• Journal of Electrochemical Science and Technology
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• v.12 no.2
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• pp.212-216
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• 2021

We investigated the feasibility of hydrogen storage with electrochemically formed VO₂ nanotubes. The VO₂ nanotubes were fabricated through the anodization of vanadium metal in fluoride ion-containing organic electrolyte followed by an annealing process in an Ar-saturated atmosphere at 673 K for 3 h at a heating rate of 3 K /min. During anodization, the current density significantly increased up to 7.93 mA/cm² for approximately 500 s owing to heat generation, which led to a fast-electrochemical etching reaction of the outermost part of the nanotubes. By controlling the anodization temperature, highly ordered VO₂ nanotubes were grown on the metal substrate without using any binders or adhesives. Furthermore, we demonstrated the hydrogen sorption properties of the anodic VO₂ nanotubes.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.168-173
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• 2003

Recently, according to the rapid progress in Flat-panel-display industry, there has been a growing interest in the poly-Si process. Compared with a-Si, poly-Si offers significantly high carrier mobility, so it has many advantages to high response rate in Thin Film Transistors (TFT's). We have investigated a new process for the high temperature Solid Phase Crystallization (SPC) of a-Si films without any damages on glass substrates using thin film heater. because the thin film heater annealing method is a very rapid thermal process, it has very low thermal budget compared to the conventional furnace annealing. therefore it has some characteristics such as selective area crystallization, high temperature annealing using glass substrates. A 500 $\AA$-thick a-Si film was crystallized by the heat transferred from the resistively heated thin film heaters through $SiO_2$ intermediate layer. a 1000 $\AA$-thick $TiSi_2$ thin film confined to have 15 $\textrm{mm}^{-1}$ length and various line width from 200 to 400 $\mu\textrm{m}$ was used as the thin film heater. By this method, we successfully crystallized 500 $\AA$-thick a-Si thin films at a high temperature estimated above $850^{\circ}C$ in a few seconds without any thermal deformation of g1ass substrates. These surprising results were due to the very small thermal budget of the thin film heaters and rapid thermal behavior such as fast heating and cooling. Moreover, we investigated the time dependency of the SPC of a-Si films by observing the crystallization phenomena at every 20 seconds during annealing process. We suggests the individual managements of nucleation and grain growth steps of poly-Si in SPC of a-Si with the precise control of annealing temperature. In conclusion, we show the SPC of a-Si by the thin film heaters and many advantages of the thin film heater annealing over other processes

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.181.2-181.2
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• 2014

A single-layer graphene has been uniformly grown on a Cu surface at elevated temperatures by thermally processing a poly (methyl methacrylate) (PMMA) film in a rapid thermal annealing (RTA) system under vacuum. The detailed chemistry of the transition from solid-state carbon to graphene on the catalytic Cu surface was investigated by performing in-situ residual gas analysis while PMMA/Cu-foil samples being heated, in conjunction with interrupted growth studies to reconstruct ex-situ the heating process. We found that the gas species of mass/charge (m/e) ratio of 15 ($CH_3{^+}$) was mainly originated from the thermal decomposition of PMMA, indicating that the formation of graphene occurs with hydrocarbon molecules vaporized from PMMA, such as methane and/or methyl radicals, as precursors rather than by the direct graphitization of solid-state carbon. We also found that the temperature for dominantly vaporizing hydrocarbon molecules from PMMA and the length of time, the gaseous hydrocarbon atmosphere is maintained, are dependent on both the heating temperature profile and the amount of a solid carbon feedstock. From those results, we strongly suggest that the heating rate and the amount of solid carbon are the dominant factors to determine the crystalline quality of the resulting graphene film. Under optimal growth conditions, the PMMA-derived graphene was found to have a carrier (hole) mobility as high as ${\sim}2,700cm^2V^{-1}s^{-1}$ at room temperature, which is superior to common graphene converted from solid carbon.

