• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04a
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• pp.72-73
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• 2009

In this study, we fabricated of pentacene organic thin film trasistor(OTFT), which used aluminum oxide for the gate insulator on glass substrate. Aluminum oxide for OTFTs was deposited on the gate layer by E-beam evaporation. aluminum oxide fabricated various deposition rate. In this case of the deposition rate of $0.1\;{\AA}$, the fabricated aluminum oxide gate insulator OTFT showed a threshold voltage of -1.36V, an on/off current ratio of $1.9{\times}l0^3$ and field effect mobility $0.023\;cm^2/V_s$.

• Journal of Electrochemical Science and Technology
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• v.3 no.1
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• pp.35-43
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• 2012

Highly ordered and perforated anodic aluminum oxide membranes were prepared by anodic oxidation and subsequent removal of the barrier layer. By using these homemade anodic aluminum oxide membranes as templates, metal selenide nanowires and nanotubes were synthesized. The structure and composition of these one-dimensional nanomaterials were studied by field emission scanning electron microscopy as well as transmission electron microscopy and energy dispersive X-ray spectroscopy. The growth process of metal selenide inside anodic aluminum oxide channel was traced by investigating the series of samples using scanning electron microscopy after reacting for different times. Straight and dense copper selenide and silver selenide nanowires with a uniform diameter were successfully prepared. In case of nickel selenide, nanotubes were preferentially formed. Phase and crystallinity of the nanostructured materials were also investigated.

• Journal of the Korean institute of surface engineering
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• v.53 no.4
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• pp.144-152
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• 2020

In the manufacturing process of joining of aluminum alloy and polymer, the strength of the metal-polymer joining is greatly influenced by the nanostructure of the oxide film. In this study, we investigated the dependence of joining strength on the thickness, structure, pore formation and surface roughness of the formed film. After the two-step anodization process, the surface oxide layer became thinner and rougher resulting in higher joining strength with the polymer. More specifically, after the two-step anodization, the surface roughness, Ra increased from 2.3 to 3.2 ㎛ with pore of three-dimensional (3D) nanostructure, and the thickness of the oxide film was thinned from 350 to 250 nm. Accordingly, the joining strength of the aluminum alloy with polymer increased from 23 to 30 MPa.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.329-334
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• 2001

Microstructures of barrier-type oxide layers on aluminum was studied by XRD, TEM and RBS. Fer formation of oxide layer. aluminum was anodized in a boric acid solution. The thickness of the oxide film subjected to applied voltage increased linearly at ratio of 1.54nm/V. For oxide layer anodized at 300V, amorphous structure of oxide layer was not transformed after heat treatment at 50$0^{\circ}C$ , while for oxide layers anodized at higher voltages the amorphous structure crystallized into a ${\gamma}$-alumina without any heat treatment. It was also found that the amorphous structure of oxide layer formed at 100V transformed into crystalline structure by electron irradiation. The structure was identified as ${\gamma}$-alumina.

• Corrosion Science and Technology
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• v.21 no.6
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• pp.487-494
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• 2022

Anodizing is a typical electrochemical surface treatment method that can improve the corrosion and insulating properties of aluminum alloys. The anodization process can obtain a dense structure. It can be used to artificially grow the thickness of an anodization film. Aluminum 3003 alloy used in this study is the most commonly used alloy for batteries due to its high strength and excellent formability as well as its weldability and corrosion resistance. Aluminum 3003 alloy was anodized at 0 ℃ with 0.3 M oxalic acid at 20 V, 40 V, or 60 V for 1 hour, 6 hours, or 12 hours. As a result of analyzing the composition of each specimen with an Energy Dispersive Spectrometer (EDS), aluminum was converted into an oxide film. The thickness of the formed anodization film increased when the applied voltage and anodization time increased. High corrosion potential values and low corrosion current density values were observed for the thickest oxide layer. The anodization film formed by anodization acted as a protective layer. The electrical resistance increased as the applied voltage and anodization time increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.229-229
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• 2012

Adhesion of Copper film on the aluminum oxide layer formed by anodizing an aluminum plate was enhanced by applying ion beam mixing method. Forming an conductive metal layer on the insulating oxide surface without using adhesive epoxy bonds provide metal-PCB(Printed Circuit Board) better thermal conductivities, which are crucial for high power electric device working condition. IBM (Ion beam mixing) process consists of 3 steps; a preliminary deposition of an film, ion beam bombardment, and additional deposition of film with a proper thickness for the application. For the deposition of the films, e-beam evaporation method was used and 70 KeV N-ions were applied for the ion beam bombardment in this work. Adhesions of the interfaces measured by the adhesive tape test and the pull-off test showed an enhancement with the aid of IBM and the adhesion of the ion-beam-mixed films were commercially acceptable. The mixing feature of the atoms near the interface was studied by scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy.

• Journal of Information Display
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• v.8 no.4
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• pp.19-22
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• 2007

A new front plate structure of ac-PDP using fence-type aluminum electrode coated with anodic aluminum oxide was investigated. In this structure, ITO and glass dielectric layer were eliminated and expensive Ag BUS electrode was replaced with aluminum. Test panels were prepared using the new structure and their luminance and discharge characteristics were examined. These results indicate that the new structure provide a new way of cost reduction and enhancement of performance of ac-PDPs

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.127-130
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• 2007

A new front plate structure of ac-PDP was explored using fence-type aluminum electrode coated with anodic aluminum oxide.[1] In this structure, ITO and glass dielectric layer were eliminated and expensive Ag BUS electrode was replaced with aluminum. Test panels were prepared using the new structure and their luminance and discharge characteristics were examined. These results indicate that the new structure provide a new way of cost reduction and enhancement of performance of ac-PDPs

• Journal of the Korean Applied Science and Technology
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• v.16 no.4
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• pp.307-311
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• 1999

Interfacial properties of electrode and organic thin layer is one of the most important factor in performing a Light Emitting Diodes(LED). Phthalocyanine copper was used as a buffer layer to improve interface characteristic, so that device efficiency was improved. In this study, LEDs were fabricated as like structures of Indium-Tin-Oxide (ITO) / N,N' -Diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) / 8-Hydroxyquinoline aluminum(Alq) / Aluminum(Al) and Indium-Tin-Oxide(ITO) / N,N'-Diphenyl-N,N' -di(m-tolyl)-benzidine(TPD) / 2-(4-Biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole(PBD) / Aluminum(Al). In these devices, CuPC was layered at electrode/organic layer interface. As position is changing and thickness is changing, devices showed characteristic luminescence efficiency and luminescence inensity respectively. We showed in this study that luminescence efficiency was improved with CuPC layer in LEDs. The efficiency of device with layer CuPC is higher than that of 2 layer CuPC. However, the luminescence of 2 layer CuPC device got higher value.

• Journal of Welding and Joining
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• v.32 no.1
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• pp.108-111
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• 2014

Low arc weldability of aluminum alloy is enhanced by applying variable polarity TIG and the result is theoretically investigated to figure out the mechanism. Conventionally, it is well known fact that DCEP (reverse polarity) arc is effective on aluminum welding. The reason is due to oxide layer removal by plasma ion bombardment and therefore it is named as cleaning effect. Another fact of polarity characteristic is that DCEN shows higher heat input efficiency therefore conventional variable polarity arc used to apply DCEP portion as small as possible. However, higher DCEP portion shows bigger weldment in this research and it is explained by adopting a theory of arc concentration on oxide layer with tunneling effect which was not clearly mentioned before in several variable polarity TIG welding research. Disagreement between variable polarity TIG welding result and conventional arc polarity theory is rationally explained for the first time with help of electron emission theory.