• 마이크로전자및패키징학회지
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• 제11권4호
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• pp.81-86
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• 2004

메가소닉파을 이용하여 KOH 용액에서의 실리콘 이방성 습식 식각의 특성들을 개선하기 위한 새로운 방법에 관한 연구를 하였다. P형 6인치 실리콘 웨이퍼를 메가소닉파를 이용한 상태와 이용하지 않은 상태에서 식각 실험을 각각 수행하여 식각 특성들을 비교하였다. 메가소닉파는 식각균일도, 표면 조도 등과 같은 습식 식각의 특성들을 개선시키는 것으로 나타났다. 메가소닉파를 이용했을 때 식각 균일도는 전체 웨이퍼 표면의 ${\pm}1\%$ 이하이며, 메가소닉파를 이용하지 않았을 때는 ${\pm}20\%$이상이다. 식각 공정에 사용한 초기의 실리콘웨이퍼의 제곱 평균 표면 조도($R_{rms}$)는 0.23 nm이다. 자기 진동과 초음파 진동을 이용한 식각에서의 평균 표면 조도는 각각 566 nm, 66 nm로 보고 되었지만, 메가소닉파를 이용하여 $37{\mu}m$ 깊이로 식각한 경우 평균 표면 조도가 1.7nm임을 실험을 통하여 검증하였다. 이러한 결과는 메가소닉파를 이용한 식각 방법이 식각 균일도, 표면 평균 조도 등과 같은 식각 특성들을 개선시키는데 효과적인 방법임을 알 수 있다.

• 센서학회지
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• 제8권4호
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• pp.308-313
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• 1999

본 논문에서는 TMAH를 이용한 비등방성 에칭기술을 이용하여 3차원의 자장의 값을 측정하기 위한 경사각 구조의 3차원 자기센서를 제작하였다. 제작된 3차원 자기센서는 비등방성 식각에 의하여 [100] 결정방향의 Si 표면에 [111] 결정방향의 경사면을 구성하여 이 경사면에 경사각 Hall 소자를 제작하였으며, 기존의 3차원 자기센서에 비하여 개선된 감도 특성을 나타내었다. 제작된 소자의 적감도는 547V/AT 이었으며 자기센서 출력의 PSD 성분의 측정에 의해 계산 되어진 최소측정 자장은 0.07G 이었다.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2006년도 춘계 학술대회 개요집
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• pp.16-17
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• 2006

We researched by the characteristic of a anisotropic etching of Si wafer and the Si career concerning the flip chip solder bump. Connectors and Anisotropic Conductive Film (ACF) method was already applied to board-to-board interconnection. In place of them, we have focused on board to board interconnection with solder bump by Si carrier, which has been used as Flip chip bonding technology. A major advantage of this technology is that the Flexible Printed Circuit (FPC) is connected in the same solder reflow process with other surface mount devices. This technology can be applied to semiconductors and electronic devices for higher functionality, integration and reliability.

• 반도체디스플레이기술학회지
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• 제10권4호
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• pp.31-35
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• 2011

For high efficiency of Si-cells, Si wafers were textured by the KOH and NaOH etching solution to decreas the reflectance at surfaces of the cells. The textured surfaces were shown various types such as isotropic and anisotropic depending on the etching solution. The reflectance at sample of an anisotropic form with pyramid type was lower than that of isotropic form. The surface with isotropic form of general tiny circles on the surface increased the efficiency, however, the reflectance of it was increased. The efficiency was increased on surface with low roughness.

