• 전기의세계
• /
• v.23 no.5
• /
• pp.54-60
• /
• 1974

Proposals were mode on how to differentiate radiation effects in morphological phases of polyethylene and discussions were developed with the results obtained on a low density polyethylene, SOCAREX, specified by number average molecular weight; overbar Mn=5,400, density; 0.92, and degree of branch; 3.4/100 carbon atom, which was irradiated to Co$^{60}$ .gamma. ray at the dose rate of 0.5 Mrad/hr in ambient temperature under the pressure of 10$^{-5}$ Torr. or 1 atm. respectively. The effect to crystalline phase in possibly deduced from dose dependent variation of relative area between (110) and (200) peaks on X ray diffraction spectrum and that, the effects to amorphous phase can be understood through dose dependent relaxation behaviours of .betha. peak on internal friction characteristics of the specimen. The results obtained thus far indicate that, in crystalline phase, relative crystallinity shows a rather rapid decrease up to 20 Mrad with increasing dose, however, little change of crystallinity can be observed in the region between 20-200 Mrad, and degradation appears to be more predominant than crosslinking up to 60 Mrad. While in amorphous phase the indication also shows that degradation is only predominant up to 20 Mrad. Furthermore several correlations can be seen with amenable explanation between dose dependent behaviours observed in both phases.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.406-406
• /
• 2016

To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.

• Korean Journal of Materials Research
• /
• v.4 no.3
• /
• pp.301-311
• /
• 1994

The growth of amorphous and first crystalline phase, and phase sequence by solid state reaction were examined in Co/Si multilayer thin films by DSC and XRD. The experimental results were compared with the results expected by effective driving force models, PDF and effective heat of formation models.Amorphous phase growth was not observed in Co/Si system and it was consistent with the predicted result by effective driving force. It was observed that the first crystalline phase is CoSi. According to the PDF and effective heat of formation models, the first crystalline phases were CoSi and $CO_2Si$, respectively. The experiemental results were coincident with the PDF model considering structure factors. In case of the atomic concentration ratios of 2Co : 1Si and 1Co : 2Si, the phases sequences were $CoSi\to Co_2Si$ and $CoSi \to Co_2Si \to CoSi \to CoSi_2$, respectively and it was analysized through the effective heat of formation model. The formations of CoSi, $CO_2Si$ and $COSi_2$ in initial stage were controlled by nucleation and the activation energies for the nucleation of three phases were 1.71, 2.34 and 2.79eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.334-345
• /
• 2008

컴퓨터의 발달과 더불어 현대사회는 기록하고 보존해야할 정보의 양이 점점 방대해 지고 있다. 그로 인해 자기기록매체처럼 정보를 사용자의 편의에 따라 반복적으로 기록하고 재생할 수 있는 광기록매체에 대한 관심이 증가되고 있다. $Ge_2Sb_2Te_5$(GST)는 기존의 CD-RW나 Floppy Disk(FD)를 대체할 차세대 기록매체로 주목받고 있다. 따라서 본 연구에서는 비정질상과 결정상으로 변하는 성질을 가지고 있는 GST롤 상변화 기록매체로서 이용하기 위해 굴절률을 평가하였다. 시료는 5N의 순도를 갖는 Ge, Sb, Te 물질을 준비하고 조성비에 맞추어서 석영관에 진공 봉입한 후 용융-냉각법으로 벌크를 제작하였고 열증착 방법으로 Si 및 유리 기판위에 1000nm 두께로 박막을 제작하였다. UV-Vis-IR spectrophotometer를 사용하여 반사도와 투과도를 측정하였고 측정한 스펙트럼을 이용하여 Swanepoel method로 굴절률을 계산하였다. 본 연구진이 자체 개발한 계산툴에 실험값을 대입하였고 실험에 의해 얻은 투과도와 계산툴에 의해 얻은 투과도 스펙트럼을 비교하였다.

• Journal of Pharmaceutical Investigation
• /
• v.37 no.1
• /
• pp.1-5
• /
• 2007

Solid dispersions of piroxicam were prepared by melting method using poloxamer as a carrier. The results of DSC and XRD studies showed that the amorphous farm of piroxicam coexisted with the crystalline form in the solid dispersions. However, the ratio of crystalline form of piroxicam in the solid dispersion prepared by melting method decreased in comparison with the same ratio of the solid dispersion prepared by solvent method. As the ratio of poloxamer in the solid dispersion increased, the ratio of the amorphous form of piroxicam in the solid dispersion increased. The dissolution rate of piroxicam from the solid dispersions was significantly higher than that from piroxicam powder. In comparison to the solid dispersion prepared by solvent method, the dissolution rate of piroxicam from the solid dispersion prepared by melting method was higher. As the ratio of poloxamer in the solid dispersion prepared by melting method increased, the initial dissolution rate decreased, however, the total amount dissolved at the end of the study increased.

