• Journal of Electrochemical Science and Technology
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• 제12권2호
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• pp.212-216
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• 2021

We investigated the feasibility of hydrogen storage with electrochemically formed VO₂ nanotubes. The VO₂ nanotubes were fabricated through the anodization of vanadium metal in fluoride ion-containing organic electrolyte followed by an annealing process in an Ar-saturated atmosphere at 673 K for 3 h at a heating rate of 3 K /min. During anodization, the current density significantly increased up to 7.93 mA/cm² for approximately 500 s owing to heat generation, which led to a fast-electrochemical etching reaction of the outermost part of the nanotubes. By controlling the anodization temperature, highly ordered VO₂ nanotubes were grown on the metal substrate without using any binders or adhesives. Furthermore, we demonstrated the hydrogen sorption properties of the anodic VO₂ nanotubes.

• 한국진공학회지
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• 제12권3호
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• pp.168-173
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• 2003

유리 기판 위에 증착된 비정질 실리콘 박막의 고상 결정화에 대한 새로운 방법을 제시하였다. 비정질 실리콘 박막의 하부에 패턴 된 다양한 크기의 $TiSi_2$ 박막을 전기저항 가열 방식으로 가열함으로서 비정질 실리콘이 고상 결정화 되도록 하였다. 박막히터를 이용한 열처리는 매우 빠른 열처리 공정으로써, 일반적인 로에 의한 열처리에 비해 매우 낮은 thermal budget을 가지므로, 유리기판 위에서도 고온 열처리가 가능하다는 장점을 가진다. 본 연구에서는 500 $\AA$의 비정질 실리콘 박막을 약 $850^{\circ}C$ 이상의 높은 온도에서 수 초 내에 결정화 할 수 있음을 보였으며, 열처리 조건의 변화에 따른 영향과 지역선택성의 장점을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.181.2-181.2
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• 2014

A single-layer graphene has been uniformly grown on a Cu surface at elevated temperatures by thermally processing a poly (methyl methacrylate) (PMMA) film in a rapid thermal annealing (RTA) system under vacuum. The detailed chemistry of the transition from solid-state carbon to graphene on the catalytic Cu surface was investigated by performing in-situ residual gas analysis while PMMA/Cu-foil samples being heated, in conjunction with interrupted growth studies to reconstruct ex-situ the heating process. We found that the gas species of mass/charge (m/e) ratio of 15 ($CH_3{^+}$) was mainly originated from the thermal decomposition of PMMA, indicating that the formation of graphene occurs with hydrocarbon molecules vaporized from PMMA, such as methane and/or methyl radicals, as precursors rather than by the direct graphitization of solid-state carbon. We also found that the temperature for dominantly vaporizing hydrocarbon molecules from PMMA and the length of time, the gaseous hydrocarbon atmosphere is maintained, are dependent on both the heating temperature profile and the amount of a solid carbon feedstock. From those results, we strongly suggest that the heating rate and the amount of solid carbon are the dominant factors to determine the crystalline quality of the resulting graphene film. Under optimal growth conditions, the PMMA-derived graphene was found to have a carrier (hole) mobility as high as ${\sim}2,700cm^2V^{-1}s^{-1}$ at room temperature, which is superior to common graphene converted from solid carbon.

• 한국안광학회지
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• 제6권1호
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• pp.133-137
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• 2001

유리안경렌즈의 국산화를 위하여 안경렌즈용 유리의 제작을 국내에서 처음으로 시도하였다. 유리의 안정성을 확보하기 위하여 DSC 실험을 하여 annealing 조건인 Tg를 구하고, 제작비 절감효과를 거둘 수 있기 위하여 완성품에 가까운 메니스커스 형상으로 유리를 성형하는 방법에 관하여 연구하였다. KzFSl 유리의 DSC 실험을 행한 결과 승온률이$2^{\circ}C/min$에서 $20^{\circ}C/min$으로 높아짐에 따라 $483^{\circ}C$에서 $501^{\circ}C$까지 점점 높아짐을 알 수 있었으며 이러한 비례는 Arrhenius 온도의존성을 보여주는 것으로 조사되었고, 그 활성화 에너지는 ${\Delta}E$=409 kJ/mole(4.25eV) 로 나타났고, KzFSl 유리의 Tg는 $480^{\circ}C$ 부근임을 알 수 있었다. KzFSl의 원료분말을 녹이기 위하여 온도를 $950^{\circ}C$ 까지 올린 후 2시간 동안 유지한 다음 온도가 $520^{\circ}C$인 다른 전기로 내부의 주형틀에 KzFSl 용액을 쏟아 붓고 다른 주형들로 눌러 안경렌즈모양으로 조형한 후 Tg가 속해있는 온도구간인 $520{\sim}430^{\circ}C$ 사이를 $0.25^{\circ}C/min$의 냉각속도로 서서히 냉각하여 유리의 스트레인을 제거한 후 실온까지 서서히 냉각한 후 만들어진 KzFSl 유리의 모양을 A사와 B사에서 제품화되어 나오는 유리안경렌즈와 비교하여본 결과, 주형틀에 의하여 만들어진 유리는 메니스커스 형상을 하고 있으며 그 크기도 거의 상용화된 안경렌즈와 유사하며 annealing 할 때 Tg 부근을 $0.25^{\circ}C/min$의 냉각 속도로 0.1도씩 조절하며 냉각하여 영구스트레인이 제거된 단단한 유리가 만들어진 것으로 나타났다.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2009년도 춘계학술대회 논문집
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• pp.355-356
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• 2009

