• Korean Journal of Materials Research
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• v.26 no.6
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• pp.342-346
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• 2016

To observe the bonding structure and electrical characteristics of a GZO oxide semiconductor, GZO was deposited on ITO glasses and annealed at various temperatures. GZO was found to change from crystal to amorphous with increasing of the annealing temperatures; GZO annealed at $200^{\circ}C$ came to have an amorphous structure that depended on the decrement of the oxygen vacancies; increase the mobility due to the induction of diffusion currents occurred because of an increment of the depletion layer. The increasing of the annealing temperature caused a reduction of the carrier concentration and an increase of the bonding energy and the depletion layer; therefore, the large potential barrier increased the diffusion current dna the Hall mobility. However, annealing temperatures over $200^{\circ}C$ promoted crystallinity by the defects without oxygen vacancies, and then degraded the depletion layer, which became an Ohmic contact without a potential barrier. So the current increased because of the absence of a potential barrier.

• Journal of the Korean Ceramic Society
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• v.31 no.1
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• pp.74-78
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• 1994

Degradation of thin oxide by doped poly-Si and its improvement were studied. The gate oxide can be degraded by phosphorous in poly-Si doped POCl3. The degradation is increased with the decrement of sheet resistance and poly-Si thickness. Oxide failures of amorphous-Si are higher than those of poly-Si. In-situ double deposition of amorphous-Si, 54$0^{\circ}C$/30 nm, and poly-Si, 6$25^{\circ}C$/220 nm, forms the mismatch structure of grain boundary between amorphous-Si and poly-Si, and suppresses the excess phosphorous on oxide surface by the mismatch structure. The control of phosphorous through grain boundary improves the oxide reliability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.331-334
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• 1998

Crystal structure and surface morphology of Se thin film fabricated by EBE method had been studied. Se thin film was deposited with amorphous structure until substrate temperature of l00$^{\circ}C$. But Se thin film was grown with monoclinic structure at substrate temperature af over 150$^{\circ}C$, and its lattice constant of a, b and c was 12.76${\AA}$, 9.15${\AA}$ and 10.41${\AA}$ respectively. Also, after heat-treatment at 150。 for 15 min with substrate temperature of l00。, amorphous Se was proved to be hexagonal structure, and its lattice constant of a and c was 4.27${\AA}$ and 4.83${\AA}$ respectively.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.4
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• pp.32-35
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• 1979

When photon was injected to SnO2- amorphous Sb S thin film -Sn structure through the window of SnO2, photo- voltaic effect was observed. With the energy change of photon, photovoltage had either positive or negative value This phenomenon was considered to be caused by formation of n-n heterojunction in SnO2 - Sb S structure and Schottky junction Sb S -Sn structure.

• Journal of Magnetics
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• v.3 no.1
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• pp.21-30
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• 1998

An artificially modulated magnetic Co/Pd multilayer is one of the promising candidates for high density magneto-optic (MO) recording media, due to large Kerr rotation angle in the wavelength of a blue laser beam. however, since multilayer structure, as well as amorphous structure, is a non-equilibrium state in terms of free energy and MO recording is a kind of thermal recording which is conducted aound Curie temperature (Tc) of the recording media, when the multilayer is used for the MO recording media, changes in the multilayer structure are occurred as the amorphous structure do. Therefore, the assessment of the structural stability in the Co/Pd multilayer is crucially important both for basic research and applications. As the parameter of the structural stability in this research, modulation amplitude and particle size of the Co/Pd multilayer are measured in terms of Ar sputtering pressure and heat treatment temperature. From the results of the research, we find out that the magnetic exchange energy in the structural changes of a magnetic multilayer structure and suggest the operating temperature range for MO recording in the Co/Pd multilayer for the basic research and applications, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.52-52
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• 2010

Amorphous carbon films have a variety of potential applications. In most such applications film properties are crucial and highly dependent on the film growth conditions. We here investigate the atomic structure of the films, which is generated at various incidence angles, using the classical molecular dynamics. Varying incidence angle of the deposited carbon atoms, different level of sp hybridization and porosity of the film are captured in our model. As the incidence angle becomes glancing, subplantation of the deposited carbon in vertical direction is significantly reduced, rather bouncing back of the incident carbon with slight modification of surface structure is mainly occurred at the early stage of the film growth. As the surface becomes rougher, shadowing effect at these glancing incidences also becomes more significant, which tends to cause asymmetrical and columnar structure. We describe incidence angle dependence of the evolution of the atomic structure of the film and its corresponding properties.

