• Title/Summary/Keyword: analog memory

Search Result 133, Processing Time 0.017 seconds

Wide Range Analog Dual-Loop Delay-Locked Loop (광대역 아날로그 이중 루프 Delay-Locked Loop)

  • Lee, Seok-Ho;Kim, Sam-Dong;Hwang, In-Seok
    • Journal of the Institute of Electronics Engineers of Korea SC
    • /
    • v.44 no.1
    • /
    • pp.74-84
    • /
    • 2007
  • This paper presents a new dual-loop Delay Locked Loop(DLL) to expand the delay lock range of a conventional DLL. The proposed dual-loop DLL contains a Coarse_loop and a Fine_loop, and its operation utilizes one of the loops selected by comparing the initial time-difference among the reference clock and 2 internal clocks. The 2 internal clock signals are taken, respectively, at the midpoint and endpoint of a VCDL and thus are $180^{\circ}$ separated in phase. When the proposed DLL is out of the conventional lock range, the Coarse_loop is selected to push the DLL in the conventional lock range and then the Fine_loop is used to complete the locking process. Therefore, the proposed DLL is always stably locked in unless it is harmonically false-locked. Since the VCDL employed in the proposed DLL needs two control voltages to adjust the delay time, it uses TG-based inverters, instead of conventional, multi-stacked, current-starved inverters, to compose the delay line. The new VCDL provides a wider delay range than a conventional VCDL In overall, the proposed DLL demonstrates a more than 2 times wider lock range than a conventional DLL. The proposed DLL circuits have been designed, simulated and proved using 0.18um, 1.8V TSMC CMOS library and its operation frequency range is 100MHz${\sim}$1GHz. Finally, the maximum phase error of the DLL locked in at 1GHz is less than 11.2ps showing a high resolution and the simulated power consumption is 11.5mW.

A 15b 50MS/s CMOS Pipeline A/D Converter Based on Digital Code-Error Calibration (디지털 코드 오차 보정 기법을 사용한 15비트 50MS/s CMOS 파이프라인 A/D 변환기)

  • Yoo, Pil-Seon;Lee, Kyung-Hoon;Yoon, Kun-Yong;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.45 no.5
    • /
    • pp.1-11
    • /
    • 2008
  • This work proposes a 15b 50MS/s CMOS pipeline ADC based on digital code-error calibration. The proposed ADC adopts a four-stage pipeline architecture to minimize power consumption and die area and employs a digital calibration technique in the front-end stage MDAC without any modification of critical analog circuits. The front-end MDAC code errors due to device mismatch are measured by un-calibrated back-end three stages and stored in memory. During normal conversion, the stored code errors are recalled for code-error calibration in the digital domain. The signal insensitive 3-D fully symmetric layout technique in three MDACs is employed to achieve a high matching accuracy and to measure the mismatch error of the front-end stage more exactly. The prototype ADC in a 0.18um CMOS process demonstrates a measured DNL and INL within 0.78LSB and 3.28LSB. The ADC, with an active die area of $4.2mm^2$, shows a maximum SNDR and SFDR of 67.2dB and 79.5dB, respectively, and a power consumption of 225mW at 2.5V and 50MS/s.

Design of eFuse OTP IP for Illumination Sensors Using Single Devices (Single Device를 사용한 조도센서용 eFuse OTP IP 설계)

  • Souad, Echikh;Jin, Hongzhou;Kim, DoHoon;Kwon, SoonWoo;Ha, PanBong;Kim, YoungHee
    • Journal of IKEEE
    • /
    • v.26 no.3
    • /
    • pp.422-429
    • /
    • 2022
  • A light sensor chip requires a small capacity eFuse (electrical fuse) OTP (One-Time Programmable) memory IP (Intellectual Property) to trim analog circuits or set initial values of digital registers. In this paper, 128-bit eFuse OTP IP is designed using only 3.3V MV (Medium Voltage) devices without using 1.8V LV (Low-Voltage) logic devices. The eFuse OTP IP designed with 3.3V single MOS devices can reduce a total process cost of three masks which are the gate oxide mask of a 1.8V LV device and the LDD implant masks of NMOS and PMOS. And since the 1.8V voltage regulator circuit is not required, the size of the illuminance sensor chip can be reduced. In addition, in order to reduce the number of package pins of the illumination sensor chip, the VPGM voltage, which is a program voltage, is applied through the VPGM pad during wafer test, and the VDD voltage is applied through the PMOS power switching circuit after packaging, so that the number of package pins can be reduced.