary of the films was clearly defined as the substrate temperature increased from 400 to 55$0^{\circ}C$. The remnant polarization (Pr) and the coercive field (Ec) of the films deposited at 55$0^{\circ}C$ and annealed at $650^{\circ}C$ were 34.3 $\mu$C/c $m^2$and 60.2 kV/cm, respectively.y.y.

• 공업화학
• /
• 제10권1호
• /
• pp.35-40
• /
• 1999

Hard segment 함량이 35%와 53%로 서로 다른 두 개의 열가소성 폴리우레탄 시료 (각각 TPU-35와 TPU-35)와 이들을 70/30, 50/50, 30/70 wt%로 용융 블렌딩한 조성들이 annealing 온도와 시간에 따라 변화할 수 있는 유리전이온도와 용융피이크, 분자량 및 분자량 분포도의 변화를 관찰하였다. TPU의 $T_g$는 hard segment 함량이 많을수록 높은 값을 보였으며 annealing 온도와 시간에 따라 hard microdomain 구조의 미약한 관계에 의한 용융피이크의 크기와 온도 등이 변하였다. 이는 annealing에 의한 열이 long-range 혹은 short-range segmental motion의 거동, 비결정 microphase 구조의 order-disorder 전이, domain의 크기 및 결정구조의 질서도 등 여러 가지 복합적인 영향을 끼친 결과로 사료된다. 미세 결정의 용융 결과로 나타나는 $T_3$단일 피이크만이 존재하는 annealing 온도는 TPU-35, TPU-44와 TPU-53에 대해 각각 130, 170 및 $180^{\circ}C$이었다. Annealing 온도와 시간에 따른 분자량 및 분자량 분포도 변화 측정에서 TPU-35는 $135^{\circ}C$에서, TPU-44(TPU-35/TPU-53=50/50 블랜드)는 $170^{\circ}C$, 그리고 TPU-53은 $180^{\circ}C$에서 수평균 및 중량평균 분자량의 증가와 더불어 polydispersity(PI)는 감소를 보였다. 이 변화는 같은 조건의 annealing 온도에 따른 용융피이크 변화에서 $T_3$단일 피이크만 남게 되는 annealing온도와 일관성을 보이고 있는데, 이는 이들 시료가 특정한 annealing 온도에서 chain dissociation과 recombination이 동시에 일어나므로써 빚어진 결과로 추측된다.

• 한국전기전자재료학회논문지
• /
• 제16권10호
• /
• pp.859-864
• /
• 2003

We prepared SOI(silicon-on-insulator) wafer pairs of Si II SiO$_2$/Si$_3$N$_4$ II Si using wafer direct bonding with an electric furnace annealing(EFA), a fast linear annealing(FLA), and a rapid thermal annealing(RTA), respectively, by varying the annealing temperatures at a given annealing process. We measured the bonding area and the bonding strength with processes. EFA and FLA showed almost identical bonding area and theoretical bonding strength at the elevated temperature. RTA was not bonded at all due to warpage, We report that FLA process was superior to other annealing processes in aspects of surface temperature, annealing time, and bonding strength.

• 대한금속재료학회지
• /
• 제48권1호
• /
• pp.77-84
• /
• 2010

Annealing characteristics of an oxygen free copper (OFC) processed by differential speed rolling (DSR) were investigated in detail. An OFC sample with a thickness of hum was rolled to 35% reduction at ambient temperature without lubrication, varying the differential speed ratio from 1.0:1 to 2.2:1, and then annealed for 0.5h at various temperatures from 100 to $400^{\circ}C$. Different recrystallization behavior was observed depending on the differential speed ratio, especially in the case of annealing at $200^{\circ}C$ Complete recrystallization occurred in the specimens annealed at temperatures above $250^{\circ}C$ regardless of the differential ratios. The hardness distribution in the thickness direction of the rolled OFC sheets varied depending on the differential speed ratios. These annealing characteristics were explained by the magnitude of shear strain introduced during rolling.

• 한국재료학회지
• /
• 제21권12호
• /
• pp.655-659
• /
• 2011

An ultrafine grained complex aluminum alloy was fabricated by an accumulative roll-bonding (ARB) process using dissimilar aluminum alloys of AA1050 and AA5052 and subsequently annealed. A two-layer stack ARB process was performed up to six cycles without lubricant at an ambient temperature. In the ARB process, the dissimilar aluminum alloys, AA1050 and AA5052, with the same dimensions were stacked on each other after surface treatment, rolled to the thickness reduction of 50%, and then cut in half length by a shearing machine. The same procedure was repeated up to six cycles. A sound complex aluminum alloy sheet was fabricated by the ARB process, and then subsequently annealed for 0.5h at various temperatures ranging from 100 to $350^{\circ}C$. The tensile strength decreased largely with an increasing annealing temperature, especially at temperatures of 150 to $250^{\circ}C$. However, above $250^{\circ}C$ it hardly decreased even when the annealing temperature was increased. On the other hand, the total elongation increased greatly above $250^{\circ}C$. The hardness exhibited inhomogeneous distribution in the thickness direction of the specimens annealed at relatively low temperatures, however it had a homogeneous distribution in specimens annealed at high temperatures.