The change of thermal expansion and mechanical behaviors by cold working has been investigated in Fe-29%Ni-17%Co low thermal expansion Kovar alloy. Fe-29%Ni-17%Co alloy was cold rolled gradually and prepared to plates having reduction ratio of 0%, 20%, 40%, 60%, and 80%. Annealing effect on the properties was also studied. Thermal expansion was measured from $25^{\circ}C$ to $600^{\circ}C$ with a heating rate of $5^{\circ}C$/min by using vacuum differential dilatometer. It was found that thermal expansion coefficient ($\alpha_{30{\sim}400}$) slightly decreased (reduction ration of 20%) and then remarkably increased (above reduction ration of 40%) with increasing reduction ratio of cold rolling. Thermal expansion coefficient ($\alpha_{30{\sim}400}$) was sharply decreased after annealing heat-treatment. Yield and tensile strengths were continuously increased and elongation was decreased by cold roiling. Microstructural observation and X-ray diffraction analysis results showed that the $\alpha$ phase significantly increased as the reduction ratio increased. The slight decrease of thermal expansion coefficient bellow reduction ration of 20% could be explained by the destroying short-range ordering and the decreasing of grain size. The significant increase of thermal expansion coefficient with cold rolling mainly attributed to the appearance of $\alpha$ phase. The correlation between the microstructural cause and invar phenomena for the low thermal expansion behavior was also discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.456-456
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• 2009

Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a ${\mu}c$-Si:H intrinsic layer was deposited on the p-a-Si:H layer additionally by PECVD. To improve heat transfer rate to the amorphous silicon layer, and as heating both sides and protecting boron eliminating from the amorphous silicon layer. For p-a-Si:H layer with the ratio of $SiH_4$ : $B_2H_6$ : $H_2$ = 30 : 30 : 120, at $200^{\circ}C$, 50 W, 0.2 Torr for 30 minutes, and for ${\mu}c$-Si:H intrinsic layer, $SiH_4$ : $H_2$ = 10 : 300, at $200^{\circ}C$, 30 W, 0.5 Torr for 60 minutes, 2 cm $\times$ 2 cm size wafers were used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 20 ~ 27 % of power, 150 ~ 160 kHz, 20 ~ 50 mm/s of marking speed, and $10\;{\sim}\;50 {\mu}m$ spacing with continuous wave mode of scanner lens showed the correlation between lifetime and sheet resistance as $100\;{\Omega}/sq$ and $11.8\;{\mu}s$ vs. $17\;{\Omega}/sq$ and $8.2\;{\mu}s$. Comparing to the singly deposited p-a-Si:H layer case, the additional ${\mu}c$-Si:H layer for doping resulted in no trade-offs, but showed slight improvement of both lifetime and sheet resistance, however sheet resistance might be confined by the additional intrinsic layer. This might come from the ineffective crystallization of amorphous silicon layer. For the additional layer case, lifetime and sheet resistance were measured as $84.8\;{\Omega}/sq$ and $11.09\;{\mu}s$ vs. $79.8\;{\Omega}/sq$ and $11.93\;{\mu}s$. The co-existence of $n^+$layeronthesamesurfaceandeliminating the laser damage should be taken into account for an IBC solar cell structure. Heavily doped uniform boron layer by fiber laser brings not only basic and essential conditions for the beginning step of IBC solar cell fabrication processes, but also the controllable doping concentration and depth that can be established according to the deposition conditions of layers.

