• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.1 no.1
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• pp.61-66
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• 2008

In this paper the effect of instability and chaos in optical fiber networks based on the Internet is described. Nonlinear optical fiber effect especially Brillouin scattering in networks has emerged as the essential means for the construction of active optical devices used for all-optic in-line switching, channel selection, amplification, oscillation in optical communications and a host of other applications. The inherent optical feedback by the back-scattered Stokes wave in optical networks also leads to instabilities in the form of optical chaos. This paradigm of optical chaos in fiber Internet serves as a test for fundamental study of chaos and its suppression and exploitation in practical application in optical fiber communication. This paper attempts to present a survey and some of our research findings on the nature of Brillouin chaotic effect on Internet based optical communication.

• 한국전산유체공학회:학술대회논문집
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• 1996.05a
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• pp.68-73
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• 1996

The full incompressible Navier-Stokes equations are numerically integrated to solve the unsteady channel flow using a new numerical scheme of second-order accuracy developed by the authors. It is well known that in spite of the symmetry in the boundary condition and geometry, asymmetry can develop with time-dependency in a channel with sudden expansion. The instability of the shear flow and the cross-channel pressure contribute to such asymmetric flow. In this paper, we successfully generated a channel flow in which vortex waves were propagated downstream due to the harmonically oscillating inlet flow. The structure of the eddies and wall vorticity are parametrically investigated.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1065-1070
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• 2007

The effects of hot carriers and self-heating on the electrical stability of p-channel TFTs have been analysed combining experimental data and numerical simulations. While hot carrier effects were shown not to induce appreciable degradation, self-heating related instability was found to more seriously affect the device characteristics. New models have been developed to explain the reported results.

• 한국전산유체공학회:학술대회논문집
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• 2008.03a
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• pp.118-124
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• 2008

The characteristics of heat transfer in a two-dimensional channel obstructed by a square rod is investigated by a turbulence model. The computation is made for the six cases of different rod positions between channel walls. To analyze the wall heat transfer, the heat flux of channel walls is set as a constant value and the $k-{\epsilon}-f_{\mu}$ model is employed. Downstream the square rod, the flow recirculation region appear and they are varied by the rod position. The enhancement of the turbulent heat transfer to the wall is induced by the flow instability using a square rod. The averaged heat transfer rate is maximized at a specific rod position. Finally, the effects of square rod on unsteady flows are scrutinized with the frequency analysis.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.20 no.9
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• pp.2965-2972
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• 1996

Transitional flow in an obstructed channel is investigated using numerical simulation. Two-dimensional thin obstacles are mounted symmetrically in the vertical direction and periodically in the streamwise direction. Flow separation occurs at the tip of the sharp obstacles. Depending on the Reynolds number, the flow undergoes Hopf bifurcation as the primary instability leading to a two-dimensional unsteady periodic solution. At higher Reynolds numbers, the unsteady solution exhibits a symmetry-breaking bifurcation which results in an unsteady asymmetric solution. The results are compared with experiments currently available, and show a good agreement.

• 한국가시화정보학회:학술대회논문집
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• 2003.11a
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• pp.75-78
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• 2003

An interfacial instability has recently been observed for the DC- and AC-powered electroosmotic flows of the two miscible electrolyte layers having different concentrations in microchannels. It is rather contrary to our common belief that the flow inside a microchannel is generally stable due to the dominant role of the viscous damping. In this work, we visualized the electroosmotic flow inside a T-channel to validate the numerical predictions. It is clearly shown that the strong vortices (which characterize the interface shapes) are generated at the interface of the two fluids, as was predicted in the numerical analysis.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2011.11a
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• pp.187-199
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• 2011

The main objective of this study was investigation of natural gas flames in a lean premixed swirl-stabilized dump combustor with an attention focused on the effect of the various fuel-air mixing section geometry on the combustion instability characteristics. The multi-channel dynamic pressure transducers were located on the combustor and inlet mixing section region to observe combustion pressure oscillation and difference phase at each dynamic pressure measurement results. Dynamic pressures were also measured to investigate characteristics of combustion at the same time. The combustor and mixing section length was varied in order to have different acoustic resonance characteristics from 800 to 1800 mm in combustor and 470, 550, 870 mm in mixing section. We observed two dominant instability frequencies in this study. Lower frequencies were obtained at lower equivalence ratio region and it was associated with a fundamental longitudinal mode of combustor length. Higher frequencies were observed in higher equivalence ratio conditions. It was related to secondary longitudinal mode of coupled with the combustor and mixing section. In this instability characteristics, pressure oscillation of mixing section part was larger than pressure oscillation of combustor. As a result, combustion instability was strongly affected by acoustic characteristics of combustor and mixing section geometry.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.466-468
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• 2012

Amorphous InGaZnO (${\alpha}$-IGZO) thin-film transistors (TFTs) are are very promising due to their potential use in thin film electronics and display drivers [1]. However, the stability of AOS-TFTs under the various stresses has been issued for the practical AOSs applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the ${\alpha}$-IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of ${\alpha}$-IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of ${\alpha}$-IGZO thin film. In this paper, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in ${\alpha}$-IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of ${\alpha}$-IGZO TFTs by this new deposition method.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.160-160
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• 2015

InGaZnO (IGZO) thin-film transistors (TFTs) are very promising due to their potential use in high performance display backplane [1]. However, the stability of IGZO TFTs under the various stresses has been issued for the practical IGZO applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of IGZO thin film. In this study, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of IGZO TFTs by this new deposition method.

• Transactions on Electrical and Electronic Materials
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• v.17 no.6
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• pp.380-382
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• 2016

The mechanism for instability under PBS (positive bias stress) in amorphous SIZO (Si-In-Zn-O) thin-film transistors was investigated by analyzing the charge trapping mechanism. It was found that the bulk traps in the SIZO channel layer and the channel/dielectric interfacial traps are not created during the PBS duration. This result suggests that charge trapping in gate dielectric, and/or in oxide semiconductor bulk, and/or at the channel/dielectric interface is a more dominant mechanism than the creation of defects in the SIZO-TFTs.