• Title/Summary/Keyword: amorphous and crystalline

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Characterization of Atomic Structure in Rapidly Solidified Amorphous Silicon (급냉응고된 비정질 실리콘 분말의 원자구조에 관한 연구)

  • Kim, Yeon-Ok
    • Korean Journal of Materials Research
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    • v.4 no.6
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    • pp.644-650
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    • 1994
  • The submicron powders of high-purity silicon have been produced by Electrohydrodynamic Atomization. Field-emission scanning transmission electron microscopy(STEM) is used to determine the microstructure and solidification phase. .Then it is found that the droplets less than 60nm diameter are solidified as the amorphous phase. A useful and accessible characterization of atomic arrangements in amorphous solids can be given in terms of a radial distribution function. According to experimental determinations of the radial distribution function for amorphous silicon, its similarity to the crystalline structure at small radial distances indicates that the basic tetrahedral arrangement found in the diamond cubic structure of silicon must be maintained in the amorphous structure.

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Influence of Neutral Particle Beam Energy on the Structural Properties of Amorphous Carbon Films Prepared by Neutral Particle Beam Assisted Sputtering

  • Lee, Dong-Hyeok;Jang, Jin-Nyeong;Gwon, Gwang-Ho;Yu, Seok-Jae;Lee, Bong-Ju;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.194-194
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    • 2011
  • The effects of argon neutral beam (NB) energy on the amorphous carbon (a-C) films were investigated, while the a-C films were deposited by neutral particle beam assisted sputtering (NBAS) system. The energy of neutral particle beam can be controlled by reflector bias voltage directly as a unique operating parameter in this system. The deposition characteristics of the films investigated of Raman spectra, UV-visible spectroscopy, electrical conductivity, stress measurement system, and ellipsometer indicate the properties of amorphous carbon films can be manipulated by only NB energy (or reflector bias voltage) without changing any other process parameters. We report the effect of reflector bias voltage in the range from 0 to -1KV. By the increase of the reflector bias voltage, the amount of cross-linked sp2 clusters as well as the sp3 bonding in the a-C film coated by the NBAS system can be increased effectively and the composition of carbon thin films can be changed from nano-crystalline graphite phase to amorphous carbon phase.

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A Study on Implanted and Annealed Antimony Profiles in Amorphous and Single Crystalline Silicon Using 10~50 keV Energy Bombardment (비정질 및 단결정 실리콘에서 10~50 keV 에너지로 주입된 안티몬 이온의 분포와 열적인 거동에 따른 연구)

  • Jung, Won-Chae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.11
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    • pp.683-689
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    • 2015
  • For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.

Efficient Approach to Measure Crystallization Temperature in Amorphous Thin Film by Infrared Reflectivity

  • Wang, Wenxiu;Saito, Shin;Yakabe, Hidetaka;Takahashi, Migaku
    • Journal of Magnetics
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    • v.18 no.2
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    • pp.86-89
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    • 2013
  • This paper shows a new effective approach to measure crystallization temperature of soft magnetic underlayer (SUL) for next generation of heat assisted perpendicular recording media. This approach uses temperature dependent reflectivity, which shows a clear jump when samples are crystallized. To achieve this measurement, an optical system is set up using hot plate and infrared laser. Reflectivity of SUL $(Co_{70}Fe_{30})_{92}Ta_3Zr_5$ shows a clear jump at its amorphous-crystalline transition temperature. Experiment results show this effect is clear in infrared region, and is weak for visible light.

Crystallization of Ba-ferrite/sapphire(001) Thin Films Studied by Real-Time Synchrotron X-ray Scattering

  • Cho, Tae-Sik
    • Journal of Magnetics
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    • v.7 no.2
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    • pp.51-54
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    • 2002
  • The crystallization of amorphous Ba-ferrite/sapphire(001) thin films was studied in real-time synchrotron x-ray scattering experiments. In the sputter-grown amorphous films, we found the existence of epitaxial $Fe_3O_4$ interfacial crystallites (50-${\AA}$-thick), well aligned $[0.03^circ$full-width at half-maximum (FWHM)] to the sapphire [001] direction. The amorphous precursor was crystallized to epitaxial Ba-ferrite and \alpha-Fe_2O_3$grains in two steps; i) the nucleation of crystalline \alpha-Fe_2O_3$ phase started at $300^circ{C}$ together with the transformation of the $Fe_3O_4$ crystallites to the \alpha-Fe_2O_3$ crystallites, ii) the nucleation of Ba-ferrite phase occurred at temperature above $600^circ{C}$. In the crystallized films irrespective of the film thickness, the crystal domain size of the \alpha-Fe_2O_3$grains was about 250 ${\AA}$ in the film plane, similar to that of the Ba-ferrite grains.

