• 한국연소학회:학술대회논문집
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• 한국연소학회 2007년도 제34회 KOSCO SYMPOSIUM 논문집
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• pp.86-91
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• 2007

A study was performed to understand self-excited pressure fluctuations in the lean premixed flames and to evaluate the effect of Helmholtz resonator on the pressure fluctuations. As low-frequency pressure fluctuations have been reported to cause fatal damage to the combustor and the entire system, Helmholtz-type resonators, which reduce the damage by low-frequency pressure fluctuation in the combustor, are attached to the channel of unburned mixture flow. It is found that the range of low-frequency pressure fluctuations of flame mode 2 is narrowed by the attachment of Helmholtz resonators. From this result, if Helmholtz-type resonators are applied to actual gas turbine combustor, it is confirmed that Helmholtz resonators attached on the fuel discharge hole are also effective for narrowing the range of flame mode 2

• ETRI Journal
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• 제34권2호
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• pp.280-283
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• 2012

By inserting $H_2O$ treatment steps during atomic layer deposition of a ZnO layer, the turn-on voltage shift from negative bias stress (NBS) under illumination was reduced considerably compared to that of a device that has a continuously grown ZnO layer without any treatment steps. Meanwhile, treatment steps without introducing reactive gases, and simply staying under a low working pressure, aggravated the instability under illuminated NBS due to an increase of oxygen vacancy concentration in the ZnO layer. From the experiment results, additional oxidation of the ZnO channel layer is proven to be effective in improving the stability against illuminated NBS.

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 2003년도 The Fifth Asian Computational Fluid Dynamics Conference
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• pp.118-120
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• 2003

The behavior of viscous fingerings caused by an external force is investigated by using a two­phase lattice Boltzmann method. The effects of the modified capillary number, the viscosity contrast, and the modified Darcy-Rayleigh number on the instability of interfaces are found. The calculated wave numbers are in good agreement with the theoretical ones in the range of wave numbers smaller than 10, but the calculated ones tend to become smaller than the theoretical ones in higher wave numbers.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1995년도 추계학술발표회논문집(1)
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• pp.475-479
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• 1995

During the hypothetical loss of coolant accident in the nuclear power plant the emergency core cooling water could not penetrate to the reactor core when the steam flow rate from the reactor core exceeds CCFL (Countercurrent flow limitation). The CCFL generated by earlier investigators are developed under the steady gas flow. However the flow instability in the reactor loop could generate oscillatory steam flow, hence their applicability under oscillating flow should be investigated. In this work, an experimental investigation of countercurrent flow in the vertical flow channel has been conducted under oscillatory gas flow. Pulsation of gas under oscillatory flow disturbs the flow pattern significantly and prevents flooding (CCFL) when its minimum value is less than the threshold gas flow rate value.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권5호
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• pp.526-532
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• 2015

We quantitatively investigated instability mechanisms under simultaneous positive gate and drain bias stress (SPGDBS) in self-aligned top-gate amorphous indium-zinc-oxide thin-film transistors. After SPGDBS ($V_{GS}=13V$and $V_{DS}=13V$), the parallel shift of the transfer curve into a negative $V_{GS}$ direction and the increase of on current were observed. In order to quantitatively analyze mechanisms of the SPGDBS-induced negative shift of threshold voltage (${\Delta}V_T$), we experimentally extracted the density-of-state, and then analyzed by comparing and combining measurement data and TCAD simulation. As results, 19% and 81% of ${\Delta}V_T$ were taken to the donor-state creation and the hole trapping, respectively. This donor-state seems to be doubly ionized oxygen vacancy ($V{_O}^{2+}$). In addition, it was also confirmed that the wider channel width corresponds with more negative ${\Delta}V_T$. It means that both the donor-state creation and hole trapping can be enhanced due to the increase in self-heating as the width becomes wider. Lastly, all analyzed results were verified by reproducing transfer curves through TCAD simulation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.217-217
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• 2016

The amorphous InGaZnO (a-IGZO) is widely accepted as a promising channel material for thin-film transistor (TFT) applications owing to their outstanding electrical properties [1, 2]. However, a-IGZO TFTs have still suffered from their bias instability with illumination [1-4]. Up to now, many researchers have studied the sub-gap density of states (DOS) as the root cause of instability. It is well known that defect states can influence on the performances and stabilities of a-IGZO TFTs. The defects states should be closely related with the deposition condition, including sputtering power, and pressure. Nevertheless, it has not been reported how these defects are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOIs) can be generated by electron attachment in oxygen atom near target surface and then accelerated up to few hundreds eV by a self-bias; at this time, the high energy bombardment of NOIs induce defects in oxide thin films. Recently, we have reported that the properties of IGZO thin films are strongly related with effects of NOIs which are generated during the sputtering process [5]. From our previous results, the electrical characteristics and the chemical bonding states of a-IGZO thin films were depended with the bombardment energy of NOIs. And also, we suggest that the deep sub-gap states in a-IGZO as well as thin film properties would be influenced by the bombardment of high energetic NOIs during the sputtering process.In this study, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process to prevent the NOIs bombardment effects and present how much to be improved the properties of a-IGZO thin film by this new deposition method. We deposited a-IGZO thin films by MFSS on SiO2/p-Si and glass substrate at various process conditions, after which we investigated the morphology, optical and electrical properties of the a-IGZO thin films.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.55-55
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• 2018

