• 한국광학회:학술대회논문집
• /
• 한국광학회 2009년도 창립 20주년기념 특별학술발표회
• /
• pp.66-67
• /
• 2009

• Bulletin of the Korean Chemical Society
• /
• 제31권4호
• /
• pp.989-998
• /
• 2010

The titled dye of DBPI gives amplified spontaneous emission (ASE) with maximum at 580 nm upon pumping by nitrogen laser (${\lambda}_{ex}\;=\;337.1\;nm$). The ground state absorption cross section (${\sigma}_A$) and emission cross section (${\sigma}_E$) as well as effective emission cross section(${\sigma}^*_E$) have been determined. The electronic absorption spectra of DBPI were measured in ethanol and tetrahydrofuran at room and low temperature. DBPI displays molecular aggregation in water. The photochemical reactivity of DBPI was also studied in carbon tetrachloride upon irradiation with 525 nm light. The electrochemical investigation of DBPI dye has been carried out using cyclic voltammetry and convolution deconvolution voltammetry combined with digital simulation technique at a platinum electrode in 0.1 mol/L tetrabutyl ammonium perchlorate (TBAP) in two different solvents acetonitrile ($CH_3CN$) and dimethylformamide (DMF). The species were reduced via consumption of two sequential electrons to form radical anion and dianion (EE mechanism). In switching the potential to positive direction, the compound was oxidized by loss of two sequential electrons, which were followed by a fast dimerization and/or aggregation process i.e $EC_{dim1}EC_{dim2}$ mechanism. The electrode reaction pathway and the chemical and electrochemical parameters of the investigated compound were determined using cyclic and convolutive voltammetry. The extracted electrochemical parameters were verified and confirmed via digital simulation method.

• 한국광학회:학술대회논문집
• /
• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
• /
• pp.5-6
• /
• 1989

The overall design of the optical isolator system is prepared for the 1 TW Nd pulse laser. Two pockels cell optical switches are employed to suppress the amplified spontaneous emission and the backward reflection. The role of two Farady rotators is to protect the laser system from the light amplified after back reflection. One saturable absorber dye and one liquid crystal polarizer/isolator will also serve as optical isolator.

• 한국광학회:학술대회논문집
• /
• 한국광학회 2007년도 하계학술발표회 논문집
• /
• pp.41-42
• /
• 2007

• 한국광학회지
• /
• 제23권6호
• /
• pp.264-268
• /
• 2012

본 논문에서는 파장분할 다중방식의 수동형 광 가입자망(WDM-PON: Wavelength Division Multiplexing - Passive Optical Network)에서 매우 구조가 간단하고 저비용으로 구현 가능한 방송신호 전송 방법을 제안한다. 이는 하나의 광대역 증폭된 자발 광원(Amplified Spontaneous Emission: ASE)과 편광 독립 반사형 반도체 광 증폭기(Polarization Independent-Reflective Semiconductor Optical Amplifier: PI-RSOA) 만으로 구현이 가능하기 때문이다. 채널당 1.25 Gb/s 속도에서 24개의 가입자 채널에 대해 30 Km 이상의 방송 신호 전송 시, 무오류(error-free) 성능을 갖는 것을 실험적으로 증명하였다.

• 한국광학회:학술대회논문집
• /
• 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
• /
• pp.96-97
• /
• 2000

Incoherent broadband optical sources have been applied in various areas such as a light source for optical device characterization, fiber-optic gyroscopes$^{(1)}$ , and spectrum sliced light source in wavelength division multiplexing (WDM) system$^{(2)}$ . To utilize the inherent low loss in silica optical fibers, various types of incoherent light sources are being developed. Among the light sources, the amplified spontaneous emission (ASE) from a rare earth doped fiber has benefits in temperature stability, high output power, low polarization dependence over semiconductor diodes$^{(3)}$ . Recently erbium doped fibers (EDF) have been intensively researched for ASE sources as well as optical amplifiers$^{(4)}$ . The spectrum of ASE from an EDF, however, is limited in the 1520~1560 nm range in conventional configurations. In this letter we described a new broadband ASE source which included both the conventional ASE band of Er$^{3+}$ ion, 1520nm~1560nm and ASE band from Tm$^{3+}$ ions that extends the bandwidth further. For the first time, to the best knowledge of authors, a fiber ASE source based on the energy transfer between Er$^{3+}$ and Tm$^{3+}$ ions in the range of 1460~1550 nm, has been demonstrated using a single 980nm pump laser diode. (omitted)omitted)

