• 한국자기학회:학술대회 개요집
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• 한국자기학회 2000년도 International Symposium on Magnetics The 2000 Fall Conference
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• pp.506-507
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• 2000

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2016년도 임시총회 및 하계학술연구발표회
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• pp.95-96
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• 2016

• 한국자기학회지
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• 제8권1호
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• pp.21-26
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• 1998

온도에 따른 비정질 금속 Co66Fe4Ni1B14Si15의 자기 임피던스의 변화를 저온 장치를 써서 시료의 온도를 10K∼300K까지 변화시키면서 측정하였다. 이때, 시료에 겉어준 교류전류를 10mA로 고정시키고 주파수를 100KHz에서 10MHz 까지 변화시켰다. MIR (Magneto-Impedance Ratio)은 온도가 증가함에 따라 급격히 증가하였으며, MIR(T)≡MIR(0)exp(cT2)의 관계식으로 나타났다. 상온에서 측정한 MIR 값은 측정 주파수내에서 10K에서의 값보다 2∼3배 크게 나타났다. 이 결과는 MI 온도 효과를 이용한 온도 센서로서의 가능성을 제시한다. MIR 곡선의 모양은 온도의 증가에 따라 큰 변화가 없었으며 MIR은 주파수 증가에 따라 커지면서 MIR 곡선의 모양이 퍼지는 전형적인 경향을 나타냈다.

• 한국자기학회지
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• 제2권2호
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• pp.91-98
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• 1992

$Co_{67}Fe_{4.5}Nb_{2}Si_{10}B_{15}$ 비정질합금리본에서 2단 어닐링이 자기특성에 미치는 영향을 조사 하였다. 고온인 $480^{\circ}C$ 이상에서 20분간 1단 어닐링한 리본을 저온인 $310^{\circ}C$에서 2시간 동안 2단으로 진공어닐링한 결과 보자력과 각형비는 1단 어닐링한 경우와 거의 비슷한 값들을 나타내었으나, 직류 및 교류투자율은 1단 어닐링에 비해 현저히 높아졌다. 2단 어닐링시 직류 및 1 kHz에서의 교류투자율의 최대치는 각각 약 290,000과 41,000으로서 1단 어닐링에 비해 30% 이상 증가하였다. 어닐링온도에 따른 자성의 변화는 3단계로 나누어 내부응력, 자구크기, cluster 및 결정상의 변화를 주요 요인으로 하여 고찰하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.190-191
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• 1994

In this paper, We study on the fabrication of amorphous this film of zeromagnetostriction material and the magnetic properties. This films are fabricated by using sputtering method with input power of 400∼607[W], Ar gas pressure of 3∼ 9[mTorr] and target composition of Fe$\sub$4.7/ Co$\sub$74.3/Si$_2$B$\sub$19/. Sample this films with diameter of 14[mm ] and thickness of 27-30[$\mu\textrm{m}$] were obtained through experiments. When we analyzed the magnetic properties before and after annealing with sample thin films, we confirmed that magnetic domain wall amorphous thin films consisted for Neel magnetic domain wall with the width of about 1[$\mu\textrm{m}$].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 춘계학술대회 논문집
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• pp.149-151
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• 1994

This thesis describes the effect of heat treatment on the magnetic properties of Co-bsaed Amorphous. A sample was chosen as basic composition with Co$\_$82//Si$\_$2//B$\_$16/ of zero magnetostriction. It was made by single roll method with quartz orifice 0.5[mmø], Ar gas pressure 0.6 [kg/cm$^2$] and roll speed 28 (m/sec) and atmosphere is ,Ar gas. We obtained the sample of width 2.4(mm), thickness 45[$\mu\textrm{m}$]. Made sample annealed for the improvement of magnetic propertics at at annealing temperature 325,350,375 and 400$^{\circ}C$ and annealing time 15, 30, 45, 60 and 120min respectiveily. Amorphous ribbon of co-based showed high permeab- ility ${\mu}$=8000∼14000, and became improvement of magnetic properties according to anneal ins temperature and time. Especially. Amorphous sample at 325$^{\circ}C$ ,45min appearanced high permeability ${\mu}$=13, 589 at frequency f= 100Hz. and loss factor was reduced at low frequency with rising anneal ins ti me and temperature more annealed sample than basic sample.

