• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.5
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• pp.1013-1019
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• 2007

Amorphous silicon and silicon-nitride films were deposited using plasma-enhanced chemical vapor deposition (PECVD) method at $150^{\circ}C$. As fraction of $H_2$ in source gas was increased, characteristics of low-temperature silicon-nitride films approached those of conventional high-temperature films; the refractive index approached 1.9 and the ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds increased. And also, as fraction of $H_2$ in source gas was increased, characteristics of low-temperature silicon films approached those of conventional high-temperature films; refractive index and optical band gap approached 4.2 and 1.8 eV, and $[Si-H]/([Si-H]+[Si-H_2])$ increased. Lower RF power and process-pressure made the amorphous silicon films to be better properties. Increase of $H_2$ ratio seemed as the common factor to get reliable amorphous silicon and silicon-nitride films for thin-film-transistors (TFTs) at low temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.77-80
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• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta$$\theta$$_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 2000e. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.t also seed layer.r.

• Journal of the Korean institute of surface engineering
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• v.43 no.1
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• pp.36-40
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• 2010

The SiO vapor that was generated from a mixture of Si and $SiO_2$ was reacted at $1350^{\circ}C$ for 2 h under vacuum with carbon nanofibers to produce SiC nanofibers having an average diameter of 100~200 nm. In order to understand the gas corrosion behavior, SiC nanofibers were exposed to air up to $1000^{\circ}C$. SiC oxidized to amorphous $SiO_2$, but its oxidation resistance was inferior unlike bulk SiC, because of high surface area of nanofibers. When SiC nanofibers were exposed to Ar-1% $SO_2$ atmosphere, SiC oxidized to amorphous $SiO_2$, without forming $SiS_2$, owing to the thermodynamic stability of $SiO_2$.

• ETRI Journal
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• v.26 no.3
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• pp.257-261
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• 2004

We grew amorphous SiCN films by pulsed laser deposition using mixed targets. The targets were fabricated by compacting a mixture of SiC and $SiC-{Si_3}{N_4}$ powders. We controlled the film stoichiometry by varying the mixing ratio of the target and the target-to-substrate distance. The mixing ratio of the target had a dominant effect on the film composition. We consider the structures of the SiCN films deposited using 30~70 wt.% SiC in the target to be an intermediate phase of SiC and $SiN_x$. This provides the possibility of growing homogeneous SiCN films with a mixed target at a moderate target-to-substrate distance.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.4
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• pp.185-189
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• 2004

The temporal variation of a secondary electron emission coefficient (${\gamma}$ coefficient) of hydrogenated amorphous silicon (a-Si:H) was investigated in a dc silane plasma. Estimated ${\gamma}$ coefficients have a value of 2.73 ${\times}$ 10$^{-2}$ on the pure aluminum electrode and 1.5 ${\times}$ 10$^{-3}$ after 2 hours deposition of -Si:H thin films on a cathode. It showed an abrupt decrease for about 30 minutes before saturation. The variation of the ${\gamma}$ coefficient was estimated as a function of the thin film thickness, and the film thickness was about 80 nm after 30 minutes deposition time. These results are compared with the results of a computer simulation for ion penetration into a cathode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.49-51
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• 1989

The effect of Mo elenent and annealing condition on the magnetic properties were investigated in Fe$_{80}$B$_{12}$Si$_{8}$ amorphous alloy. With increasing Mo contents, soft magnetic properties were improved by decreasing coercive force and increasing maximum permeability. These improvements were attributed to the decreasing of magnetostriction by Mo addition. The annealing treatment also improved the soft magnetic properties of (Fe$_{1-x}$ Mo$_{x}$)$_{80}$ B$_{12}$ Si$_{8}$ amorphous alloys. It could be thought that these improvements were ascribed to the relaxation of internal stress.nal stress.ess.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.550-552
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• 2003

We prepared $Co_{77}Cr_{20}Ta_3$ Magnetic layer for perpendicular magnetic recording media with introduce Two-step methode and Amorphous Si Underlayer on slide glass substrate. The thickness of magnetic layer were 100nm, and Underlayer were varied from 5 to 100 nm. The multi layer Properties of crystal structure were examined with XRD. Prepared thin films showed improvement of dispersion angle of c-axis orientation ${\Delta}{\theta}_{50}$ caused by inserting Buffer-layer and amorphous Si underlayer.

