• 한국전자파학회지:전자파기술
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• 제2권2호
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• pp.3-10
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• 1991

GaAs FET초고주파 증폭기의 DC 블럭용으로 사용되는 칩 커페시터 대신 DC블럭 및 임피던스 변환 성질을 가진 DC block/transformer(비대칭 2선 마이크로스트립 선로 및 까지낀 3선 마이크로스트립 선로)를 사용한 초고주파 증폭기의 새로운 구성 방법을 제시하였다. 새로운 구성을 갖는 초고주파 증폭기의 대역 특성은 평탄하며 대역폭이 3.5(BHz)인 광대역 특성을 얻으 수 있었다. 초고주파 증폭기에 사용된 깍지낀 3선 마이크로스트리 결합 선로는 DC블럭 기능과 함께 임피던스 정합 역할을 할 수 있는 큰 장점을 가지고 있다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.675-678
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• 1998

In this paper, power amplifiers for PCS phone were designed with the GEC Marconi H40 HEMT libray. The 1st stage was carefully designed in order to obtain k〉1 using a parallel resistor, and its S21 gain of 18.3dB and input reflection coefficient of -4dB were obtained. And S21 gain of 18dB and input reflection coefficient of -7dB were obtained from the 2nd stage. Finally, total S21 gain of 38dB, input reflection coefficient of -16dB, power gain of 35.2dB, output power of 28.7dBm and PAE(power added efficiency) of 29% were obtained from the designed MMIC power amplifiers. The chip size is $1.729$\times$0.94\textrm{mm}^2.$

• 한국광학회:학술대회논문집
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• 한국광학회 1990년도 제5회 파동 및 레이저 학술발표회 5th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.59-63
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• 1990

Two-stage TEA(transversely excited atmospheric pressure) CO2 laser amplifier system, Amp I and Amp II are consturcted and their amplification characteristics are investigated theoretically and experimentally. Multiple-wire corona preionization method is used for uniform discharge in laser oscillator and amplifiers. At optimumm gas ratio, CO2 : N2 : He = 1 : 1 : 3, output pulse energy of the oscillator is 0.4J and finally two-stage amplification gives 1.5J output energy which is larger than pumping threshold of para-H2 Raman laser. The rate equations of the amplifiers are solved numerically, and the results are compared with the experimental results. In conclusion, the small signal gain cocfficient of AMP I is 0.025/cm and that of AMP II is 0.02/cm.

• Journal of electromagnetic engineering and science
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• 제3권1호
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• pp.12-16
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• 2003

In this paper, low noise amplifiers with coplanar waveguide structure are presented for Wireless LAN data communication application. For comparison of microwave performance, LNAs of cascode type and balanced type using cascode cell with the same substrate and same bias conditions are designed and implemented. A cascode type of LNA shows the gain of 12.45 ㏈, input return loss of 11.63 ㏈, and noise figure of 1.52㏈. A balanced type of LNA using cascode cell shows the gain of 6.58 ㏈, input return loss of 16.6 ㏈, and noise figure of 1.18 ㏈.

• ETRI Journal
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• 제26권4호
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• pp.344-350
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• 2004

We propose a filter-free wavelength conversion using a Mach-Zehnder interferometer with monolithically integrated $2{\times}2$ multimode interference semiconductor optical amplifiers (MMI-SOAs). The device has been optimized by considering a non-homogeneous carrier distribution due to the self-imaging properties of the MMI-SOA. Static measurements show an extinction ratio of up to 18 dB and an input signal rejection ratio of up to 20 dB.

• 한국광학회지
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• 제9권3호
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• pp.181-185
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• 1998

에르븀 첨가 광섬유 증폭기(EDFA)를 제작하여 장거리 전송 시의 이득, 신호대 잡음비와 대역을 측정하였다. 이득 \ulcorner탄화 되지 않은 EDFA를 recirculating loop에 넣어 장거리 전송 실험을 한 결과 EDFA 20회 통과시에는 3dB 이득 변화를 보이는 대역이 6nm이다. 반면에 이득 평탄화 된 EDFA는 1dB 이득 대역이 22nm 이며, EDFA 100회 통과시에 9nm대역이 5dB 이내에 들게 되어 여러 파장을 동시에 초장거리 전송 할 수 있음을 확인하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.417-418
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• 2008

A quadrature voltage controlled oscillator(QVCO) with MOS-varactors has been fabricated for X-band applications. The QVCO consists of two cross -coupled differential cores and buffer amplifiers, which has fabricated in TSMC $0.18{\mu}m$ CMOS process. The QVCO exhibits a frequency tuning range from 8.38 GHz to 10.62 GHz. The phase noise is -88 dBc/Hz at 1 MHz-offset frequency. The total bias current is 25 mA including four buffer amplifiers.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -2
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• pp.751-754
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• 2002

This paper introduces a way to realize biquadratic transfer functions using Operational Amplifiers (OAs) and Operational Transconductance Amplifiers (OTAs). The basic circuit configuration is constructed with two OAs and five OTAs. It is shown that low-pass, band-pass, high-pass, band-stop and all-pass transfer functions can be realized by suitably choosing the input terminals. And the circuit parameters can also be set by the transconductance gains of the OTAs independently. An example is given together with simulated results by PSPICE.

• 전자공학회논문지A
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• 제29A권2호
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• pp.18-23
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• 1992

Recently, SSPAs(Solid-State Power Amplifiers) with high linearity and efficiency replace TWTAs (Traveling-Wave-Tube Amplifiers) in satellite transponders. In this paper, a power amplifier with maximum output power is designed and constructed using GaAs FET(MGF-1302) as a test model for the development of SSPAs. For conjugate matching of input and output network, transimission lines and stubs are optimized using microwave CAD program, LINMIC+. Power amplifier is realized on the teflon substrate($\in$S1rT=2.45) with a bandwidth of 1GHz at a center frequency of 8GHz. Maximum stable gain of simulation and simulation and experimental result is obtained 9.23, 7.65 dB, respectively.

• 전자공학회논문지A
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• 제32A권1호
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• pp.119-128
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• 1995

We report hybrid and passive mode-locking results of tilted-stripe AlGaAs semiconductor laser traveling wave amplifiers with saturable absorbers. Dependence ofthe pulse width on the mode locking frequency, the bandwidth of spectral filters, and the bias current of the laser amplifier are investigated. We generate 4 ps optical pulses by using the hybrid mode locking technique. The repetition rate and the peak power of generated pulses are 516 MHz and 170 mW, respectively. The tuning range of uor mode locked laser is 10 nm with the center wavelength of 780 nm. We also generate 2.6 ps optical pulses with peak power of 830 mW by using the passive mode locking technique.