• 한국재료학회지
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• 제7권9호
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• pp.728-732
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• 1997

비정질 금속 $Co_{66}$F $e_{4}$Ni $B_{14}$S $i_{15}$ 의 표면층 제거에 대한 자기임피턴스 효과는 시료의 길이방향에 평행한 일축자기장에 대하여 측정하였다. MIR(Magnetoimpedance Ratios)은 비정질 금속의 두께가 얇아짐에 따라 감소하고, 전류에 비례하여 증가하는 경향을 나타내었다. 인가전류 주파수에 대한 MIR과 자기장의 감도는 모든 시료에서 주파수에 비례하여 증가하며 수 MHz 부근에서 최대값을 가지고 점차 감소하는 경향을 나타내었다. 시료의 표면층제거에 기인한 이방성자기장의 변화는 MI $R_{Max}$을 나타내는 외부 자기장을 감소시키지만, MIR은 표면층 제거에 따른 부피효과에 기인하여 감소하였다....

• 한국표면공학회지
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• 제34권5호
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• pp.503-509
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• 2001

Thin films of hydrogenated amorphous silicon (a-Si : H) and hydrogenated amorphous silicon carbide (a-SiC:H) of different compositions were deposited on Si(100) wafer and glass by RF plasma-enhanced chemical vapor deposition (RF-PECVD). In the present work, we have investigated the effects of the RF power on the properties, such as optical band gap, transmittance and crystallinity. The Raman data show that the a-Si:H material consists of an amorphous and crystalline phase for the co-presence of two peaks centered at 480 and $520 cm^{-1}$ . The UV-VIS data suggested that the optical energy band gap ($E_{g}$ ) is not changed effectively with RF power and the obtained $E_{g}$(1.80eV) of the $\mu$c-Si:H thin film has almost the same value of a-Si:H thin film (1.75eV), indicating that the crystallity of hydrogenated amorphous silicon thin film can mainly not affected to their optical properties. However, the experimental results have shown that$ E_{g}$ of the a-SiC:H thin films changed little on the annealing temperature while $E_{g}$ increased with the RF power. The Raman spectrum of the a-SiC:H thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs.

• 한국표면공학회지
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• 제50권3호
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• pp.177-182
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• 2017

The properties of electroless Ni-B thin film on diamond powder with different parameters (temperature, pH, surfactant etc.) were studied. The surface morphology, structure and composition distribution of the Ni-B film were observed by field effect scanning electron microscope (FE-SEM), energy-dispersive spectrometer (EDS), X-ray diffraction (XRD) and Auger electron spectroscopy (AES). The growth rate of Ni-B film was increased with increase of bath temperature. The B content in Ni-B film was reduced with increase of bath pH. As a result the structure of Ni-B film was changed from amorphous to crystalline structure. The PVP in solution plays multi-functional roles as a dispersant and a stabilizer. The Ni-B film deposited with adding 0.1 mM-PVP was strongly introduced an amorphous structure with higher B content (25 at.%). Also the crystallite size of Ni-B film was reduced from 12.7 nm to 5.4 nm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.27-30
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• 1996

In this paper, we prove through the experiments the possibility that Co-amorphous magnetic films can be used as high sensibility materials. We fabricate amorphous film of Fe$\sub$4.7/Co$\sub$74.3/Si$_2$B$\sub$19/ by using sputtering method at high frequency. Then, we not only measure the magnetic Properties of the annealed samples, but also observe the magnetic domain by using an Kerr effect optical-microscope. As the result, we find that the samples have high sensibility