• Journal of the Korean institute of surface engineering
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• v.30 no.4
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• pp.248-254
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• 1997

The sulfidation behavior of a sputter-deposited amorphous coating of 69.0%Nb-16.9Ni-11.9%Al-2.2%Si (at.%) has been investigated as a funtion of temperature.(973-1173K) in pure sulfur pressure of 0.01atm. The sulfidation kinetics of the casting obyed the parabolic rate low over the whole temperature ranges studied. The stlfidation rate increased with the temperature, as expected. The sulfide scale, the composition of which was $Al_2S_3,\;NbS_2,\;Ni_{3-x}S_2\;and\;FeCrS_4$, formed on the amorphous coating was primarily bilayered. Both the outer fastgrowing non-protective 4Al_2S_3$scale and the inner slowly-growing protective $NbS_2$,/TEX> scale and the inner slowly-growing protective $NbS_2$ scale had some Fe and Cr dissolution, which evidently came from the base substrate alloy of stainless steel type 304. Belows the coating, Kirkendall void formation was noticed. Nevertheless, a dramatic improvement of sulfidation resistance was achieved by sputter-depositing Nb-2 Ni-Al-Si layer on the stainless steel 304.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.59-72
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• 1999

In this thesis, we measured the Barkhausen effect of CoFeSiB amorphous ribbon and then investigated its possibility to be used as a sensor material. We used a sample of composition $($Fe_{0.06}$$Co_{0.94}$)_${0.79}$$Si_{2.1}$$B_{18.9}$ with a thickness 12[pm1, width 2.5[rnml and length 5[cm], which was fabricated by a single roll method. In order to improve magnetic characteristics of the sample, we had carried on annealing in the magnetic field and in none magnetic field. And, experimented results to the magnetic characteristics show that the ribbon has large Barkhausen jump even in weak magnetic field below 0.5[0el. From the results, we confirmed that the sample can be used as an magnetic sensor material.

• Journal of the Korean Magnetics Society
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• v.23 no.4
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• pp.122-125
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• 2013

Perpendicular magnetic anisotropy (PMA) is the phenomenon of magnetic thin film which is preferentially magnetized in a direction perpendicular to the film's plane. Amorphous multilayer with PMA has been studied as the good candidate to realization of high density STT-MRAM (Spin Transfer Torque-Magnetic Random Access Memory). The current issue of high density STT-MRAM is a decrease in the switching current of the device and an application of amorphous materials which are most suitable devices. The amorphous ferromagnetic material has low saturated magnetization, low coercivity and high thermal stability. In this study, we presented amorphous ferromagnetic multilayer that consists of an amorphous alloy CoSiB and a nonmagnetic material Pd. We investigated the change of PMA of the $[CoSiB\;t_{CoSiB}/Pd\;1.3nm]_5$ multilayer ($t_{CoSiB}$ = 0.1, 0.2, 0.3, 0.4, 0.5, 0.6 nm, and $t_{Pd}$ = 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6 nm) and $[CoSiB\;0.3nm/Pd\;1.3nm]_n$ multilayer (n = 3, 5, 7, 9, 11, 13). This multilayer is measured by VSM (Vibrating Sample Magnetometer) and analyzed magnetic properties like a coercivity ($H_c$) and a magnetization ($M_s$). The coercivity in the $[CoSiB\;t_{CoSiB}\;nm/Pd\;1.3nm]_5$ multi-layers increased with increasing $t_{CoSiB}$ to reach a maximum at $t_{CoSiB}$ = 0.3 nm and then decreased for $t_{CoSiB}$ > 0.3 nm. The lowest saturated magnetization of $0.26emu/cm^3$ was obtained in the $[CoSiB\;0.3nm/Pd\;1.3nm]_3$ multilayer whereas the highest coercivity of 0.26 kOe was obtained in the $[CoSiB\;0.3nm/Pd\;1.3nm]_5$ mutilayer. Additional Pd layers did not contribute to the perpendicular magnetic anisotropy. The single domain structure evolved in to a striped multi-domain structure as the bilayer repetition number n was increased above 7 after which (n > 7) the hysteresis loops had a bow-tie shapes.