Operating Temperature Characteristics of Amorphous Silicon Solar Cells (비정질(非晶質) 실리콘 태양전지(太陽電池)의 동작온도(動作溫度) 특성(特性))

  • Han, Min-Koo
    • Solar Energy
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    • v.7 no.1
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    • pp.30-34
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    • 1987
  • Experimental results are discussed concerning temperature effects from $25^{\circ}C$ to $100^{\circ}C$ on amorphous silicon solar cells. N-I-P hydrogenated amorphous silicon solar cells are fabricated on stainless steel and indium tin oxide glass substrates. The open circuit voltage, short circuit current, fill factor and conversion efficiency have been measured under AM1 condition as a function of temperature. The open circuit voltage decreased by $2.6mV/^{\circ}C$ while the short circuit current increases with increased temperature. The conversion efficiency is almost independent of temperature which is contrary to widely using single crystalline solar cells of which efficiencies decrease with increasing temperature.

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The Magnetic and Magnetostrictive Properties of Melt-Spun Ribbons of B Containing Terfenol-D Alloys

  • Kim, S. R.;S. Y. Kang;S. H. Lim
    • Journal of Magnetics
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    • v.2 no.1
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    • pp.1-6
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    • 1997
  • The magnetic and magnetostrictive properties of melt-spun ribbons of the alloys (R0.33Fe0.67)1-xBx (R=Tb0.3Dy0.7 and 0$\leq$x$\leq$0.06) are ivestigated as a function of wheel speed during melt-quenching. The saturation magnetiation of the alloys with a crystalline phase ranges from 70 to 80 emu/g and does not vary substantially with the B content. The saturation magnetization of an amorphous phase, which is formed at the condition of thigh wheel speed and high B content, is reduced significantly, however. The coercive force is minimum at x= 0.02 and increases monotonously with the further increase of B content when the microstructure mainly consists of a crystalline phase, but again it is reduced significantly by the formation of an amorphous phase. The low field sensitivity of magnetostriction with magnetic field is found to be good for the alloys with x$\leq$0.04 over a wide range of wheel speed. This magnetostrictive behavior is in contrast with that observed previously for Dy-Fe and Tb-Fe based alloys and is thought to be due to low intrinsic magnetocrystalline anisotropy of the compound.

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Synthesis of Ultra-fine Calcium Phosphate Powders from Ca(OH)2 Suspension and Various Phosphoric Aqueous Solutions (Ca(OH)$_2$ 현탁액과 각종 인산 수용액으로부터 인산칼슘 초미분말의 제조)

  • 민경소;최상흘
    • Journal of the Korean Ceramic Society
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    • v.29 no.1
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    • pp.74-82
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    • 1992
  • Ultra-fine calcium phosphate powders were synthesized by the reaction of Ca(OH)2 suspension with various phosphoric aqueous solutions such as (NH4)2HPO4, H4P2O7 and H3PO4, and the characterization of powders was examined for each synthetic condition. When (NH4)2HPO4 and H3PO4 were used, hydroxyapatite powders with poor crystallinity were obtained. In the case of H4P2O7, amorphous calcium phosphate was obtained up to 0.3 mol/ι Ca(OH)2 suspension, but above the concentration, poor crystalline hydroxyapatite was produced. Crystalline phases of powders heat-treated at 80$0^{\circ}C$ were hydroxyapatite, $\beta$-tricalcium phosphate and $\beta$-tricalcium phosphate for the case of (NH4)2HPO4, H4P2O7 and H3PO4, respectively. SEM observation revealed that the shapes of synthesized powders were vigorously agglomerated spherical with the size below 100 nm, but TEM observation revealed that primary shapes of particles were rod for (NH4)2HPO4 and H3PO4 and were sphere for H4P2O7. There was no dependence of the concentration of Ca(OH)2 suspension. In the case that reaction temperature and pH of the suspension were raised, the inclination to the hydroxyapatite were remarkable. The amorphous calcium phosphate synthesized in this experiment contained water about 20% , and was crystallized to $\beta$-tricalcium phosphate at 69$0^{\circ}C$.

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Present Status and Prospects of Thin Film Silicon Solar Cells

  • Iftiquar, Sk Md;Park, Jinjoo;Shin, Jonghoon;Jung, Junhee;Bong, Sungjae;Dao, Vinh Ai;Yi, Junsin
    • Current Photovoltaic Research
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    • v.2 no.2
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    • pp.41-47
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    • 2014
  • Extensive investigation on silicon based thin film reveals a wide range of film characteristics, from low optical gap to high optical gap, from amorphous to micro-crystalline silicon etc. Fabrication of single junction, tandem and triple junction solar cell with suitable materials, indicate that fabrication of solar cell of a relatively moderate efficiency is possible with a better light induced stability. Due to these investigations, various competing materials like wide band gap silicon carbide and silicon oxide, low band gap micro-crystalline silicon and silicon germanium etc were also prepared and applied to the solar cells. Such a multi-junction solar cell can be a technologically promising photo-voltaic device, as the external quantum efficiency of such a cell covers a wider spectral range.