• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.367-380
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• 2013

In this paper, an analytical threshold voltage model is developed for a short-channel double-material-gate (DMG) strained-silicon (s-Si) on silicon-germanium ($Si_{1-X}Ge_X$) MOSFET structure. The proposed threshold voltage model is based on the so called virtual-cathode potential formulation. The virtual-cathode potential is taken as minimum channel potential along the transverse direction of the channel and is derived from two-dimensional (2D) potential distribution of channel region. The 2D channel potential is formulated by solving the 2D Poisson's equation with suitable boundary conditions in both the strained-Si layer and relaxed $Si_{1-X}Ge_X$ layer. The effects of a number of device parameters like the Ge mole fraction, Si film thickness and gate-length ratio have been considered on threshold voltage. Further, the drain induced barrier lowering (DIBL) has also been analyzed for gate-length ratio and amount of strain variations. The validity of the present 2D analytical model is verified with ATLAS$^{TM}$, a 2D device simulator from Silvaco Inc.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.4 s.175
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• pp.874-880
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• 2000

In this paper, a DC potential drop measurement system was used to find the position of the flaw on a simple thin plate. Four-point probe test was evaluated and used for this study. In the four-point probe test, the more distance between current pins provides the more measurable scope, the less voltage difference, and the more voltage difference rate. In the other hand, the more distance between voltage pins provides the less voltage difference and the less voltage difference rate. An optimized four-point probe was applied to measure the relation between voltage and the relative position of flaw to the probe. The Maxwell 21) simulator was used to analyze the electromagnetic field, and it showed that the analytical result was similar to the experimental result within 11.4% maximum error.

• Journal of Korean Society for Quality Management
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• v.36 no.2
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• pp.67-84
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• 2008

Given the industry's unprecedented attention and dedication of resources to voice recognition, this paper introduces and explores a novel idea generation technique whereby ideas are captured directly through verbalization rather than forcing group members to type ideas. A group simulator was used to measure the idea generation performance of individuals who input ideas verbally or via typing in the context of nominal and interacting groups. The results clearly indicate that verbal input represents a more desirable mechanism in a computer-mediated idea generation environment. Liberating group members from the keyboard produces remarkable performance gains. Verbalizing ideas helps individuals focus on analytical thinking and leverage group member ideas, ultimately facilitating the creation of ideas pools that are vastly superior in terms of quantity and quality. These effects were found across nominal and interacting groups. The implications of these results for future research and the design of technologies are discussed.

• Proceedings of the KIEE Conference
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• 2006.10d
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• pp.200-202
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• 2006

A impedance model simulating the electrical characteristics of the Electrodeless fluorescent lamp operated at high frequency is proposed. The model is constructed from a two parameter equation which is derived based on a set of two measurements. This is a readily constructed and computer simulator oriented model which is suitable for a preliminary design of electronic ballasts. Simulated and experimental results are used to verify the analytical discussions, and moreover, an electronic ballast design example using the proposed model is presented to further demonstrate ist applications.

• Journal of applied mathematics & informatics
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• v.28 no.1_2
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• pp.539-551
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• 2010

Low scalability and power efficiency of the shared bus in SoCs is a motivation to use on chip networks instead of traditional buses. In this paper we have modified the Orion power model to reach an analytical model to estimate the average message energy in K-Ary n-Cubes with focus on the number of virtual channels. Afterward by using the power model and also the performance model proposed in [11] the effect of number of virtual channels on Energy-Delay product have been analyzed. In addition a cycle accurate power and performance simulator have been implemented in VHDL to verify the results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.118-121
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• 1995

Fabrication and a new analytical expression for the capacitance characteristics of hydrogenerated amorphous silicon thin film transistors(a-Si:H TFTs) is presented and experimentally verified. The results show that the experimental capacitance characteristics are easily measeured. Measured transfer and DC output characteristic curves of a-Si:H TFT are similar to those of the standard MOSFET-IC. The capacitances on bias voltages are in good agreement with experimental data. This capacitance characteristics is suitable for incorporation into a circuit simulator and can be used for computer-aided design of a-Si thin film transistor integrated circuits.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.366-370
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• 2002

GaAs has become a very popular material for the fabrication of high frequency, low noise and microwave power devices. GaAs devices are also well suited for high temperature operation because of the large band gap of this material. The standard GaAs technology and device structures have to be modified for stable operation at high temperature. In this paper, AlGaAs/GaAs HBT considering stable ohmic contact at high temperature as well as thermal effect such as self-heating effect are introduced. All the data obtained study will be used as input data for the simulator and the result will be compared with an analytical model available in this study,

• Journal of Advanced Marine Engineering and Technology
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• v.22 no.5
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• pp.635-642
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• 1998

In automobile exhaust system. Internal pressure pulsation and shell vibration greatly affect the surface sound radiation. This noise is emitted from the muffler outer shell due to the pulsation of the exhaust gas pressure. This paper describes an analytical study of these characteristics as influenced by exhaust system structure. An exhaust simulator was used for generating the pressure pulsation. The relationship between shell vibration and radiated noise was used for generating the pressure pulsation. The relationship between shell vibration and radiated noise was identified by finding FRF.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.7
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• pp.1181-1186
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• 2008

A impedance model simulating the electrical characteristics of the External Electrode fluorescent lamp operated at high frequency is proposed. The model is constructed from a two parameter equation which is derived based on a set of two measurements. This is a readily constructed and computer simulator oriented model which is suitable for a preliminary design of electronic ballasts. Simulated and experimental results are used to verify the analytical discussions, and moreover, an electronic ballast design example using the proposed model is presented to further demonstrate its application.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.947-949
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• 2006

A impedance model simulating the electrical characteristics of the Electrodeless fluorescent lamp operated at high frequency is proposed. The model is constructed from a two parameter equation which is derived based on a set of two measurements. This is a readily constructed and computer simulator oriented model which is suitable for a preliminary design of electronic ballasts. Simulated and experimental results arc used to verify the analytical discussions, and, moreover, an electronic ballast design example using the proposed model is presented to further demonstrate its applications.