• 제목/요약/키워드: amorphous CoSiB

검색결과 96건 처리시간 0.036초

PECVD법에 의해 증착된 Ti-B-C코팅막 내의 보론함량과 증착온도에 따른 미세구조 및 기계적 물성의 변화 (The Effect of Boron Content and Deposition Temperature on the Microstructure and Mechanical Property of Ti-B-C Coating Prepared by Plasma-enhanced Chemical Vapor Deposition)

  • 옥정태;송풍근;김광호
    • 한국표면공학회지
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    • 제38권3호
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    • pp.106-111
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    • 2005
  • Ternary Ti-B-C coatings were synthesized on WC-Co and Si wafers substrates by a PECVD technique using a gaseous mixture of $TiCl_4,\;BCl_3,\;CH_4,\;Ar,\;and\; H_2$. The effects of deposition variables such as substrate temperature, gas ratio, $R_x=[BCl_3/(CH_4+BCl_3)]$ on the microstructure and mechanical properties of Ti-B-C coatings were investigated. From our instrumental analyses, the synthesized Ti-B-C coatings was confirmed to be composites consisting of nanocrystallites TiC, quasi-amorphous TiB2, and amorphous carbon at low boron content, on the contrary, nanocrystallites $TiB_2$, quasi-amorphous TiC, and amorphous carbon at relatively high boron content. The microhardness of the Ti-B-C coatings increased from $\~23 GPa$ of TiC to $\~38 GPa$ of $Ti_{0.33}B_{0.55}C_{0.11}$ coatings with increasing the boron content. The $Ti_{0.33}B_{0.55}C_{0.11}$ coatings showed lower average friction coefficient of 0.45, in addition, it showed relatively better wear behavior compared to other binary coatings of $TiB_2$ and TiC. The microstruture and microhardness value of Ti-B-C coatings were largely depend on the deposition temperature.

Giant Magnetoimpedance in C067Fe4Mo1.5Si16.5B11 Metallic Glass Ribbon

  • Kuzminski, M.;Nesteruk, K.;Lachowicz, H.K.;Krzyzewski, A.;Yu, Seong-Cho;Lee, Hee-Bok;Kim, Cheol-Gi
    • Journal of Magnetics
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    • 제9권2호
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    • pp.47-51
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    • 2004
  • Giant magneto-impedance (GMI) effect in zero-magnetostrictive Co-based amorphous ribbons samples in their as-quenched and stress-released states as well as with intentionally induced magnetic anisotropy were investigated. Magnetic and impedance properties of the samples exhibiting different anisotropy were compared and the optimum operation conditions for the studied samples from the view-point of their utilization as a sensor element have been determined. A design of a model of magnetic field sensor and characteristics of the constructed prototype are presented.

Temperature dependence of permeability and magnetoimpedance effect in $Co_{70}Fe_5Si_{15}Nb_{2.2}Cu_{0.8}B_7$ ribbons

  • Phan, Manh-Huong;Kim, Yong-Seok;Quang, Pham-Hong;Yu, Seong-Cho;Nguyen Chau;Chien, Nguyen-Xuan
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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    • pp.88-89
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    • 2003
  • During the past decade, giant magnetotransport phenomena such as giant magetoresistance (GMR) in thin films and in manganese perovskites, and, giant magnetoimpedance (GMI) in soft magnetic amorphous ribbons, have brought much interest in the basic physical understanding and their applications as magnetic recording heads and in magnetic sensors technology. Among the parameters required for the quality of a magnetic sensor, temperature dependences of GMR and GMI profiles are playing an important role. In the present work, we have studied temperature dependences of the longitudinal permeability and giant magnetoimpedance effect in $Co_{70}$F $e_{5}$S $i_{15}$ N $b_{2.2}$C $u_{0.8}$ $B_{7}$ amorphous ribbons expecting as a promising candidate in the domain of magnetic sensors.rs.rs.rs.s.

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IBC형 태양전지를 위한 균일하게 증착된 비정질 실리콘 층의 광섬유 레이저를 이용한 붕소 도핑 방법 (Boron Doping Method Using Fiber Laser Annealing of Uniformly Deposited Amorphous Silicon Layer for IBC Solar Cells)