Recently, amorphous oxides such as InGaZnO (IGZO) and InZnO (IZO) as a channel layer of an oxide TFT have been attracted by advantages such as high mobility, good uniformity, and high transparency. In order to apply such an amorphous oxide TFTs to a display, the stability in various environments must be ensured. In the InGaZnO which has been studied in the past, Ga elements act as a suppressor of oxygen vacancy and result in a decreased mobility at the same time. Previous studies have been showed that the InZnO, which does not contain Ga, can achieve high mobility, but has relatively poor stability under various instability environments. In this study, the TFTs using $IZO/Al_2O_3$ double layer structure were studied. The introduction of an $Al_2O_3$ interlayer between source/drain and channel causes superior electrical characteristics and electrical stability as well as reduced contact resistance with optimally perfect ohmic contact. For the IZO and $Al_2O_3$ bilayer structures, the IZO 30nm IZO channels were prepared at $Ar:O_2=30:1$ by sputtering and the $Al_2O_3$ interlayer were depostied with various thickness by ALD at $150^{\circ}C$. The optimal sample exhibits considerably good TFT performance with $V_{th}$ of -3.3V and field effect mobility of $19.25cm^2/Vs$, and reduced $V_{th}$ shift under positive bias stress stability, compared to conventional IZO TFT. The enhanced TFT performances are closely related to the nice ohmic contact properties coming from the defect passivation of the IZO surface inducing charge traps, and we will provide the detail mechanism and model via electrical analysis and transmission line method.

• 신재생에너지
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• 제5권3호
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• pp.32-39
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• 2009

The Samcheonpo ocean small hydropower plant (SHP) has a special feature of using marginal hydraulic head of circulating water system of fossil fuel power plant as a power source and having the characteristics of general hydropower generation and tidal power generation as well. Also, it contributes to reducing green house gases and developing clean energy source by recycling circulating water energy otherwise dissipated into the ocean. The efficiency of small hydropower plant is directly affected by effective head and flow rate of discharged water. Therefore, the efficiency characteristics of ocean hydropower plant are analyzed with the variation of water level and flow rate of discharged water, which is based on the accumulated operation data of the Samcheonpo hydropower plant. After the start of small hydropower plant operation, definite rise of water level was observed. As a result of flow pattern change from free flow to submerged flow, the instability of water surface in overall open channel is increased but it doesn't reach the extent of overflowing channel or having an effect on circulation system. Performance evaluation result shows that the generating power and efficiency of small hydropower exceeds design requirements in all conditions. Analysis results of CWP's water flow rate verify that the amount of flowing water is measured less and the highest efficiency of small hydropower plant is achieved when the effective head has its maximum value. In conclusion, efficiency curve derived from water flow rate considering tidal level shows the best fitting result with design criteria curve and it is verified that overall efficiency of hydropower system is satisfactory.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.273.2-273.2
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• 2014

Sputtering process has been widely used in Si-based semiconductor industry and it is also an ideal method to deposit transparent oxide materials for thin-film transistors (TFTs). The oxide films grown at low temperature by conventional RF sputtering process are typically amorphous state with low density including a large number of defects such as dangling bonds and oxygen vacancies. Those play a crucial role in the electron conduction in transparent electrode, while those are the origin of instability of semiconducting channel in oxide TFTs due to electron trapping. Therefore, post treatments such as high temperature annealing process have been commonly progressed to obtain high reliability and good stability. In this work, the scheme of electron-assisted RF sputtering process for high quality transparent oxide films was suggested. Through the additional electron supply into the plasma during sputtering process, the working pressure could be kept below $5{\times}10-4Torr$. Therefore, both the mean free path and the mobility of sputtered atoms were increased and the well ordered and the highly dense microstructure could be obtained compared to those of conventional sputtering condition. In this work, the physical properties of transparent oxide films such as conducting indium tin oxide and semiconducting indium gallium zinc oxide films grown by electron-assisted sputtering process will be discussed in detail. Those films showed the high conductivity and the high mobility without additional post annealing process. In addition, oxide TFT characteristics based on IGZO channel and ITO electrode will be shown.

• 한국추진공학회지
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• 제17권3호
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• pp.47-55
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• 2013

본 연구에서는 곡관 채널에서의 비뉴튼 젤 추진제의 유동 특성에 대해 연구하였다. 물을 기본유체로 하는 모사젤을 Carbopol 941 젤화 작용제와 NaOH 농축액을 혼합하여 제작하였으며 입자 유무에 따른 유동 특성을 파악하기 위해 $Al_2O_3$ 나노 입자가 첨가된 젤을 제작하여 두 젤 추진제간의 유변학적 특성을 비교하였다. 두 모사젤에 대해 U-자형의 곡관부 위치별 유동특성과 Dean 와류(vortices)의 경향은 상이하였으나 나노 입자가 첨가된 모사젤 추진제의 경우 높은 컨시스턴시 지수에도 불구하고 두 모사젤 모두 비슷한 범위의 임계 Dean 수를 도출하였다. 나노 입자 첨가 유무와 무관하게 power-law 지수값이 임계 Dean 수를 결정하는데 주요 변수임을 판단할 수 있었으나 나노입자가 첨가된 젤의 경우 Dean 와류 강도의 변동폭이 상대적으로 크다는 결론을 내릴 수 있었다.