• 열처리공학회지
• /
• 제7권1호
• /
• pp.53-60
• /
• 1994

Austenite formation and Low temperatures mechanical properties of HSLA steel of different starting structures have been studied by intercritical annealing(IA). The different starting structures are: ferrite+pearlite(FP1), martensite(M1), cold worked ferrite+pearlite(FP2) and cold worked martensite(M2). In most cases tensile strength and elongation was increased by decreasing the testing temperatures regardless of the IA time. Tensile strength of the cold worked starting structures was higher than that of the non-cold worked starting structures. However not any noticeable difference in elongation was found between two cases. Low temperatures impact properties were affected by the starting structures. Charpy V-notch impact transition temperatures of the M-starting structures were around $-40^{\circ}C$, and those of the FP starting structures were around $-10^{\circ}C$. Impact energy was lower in the cold worked specimens than in the non-cold worked specimens at the same starting structures. DP structure obtained from the M-starting structure has shown superior low temperatures mechanical properties than the DP structure obtained from the FP-starting structure.

• Transactions on Electrical and Electronic Materials
• /
• 제1권1호
• /
• pp.26-31
• /
• 2000

The ~1540 nm $^4$ $I_{13}$ 2/ longrightarro $w^4$ $I_{15}$ 2/ emissions of E $r^{3+}$ in Er-implanted GaN annealed at temperatures in the 400 to 100$0^{\circ}C$ range were investigated to gain a better understanding of the formation and dissociation processes of the various E $r^{3+}$ sites and the recovery of damage caused by the implantation with increasing annealing temperature ( $T_{A}$).The monotonic increase in the intensity of the broad defect photoluminescence(PL) bands with incresing $T_{A}$ proves that these are stable radiative recombination centers introduced by the implantation and annealing process. Theser centers cannot be attributed to implantation-induced damage that is removed by post-implantation annealing. Selective wavelength pumpling of PL spectra at 6K reveals the existence of at least nine different E $r^{3+}$ sites in this Er-implanted semiconductor. Most pf these E $r^{3+}$ PL centers are attributed to complexed of Er atoms with defects and impurities which are thermally activated at different $T_{A}$. Only one of the nine observed E $r^{3+}$ PL centers can be pumped by direct 4f absorption and this indicates that it is highest concentration E $r^{3+}$ center and it represents most of the optically active E $r^{3+}$ in the implanted sample. The fact that this E $r^{3+}$ center cannot be strongly pumped by above-gap light or broad band below-gap absorption indicates that it is an isolated center, i.e not complexed with defects or impurities, The 4f-pumped P: spectrum appears at annealing temperatures as low as 40$0^{\circ}C$, and although its intensity increase monotonically with increasing $T_{A}$ the wavelengths and linewidths of its characteristic peaks asre unaltered. The observation of this high quality E $r_{3+}$PL spectrum at low annealing temperatures illustrates that the crystalline structure of GaN is not rendered amorphous by the ion implantation. The increase of the PL intensities of the various E $R_{3+}$sites with increasing $T_{A}$is due to the removal of competing nonradiative channels with annealing. with annealing.annealing.

• 한국전기전자재료학회논문지
• /
• 제20권9호
• /
• pp.776-779
• /
• 2007

In this study we present the effect of annealing temperatures on the structural, electrical and optical characteristics of Ga-doped ZnO (GZO) films. GZO target is deposited on coming 7059 glass substrates by DC sputtering. and then GZO films are annealed at temperatures of 400, 500, $600^{\circ}C$ in air ambient for 20 min. in this case of as-grown film, it shows the resistivity of $6{\times}10^{-1}{\Omega}{\cdot}cm$ and transmittance under 85%, whereas the electrical and optical properties of film annealed at $500^{\circ}C$ are enhanced up to $1.9{\times}10^{-3}{\Omega}{\cdot}cm$ and 90%, respectively.

• 한국안전학회지
• /
• 제2권3호
• /
• pp.5-11
• /
• 1987

In this study, a mild steel (SS41) of the carbon steel, a spring steel (SUP-9), and stainless steel (SUS 304) of the special gceel, etc, are adopted as the experimental materrials and are weded by $CO_2$(SS41, SUP-9), TIG (SUS304), respectively. And the residual stress distribution and fracture behavior at the welded zone are examined according to annealing temperatures of four section involving as welded. As a consequence, the best annealing temperatures that the residual stress is removed enough and mechanical properties are very suitable are at 90$0^{\circ}C$ (SS41), 75$0^{\circ}C$ (SUP-9), 110$0^{\circ}C$ (SUS 304), respectively.