• Title/Summary/Keyword: anisotropic etching

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The Improved Characteristics of Wet Anisotropic Etching of Si with Megasonic Wave (Megasonic wave를 이용한 실리콘 이방성 습식 식각의 특성 개선)

  • Che Woo-Seong;Suk Chang-Gil
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.4 s.33
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    • pp.81-86
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    • 2004
  • A new method to improve the wet etching characteristics is described. The anisotropic wet-etching of (100) Si with megasonic wave has been studied in KOH solution. Etching characteristics of p-type (100) 6 inch Si have been explored with and without megasonic irradiation. It has been observed that megasonic irradiation improves the characteristics of wet etching such as an etch uniformity and surface roughness. The etching uniformity on the whole wafer with and without megasonic irradiation were less than ${\pm}1\%$ and more than $20\%$, respectively. The initial root-mean-square roughness($R_{rms}$) of single crystal silicon is 0.23 nm. It has been reported that the roughnesses with magnetic stirring and ultrasonic agitation were 566 nm and 66 nm, respectively. Comparing with the results, etching with megasonic irradiation achieved the Rrms of 1.7 nm on the surface after the $37{\mu}m$ of etching depth. Wet etching of silicon with megasonic irradiation can maintain nearly the original surface roughness after etching process. The results have verified that the megasonic irradiation is an effective way to improve the etching characteristics such as etch uniformity and surface roughness.

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Fabrication of 3-dimensional magnetic sensor by anisotropic etching in TMAH (TMAH에 의한 이방성 식각을 이용한 3차원 자기센서의 제작)

  • Jung, Woo-Chul;Nam, Tae-Chul
    • Journal of Sensor Science and Technology
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    • v.8 no.4
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    • pp.308-313
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    • 1999
  • This paper will present an anisotropic etching in TMAH technique used in the fabrication of three-dimensional magnetic field vector sensor based on angled Hall plate structure. This sensor design relies on simultaneously detecting all magnetic field vector components using Hall plates that are imbedded into the silicon [111] sloped-surface of bulk micromachined cavity by the anisotropic etching of [100] silicon. The fabricated Hall elements has relatively improved sensitivity compare to convensional Hall elements for three-dimensional magnetic field sensing. The product sensitivity of 547V/AT at the supply current of 1.0mA was achived. The corresponding limit in the detection of magnrtic field is 0.07G that calculated by measured power spectral density(PSD) in magnetic sensor output.

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The characterization of anisotropic Si wafer etching and fabrication of flip chip solder bump using transferred Si carrier (Si웨이퍼의 이방성 식각 특성 및 Si carrier를 이용한 플립칩 솔더 범프제작에 관한 연구)

  • Mun Won-Cheol;Kim Dae-Gon;Seo Chang-Jae;Sin Yeong-Ui;Jeong Seung-Bu
    • Proceedings of the KWS Conference
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    • 2006.05a
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    • pp.16-17
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    • 2006
  • We researched by the characteristic of a anisotropic etching of Si wafer and the Si career concerning the flip chip solder bump. Connectors and Anisotropic Conductive Film (ACF) method was already applied to board-to-board interconnection. In place of them, we have focused on board to board interconnection with solder bump by Si carrier, which has been used as Flip chip bonding technology. A major advantage of this technology is that the Flexible Printed Circuit (FPC) is connected in the same solder reflow process with other surface mount devices. This technology can be applied to semiconductors and electronic devices for higher functionality, integration and reliability.

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Variation of Electric Properties Depending on Isotropic and Anisotropic Texturing of Solar Cell (등방성 에칭과 이방성 에칭이 태양전지 셀의 전기적인 특성에 미치는 효과)

  • Oh, Teresa
    • Journal of the Semiconductor & Display Technology
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    • v.10 no.4
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    • pp.31-35
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    • 2011
  • For high efficiency of Si-cells, Si wafers were textured by the KOH and NaOH etching solution to decreas the reflectance at surfaces of the cells. The textured surfaces were shown various types such as isotropic and anisotropic depending on the etching solution. The reflectance at sample of an anisotropic form with pyramid type was lower than that of isotropic form. The surface with isotropic form of general tiny circles on the surface increased the efficiency, however, the reflectance of it was increased. The efficiency was increased on surface with low roughness.

Effects of $C_2F_{6}$ Gas on Via Etching Characteristics ($C_2F_{6}$ 가스가 Via Etching 특성에 미치는 영향)

  • Ryu, Ji-Hyeong;Park, Jae-Don;Yun, Gi-Wan
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.1
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    • pp.31-38
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    • 2002
  • In order to improve the 0.35 $mutextrm{m}$-via hole etching process the etching characteristic of the gas $C_2F_{6}$ has been analyzed. The samples were triple-layer films(TEOS/SOG/TEOS) on 8-inch wafers and the orthogonal array matrix technique was used for the process. The equipment for etching was the transformer coupled plasma (TCP) source which is a type of high density plasma(HDP). This experiment showed the etching rate for $C_2F_{6}$ was 0.8 $mutextrm{m}$/min-1.1 $mutextrm{m}$/min and the measured uniformity was under $pm$6.9% in the matrix window. The CD skew comparison between pre and post-etching was under 10% which is an outstanding results in the window of profile in anisotropic etching. There was no problem in C2F6 with the flow rate of 20sccm, but when 14sccm of $C_2F_{6}$ was supplied there was a recess problem on the inner wall of SOG film. Consequently the etching characteristic of $C_2F_{6}$ shows a fast etching rate and a very wide process window in HDP TCP.