  • 김성철;윤기찬;경도현;이영석;권태영;정우원;이준신
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.456-456
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    • 2009
  • Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a ${\mu}c$-Si:H intrinsic layer was deposited on the p-a-Si:H layer additionally by PECVD. To improve heat transfer rate to the amorphous silicon layer, and as heating both sides and protecting boron eliminating from the amorphous silicon layer. For p-a-Si:H layer with the ratio of $SiH_4$ : $B_2H_6$ : $H_2$ = 30 : 30 : 120, at $200^{\circ}C$, 50 W, 0.2 Torr for 30 minutes, and for ${\mu}c$-Si:H intrinsic layer, $SiH_4$ : $H_2$ = 10 : 300, at $200^{\circ}C$, 30 W, 0.5 Torr for 60 minutes, 2 cm $\times$ 2 cm size wafers were used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 20 ~ 27 % of power, 150 ~ 160 kHz, 20 ~ 50 mm/s of marking speed, and $10\;{\sim}\;50 {\mu}m$ spacing with continuous wave mode of scanner lens showed the correlation between lifetime and sheet resistance as $100\;{\Omega}/sq$ and $11.8\;{\mu}s$ vs. $17\;{\Omega}/sq$ and $8.2\;{\mu}s$. Comparing to the singly deposited p-a-Si:H layer case, the additional ${\mu}c$-Si:H layer for doping resulted in no trade-offs, but showed slight improvement of both lifetime and sheet resistance, however sheet resistance might be confined by the additional intrinsic layer. This might come from the ineffective crystallization of amorphous silicon layer. For the additional layer case, lifetime and sheet resistance were measured as $84.8\;{\Omega}/sq$ and $11.09\;{\mu}s$ vs. $79.8\;{\Omega}/sq$ and $11.93\;{\mu}s$. The co-existence of $n^+$layeronthesamesurfaceandeliminating the laser damage should be taken into account for an IBC solar cell structure. Heavily doped uniform boron layer by fiber laser brings not only basic and essential conditions for the beginning step of IBC solar cell fabrication processes, but also the controllable doping concentration and depth that can be established according to the deposition conditions of layers.

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비정질 Ba-Ferrite로부터 추출한 BaFe12O19 입자의 특성 (Characteristics of BaFe12O19 Particles Extracted from Amorphous Ba-Ferrite)

  • 김태옥;오영우;박효열;강원호
    • 한국세라믹학회지
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    • 제24권6호
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    • pp.553-560
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    • 1987
  • Amorphous ferrites with composition B2O3-mBaO-nFe2O3 were prepared by an ultra rapidquenching technique. X-ray patterns and SEM reveal the products to be amrophous at room temperature. BaFe12O19 fine particles extracted from amorphous Ba-ferrites which additived Al2O3, SiO2, TiO2 and CoO have narrow size distribution, average 0.2$\mu\textrm{m}$, and coercive force, average 1400 Oe, increased with increasing TiO2 amounts. The obtained BeFe12O19 fine particles would be appreciated as perpendicular magnetic recording media.

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아몰퍼스 자왜 와이어의 센싱기능에 관한 연구 (A Study on the Sensing Function of Amorphous Magnetostrictive Wire)

  • 조남희;신용진;서강수;임재근;문현욱
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 추계학술대회 논문집
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    • pp.89-92
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    • 1996
  • In this paper, we mention the study on the sensing function of amorphous magneto- striction wire with about 125${\mu}{\textrm}{m}$$\Phi$ in diameter. The wire in fabricated by using injection and quenching method under the high speed rotating water flow. The wire\`s compotion is (Fe$_{75}$ $Co_{25}$)$_{77}$Si$_{8}$B$_{15}$ , and generates sharp Matteucci voltage by large Barkhausen jump effect even the weak magnetic field. In this study, we don\`t use pick-up coil. Instead, we apply external magnetic field of 3.6Oe in the direction orthogonal to the wire. Then, we detect Matteucci voltage of 1.lmV to both side of 20cm amorphous-wire. Thus, we find that the fabricated wire has the function necessary as the high sensitive sensor material.l.al.l.

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LOW TEMPERATURE DIAMOND GROWTH USING MICROWAVE PLASMA CVD

  • Sakamoto, Yukihiro;Takaya, Matsufumi;Shinohara, Kibatsu
    • 한국표면공학회지
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    • 제29권5호
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    • pp.487-493
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    • 1996
  • Diamond films were grown at lower temperatures (630-813K) on Si, Al (1100P), and Al-Si(8A, 8B, BC) alloy substrates using improved microwave plasma CVD apparatus in a mixed methane and hydrogen plasma. Improved microwave plasma CVD apparatus equipped water cooled substrate holder and the substrates were set up lower position than bottom line of the applicator waveguide. When the methane concentration was high and growth was conducted at lower pressures the diamond films were synthesized. Moreover the deposits on the scratched substrates formed flat surfaces consisting of fine grains. XRD results, the deposits were identified to cubic diamond. An analysis using Raman spectroscopy, further confirmed that diamond films deposited on the Si substrates were high quality. The deposits on the Al substrates, in contrast, contained amorphous carbon. While the quality of the deposits on the Al-Si substrates were differed with the substrate alloys.

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