• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.150-150
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• 2010

Carbon nanotubes have drawn attention as one of the most promising emitter materials ever known not only due to their nanometer-scale radius of curvature at tip and extremely high aspect ratios but also due to their strong mechanical strength, excellent thermal conductivity, good chemical stability, etc. Some applications of CNTs as emitters, such as X-ray tubes and microwave amplifiers, require high current emission over a small emitter area. The field emission for high current density often damages CNT emitters by Joule heating, field evaporation, or electrostatic interaction. In order to endure the high current density emission, CNT emitters should be optimally fabricated in terms of material properties and morphological aspects: highly crystalline CNT materials, low gas emission during electron emission in vacuum, optimal emitter distribution density, optimal aspect ratio of emitters, uniform emitter height, strong emitter adhesion onto a substrate, etc. We attempted a novel approach to fabricate CNT emitters to meet some of requirements described above, including highly crystalline CNT materials, low gas emission, and strong emitter adhesion. In this study, CNT emitters were fabricated by filtrating an aqueous suspension of highly crystalline thin multiwalled CNTs (Hanwha Nanotech Inc.) through a metal mesh. The metal mesh served as a support and fixture frame of CNT emitters. When 5 ml of the CNT suspension was engaged in filtration through a 400 mesh, the CNT layers were formed to be as thick as the mesh at the mesh openings. The CNT emitter sample of $1{\times}1\;cm^2$ in size was characteristic of the turn-on electrical field of 2.7 V/${\mu}m$ and the current density of 14.5 mA at 5.8 V/${\mu}m$ without noticeable deterioration of emitters. This study seems to provide a novel fabrication route to simply produce small-size CNT emitters for high current emission with reliability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.353-353
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• 2008

Carbon nanotubes (CNTs) are attractive for field emitter because of their outstanding electrical, mechanical, and chemical properties. Several applications using CNTs as field emitters have been demonstrated such as field emission display (FED), backlight unit (BLU), and X-ray source. In this study, we fabricated a CNT cathode using transparent ultra-thin CNT film. First, CNT aqueous solution was prepared by ultrasonically dispersing purified single-walled carbon nanotubes (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). To obtain the CNT film, the CNT solution in a milliliter or even several tens of micro-litters was deposited onto a porous alumina membrane through vacuum filtration process. Thereafter, the alumina membrane was solvated by the 3 M NaOH solution and the floating CNT film was easily transferred to an indium-tin-oxide (ITO) glass substrate of $0.5\times0.5cm^2$ with a film mask. The transmittance of as-prepared ultra-thin CNT films measured by UV-Vis spectrophotometer was 68~97%, depending on the amount of CNTs dispersed in an aqueous solution. Roller activation, which is a essential process to improve the field emission characteristics of CNT films, increased the UV-Vis transmittance up to 93~98%. This study presents SEM morphology of CNT emitters and their field emission properties according to the concentration of CNTs in an aqueous solutions. Since the ultra-thin CNT emitters prepared from the solutions show a high peak current density of field emission comparable to that of the paste-base CNT emitters and do not contain outgassing sources such as organic binders, they are considered to be very promising for small-size-but-high-end applications including X-ray sources and microwave power amplifiers.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.194-200
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• 2012

In this paper, we proposed a SPICE model of high-voltage insulated gate bipolar transistor(IGBT). The proposed model consists of two sub-devices, a MOSFET and a BJT. Basic I-V characteristics and their temperature dependency were realized by adjusting various parameters of the MOSFET and the BJT. To model nonlinear parasitic capacitances such as a reverse-transfer capacitance, multiple junction diodes, ideal voltage and current amplifiers, a voltage-controlled resistor, and passive devices were added in the model. The accuracy of the proposed model was verified by comparing the simulation results with the experimental results of a 1200V trench gate IGBT.

• Journal of IKEEE
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• v.14 no.3
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• pp.232-235
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• 2010

A 60GHz active phase shifter with 65nm CMOS is presented by replacing passive switches in switched-line type phase shifter with active ones. Active-switch phase shifter is composed of active-switch blocks and passive delay network blocks. The active-switch phase shifter design is compact compare with the conventional vector-sum phase shifter. Active-switch blocks are designed to accomplish required input and output impedances whose requirements are different whether the switch is on or off. And passive delay network blocks are composed of lumped L,C instead of normal microstrip line to reduce the size of the circuit. An 1-bit phase shifter is fabricated by TSMC 65nm CMOS technology and measurement results present -4dB average insertion loss and 120 degree phase shift at 65GHz.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.8 s.350
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• pp.91-96
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• 2006