• Journal of Korean Ophthalmic Optics Society
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• v.6 no.1
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• pp.133-137
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• 2001

The method to make glass is tried first thing in domestic study for glasses lens. Tg of glass KzFSl was measured by DSC experiment and press method of glass of meniscus shape was studied for minimize the cost. Tg was increased $483^{\circ}C$ to $501^{\circ}C$ with increasing heating rate $2^{\circ}C/min$ to $20^{\circ}C/min$. It shows Arrhenius temperature dependence and the activation energy of Tg is ${\Delta}E$=409 kJ/mole(4.25eV) by using Ozawa method and Tg is near $480^{\circ}C$. The melt of KzFSl powder was poured to concave cast stainless and pressed convex cast stainless. The quenched glass was slow cooled with cooling rate $0.25^{\circ}C/min$ in temperature range $520{\sim}430^{\circ}C$. The glass was made without strain. It has meniscus shape and same size to commercial glasses lens.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.05a
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• pp.355-356
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• 2009

The change of thermal expansion and mechanical behaviors by cold working has been investigated in Fe-29%Ni-17%Co low thermal expansion Kovar alloy. Fe-29%Ni-17%Co alloy was cold rolled gradually and prepared to plates having reduction ratio of 0%, 20%, 40%, 60%, and 80%. Annealing effect on the properties was also studied. Thermal expansion was measured from $25^{\circ}C$ to $600^{\circ}C$ with a heating rate of $5^{\circ}C$/min by using vacuum differential dilatometer. It was found that thermal expansion coefficient ($\alpha_{30{\sim}400}$) slightly decreased (reduction ration of 20%) and then remarkably increased (above reduction ration of 40%) with increasing reduction ratio of cold rolling. Thermal expansion coefficient ($\alpha_{30{\sim}400}$) was sharply decreased after annealing heat-treatment. Yield and tensile strengths were continuously increased and elongation was decreased by cold roiling. Microstructural observation and X-ray diffraction analysis results showed that the $\alpha$ phase significantly increased as the reduction ratio increased. The slight decrease of thermal expansion coefficient bellow reduction ration of 20% could be explained by the destroying short-range ordering and the decreasing of grain size. The significant increase of thermal expansion coefficient with cold rolling mainly attributed to the appearance of $\alpha$ phase. The correlation between the microstructural cause and invar phenomena for the low thermal expansion behavior was also discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.456-456
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• 2009

Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a ${\mu}c$-Si:H intrinsic layer was deposited on the p-a-Si:H layer additionally by PECVD. To improve heat transfer rate to the amorphous silicon layer, and as heating both sides and protecting boron eliminating from the amorphous silicon layer. For p-a-Si:H layer with the ratio of $SiH_4$ : $B_2H_6$ : $H_2$ = 30 : 30 : 120, at $200^{\circ}C$, 50 W, 0.2 Torr for 30 minutes, and for ${\mu}c$-Si:H intrinsic layer, $SiH_4$ : $H_2$ = 10 : 300, at $200^{\circ}C$, 30 W, 0.5 Torr for 60 minutes, 2 cm $\times$ 2 cm size wafers were used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 20 ~ 27 % of power, 150 ~ 160 kHz, 20 ~ 50 mm/s of marking speed, and $10\;{\sim}\;50 {\mu}m$ spacing with continuous wave mode of scanner lens showed the correlation between lifetime and sheet resistance as $100\;{\Omega}/sq$ and $11.8\;{\mu}s$ vs. $17\;{\Omega}/sq$ and $8.2\;{\mu}s$. Comparing to the singly deposited p-a-Si:H layer case, the additional ${\mu}c$-Si:H layer for doping resulted in no trade-offs, but showed slight improvement of both lifetime and sheet resistance, however sheet resistance might be confined by the additional intrinsic layer. This might come from the ineffective crystallization of amorphous silicon layer. For the additional layer case, lifetime and sheet resistance were measured as $84.8\;{\Omega}/sq$ and $11.09\;{\mu}s$ vs. $79.8\;{\Omega}/sq$ and $11.93\;{\mu}s$. The co-existence of $n^+$layeronthesamesurfaceandeliminating the laser damage should be taken into account for an IBC solar cell structure. Heavily doped uniform boron layer by fiber laser brings not only basic and essential conditions for the beginning step of IBC solar cell fabrication processes, but also the controllable doping concentration and depth that can be established according to the deposition conditions of layers.

