• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.324-326
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• 2004

We have obtained ultra-short pulses with a wavelength of 616 nm from a Distributed Feedback Dye Laser pumped by excimer laser. Using the second harmonic generation, we obtained ultra-short pulse at 308nm in ultraviolet region and also performed amplification in 3 stages of XeCl amplifiers.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.222-223
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• 2003

The optical gain characteristics of 1550nm traveling-wave semiconductor optical amplifiers are analyzed experimentally and theoretically. The result shows that there is an optimum active layer thickness for high saturation output power.

• Proceedings of the KIPE Conference
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• 2020.08a
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• pp.459-460
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• 2020

The design of a low distortion class E amplifier with a frequency of 6.78MHz for a wireless power transfer is presented. The amplifier with a differential out is designed to reduce the harmonics of the output current. The harmonic characteristics of various types of the class E amplifiers are compared through the simulation study.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.8
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• pp.802-807
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• 2014

In this paper, an accurate method to estimate the measurement uncertainty of a power amplifier was proposed. Because power amplifiers incorporate mismatch at the drain for the optimal performance, the general method is not enough to produce precise measurement uncertainty of the output power. In order to supplement this method, We suggest comprehensive power measurement uncertainty which is utilized by a complex reflection coefficient and measurement uncertainty of S-parameter which contain the mismatch at the drain on the power amplifier. After that, we compared it with real measurement results of the 10 watt power amplifier which operates on 3.7 GHz. As a result, suggested measurement uncertainty could obtain the uncertainty of output power near 10 times accurate in comparison with existing uncertainty calculation method.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.128-133
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• 2008

Phase-change random access memory (PRAM) chip cell phase of amorphous state is rapidly changed to crystal state above 160 Celsius degree within several seconds during Infrared (IR) reflow. Thus, on-board programming method is considered for PRAM chip programming. We demonstrated the functional 512Mb PRAM with 90nm technology using several novel core circuits, such as metal-2 line based global row decoding scheme, PN-diode cells based BL discharge (BLDIS) scheme, and PMOS switch based column decoding scheme. The reverse-state standby current of each PRAM cell is near 10 pA range. The total leak current of 512Mb PRAM chip in standby mode on discharging state can be more than 5 mA. Thus in the proposed BLDIS control, all bitlines (BLs) are in floating state in standby mode, then in active mode, the activated BLs are discharged to low level in the early timing of the active period by the short pulse BLDIS control timing operation. In the conventional sense amplifier, the simultaneous switching activation timing operation invokes the large coupling noise between the VSAREF node and the inner amplification nodes of the sense amplifiers. The coupling noise at VSAREF degrades the sensing voltage margin of the conventional sense amplifier. The merit of the proposed sense amplifier is almost removing the coupling noise at VSAREF from sharing with other sense amplifiers.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.43 no.5 s.311
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• pp.28-35
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• 2006

This paper presents a new 3.3-1 V synchronous buck DC/DC converter that employs CMOS operational transconductance amplifiers (OTAs) as circuit-building blocks. An error amplifier OTA in a PWM circuit is compensated for to improve temperature stability. The temperature coefficient of the transconductance gain of the compensated OTA is less than $150\;ppm/^{\circ}C\;over\;0-100^{\circ}C$. The HSPICE simulation results of the $0.3{\mu}m$ standard CMOS technology show that the efficiency of the proposed converter is as high as 80% in the load current range of 40-125 mA. These results show that the proposed converter is adequate for use in battery-operated systems.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.3
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• pp.276-282
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• 2015

Until recently, power amplifiers using LDMOS were Class-AB and Doherty type, and showed 55 % efficiency for narrowband of 60 MHz bandwidth. However, owing to the RRH application of base stations power amplifier module, a bandwidth expansion of at least 100 MHz and high efficiency power amplifiers of at least 60 % power efficiency are required. In this study, a Class-J power amplifier was designed by optimizing an output matching circuit so that the second harmonic load will contain a pure reactance element only and have broadband characteristics by using GaN HEMT. The measurements showed that a 45 W Class-J power amplifier with a power added efficiency of 60~75 % was achieved when continuous wave signals were input at 1.6~2.3 GHz, including W-CDMA application.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.2
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• pp.107-114
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• 2009

In this paper, high efficiency amplifier configuration is proposed using the reconfigurable power divider. In order to enhance average efficiency of linear power amplifiers for wireless communication, it is required to increase efficiency in low output power region. The proposed power divider operates in two modes, high power mode and low power mode, according to output power. In each mode, it allows impedance matches and low loss, which is made possible by employing two $\lambda/4$ coupled lines and two switches. The fabricated power divider shows the return loss ($S_{11}$) and insertion loss ($S_{21}$) of -16.49 dB and -0.83 dB, respectively, in low power mode. In high power mode, the measured return loss ($S_{11}$) and insertion loss ($S_{31}$) are -16.28 dB and -0.73 dB, respectively. This result successfully demonstrates the reconfigurability of the proposed power divider.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.5 s.108
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• pp.483-489
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• 2006

In this paper, new wideband lens amplifiers are proposed for C-band wireless communication service. In order to obtain the wideband property, all components of the proposed lens amplifiers are designed with balanced structure and wideband characteristics. Fat dipole antenna as the input and output antenna, balanced amplifier as amplifying components, and coplanar stripline(CPS) as the delay line fer the beam focusing are used fur composing the stable wideband lens amplifier. The $5{\times}5$ 2D lens amplifier has the characteristics that the absolute gain is 7.5 dB, the EIPG is 37.4 dB at 6 GHz, and the 3-dB gain bandwidth is 19.8 %.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.5 s.108
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• pp.408-415
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• 2006

This paper suggests an improved system-level model of RF power amplifiers(PAs) including memory effects, and validates the suggested model by analyzing the power spectral density of the output signal with a predistortion linearizer. The original three-box(Wiener-Hammerstein) model uses input and output filters to capture RF frequency response of PAs. The adjacent spectral regrowth that occurs in three-box model can be perfectly removed by Hammerstein structure predistorter. However, the predistorter based on Hammerstein structure achieves limited performance in real PA applications due to other memory effects except RF frequency response. The spectrum of the output signal can be predicted accurately using the suggested model that changes a memoryless block in a three-box model with a memory polynomial. The proposed model accurately predicts the output spectrum density of PA with Hammerstein structure predistorter with less than 2 dB errors over ${\pm}30$ MHz adjacent channel ranges for IEEE 802.11 g WLAN signal.