• 대한전자공학회논문지SD
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• 제39권1호
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• pp.31-38
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• 2002

0.35㎛-비아(via) 식각공정을 개선하기 위하여 C₂F/sub 6/가스의 식각특성을 분석하였다. 실험한 재료는 TEOS/SOG/TEOS 막을 올린 8인치 웨이퍼이며, 실험의 기법은 직교행열(Orthogonal array matrix) 실험 방식을 활용하였다. 산화막 식각에 이용된 장비는 transformer coupled plasma(TCP) source 방식이며 고밀도 플라즈마(HDP)장비이다. 실험의 결과는, 실험변수의 범위 내에서 C₂F/sub 6/는 0.8㎛/min-1.l㎛/min 범위의 식각속도를 보이며 균일도(Uniformity)는 ±6.9%미만으로 측정되었다. CD 변화(skew)는 식각 전과 후를 비교하여 10% 미만이었고 그 결과 비등방성(anisotropic) 식각의 특성이 우수하였다. C₂F/sub 6/를.20sccm 공급할 때 문제점이 발견되지 않았지만 14sccm을 공급하면 SOG 막의 내벽이 침식당하는 문제점이 있었다. 결과적으로 C₂F/sub 6/는 HDP TCP에서 빠른 식각비와 넓은 공정창(process window)을 가진 식각특성을 나타내었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.2241-2242
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• 2008

Anisotropic TMAH etching is key processing step for the fabrication of pendulum structure. During the etching, convex corners are attacked, and a proper compensating structure design is required when fabricating pendulum structures with sharp convex corner. In this paper, we present four compensation structures for convex corner compensation with 30% wt TMAH-water solution at $89\pm1^{\circ}C$ temperature, and observe the etched convex corner by optical microscope. we compare the result of calculations and experiments about four convex corner compensation patterns.

• 한국재료학회지
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• 제2권5호
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• pp.383-386
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• 1992

(100) 실리콘 기판에 대해 깊온 비등방성 식각을 행한 경우 식각면의 가장자리에 존재하는 욜균일성은 식각 계면의 격자결함과 기계적 응력에 의한 것임을 판찰할 수 있었다.

• 반도체디스플레이기술학회지
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• 제19권2호
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• pp.77-81
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• 2020

Silicon wafer etching in micro electro mechanical systems (MEMS) fabrication is challenging to form 3-D structures. Well known Si-wet etch of silicon employs potassium hydroxide (KOH), tetramethylammonium hydroxide (TMAH) and sodium hydroxide (NaOH). However, the existing silicon wet etching process has a fatal disadvantage that etching of the back side of the wafer is hard to avoid. In this study, a wet etching bath for 150 mm wafers was designed to prevent back-side etching of silicon wafer, and we demonstrated the optimized process recipe to have anisotropic wet etching of silicon wafer without any damage on the backside. We also presented the design of wet bath for 300 mm wafer processing as a promising process development.

• 한국생산제조학회지
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• 제22권3_1spc호
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• pp.544-550
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• 2013

A grooved surface with anisotropic wettability was fabricated on a silicon substrate using photolithography, reactive ion etching, and a KOH etching process. The contact angles (CAs) of water droplets were measured and compared with the theoretical values in the Cassie state and Wenzel state. The experimental results showed that the contact area between a water droplet and a solid surface was important to determine the wettability of the water. The specimens with native oxide layers presented CAs ranging from $71.6^{\circ}$ to $86.4^{\circ}$. The droplets on the specimens with a native oxide layer could be in the Cassie state because they had relatively smooth surfaces. However, the CAs of the specimens with thick oxide layers ranged from $33.4^{\circ}$ to $59.1^{\circ}$. This indicated that the surface roughness for a specimen with a relatively thick oxide layer was higher, and the water droplet was in the Wenzel state. From the CA measurement results, it was observed that the wetting on the grooved surface was anisotropic for all of the specimens.

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.117-122
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• 2001

In this paper, we report on photoelectrochemical etching process of 6H-SiC semiconductor wafer. The etching was performed in two-step process; anodization of SiC surface to form a deep porous layer and thermal oxidation followed by an HF dip. Etch rate of about 615${\AA}$/min was obtained during the anodization using a dilute HF(1.4wt% in H$_2$O) electrolyte with the etching potential of 3.0V. The etching rate was increased with the bias voltage. It was also found out that the adition of appropriate portion of H$_2$O$_2$ into the HF solution improves the etching rate. The etching process resulted in a higherly anisotropic etching characteristics and showed to have a potential for the fabrication of SiC devices with a novel design.