A study on the corner compensation in anisotropic TMAH etching for pendulum structure (펜듈럼 구조체 제작을 위한 TMAH 습식 식각 시 모서리 보상에 관한 연구)

  • Han, Kyu-Sung;Lee, Ki-Jung;Park, Sin-Wook;Yang, Sang-Sik
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.2241-2242
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    • 2008
  • Anisotropic TMAH etching is key processing step for the fabrication of pendulum structure. During the etching, convex corners are attacked, and a proper compensating structure design is required when fabricating pendulum structures with sharp convex corner. In this paper, we present four compensation structures for convex corner compensation with 30% wt TMAH-water solution at $89\pm1^{\circ}C$ temperature, and observe the etched convex corner by optical microscope. we compare the result of calculations and experiments about four convex corner compensation patterns.

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Short Consideration on the Non-Uniformities Existing at the Etched-edges in Deep Anisotropic Etching of(100) Silicon ((100) 실리콘의 깊은 이등망성 식각시 석각면의 가장자리에 존재하는 불균일성의 짤막한 고찰)

  • Ju, Byeong-Kwon;Ha, Byeoung-Ju;Kim, Chul-Ju;Oh, Myung-Hwan;Tchah, Kyun-Hyon
    • Korean Journal of Materials Research
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    • v.2 no.5
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    • pp.383-386
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    • 1992
  • In deep anisotropic etching of (100)-oriented Si substrate, it could be observed that the non-uniformities existing near the etched-edge were caused by lattice defects and mechanical stress at the etching interface.

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Design of Single-wafer Wet Etching Bath for Silicon Wafer Etching (실리콘 웨이퍼 습식 식각장치 설계 및 공정개발)

  • Kim, Jae Hwan;Lee, Yongil;Hong, Sang Jeen
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.2
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    • pp.77-81
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    • 2020
  • Silicon wafer etching in micro electro mechanical systems (MEMS) fabrication is challenging to form 3-D structures. Well known Si-wet etch of silicon employs potassium hydroxide (KOH), tetramethylammonium hydroxide (TMAH) and sodium hydroxide (NaOH). However, the existing silicon wet etching process has a fatal disadvantage that etching of the back side of the wafer is hard to avoid. In this study, a wet etching bath for 150 mm wafers was designed to prevent back-side etching of silicon wafer, and we demonstrated the optimized process recipe to have anisotropic wet etching of silicon wafer without any damage on the backside. We also presented the design of wet bath for 300 mm wafer processing as a promising process development.

Effects of Grooved Surface with Nano-ridges on Silicon Substrate on Anisotropic Wettability (실리콘 기판 위에 제작된 나노 크기의 구조물을 가진 그루브 표면이 이방성 젖음에 미치는 영향)

  • Lee, Dong-Ki;Cho, Younghak
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.22 no.3_1spc
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    • pp.544-550
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    • 2013
  • A grooved surface with anisotropic wettability was fabricated on a silicon substrate using photolithography, reactive ion etching, and a KOH etching process. The contact angles (CAs) of water droplets were measured and compared with the theoretical values in the Cassie state and Wenzel state. The experimental results showed that the contact area between a water droplet and a solid surface was important to determine the wettability of the water. The specimens with native oxide layers presented CAs ranging from $71.6^{\circ}$ to $86.4^{\circ}$. The droplets on the specimens with a native oxide layer could be in the Cassie state because they had relatively smooth surfaces. However, the CAs of the specimens with thick oxide layers ranged from $33.4^{\circ}$ to $59.1^{\circ}$. This indicated that the surface roughness for a specimen with a relatively thick oxide layer was higher, and the water droplet was in the Wenzel state. From the CA measurement results, it was observed that the wetting on the grooved surface was anisotropic for all of the specimens.

Study on Photoelectrochemical Etching of Single Crystal 6H-SiC (단결정 6H-SiC의 광전화학습식식각에 대한 연구)

  • 송정균;정두찬;신무환
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.2
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    • pp.117-122
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    • 2001
  • In this paper, we report on photoelectrochemical etching process of 6H-SiC semiconductor wafer. The etching was performed in two-step process; anodization of SiC surface to form a deep porous layer and thermal oxidation followed by an HF dip. Etch rate of about 615${\AA}$/min was obtained during the anodization using a dilute HF(1.4wt% in H$_2$O) electrolyte with the etching potential of 3.0V. The etching rate was increased with the bias voltage. It was also found out that the adition of appropriate portion of H$_2$O$_2$ into the HF solution improves the etching rate. The etching process resulted in a higherly anisotropic etching characteristics and showed to have a potential for the fabrication of SiC devices with a novel design.

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