Browse > Article
http://dx.doi.org/10.4313/JKEM.2008.21.5.458

The Preferred Orientation and Morphology Characteristics of AlN Thin Films Prepared by RF Power Under Room Temperature Process  

Oh, Su-Young (성균관대학교 정보통신공학부)
Kim, Eung-Kwon (성균관대학교 정보통신공학부)
Lee, Tae-Yong (성균관대학교 정보통신공학부)
Kang, Hyun-Il (성균관대학교 정보통신공학부)
Yu, Hyun-Kyu (성균관대학교 정보통신공학부)
Song, Joon-Tae (성균관대학교 정보통신공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.5, 2008 , pp. 458-462 More about this Journal
Abstract
In this paper, we investigated the (002) preferred orientation and morphology characteristics of AlN thin film by using reactive rf sputtering. Additionally, AlN thin films grown in the range from 150 to 300 W were studied under room temperature without substrate heating and post annealing. Sputtered AlN thin films were well grown on Si substrates and the (002) main peak in XRD patterns showed the highest intensity at 300 W with $0.25^{\circ}$ degree of full width at half-maximum (FWHM). As increased RF power, the surface roughness was increased from 1.0 to 3.4 nm. In Fourier transformation infrared spectroscopy (FTIR), $A_1$ (TO) and $E_1$ (TO) mode closed to AlN thin film confirmed the changes with increasing the intensity rate. From these results, we could confirm a chance of the growth of AlN thin film by only low temperature.
Keywords
AlN; Room temperature; Sputtering;
Citations & Related Records
연도 인용수 순위
  • Reference
1 H. Cheng and P. Hing, 'The evolution of preferred orientation and morphology of AlN films under various RF sputtering powers', Surface and Coatings Technology, Vol. 167, p. 297, 2003   DOI   ScienceOn
2 K.-H. Chiu, J.-H. Chen, H.-R. Chen, and R.-S. Huang, 'Deposition and characterization of reactive magnetron sputtered aluminum nitride thin films for film bulk acoustic wave resonator', Thin Solid Films, Vol. 515, p. 4819, 2007   DOI   ScienceOn
3 S. U. Hong, G. P. Han, M. C. Paek, K. I. Cho, and S.-G. Yoon, 'Effects of Al/N ratio on microstructure of AlN films grown by PAMBE', The Korean Institute of Electrical and Electronic Material Engineers, Vol. 14, No. 12, p. 972, 2001
4 L. Mang, F. Hickernell, R. Pennell, and T. Hickernell, 'Thin-film resonator ladder filter', in IEEE MTT-S Int. Microwave Symp. Dig., Vol. 2, p. 887, 1995
5 A. Saxler, P. Kung, C. J. Sun, E. Bigan, and M. Razeghi, 'High quality aluminum nitride epitaxial layers grown on sapphire substrates', Appl. Phys. Lett., Vol. 64, p. 339, 1994   DOI   ScienceOn
6 Q.-X. Su, P. Kirby, E. Komuro, M. Imura, Q. Zhang, and R. Whatmore, 'Thin-film bulk acoustic resonators and filters using ZnO and lead-zirconium-titanate thin films', IEEE Trans. Microwave Theory Tech., Vol. 49, No. 4, p. 769, 2001   DOI   ScienceOn
7 M. A. Auger, L. Vazquez, M. Jergel, O. Sanchez, and J. M. Albella. 'Structure and morphology evolution of ALN films grown by DC sputtering', Surface and Coatings Technology, Vol. 180, p. 140, 2004   DOI   ScienceOn
8 S. A. Nikishin, N. N. Faleev, and M. Holtz, 'Vibrational properties of AlN grown on (111)-oriented silicon', The American Physical Society, Vol. 63, 2001
9 J. X. Zhanga, H. Chenga, Y. Z. Chena, A. Uddina, S. Yuana, S. J. Gengb, and S. Zhangb, 'Growth of AlN films on Si (100) and Si (111) substrates by reactive magnetron sputtering', Surface & Coatings Technology, Vol. 198, p. 68, 2005   DOI   ScienceOn