• Journal of the Korean Society for Heat Treatment
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• v.29 no.2
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• pp.51-55
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• 2016

The P/M processing of titanium aluminide using amorphous TiAl is developed by which it is possible to overcome inherent fabricability problems and to obtain a fine microstructure. A high quality amorphous TiAl powder produced by reaction ball milling shows clear glass transition far below a temperature at the onset of crystallization in differential scanning calorimetry above a heating rate of 0.05 K/s. We obtained a fully dense compact of amorphous TiAl powders, encapsulated in a vacuumed can, via viscous flow by hot isostatic pressing (HIP). Isothermally annealing of HIP'ed amorphous compact under a pressure of 196 MPa shows a progressive growth of ${\gamma}-TiAl$ phase with ${\alpha}2$ ($Ti_3Al$), which is characterized by increasing sharpness of X-ray peaks with temperature. Fully dense HIP'ed compact of titanium aluminide TiAl shows a high hardness of 505 Hv, suggesting strengthening mechanisms by sub-micron sized grain of ${\gamma}-TiAl$ and particle-dispersion by second phase constituent, ${\alpha}2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.458-462
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• 2008

In this paper, we investigated the (002) preferred orientation and morphology characteristics of AlN thin film by using reactive rf sputtering. Additionally, AlN thin films grown in the range from 150 to 300 W were studied under room temperature without substrate heating and post annealing. Sputtered AlN thin films were well grown on Si substrates and the (002) main peak in XRD patterns showed the highest intensity at 300 W with $0.25^{\circ}$ degree of full width at half-maximum (FWHM). As increased RF power, the surface roughness was increased from 1.0 to 3.4 nm. In Fourier transformation infrared spectroscopy (FTIR), $A_1$ (TO) and $E_1$ (TO) mode closed to AlN thin film confirmed the changes with increasing the intensity rate. From these results, we could confirm a chance of the growth of AlN thin film by only low temperature.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.449-454
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• 2002

A rectangular straight microchannel, integrated with the resistance temperature detectors(RTDs) for temperature sensing and a micro-heater for generating the Temperature gradient along the channel, was fabricated. Its dimension is 57${\mu}{\textrm}{m}$(H)$\times$200${\mu}{\textrm}{m}$(W)$\times$48,050${\mu}{\textrm}{m}$(L), and RTDs were placed at the inner-channel wall. Si wafer was used as a substrate. For the fabrication of RTDs, 5300$\AA$ thick Pt/Ti layer was sputtered on a Pyrex glass wafer. Finally, the glass wafer was bonded with Si wafer by anodic bonding, so that the RTDs are located inside the microchannel. Temperature coefficient of resistance(TCR) values of the fabricated Pt-RTDs were 2800~2950ppm$^{\circ}C$ and the variation of TCR value In the range of O~10$0^{\circ}C$ was less than 0.3％. Therefore, it was proved that the fabricated Pt-RTDs without annealing were excellent as temperature sensors. The temperature distribution in the microchannel was investigated as a function of mass flow rate and heating power. The temperature increase rate diminished with decreasing the applied power and increasing the mass flow rate. It was confirmed from the comparison with the simulation results that the temperature measured inside the microchannel is more accurate than measuring the temperature measured at the outer wall. The proposed temperature sensing method and microchannel are expected to be useful in microfluidics researches.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.329-337
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• 2001

It has been known that the leakage current in the low field region consists of the dielectric relaxation current and intrinsic leakage current, which cause the charge loss in dynamic random access memory (DRAM) storage capacitor using (Ba,Sr)TiO$_{3}$ (BST) thin film. Especially, the dielectric relaxation current should be seriously considered since its magnitude is much larger than that of the intrinsic leakage current in giga-bit DRAM operation voltage (~IY). In this study, thermally stimulated current (TSC) measurement was at first applied to investigate the activation energy of traps and relative evaluation of the density of traps according to process change. And, through comparing TSC to early methods of I-V or I-t measurement and analyzing, we identify the origin of the dielectric relaxation current and investigate the reliability of TSC measurement. First, the polarization condition such as electric field, time, temperature and heating rate was investigated for reliable TSC measurement. From the TSC measurement, the energy level of traps in the BST thin film has been investigated and evaluated to be 0.20($\pm$0.01) eV and 0.45($\pm$0.02) eV. Based on the TSC measurement results before and after rapid thermal annealing (RTA) process, oxygen vacancy is concluded to be the origin of the traps. TSC characteristics with thermal annealing in the MIM BST capacitor have shown the same trends with the current-voltage (I-V) and current-time (I-t) characteristics. This means that the TSC measurement is one of the effective methods to characterize the traps in the BST thin film.