• Journal of the Optical Society of Korea
• /
• 제19권5호
• /
• pp.437-443
• /
• 2015

In this paper, we analyze the performance of the all-optical multihop radio over a free space optical (RoFSO) communication system with amplify-and-forward (AF) relays under varying weather conditions. The proposed channel model considers the propagation loss, attenuation and atmospheric fading modeled by the Gamma-Gamma (GG) distribution. Both the amplified spontaneous emission (ASE) noise in the all-optical relays and the background noise projected onto receiver apertures have been considered in the analysis. The lower bound analytical expressions for the end-to-end bit error rate (BER) and outage probability are derived for the multihop system employing the all-optical relays with the full channel state information (CSI). Meanwhile, the exact results for BER and outage probability are obtained via Monte Carlo simulation. Results indicate the performance of the proposed system will be improved by the multihop transmission technology. For a fixed number of relays, the BER and outage probability will be increased with the deterioration of the weather conditions.

• 한국통신학회논문지
• /
• 제25권9B호
• /
• pp.1518-1526
• /
• 2000

본 논문은 기존 표준 단일모드 광섬유 링크를 통하여 초고속 광신호의 장거리 전송이 가능하도록 분산보상 광섬유를 이용한 최적 분산보상 기법에 기반을 둔 전송링크 설계 방법을 제안하였다. 제안한 방법에서는 광섬유의 비선형성에서 비롯되는 자기위상변조(Self-Phase Modulation: SPM)와 광증폭기에서 발생하는 증폭자연방출(Amplified Spontaneous Emission : ASE) 잡음에 대하여 증폭기간 거리와 중계기간 거리를 최적화함으로써 전송신호 속도에 따른 최대 전송거리를 제시하였다. 또한 주어진 증폭기간 거리와 중계기간 거리에 대하여 ASE 잡음과 SPM의 효과의 균형적 관계로부터 최적의 입력 신호전력의 범위가 있음을 제시하였다.

• Current Applied Physics
• /
• 제18권11호
• /
• pp.1381-1387
• /
• 2018

One dimensional (1D) grating has been fabricated (using focused ion beam) on 50 nm gold (Au) film deposited on higher refractive index Gallium phosphate (GaP) substrate. The sub-wavelength periodic metal nano structuring enable to couple photon to couple with the surface plasmons (SPs) excited by them. These grating devices provide the efficient control on the SPs which propagate on the interface of noble metal and dielectric whose frequency is dependent on the bulk electron plasma frequency of the metal. For a fixed periodicity (${\Lambda}=700 nm$) and slit width (w = 100 nm) in the grating device, the efficiency of SPP excitation is about 40% compared to the transmission in the near-field. Efficient coupling of SPs with photon in dielectric provide field localisation on sub-wavelength scale which is needed in Heat Assisted Magnetic recording (HAMR) systems. The GaP is also used to emulate Vertical Cavity Surface emitting laser (VCSEL) in order to provide cheaper alternative of light source being used in HAMR technology. In order to understand the underlying physics, far-and near-field results has been compared with the modelling results which are obtained using COMSOL RF module. Apart from this, grating devices of smaller periodicity (${\Lambda}=280nm$) and slit width (w = 22 nm) has been fabricated on GaP substrate which is photoluminescence material to observe amplified spontaneous emission of the SPs at wavelength of 805 nm when the grating device was excited with 532 nm laser light. This observation is unique and can have direct application in light emitting diodes (LEDs).

• Applied Science and Convergence Technology
• /
• 제26권4호
• /
• pp.79-85
• /
• 2017

The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.