• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.2 no.2
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• pp.3-10
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• 1991

The new structure method of GaAs microwave amplifiers using DC block function and impedance transforming property of DC block/transformer(non-symmetrical two - microstrip coupled line and interdigital three - microstrip coupled line), instead of chip capacitor, is presented. The newly structured microwave amplifier showed wideband characteristics(bandwidth, 3.5 GHz) and flat frequency response. Interdigital three - microstrip coupled line which is used for microwave amplifier can be used to match amplifiers as well as DC blocking.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.675-678
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• 1998

In this paper, power amplifiers for PCS phone were designed with the GEC Marconi H40 HEMT libray. The 1st stage was carefully designed in order to obtain k〉1 using a parallel resistor, and its S21 gain of 18.3dB and input reflection coefficient of -4dB were obtained. And S21 gain of 18dB and input reflection coefficient of -7dB were obtained from the 2nd stage. Finally, total S21 gain of 38dB, input reflection coefficient of -16dB, power gain of 35.2dB, output power of 28.7dBm and PAE(power added efficiency) of 29% were obtained from the designed MMIC power amplifiers. The chip size is $1.729$\times$0.94\textrm{mm}^2.$

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.59-63
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• 1990

Two-stage TEA(transversely excited atmospheric pressure) CO2 laser amplifier system, Amp I and Amp II are consturcted and their amplification characteristics are investigated theoretically and experimentally. Multiple-wire corona preionization method is used for uniform discharge in laser oscillator and amplifiers. At optimumm gas ratio, CO2 : N2 : He = 1 : 1 : 3, output pulse energy of the oscillator is 0.4J and finally two-stage amplification gives 1.5J output energy which is larger than pumping threshold of para-H2 Raman laser. The rate equations of the amplifiers are solved numerically, and the results are compared with the experimental results. In conclusion, the small signal gain cocfficient of AMP I is 0.025/cm and that of AMP II is 0.02/cm.

• Journal of electromagnetic engineering and science
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• v.3 no.1
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• pp.12-16
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• 2003

In this paper, low noise amplifiers with coplanar waveguide structure are presented for Wireless LAN data communication application. For comparison of microwave performance, LNAs of cascode type and balanced type using cascode cell with the same substrate and same bias conditions are designed and implemented. A cascode type of LNA shows the gain of 12.45 ㏈, input return loss of 11.63 ㏈, and noise figure of 1.52㏈. A balanced type of LNA using cascode cell shows the gain of 6.58 ㏈, input return loss of 16.6 ㏈, and noise figure of 1.18 ㏈.

• ETRI Journal
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• v.26 no.4
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• pp.344-350
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• 2004

We propose a filter-free wavelength conversion using a Mach-Zehnder interferometer with monolithically integrated $2{\times}2$ multimode interference semiconductor optical amplifiers (MMI-SOAs). The device has been optimized by considering a non-homogeneous carrier distribution due to the self-imaging properties of the MMI-SOA. Static measurements show an extinction ratio of up to 18 dB and an input signal rejection ratio of up to 20 dB.

• Korean Journal of Optics and Photonics
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• v.9 no.3
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• pp.181-185
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• 1998

Gain characteristic of concatenated erbium-doped fiber amplifiers(EDFA) are studied with a recirculating EDFA loop. For a non-flat gain EDFA, the 3 dB gain bandwidth was reduced to 6 nm after the 20th EDFA. However, for an optimized gain flattened EDFA, in a simple configuration, the 5 dB gain bandwidth was found to be 9nm, even after the 100th EDFA, corresponding to 8000km transmission. This results suggest that the simple optimized flat gain amplifier could be a good candidate for ultra-long distance wavelength division multiplexed transmissions.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.417-418
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• 2008

A quadrature voltage controlled oscillator(QVCO) with MOS-varactors has been fabricated for X-band applications. The QVCO consists of two cross -coupled differential cores and buffer amplifiers, which has fabricated in TSMC $0.18{\mu}m$ CMOS process. The QVCO exhibits a frequency tuning range from 8.38 GHz to 10.62 GHz. The phase noise is -88 dBc/Hz at 1 MHz-offset frequency. The total bias current is 25 mA including four buffer amplifiers.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.751-754
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• 2002

This paper introduces a way to realize biquadratic transfer functions using Operational Amplifiers (OAs) and Operational Transconductance Amplifiers (OTAs). The basic circuit configuration is constructed with two OAs and five OTAs. It is shown that low-pass, band-pass, high-pass, band-stop and all-pass transfer functions can be realized by suitably choosing the input terminals. And the circuit parameters can also be set by the transconductance gains of the OTAs independently. An example is given together with simulated results by PSPICE.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.2
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• pp.18-23
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• 1992

Recently, SSPAs(Solid-State Power Amplifiers) with high linearity and efficiency replace TWTAs (Traveling-Wave-Tube Amplifiers) in satellite transponders. In this paper, a power amplifier with maximum output power is designed and constructed using GaAs FET(MGF-1302) as a test model for the development of SSPAs. For conjugate matching of input and output network, transimission lines and stubs are optimized using microwave CAD program, LINMIC+. Power amplifier is realized on the teflon substrate($\in$S1rT=2.45) with a bandwidth of 1GHz at a center frequency of 8GHz. Maximum stable gain of simulation and simulation and experimental result is obtained 9.23, 7.65 dB, respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.119-128
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• 1995

We report hybrid and passive mode-locking results of tilted-stripe AlGaAs semiconductor laser traveling wave amplifiers with saturable absorbers. Dependence ofthe pulse width on the mode locking frequency, the bandwidth of spectral filters, and the bias current of the laser amplifier are investigated. We generate 4 ps optical pulses by using the hybrid mode locking technique. The repetition rate and the peak power of generated pulses are 516 MHz and 170 mW, respectively. The tuning range of uor mode locked laser is 10 nm with the center wavelength of 780 nm. We also generate 2.6 ps optical pulses with peak power of 830 mW by using the passive mode locking technique.