• Transactions of the Society of Information Storage Systems
• /
• v.3 no.3
• /
• pp.118-122
• /
• 2007

Phase-change wet-etching technology using GeSbTe phase-change films is developed. Selective etching between an amorphous and a crystalline phase can be carried out with an alkaline etchant of NaOH. Etching selectivity is dependent not only on the concentration of the alkaline etchant but also on the film structure. Specifically, metal films for heat control cause marked effects on the etching properties of GeSbTe film. Surviving amorphous pits can be obtained with Al metal layer, however etched amorphous pits are seen with Ag metal layer. An opposite selective etching behavior can be observed between samples with two different metal layers.

• Journal of the Semiconductor & Display Technology
• /
• v.15 no.1
• /
• pp.1-5
• /
• 2016

In this study, we have investigated the effect of the substrate temperature on the characteristics of IGZO thin films for the TCO(transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at various substrate temperature (room temperature ${\sim}400^{\circ}C$). IGZO thin films deposited at room temperature show amorphous structure, whereas IGZO thin films deposited at $250^{\circ}C$ or more show crystalline structure having an (222) preferential orientation. The electrical resistivity of IGZO film increased with increasing temperature. The change of electrical resistivity with increasing temperature was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IGZO films deposited at R.T. was lower than that of the crystalline-IGZO thin films deposited at $300^{\circ}C$. The transmittance of the IGZO films deposited at $300^{\circ}C$ was decreased deposited with hydrogen gas.

• Proceedings of the KIEE Conference
• /
• 1996.11a
• /
• pp.229-231
• /
• 1996

We are studied the stability of amorphous and crystalline $Te_{100-x}Ge_x$ (x=10, 15. 25, 40, 50, 60 at.%) thin films by observing the degradation in 8O%RH/$66^{\circ}C$ environment and the reflectance ratio. The degradation was observed with the transmittance and reflectance, the reflectance was measured at 780nm in the wavelength range of diode laser. In amorphous $Te_{100-x}Ge_x$ thin films of below x=4O at.%, the degradation was observed, the thin film of x=10 at.% was shown the degradation degree of 12.5%. In crystalline $Te_{100-x}Ge_x$ thin films of x=10, 40 at.%, the degradation degree were 12.8%, 13%, respectively. The reflectance ratio were shown above 20% in. all composition ratio. Therefore, we are expected that $Te_{100-x}Ge_x$ thin films of x=50, 60 at.% has the long life for the optical recording media.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.20 no.6
• /
• pp.254-261
• /
• 2010

Polycrystalline silicon (pc-Si) films are fabricated and characterized for application to pc-Si thin film solar cells as a seed layer. The amorphous silicon films are crystallized by the aluminum-induced layer exchange (ALILE) process with a structure of glass/Al/$Al_2O_3$/a-Si using various thicknesses of $Al_2O_3$ layers. In order to investigate the effects of the oxide layer on the crystallization of the amorphous silicon films, such as the crystalline film detects and the crystal grain size, the $Al_2O_3$ layer thickness arc varied from native oxide to 50 nm. As the results, the defects of the poly crystalline films are increased with the increase of $Al_2O_3$ layer thickness, whereas the grain size and crystallinity are decreased. In this experiments, obtained the average pc-Si sub-grain size was about $10\;{\mu}m$ at relatively thin $Al_2O_3$ layer thickness (${\leq}$ 16 nm). The preferential orientation of pc-Si sub-grain was <111>.

• KSBB Journal
• /
• v.26 no.4
• /
• pp.283-292
• /
• 2011

Solid dispersion is one of well-established pharmaceutical techniques to improve the dissolution and consequent bioavailability of poorly water soluble drugs. It is defined as a dispersion of drug in an inert carrier matrix. Solid dispersions can be classified into three generations according to the carrier used in the system. First and second generations consist of crystalline and amorphous substances, respectively. Third generation carriers are surfactant, mixture of polymer and surfactants, and mixture of polymers. Solid dispersions can be generallyprepared by melting method and solvent method. While melting method requires high temperature to melt carrier and dissolve drug, solvent method utilizes solvent to dissolve the components. The improvement in dissolution through solid dispersions is attributed to reduction in drug particle size, improvement in wettability, and/or formation of amorphous state. The primary characteristics of solid dispersions, the presenceof drug in amorphous state, could be determined by differential scanning calorimetry (DSC), powder X-ray diffraction (PXRD), and fourier-transformed infrared spectroscopy (FTIR). In spite of the significant improvement in dissolution by solid dispersion technique, some drawbacks have limited the commercial application of solid dispersions. Thus, further studies should be conducted in a direction to improve the congeniality to commercialization.