• 열처리공학회지
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• 제33권2호
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• pp.57-64
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• 2020

In the present study, we investigated whether the surface oxidation of C-bearing TWIP steel ℃curs in the air during specimen delivery from an annealing furnace to a water bath and how the microstructure and tensile properties are influenced by surface oxidation. A cold-rolled Fe-18Mn-0.6 (wt%) steel was exposed in the air for 5 s after annealing at various temperatures (750℃, 850℃ and 1000℃) for 10 min in a vacuum, and then water-quenched. For comparison, another specimen, which had been quartz-sealed in a vacuum, was annealed at 1000℃ for 10 min and immediately water-quenched without exposure to air. The 750℃ and 850℃-annealed specimens and the quartz-sealed specimen showed a γ-austenite single phase in the entire specimen due to negligible surface oxidation. However, the 1000℃-annealed specimen exhibited a dual-phase microstructure consisting of ε-martensite and γ-austenite at the sub-surface due to decarburization. Whereas the specimens without decarburization revealed high elongations of 70-80%, the decarburized specimen exhibited a low elongation of ~40%, indicating premature failure due to cracking inside the decarburized layer with ε-martensite and γ-austenite.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.62.1-62
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• 2003

Silicon oxide with thickness lee than 9 nm is fabricated by tube furnace oxidation. Nitrogen is added to dilute the oxidation rate. Aluminum dots with radius of 0.05 cm are deposited on the oixde. High frequency capacitance-voltage(HF C-V), conductance-voltage(G-V) and current-voltage(I-V) characteristics are measured. Annealing under nitrogen atmosphere is carried out with different time and at different temperature. Densities of the interface states before and after annealing are compared. After annealing, a decrease in density of the interface states is found. Experiments show that 45$0^{\circ}C$ annealing for 30 minutes has the lowest density of the interface states.

• ETRI Journal
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• 제13권2호
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• pp.21-27
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• 1991

Effects of annealing on the dielectric properties and microstructures of thin tantalum oxide film(25nm) deposited on p-type Si substrate with rf reactive magnetron sputtering were investigated. The leakage current density was remarkably reduced from $10^-8$ to $10^-12$ A/$\mum^2$at the electric field of 2MV/cm after rapid thermal annealing(RTA) in $O_2$at $1000^{\circ}C$, while little leakage reduction was observed after furnace annealing in $O_2$ at $500^{\circ}C$. The structural changes of thin tantalum oxide film after annealing were examined using high resolution electron microscope(HREM). The results of HREM show that substantial reduction in the leakage current density after the RTA in $O_2$ can be attributed to crystallization and reoxidation of the thin amorphous tantalum oxide film.

• 한국전기전자재료학회논문지
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• 제15권4호
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• pp.301-307
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• 2002

Direct bonded SOI wafer pairs with $Si ll SiO_2/Si_3N_4 ll Si$ the heterogeneous insulating layers of SiO$_2$-Si$_3$N$_4$are able to apply to the micropumps and MEMS applications. Direct bonding should be executed at low temperature to avoid the warpage of the wafer pairs and inter-diffusion of materials at the interface. 10 cm diameter 2000 ${\AA}-SiO_2/Si(100}$ and 560 $\AA$- ${\AA}-Si_3N_4/Si(100}$ wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were pre- mated with facing the mirror planes by a specially designed aligner in class-100 clean room immediately. We employed a heat treatment equipment so called fast linear annealing(FLA) with a halogen lamp to enhance the bonding of pre mated wafers We kept the scan velocity of 0.08 mm/sec, which implied bonding process time of 125 sec/wafer pairs, by varying the heat input at the range of 320~550 W. We measured the bonding area by using the infrared camera and the bonding strength by the razor blade clack opening method, respective1y. It was confirmed that the bonding area was between 80% and to 95% as FLA heat input increased. The bonding strength became the equal of $1000^{\circ}C$ heat treated $Si ll SiO_2/Si_3N_4 ll Si$ pair by an electric furnace. Bonding strength increased to 2500 mJ/$\textrm{m}^2$as heat input increased, which is identical value of annealing at $1000^{\circ}C$-2 hr with an electric furnace. Our results implies that we obtained the enough bonding strength using the FLA, in less process time of 125 seconds and at lowed annealing temperature of $400^{\circ}C$, comparing with the conventional electric furnace annealing.

• 한국진공학회지
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• 제6권4호
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• pp.326-336
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• 1997

트랜지스터의 소오스/드레인 접합 특성에 가장 큰 영향을 미치는 인자는 이온 주입 시 발생한 실리콘 내에 발생한 결합이라는 사실에 착안하여, 기존 소오스/드레인 접합 형성 공정과 다른 새로운 방식을 도입하여 이온 주입에 의해 생긴 결함의 제어를 통해 고품질 초 저접합 $p^+$-n접합을 형성하였다. 기존의 $p^+$소오스/드레인 접합 형성 공정은 $^{49}BF_2^+$ 이온 주입 후 층간 절연막들인 TEOS(Tetra-Ethyl-Ortho-Silicate)막과 BPSG(Boro-Phospho-Silicate-Glass)막을 증착 후 BPSG막 평탄화를 위한 furnace annealing 공정으로 진행된다. 본 연구에서는 이러한 기존 공정과는 달리 층간 절연막 증착 전 저온 RTA첨가 방법, $^{49}BF_2^+$와 $^{11}B^+$ 을 혼합하여 이온 주입하는 방법, 그리고 이온 주입 후 잔류 산화막을 제거하고 MTO(Medium temperature CVD oxide)를 증착하는 방법을 제시하 였으며, 각각의 방법은 모두 이온 주입에 의한 실리콘 내 결합 농도를 줄여 기존의 방법보 다 더 우수한 양질의 초 저접합을 형성할 수 있었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 춘계학술발표회 초록집
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• pp.31-32
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• 2007