High efficiency switching mode circuits such as class I amplifiers have been well known in the MHz frequency range. The class E amplifier is a type of switching mode amplifier offering very high efficiency approaching 100%. In this paper, the class E amplifier has been designed by using the harmonic balance method of circuit simulator. The designed amplifier is realized by using pHEMT and microstrip line, shows 66% power added efficiency (PAE) at 2.4GHz with 17.6dBm output power. With -3dBm input power of wireless LAN, measured output spec01m can meet the required IEEE 802.11g standard spectrum mask. That means the required amplifier back off of 9dB from $P_{ldB}$ to satisfy the required wireless LAN spectrum mask.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.7
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• pp.705-711
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• 2003

In this Paper, 2${\times}$100 $\mu\textrm{m}$ AlCaN/GaN HEMT's(on sapphire substrate) large signal model including thermal effect was extracted. An equation based empirical model was employed to make large signal model for convergence and high speed. Pulsed I-V measurement was performed to extract thermal resistance and capacitance. Power amplifiers with 9 mm and 15 mm AlCaN/GaN HEMTS were designed using scaled modeling results of 2${\times}$100 $\mu\textrm{m}$ device respectively. From comparisons between measured and simulated data, the model considering of thermal effects gave better agreement than without one. It demonstrates that thermal modeling must be performed for power amplifier that uses large size transistors.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.7 no.1
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• pp.53-60
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• 1996

The 8W hybrid MIC SSPA has been developed in the frequency range from 14.0 GHz to 14.5 GHz for uplink of KOREASAT's earth station. The whole system was designed of two parts with driving amplifier and high power amplifier to simplify the fabrication process. we reduced weight and volum of power amplifier through arranging the bias circuits in the same housing. The realized SSPA has a small signal gain of $26\pm1dB$within 500 MHz bandwidith, and the input and output return losses are over 7dB and 12dB respectively. The output power of 39.0 ~ 39.2dBm is achieved at the 1dB gain compression point of 14 GHz, 14.25 GHz, and 14.5 GHz. That reveals higher power than 8W of design target. The proposed SSPA manufacture techni- ques in this paper can be applied to the implementation of power amplifiers for some radars and SCPC.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.8 no.2
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• pp.75-82
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• 2009

This paper proposes a method which increases the linearity using an improvement mechanism of Doherty power amplifier and compensates the decrement of efficiency due to improvement of linearity. To verify the method, a 20W power amplifier is designed and implemented. Compared with 2-way Doherty power amplifier, the implemented 3-way Doherty power amplifier with class F shows improved linearity about 10dBc and efficiency about 1.5%. Also, efficiency characteristic has been improved about 3.5% compared with the 2-way Doherty power amplifier while maintaining linearity. This results show that the proposed 3-way Doherty power amplifier with class F is shown to be adequate for improvement of efficiency and linearity. It is expected that the proposed amplifier can be used for various wireless communication system amplifiers.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.3 s.333
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• pp.1-8
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• 2005

In this paper, design and implement 60W Doherty power amplifiers for 3GPP repeater and base station transceiver system. Efficiency improvement and high power property of Doherty power amplifier is distinguishable; however implementation of assistance amplifer is difficult, though. To solve the problem, therefore, GCHD (Gate Control Hybrid Doherty) power amplifier is embodied to gate bias adjusament circuit of assistance amplifier to General Doherty power amplifier. Experiment result shows that $2.11\~2.17GHz$, 3GPP operating frequency band, with 62.55 dB gain, PEP output is 50,76 dBm, W-CDMA average power is 47.81 dBm, and -40.05 dBc ACLR characteristic in 5MHz offset frequency band. Each of the parameter satisfied amplifier specification which we want to design. Especially, GCHD power amplifier shows proper efficiency performance improvement in uniformity ACLR than general power amplifier.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.36S no.11
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• pp.15-21
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• 1999

The scalability of optical cross-connect nodes is analyzed based on the limiting factor of transmission performance. The limiting factors considered are ASE noise accumulation and gain saturation in the optical amplifiers, and crosstalk in both wavelength multiplexers/demultiplexers and optical switches. When the wavelength multiplexer/demultiplexers crosstalk is lower than 25dB, Power Penalty is below 1dB for the cascaded transmission of 10 nodes with 4 input/output ports. When 10Gbps signals are transmitted through nodes with 4 and 16 input/output Ports, performance degradation due to switch crosstalk is dominant compared to that due to ASE noise accumulation if the switch crosstalk is larger than 30dB and 45dB, respectively. For the single stage transmission of 10Gbps signal with 21dB fiber link loss, the maximum loss of optical cross-connect nodes must be under 34dB to achieve the BER of $10^{-12}$.