• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.276-283
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• 2005

Magnetic tunneling transistor (MTT) device using the amorphous n-type Si semiconductor film for base and collector consisting of the [CoFe/NiFe](free layer) and Si(top layer) multilayers was used to study the spin-dependent hot electron magnetocurrent (MC) and tunneling magnetoresistance (TMR) at room temperature. A large MC of 40.2 % was observed at the emitter-base bias voltage ( $V_{EB}$ ) of 0.62 V. The increasing emitter hot current and transfer ratio ( $I_{C}$/ $I_{E}$) as $V_{EB}$ are mainly due to a rapid increase of the number of conduction band states in the Si collector. However, above the $V_{EB}$ of 0.62 V, the rapid decrease of MC was observed in amorphous Si-based MTT because of hot electron spin-dependent elastic scattering across CoFe/Si interfaces.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.113-118
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• 1997

For the amorphous F $e_{78}$ $B_{13}$S $i_{9-x}$G $e_{x}$ alloy, thermal analysis and measurements of the magnetic properties were carried out. As the content of Ge increased, the crystallization temperature was decreased and the Curie temperature was increased, and the tendencies were almost linear. The core loss of the amorphous alloy for x=1.7, field annealed at optimized condition, was 0.057 W/kg(l.0T, 60Hz), which was about 30% lower than that of no Ge added amorphous alloy (basic composition). Such a low core loss characteristics was thought to be caused by the lower coercive force and good squareness of B-H loop of the alloy.y.y.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1314-1316
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• 1997

In this study, We fabricated thin film magnetic core inductors by using thin film manufacturing techniques such as photolithography and wet etching process. The inductors were prepared using multi-layered CoNbZr/Cu/CoNbZr. These devices are measured at high frequency range of $1\;MHz{\sim}1\;GHz$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.89-92
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• 1996

In this paper, we mention the study on the sensing function of amorphous magneto- striction wire with about 125${\mu}{\textrm}{m}$$\Phi$ in diameter. The wire in fabricated by using injection and quenching method under the high speed rotating water flow. The wire\`s compotion is (Fe$_{75}$ $Co_{25}$)$_{77}$Si$_{8}$B$_{15}$ , and generates sharp Matteucci voltage by large Barkhausen jump effect even the weak magnetic field. In this study, we don\`t use pick-up coil. Instead, we apply external magnetic field of 3.6Oe in the direction orthogonal to the wire. Then, we detect Matteucci voltage of 1.lmV to both side of 20cm amorphous-wire. Thus, we find that the fabricated wire has the function necessary as the high sensitive sensor material.l.al.l.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.100-103
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• 2001

In order to investigate the magnetic properties of CoCr-based bilayered thin films on kind of underlayer, we introduced amorphous Si layer to Co-Cr(-Ta) magnetic layer as underlayer. With the thickness of CoCr, CoCrTa single layer, crystalline orientation and perpendicular coercivity was improved. It was revealed that by introducing the Si underlayer, the c-axis orientation of CoCr, CoCrTa magnetic layer was improved largely. However, with increasing Si film thickness, perpendicular coercivity and saturation magnetization of Cocr/si, CoCrTa/Si bilayered thin films was decreased. Grain size of bilayered thin films became larger.

• Journal of Magnetics
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• v.3 no.2
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• pp.49-54
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• 1998

Dependence of magnetic and magneto-optic properties on composition of amorphous NdFe alloys has been studied to identify a promising magneto-optic recording material in the wavelength of a blue laser beam. From the view point of crystallographic state, perpendicular magnetic anisotropy energy and polar Kerr rotation angle, the Nd-rich region was found to be suitable for the research purpose.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.149-151
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• 1994

This thesis describes the effect of heat treatment on the magnetic properties of Co-bsaed Amorphous. A sample was chosen as basic composition with Co$\_$82//Si$\_$2//B$\_$16/ of zero magnetostriction. It was made by single roll method with quartz orifice 0.5[mmø], Ar gas pressure 0.6 [kg/cm$^2$] and roll speed 28 (m/sec) and atmosphere is ,Ar gas. We obtained the sample of width 2.4(mm), thickness 45[$\mu\textrm{m}$]. Made sample annealed for the improvement of magnetic propertics at at annealing temperature 325,350,375 and 400$^{\circ}C$ and annealing time 15, 30, 45, 60 and 120min respectiveily. Amorphous ribbon of co-based showed high permeab- ility ${\mu}$=8000∼14000, and became improvement of magnetic properties according to anneal ins temperature and time. Especially. Amorphous sample at 325$^{\circ}C$ ,45min appearanced high permeability ${\mu}$=13, 589 at frequency f= 100Hz. and loss factor was reduced at low frequency with rising anneal ins ti me and temperature more annealed sample than basic sample.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.786-787
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• 2006

The magnetic inductance of nanocrystalline $Fe_{73}Si_{16}B_7Nb_3Cu_1$ and an amorphous FeSiB powder sheet has been investigated to identify RFID performance. The powder was mixed with binder and solvent and tape-casted to form films. Results show annealing significantly influenced on the inductance of the material. The surface oxidation of the particles was the main reason for the reduced inductance. The maximum inductance of $Fe_{73}Si_{16}B_7Nb_3Cu_1$ alloy was about $88{\mu}H$ at 17.4 MHz, about 65% greater compared to the FeSiB alloy. The higher inductance in the nanocrystalline alloy indicates it may be used as a potential replacement of current RFID materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.90-95
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• 2003

The present paper is to investigate the phase stability and soft magnetic properties of amorphous CoNbZr films when Pd is added as a substitution for CoNbZr alloys. The films were prepared by a RF magnetron sputtering method. The CoNbZrPd films deposited on Si wafers exhibited amorphous structures being independent upon the amount of Pd added in the films. On the addition of 4.34% Pd, the excellent soft magnetic characteristics of the films were observed with a coercive force of 0.54 Oe and an anisotropy field of 11 Oe, whereas a coercive force of 1 Oe and an anisotropy field of 3.5 Oe were shown in the film without the addition of Pd. The increased anisotropy field and low coercive force of the films may be attributed to the occupancy of Pd in the preferred sites parallel to the external magnetic field applied on the deposition process. A permeability of about 1100 was kept constant in the operation frequency ranging up to 100 MHz, which can be explained by the Landau-Lifshitz formula.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.136-139
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• 1997

In this paper, we inveatigate frequency dependance of inductance effects of FeCoB amorphous magnetic films. First, amorphous magnetic film having near zero magnetostriction is the basic composition of (Fe$_{1-x}$ / $Co_{x}$)$_{79}$Si$_2$B$_{19}$ with x=0.94, 0.95 and in order to decrease magnetio . anisotropy, the film was annealed in 28$0^{\circ}C$/30min, 40$0^{\circ}C$/30min, 40$0^{\circ}C$/1hr with near crystallization temperature under non-magnetic field. As result of investigation, in case of x=7.95 than x=0.94, we could have obtained high values, which inductance ratios in the low frequency was 488%. And Quality factor Q was under 0.7 in all sample, in case of annealed in 28$0^{\circ}C$/30min, we could have obtained highest value, which x=0.9fl is about 0.62 in 400[kHz], and in case of x=0.95 was about 0.35 in 1[MHz].z].].