• Korean Journal of Materials Research
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• v.17 no.8
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• pp.408-413
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• 2007

Process of the hydroxyapapite(HA) precipitation on bioactive titanium metal prepared by NaOH in a modified-simulated body fluid(mSBF) was investigated by high resolution transmission electron microscope (HRTEM) attached with energy dispersive X-ray spectrometer(EDX). The amorphous titanate phase on titanium surface is form by NaOH treatment and an amorphous titanate incorporated calcium and phosphate ions in the liquid to form an amorphous calcium phosphate. With increasing of soaking time in the liquid, the HA particles are observed in amorphous calcium phosphate phase with a Ca/P atomic ratio of I.30. The octacalcium phosphate (OCP) structure is not detected in HRTEM image and electron diffraction pattern. After a long soaking time, the HA particles grow as needle-like shape on titanium surface and a large particle-like aggregates of needle-like substance were observed to form on titanium surface within needle-like shape. A long axis of needle parallels to c-direction of the hexagonal HA structure.

• Transactions of Materials Processing
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• v.7 no.4
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• pp.333-339
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• 1998

Hot torsion tests were conducted to investigate the high temperature deformation behavior of $Al_{85}Ni_{10}Y_5$ alloy extrudates fabricated with amorphous ribbons. The powder metallurgy routes, hot pressing and hot extrusion were used to fabricate the extrudates. Thermal properties of amorphous ribbons with different thickness as a function of aging temperature were studied by thin film x-ray dif-fraction (XRD) and differential scanning calorimetry(DSC). The Al phase crystallite firstly formed in the amorphous ribbons and its crystallization temperature($T_x$)Was ~210${\circ}C$ During the processings of consolidation and extrusion, nano-grained structure(~100 nm) was formed in the Al85Ni10Y5 alloy extrudates. The as-extrudated Al85Ni10Y5 alloy and the $Al_{85}Ni_{10}Y_5$ alloy annealed at 250${\circ}C$ for 1 hour showed a flow curve of DRV(dynamic recovery) during hot deformation at 400-550${\circ}C$. On the other hand, the $Al_{85}Ni_{10}Y_5$ alloy annealed at 400${\circ}C$ for 1 hour showed a flow curve of DRX(dynamic recrys-tallization) during hot deformation at 450-500${\circ}C$. Also the flow stress and flow strain of the $Al_{85}Ni_{10}Y_5$ alloy extrudate annealed at 400${\circ}C$ were higher than those at 250${\circ}C$.

• Korean Journal of Optics and Photonics
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• v.8 no.6
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• pp.500-505
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• 1997

Experimental amorphous photodiode is fabricated on CMOS IC using a-Si:H p-i-n structure. Amorphous photodiode is scuccessfully integrated on CMOS IC using amorphous Si produced by PECVD system. The PECVD system can deposit a-Si:H at low temperature so that photodiode can be integrated with CMOS IC structure without any process incompatibility. The fabricated amorphous photodiode has a breakdown voltage of below -20 V, a leakage current of about 1 $\mu\textrm{A}$, and turn-on voltage of 0.6~0.8 V. It is demonstrated that the photocurrent of optical signal can be turned on and off by a small voltage and the fabricated amorphous p-i-n photodiode can be used as an optical switch.

• Journal of Powder Materials
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• v.12 no.6 s.53
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• pp.406-412
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• 2005

This work is to present a new synthesis of metallic glass (MG)/metallic glass (MG) composites using gas atomization and spark plasma sintering (SPS) processes. The MG powders of $Cu_{54}Ni_6Zr_{22}Ti_{18}$ (CuA) and $Ni_{59}Zr_{15}Ti_{13}Nb_7Si_3Sn_2Al_1$(NiA) as atomized consist of fully amorphous phases and present a different thermal behavior; $T_g$ (glass transition temperature) and $T_x$ (crystallization temperature) are 716K and 765K for the Cu base powder, but 836K and 890K for the Ni base ones, respectively. SPS process was used to consolidate the mixture of each amorphous powder, being $CuA/10\%NiA\;and\;NiA/10\%CuA$ in weight. The resultant phases were Cu crystalline dispersed NiA matrix composites as well as NiA phase dispersed CuA matrix composites, depending on the SPS temperatures. Effect of the second phases embedded in the MG matrix was discussed on the micro-structure and mechanical properties.