• Journal of the Korean Ceramic Society
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• v.24 no.1
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• pp.23-32
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• 1987

Synthesis of high purity ultrafine Si3N4 and ${\beta}$-Sialon powders was investigated via the simultaneous reduction and nitriding of amorphous SiO2, SiO2-Al2O3 system prepaerd by hydrolysis of alkoxides, using carbonablack as a reducing agent. In Si(OC2H5)4-C2H5 OH-H2 O-NH4OH system, hydrolysis rate increased with increasing reaction temperature and pH. Pure ${\alpha}$-Si3N4 was formed at 1350$^{\circ}C$ for 5 hrs in N2 atmosphere. In Si(OC2H5)4-Al(OC3H7)3-C6H6-H2 O-NH4OH system, weight loss increased as Si/Al ratio decreased. Single phase ${\beta}$-Sialon consisted of Si/Al=2 was formed at 1350$^{\circ}C$ in N2 and minor phases of ${\alpha}$-Si3N4, AIN, and X-phase were existed besides theSialon phase at other Si/Al ratios. The Si3N4 and Sialon powders synthesized from alkoxides consisted of uniform find particles of 0.05-0.2$\mu\textrm{m}$ in diameter, respectively.

• Korean Journal of Materials Research
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• v.11 no.11
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• pp.978-985
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• 2001

The amorphous alumina was obtained by flash calcination of Bayer gibbsite[$Al(OH)_3$aluminum trihydroxide]. Rehydration and pore characteristics of $r-A1_2O_3$ prepared from rehydrated amorphous alumina were investigated. Crystal phases of pseudo-boehmite and bayerite were changed when amorphous alumina was hydrated at various conditions such as time, the ratio of water/alumina and pH. Specific surface areas and pore volumes of $r- A1_{2O}_3$ were influenced by the reaction time, water/alumina and PH of rehydration. The total pore volume of $r-A1_{2O}_3$increases with increasing the reaction time and ratio of water/alumina. Especially, the pure pseudo-boehmite of single phase could be prepared, when amorphous alumina was hydrated in the range of pH 6.5-8.0 in water/alumina= 10 at $90^{\circ}C$ for 7hr. The $r-Al_{2O}_3$, obtained by calcination of the prepared pseudo-boehmite at $500^{\circ}C$ for 2hrs, is characterized by the specific surface area of $265m^2$/g, total pore volume of $0.75cm^3$/g.

• Journal of the Korean earth science society
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• v.22 no.3
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• pp.208-222
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• 2001

Geochemical investigations on suspended amorphous iron oxide material from the Kwangyang gold mine and its surrounding area, Cheonnam, Korea have been carried out. The sediments samples were collected from 11 location along Kwangyang mine area and were air dried and sieved to -80 mesh. These samples consist mainly of iron, silicon and alumina. The Fe$_2$O$_3$ contents ranges from 17.9 wt.% to 72.3 wt.%. The content of Fe$_2$O$_3$ increase with decreasing Si, Al, Mg, Na, K, Mn, and Ti, whereas the contents of Te, Au, Ga, Bi, Cd, Hg, Sb, and Se increase in the amorphous stream sediments. Amorphous stream sediments have been severely enriched for As (up to 54.9 ppm), Bi (up to 3.77 ppm), Cd (up to 3.65 ppm), Hg (up to 64 ppm), Sb (up to 10.1 ppm), Cu (up to 37.1 ppm), Mo (up to 8.86 ppm), Pb (up to 9.45 ppm) and Zn (up to 29.7 ppm). At the upstream site, the Au content (up to 4.4 ppm) in the amorphous stream sediments are relatively high but those contents decrease with distance of mine location. The content of Ag (up to 0.24 ppm) were low in upstream site but those contents increase significantly in the downstream sites. The X-ray diffraction patterns of the samples have virtually no sharp and discrete peaks, indicating that some samples are amorphous or poorly-ordered. The quartz, goethite, kaolinite and illite were associated in amorphous stream sediments. The infrared spectra for amorphous stream sediments show major absorption bands due to OH stretching, adsorbed molecular water, sulfate and Fe-O stretching, respectively.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.11-14
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• 2022

In this work, we evaluated the Al₂O₃ film, which was deposited by atomic layer deposition, degraded by exposure to harsh environments. The Al₂O₃ films deposited by atomic layer deposition have long been used as a gas diffusion barrier that satisfies barrier requirements for device reliability. To investigate the barrier and mechanical performance of the Al₂O₃ film with increasing temperature and relative humidity, the properties of the degraded Al₂O₃ film exposed to the harsh environment were evaluated using electrical calcium test and tensile test. As a result, the water vapor transmission rate of Al₂O₃ films stored in harsh environments has fallen to a level that is difficult to utilize as a barrier film. Through water vapor transmission rate measurements, it can be seen that the water vapor transmission rate changes can be significant, and the environment-induced degradation is fatal to the Al₂O₃ thin films. In addition, the surface roughness and porosity of the degraded Al₂O₃ are significantly increased as the environment becomes severer. the degradation of elongation is caused by the stress concentration at valleys of rough surface and pores generated by the harsh environment. Becaused the harsh envronment-induced degradation convert amorphous Al₂O₃ to crystalline structure, these encapsulation properties of the Al₂O₃ film was easily degraded.