자동차 도장 전처리 공정 중 인산염처리는 소지와 도장층 사이의 밀착성을 향상시키고, 강판의 내식성을 향상시키는 목적으로 행하여진다. 인산염 조직이 치밀하게 형성되지 못하면 도장층 박리 등의 불량이 발생할 수 있다. 본 연구에서는 전기로재 BAF(Batch Annealing Furnace) 냉연강판의 인산염처리 특성에 대한 분석 및 개선안 도출 과정을 서술하였다.

• 한국인터넷방송통신학회논문지
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• 제8권6호
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• pp.105-110
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• 2008

질소 분위기 하에서 GaN 에피층의 고온 급속 열처리 효과를 조사하였다. 열처리는 950도의 급속 열처리로를 이용하여 수행하였다. 급속 열처리에 따른 효과는 x선 회절을 통하여 연구하였다. 열처리 시간이 증가할수록 Bragg 피크는 각도가 큰 쪽으로 이동하였다. 피크의 FWHM은 열처리 시간이 증가함에 따라 약간의 증가 후 감소하였다가 다시 증가하였다. 시료는 적절한 조건 하에서 급속 열처리 후 구조적인 특성의 개선이 관측되었다. 시료의 결정성의 향상은 에피층의 격자 관련 요소들의 흐트러짐의 감소에 기인한다.

• 한국표면공학회지
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• 제33권2호
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• pp.101-106
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• 2000

SOI (Silicon-On-Insulator) substrates were fabricated with varying annealing temperature of $25-660^{\circ}C$ by a linear annealing method, which was modified RTA process using a linear shape heat source. The annealing method was applied to Si ∥ $SiO_2$/Si pair pre-contacted at room temperature after wet cleaning process. The bonding strength of SOI substrates was measured by two methods of Razor-blade crack opening and direct tensile test. The fractured surfaces after direct tensile test were also investigated by the optical microscope as well as $\alpha$-STEP gauge. The interface bonding energy was 1140mJ/m$^2$ at the annealing temperature of $430^{\circ}C$. The fracture strength was about 21MPa at the temperature of $430^{\circ}C$. These mechanical properties were not reported with the conventional furnace annealing or rapid thermal annealing method at the temperature below $500^{\circ}C$. Our results imply that the bonded wafer pair could endure CMP (Chemo-Mechanical Polishing) or Lapping process without debonding, fracture or dopant redistribution.

• 열처리공학회지
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• 제19권3호
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• pp.149-155
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• 2006

The effects of eight types of spheroidizing annealing conditions including annealing temperature, annealing time, cooling rate, and gas atmosphere in the annealing furnace on the microstructure were determined in SM45C steel which has been widely used for automotive parts. The well-developed spheroidized structure and minimum hardness were obtained when the steel was heat-treated 6 hours at $740^{\circ}C$, cooled to $710^{\circ}C$ at a cooling rate of $24^{\circ}C/h$, and then kept for 7 hours at the $710^{\circ}C$ followed by air cooling. In order to increase the productivity and to save the manufacturing cost, it is desirable to apply a faster cooling rate in the spheroidizing annealing. It was found that air cooling was the fastest cooling rate applicable to the SM45C steel. The steel heat treated in air showed the decarburized layer of about $110{\mu}m$ in thickness at the surface of the specimen, resulting in serious problems in the quality of the quenched product.

• 열처리공학회지
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• 제19권5호
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• pp.270-279
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• 2006

The effects of eight types of spheroidizing annealing conditions including annealing temperature, annealing time, cooling rate, and furnace atmosphere on the microstructure and hardeness were determined in SCM440 steel which has been widely used for automotive parts. The well-spheroidized structure and minimum hardness were obtained when the steel was heat-treated at $770^{\circ}C$ for 6 hours, cooled to $720^{\circ}C$ at a cooling rate of $24^{\circ}C/h$, and then kept for 7 hours at the $720^{\circ}C$ followed by air cooling. In order to increase the productivity and to save the manufacturing cost, it is desirable to apply a faster cooling rate to the spheroidizing annealing. It was found that a cooling rate of $100^{\circ}C/hr$ was the fastest cooling rate applicable to the SCM440 steel among the four cooling rates used in this study. The microstructure consisted of ferrite and very fine spheroidized cementite when the steel was annealed for 13 hours at $720^{\circ}C$ below $A_{C1}$ temperature. This was caused by the short annealing time and the retarding effect of Cr and Mo on both the dissolution of pearlite to cementite and coarsening of spheroidized cementite. The steel heat treated in air showed the decarburized layer of about $125{\mu}m$ in thickness at the surface.