• 열처리공학회지
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• 제29권2호
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• pp.51-55
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• 2016

The P/M processing of titanium aluminide using amorphous TiAl is developed by which it is possible to overcome inherent fabricability problems and to obtain a fine microstructure. A high quality amorphous TiAl powder produced by reaction ball milling shows clear glass transition far below a temperature at the onset of crystallization in differential scanning calorimetry above a heating rate of 0.05 K/s. We obtained a fully dense compact of amorphous TiAl powders, encapsulated in a vacuumed can, via viscous flow by hot isostatic pressing (HIP). Isothermally annealing of HIP'ed amorphous compact under a pressure of 196 MPa shows a progressive growth of ${\gamma}-TiAl$ phase with ${\alpha}2$ ($Ti_3Al$), which is characterized by increasing sharpness of X-ray peaks with temperature. Fully dense HIP'ed compact of titanium aluminide TiAl shows a high hardness of 505 Hv, suggesting strengthening mechanisms by sub-micron sized grain of ${\gamma}-TiAl$ and particle-dispersion by second phase constituent, ${\alpha}2$.

• 한국전기전자재료학회논문지
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• 제21권5호
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• pp.458-462
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• 2008

In this paper, we investigated the (002) preferred orientation and morphology characteristics of AlN thin film by using reactive rf sputtering. Additionally, AlN thin films grown in the range from 150 to 300 W were studied under room temperature without substrate heating and post annealing. Sputtered AlN thin films were well grown on Si substrates and the (002) main peak in XRD patterns showed the highest intensity at 300 W with $0.25^{\circ}$ degree of full width at half-maximum (FWHM). As increased RF power, the surface roughness was increased from 1.0 to 3.4 nm. In Fourier transformation infrared spectroscopy (FTIR), $A_1$ (TO) and $E_1$ (TO) mode closed to AlN thin film confirmed the changes with increasing the intensity rate. From these results, we could confirm a chance of the growth of AlN thin film by only low temperature.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권9호
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• pp.449-454
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• 2002

A rectangular straight microchannel, integrated with the resistance temperature detectors(RTDs) for temperature sensing and a micro-heater for generating the Temperature gradient along the channel, was fabricated. Its dimension is 57${\mu}{\textrm}{m}$(H)$\times$200${\mu}{\textrm}{m}$(W)$\times$48,050${\mu}{\textrm}{m}$(L), and RTDs were placed at the inner-channel wall. Si wafer was used as a substrate. For the fabrication of RTDs, 5300$\AA$ thick Pt/Ti layer was sputtered on a Pyrex glass wafer. Finally, the glass wafer was bonded with Si wafer by anodic bonding, so that the RTDs are located inside the microchannel. Temperature coefficient of resistance(TCR) values of the fabricated Pt-RTDs were 2800~2950ppm$^{\circ}C$ and the variation of TCR value In the range of O~10$0^{\circ}C$ was less than 0.3％. Therefore, it was proved that the fabricated Pt-RTDs without annealing were excellent as temperature sensors. The temperature distribution in the microchannel was investigated as a function of mass flow rate and heating power. The temperature increase rate diminished with decreasing the applied power and increasing the mass flow rate. It was confirmed from the comparison with the simulation results that the temperature measured inside the microchannel is more accurate than measuring the temperature measured at the outer wall. The proposed temperature sensing method and microchannel are expected to be useful in microfluidics researches.

• 대한전자공학회논문지SD
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• 제38권5호
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• pp.329-337
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• 2001

고유전 (Ba, Sr)TiO/sub 3/ (BST) 박막을 이용한 DRAM storage capacitor의 저전계 영역에서의 전하손실을 발생시키는 커패시터의 누설전류는 유전완화전류와 진성 누설전류로 이루진다고 알려져 있다. 특히, 기가급 DRAM의 동작 전압(~IV)에서 유전완화전류가 진성 누설전류에 비해 훨씬 크기 때문에 이에 대한 심도 있는 연구가 필요하다. 본 연구에서는 thermally stimulated current (TSC) 측정법을 BST 박막에 처음으로 적용하여 트랩의 에너지 level 및 공정변화에 따른 트랩 밀도의 상대적 평가를 하였다. 그리고, 기존에 사용되던 전류-전압(I-V) 측정이나 전류-시간(I-t) 측정과 비교 및 분석함으로써 유전완화 전류의 원인을 규명하고 TSC 측정법의 신뢰성을 살펴보았다. 먼저 안정적인 TSC 측정을 위해 전계, 시간, 온도 및 승온속도에 따른 polarization condition을 알아보았다 이 조건을 이용한 TSC 측정으로부터 BST 박막에서의 트랩의 energy level이 0.20(±0.01) eV와 0.45(±0.02) eV임을 알 수 있었다. Rapid thermal annealing (RTA)을 이용한 후속 열처리에 따른 TSC 측정을 통하여 이 트랩들이 산소결핍(oxygen vacancy)에 기인함을 확인할 수 있었다. MIM BST 커패시터의 열처리에 대한 TSC 특성은 전류-전압(I-V) 및 전류-시간(I-t) 특성과 같은 경향성을 보인다. 이것은 TSC 측정이 BST 박막내의 트랩을 평가하는데 있어서 매우 효과적인 방법이라는 것을 보여준다.