• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.4
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• pp.28-39
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• 2007

This paper presents a programmable RF DFT (Radio Frequency Design-for-Testability) circuit for low noise amplifiers. We have developed a new on-chip RF DFT circuit that measures RF parameters of low noise amplifier (LNA) using only DC measurements [1, 2]. This circuit is extremely useful for today's RFIC devices in a complete RF transceiver environment. The DFT circuit contains test amplifier with programmable capacitor banks and RF peak detectors. The test circuit utilizes output DC voltage measurements and these measured values are translated into the LNA specifications such as input impedance and gain using the mathematical equations. Our on-chip DFT circuit can be self programmed for 1.8GHz, 2.4GHz and 5.25GHz low noise amplifiers for GSM, Bluetooth and IEEE802.11g standards. The circuit is simple and inexpensive.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.1B
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• pp.8-14
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• 2000

This paper analyzes and accesses the gain of optically pumped surface-normal MQW optical amplifiers. The proposed amplifiers have the advantage of polarization independence, high coupling efficiency to and from optical fibers, and flexibility of operating wavelength. We analyzed the gain characteristics of 100 - 200-period MQWs and verified the dependence of a strained lattice and selective doping. Theoretical analysis of such MQWs showsa single-pass gain of 3 dB with broad operation bandwidth. A single-pass gain of 2.6 dB is obtained experimentally in an InGaAs/InGaAlAs MQW amplifier, which is compared with calculations. The use of Fabry-Perot interferometer (FPI) structure in an optical amplifier is a useful way to increase the gain, but causes a problem of narrow operation bandwidth when the single-pass gain is low. Therefore, a single-pass gain above 2to 3 dB is a prerequisite to achieve both a high gain and moderate operation bandwidth in FPI-structured opticalamplifiers. We have designed an FPI-structured surface-normal optical amplifier both with a high gain of broad operation bandwidth of 4.6mm, when a single-pass gain is 3 dB.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.2 no.2
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• pp.249-258
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• 1998

In land mobile communication, very extensive studies on pilot symbol assisted modulation (PSAM) have been made on fading compensation. This paper analyzes the effect of power amplifier nonlinearity on PSA-QAM with maximal ratio combining space diversity. In practical PSAM, information on fading is obtained through interpolation of the pilot symbols. We employed the interpolation filter which could minimize the average power of error and analyzed effects on the system performance of the number of filter taps, period of the pilot symbol frame, and the Doppler frequency. Nonlinear power amplifiers of class AB, B, and C were incorporated in the system models and their AM/AM and AM/PM characteristics were taken into account in the performance analysis. We showed the performance variations according to the types of the nonlinear power amplifiers in the AWGN and Rayleigh fading channels using nonlinear compensation technique, Cartesian Feedback Loop (CFB).

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.53-64
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• 2021

As the 5G service market is expected to grow rapidly, the development of high-power, high-efficiency power amplifiers for the 5G communication infrastructure is indispensable. Gallium nitride (GaN) is attracting great interest as a key device in power devices and integrated circuits due to its wide bandgap, high carrier concentration, high electron mobility, and high-power saturation characteristics. In this study, we investigate the technology trends of Ka-band GaN radio frequency (RF) power devices and integrated circuits for operation in the millimeter-wave band of recent 5G mobile communication services. We review the characteristics of GaN RF high electron mobility transistor (HEMT) devices to implement power amplifiers operating at frequencies around 28 GHz and compare the technology of foreign companies with the device characteristics currently developed by the Electronics and Telecommunication Research Institute (ETRI). In addition, the characteristics of Ka-band GaN monolithic microwave integrated circuit (MMIC) power amplifiers manufactured using various GaN HEMT device technologies are reviewed by comparing characteristics such as frequency band, output power, and output power density of integrated circuits. In addition, by comparing the performance of the power amplifier developed by ETRI, the current status and future direction of domestic GaN power devices and integrated circuit technology will be discussed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.3
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• pp.432-438
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• 2001

In this paper, after applying Defected Ground Structure(DGS) to DC block, changes of gap and length of λ/4 coupled line are investigated by EM simulation and fabrication. As a result, on condition of the same output with the case using typical DC block, the gap between λ/4 coupled line is widen from 0.1 mm to 0.46 mm by 0.36 mm and the length of λ/4 coupled line gets shorter from 17.7 mm to 13.2 mm by 4.5 mm. Also three type power amplifiers using blocking capacitor, typical DC block and DGS DC block are fabricated and investigated. At first, when S parameter characteristics of each amplifier are considered at frequency band of 3.2 +-0.O5 GHz, every amplifier has similar characteristics of gain and S parameter. Second when the output power of amplifiers is 25 dBm after putting CW signal of 3.2 GHz into three type amplifiers, the difference of dominant signal and 2nd harmonic signal using blocking capacitor, typical DC block and DGS DC block is each -44.83 dBc, -66.84 dBc and -64.33 dBc. Therefore harmonic characteristics of amplifiers using typical DC block and DGS DC block is almost same.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.995-997
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• 1998

The experimental optical cross-connect based on delivery and coupling switch features all-optical property. It consists of erbium-doped fiber amplifiers, arrayedwaveguide gratings, optical switches and optical combiners. In 4 channel wavelength division multiplexing with 1.6 nm spacing, the difference in power level among channels for output signals from the optical cross-connect was within 2 dB.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.663-666
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• 1998

A triangular/square waveforms generator with current controllable frequency is described. The genertor utilizes operational transconductance amplifiers as switching elements. The circuit built with commercially available components exhibits good linearity of current to frequency and relatively low temperature sensitivity.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2004.07a
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• pp.332-332
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• 2004

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.224.1-224
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• 2003

• Proceedings of the IEEK Conference
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• 2001.06e
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• pp.177-180
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• 2001

A saw-tooth waveform generator with current-controllable frequency is described. The generator utilizes operational transconductance amplifiers as switching element. It features simple and wide sweep capability. The circuit built with commercially avaliable components exhibits good linearity of current to frequency and relatively low temperature sensitivity.