• Journal of the Korean institute of surface engineering
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• v.34 no.2
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• pp.135-141
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• 2001

Arc-melted Ti-6Al-4V, Ti-4Fe and Ti-(1,2) Si alloys were oxidized at 700, 800, 900 and $1000^{\circ}C$ in air. The oxidation resistance of Ti-4Fe was comparable to that of Ti-6Al-4V, while the oxidation resistance of Ti-(1,2) Si was superior to that of Ti-6Al-4V. Ti-2Si displayed the best oxidation resistance among the four alloys, but failed after oxidation at $1000^{\circ}C$ for 17h. The oxide scale formed on Ti-6Al-4V, Ti-4Fe and Ti-(1,2)Si consisted of ($TiO_2$ and a small amount of $Al_2$$O_3$), ($TiO_2$ and a small amount of dissolved iron), and ($TiO_2$ plus a small concentration of amorphous $SiO_2$), respectively. The oxide grains of the surface scale of the four alloys were generally fine and round.

• Korean Journal of Materials Research
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• v.29 no.12
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• pp.757-763
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• 2019

A stacked high-voltage (900 V) Al electrolytic capacitor made with ZrO₂ coated anode foils, which has not been studied so far, is realized and the effects of Zr-Al-O composite layer on the electric properties are discussed. Etched Al foils coated with ZrO₂ sol are anodized in 2-methyl-1,3-propanediol (MPD)-boric acid electrolyte. The anodized Al foils are assembled with stacked structure to prepare the capacitor. The capacitance and dissipation factor of the capacitor with ZrO₂ coated anode foils increase by 41 % and decrease by 50 %, respectively, in comparison with those of Al anode foils. Zr-Al-O composite dielectric layer is formed between separate crystalline ZrO₂ with high dielectric constant and amorphous Al₂O₃ with high ionic resistivity. This work suggests that the formation of a composite layer by coating valve metal oxide on etched Al foil surface and anodizing it in MPD-boric acid electrolyte is a promising approach for high voltage and volume efficiency of capacitors.

• Journal of the Korean Ceramic Society
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• v.17 no.2
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• pp.96-100
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• 1980

The castable refractory, CaO.$2Al_2O_3$ is a useful alumina cement for iron, steel and cement for iron, steel and cement industries, however it is difficult to produce CaO.$2Al_2O_3$because of its high melting point(180$0^{\circ}C$) and narrow firing range. In this study, the coprecipitation method was used to produce CaO.$2Al_2O_3$ for lower temperature firing . This method involved the titration of mixed solution of calicum and aluminate which extracted from domestic kaolin with $NH4_OH$ solution under blowing $CO_2$ gas into the solution. The coprecipitate and its clacined products were analyzed by X-ray diffraction and DTA. The calcined products fired between 400 and 90$0^{\circ}C$ were amorphous, but at 100$0^{\circ}C$ the coprecipitate was converted into one compound, CaO$2Al_2O_3$. From those experimental results, it was found that we could synthesizze CaO.$2Al_2O_3$ at about 100$0^{\circ}C$ which is lower than conventional firing temperature by around 80$0^{\circ}C$. The refractoriness of this alumina cement was SK 34 and the compressive strength ( 1 day) was about 250kg/$\textrm{cm}^2$.

• Applied Chemistry for Engineering
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• v.5 no.4
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• pp.597-608
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• 1994

A new process for the production of high purity ${\alpha}-Al_2O_3$ from ammonium aluminium sulfate solution abtained through the sulfation of low grade bauxite ore with $(NH_4)_2SO_4$, and leaching of the sulfated product was investigated. This process is consisted of solvent extraction for Fe component removal from ammonium aluminum sulfate solution and homogeneous precipitation of Al containing precipitate from the refined ammonium aluminium sulfate solution by using urea as precipitator. The optimum conditions of solvent extraction with Alamine 336 as extractant were shaking time of 4min, organic phase ratio to aqueous phase of 0.25. The types of precipitation products from this precipitation were amorphous alumina gel, pseudo-boehmite and crystalline boehmite in the lower temperature of $100^{\circ}C$, in the range from $125^{\circ}C$ to $150^{\circ}C$, and above $150^{\circ}C$, respectively. And also amorphous alumina gel hydrate in $1000^{\circ}C$ and crystalline boehmite in $1250^{\circ}C$ were tranfered to ${\alpha}-Al_2O_3$, respectively. This alumina was identified as ${\alpha}-Al_2O_3$ of purity 99.7%.

• Applied Microscopy
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• v.51
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• pp.1.1-1.2
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• 2021

We demonstrate a fabrication of an atomically controlled single-crystal heart-shaped nanostructure using a convergent electron beam in a scanning transmission electron microscope. The delicately controlled e-beam enable epitaxial crystallization of perovskite oxide LaAlO₃ grown out of the relative conductive interface (i.e. 2 dimensional electron gas) between amorphous LaAlO₃/crystalline SrTiO₃.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.267-270
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• 2003

We have studied the interfacial diffusion phenomena and the role of ${\alpha}-Al_2O_3$ buffer layer as a diffusion barrier in the $Ba-ferrite/SiO_2$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite ($1900-{\AA}-thick)/SiO_2$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_2O_3$ buffer layer ($110-{\AA}-thick$) in the interface of $Ba-ferrite/SiO_2$ thin film. During the annealing of $Ba-ferrite/{\alpha}-Al_2O_3/SiO_2$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The smooth interface of the film was also clearly shown by the cross-sectional FESEM. The magnetic properties, such as saturation magnetization 3nd intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_2O_3$ buffer layer. Our study suggests that the ${\alpha}-Al_2O_3$ buffer layer act as a useful interfacial diffusion barrier in the $Ba-ferrite/SiO_2$ thin films.