• 제목/요약/키워드: aluminum oxide layer

검색결과 256건 처리시간 0.021초

선택적 산화 알루미늄 기판을 이용한 소형 2.5 GHz 8 W GaN HEMT 전력 증폭기 모듈 (A Miniaturized 2.5 GHz 8 W GaN HEMT Power Amplifier Module Using Selectively Anodized Aluminum Oxide Substrate)

  • 정해창;오현석;염경환
    • 한국전자파학회논문지
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    • 제22권12호
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    • pp.1069-1077
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    • 2011
  • 본 논문에서는 선택적 산화 알루미늄(SAAO: Selectively Anodized Aluminum Oxide) 기판을 이용하여 2.5 GHz 8 W급 소형 GaN HEMT 전력 증폭기 모듈을 설계, 제작하였다. SAAO 기판 공정은 최근 Wavenics사에서 제안한 특허 기술로서, 알루미늄을 웨이퍼로 이용한다. 본 연구에 사용된 능동 소자는 최근 발표된 TriQuint사의 칩 형태 의 GaN HEMT이다. 최적의 임피던스는 수동 조정 소자가 내장된 지그를 사용하여 실험적으로 결정하였다. 결정된 임피던스를 이용하여, 입 출력 임피던스 정합 회로를 EM co-시뮬레이션을 이용하여 F급으로 설계를 수행하였으며, SAAO 기판에 구현하였다. 이때, 소형의 패키지(모듈)에 집적하기 위하여 인덕터와 커패시터는 각각 spiral inductor, single layer capacitor를 사용하였다. 소형으로($4.4{\times}4.4\;mm^2$) 패키지된 전력 증폭기 모듈의 경우, 출력은 8 W, 효율은 40 % 그리고 2차 및 3차 고조파에 대한 고조파 억제는 30 dBc 이상의 특성을 보였다.

알루미늄합금 재료의 산화막 형성이 피로거동에 미치는 영향 (Effect of Oxide Film Formation on the Fatigue Behavior of Aluminum Alloy)

  • 김종천;정성균
    • 대한기계학회논문집A
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    • 제36권4호
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    • pp.421-428
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    • 2012
  • 본 논문에서는 알루미늄 7075-T6 재료의 부식 기간별 표면 산화막 형성이 피로거동에 미치는 영향에 대해 연구하였다. 사용된 알루미늄 재료는 부식에 대한 부동태화 현상으로 부식저항 특성이 높은 금속으로 알려져 있다. 알루미늄 합금은 다른 재료에 비해 가볍고 강한 재료 특성 때문에 항공기 부품 산업과 같은 다양한 산업분야에서 널리 사용되고 있다. 때문에 부식에 대한 재료의 피로거동 특성과 부식에 대한 부동태화 특성에 대한 연구가 요구된다. 4절점 회전 굽힘 시험기를 사용하여 부식 기간별 재료의 피로거동 특성을 확인하였고, 표면 거칠기를 측정하여 부식 기간별 알루미늄 재료의 표면 부식 정도를 평가하였다. 또한 전자주사현미경을 통해 파단면 분석 및 재료 표면에 형성된 산화막을 측정하였다. 실험결과 초기 부식 4주 동안은 부식이 활발히 진행되어 피로수명은 크게 감소하고 표면 거칠기는 증가하였다. 하지만 4주 이후부터 재료의 부동태화 현상으로 부식 반응이 둔화되는 경향을 보였다. 전자주사현미경을 통한 분석에서도 표면 산화막의 성장이 4주 이후부터 둔화되어 재료 표면의 산화막이 보호층 역할을 하여 더 이상의 부식진행을 방지한다는 결론은 얻었다.

Corrosion Properties of Dissimilar Friction Stir Welded 6061 Aluminum and HT590 Steel

  • Seo, Bosung;Song, Kuk Hyun;Park, Kwangsuk
    • Metals and materials international
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    • 제24권6호
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    • pp.1232-1240
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    • 2018
  • Corrosion properties of dissimilar friction stir welded 6061 aluminum and HT590 steel were investigated to understand effects of galvanic corrosion. As cathode when coupled, HT590 was cathodically protected. However, the passivation of AA6061 made the aluminum alloy cathode temporarily, which leaded to corrosion of HT590. From the EIS analysis showing Warburg diffusion plot in Nyquist plots, it can be inferred that the stable passivation layer was formed on AA6061. However, the weld as well as HT590 did not show Warburg diffusion plot in Nyquist plots, suggesting that there was no barrier for corrosion or even if it exists, the barrier had no function for preventing and/or retarding charge transport through the passivation layer. The open circuit potential measurements showed that the potential of the weld was similar to that of HT590, which lied in the pitting region for AA6061, making the aluminum alloy part of the weld keep corrosion state. That resulted in the cracked oxide film on AA6061 of the weld, which could not play a role of corrosion barrier.

Impedance investigation of the surface film formed on aluminum alloy exposed to nuclear reactor emergency core coolant

  • Junlin Huang;Derek Lister;Xiaoliang Zhu;Shunsuke Uchida;Qinglan Xu
    • Nuclear Engineering and Technology
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    • 제55권4호
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    • pp.1518-1527
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    • 2023
  • A method was proposed for in-situ evaluating the thickness and resistivity of the oxide/hydroxide film formed on the surface of aluminum alloy exposed to sump water formed in the containment after a loss-of-coolant accident. The evaluation entailed fitting a model for the film impedance, which has film thickness and other variables describing the resistivity profile of the film along its thickness direction as fitting parameters, to the practically measured electrochemical impedance data. The obtained resistivity profiles implied that the films formed at pHs25℃ 7, 8, 9, 10, and 11 all had a duplex structure; compared to the outer layer in contact with the solution, the inner layer of the film had a much higher resistivity and was inferred to be denser and provide most of the protectiveness of the film. Both the thickness and the total resistance of the film decreased with the increasing solution pH25℃, suggesting that the films formed in more alkaline solutions had less protectiveness against corrosion, consistent with the increasing aluminum alloy corrosion rates previously identified.

다공성 알루미늄 양극산화 피막에 도금된 철 및 코박트의 자기적 성질 (Magnetic Properties of Electrodeposited Iron and Cobalt on Porous Aluminum Oxide Layer)

  • 김기호;강탁;손헌준
    • 한국표면공학회지
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    • 제23권3호
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    • pp.150-159
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    • 1990
  • The magnetic properties of electrodeposited iron and cobalt films on porous aluminum oxide film were examined. There exists perpendicular magnetic anisotropy due to the shape anisotropy. The coercivity and squareness ratio of films were strongly dependent on deposited particle diameter. The effect of packing fraction on squareness ratio was also apprecible. Unlike the iron-deposited films, the magnetic properties of cobalt films were changed by preferred orientation because of it's large crystal ansotropy constant.(about 10 times of Fe) The Fe deposited films were found to be more suitable for perpendicular magenetic recording media bacause perpendicular coercivity, squareness ratio and the ratio of perpendicular coercivity to horizontal ones of iron films are greater than those of cobalt films.

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단백질 기반 Oxygen High Barrier 소재의 전과정평가를 통한 환경 영향 측정 (Environmental Evaluation of Protein Based Oxygen High Barrier Film Using Life Cycle Assessment)

  • 강동호;신양재
    • 한국포장학회지
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    • 제25권1호
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    • pp.1-10
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    • 2019
  • 이번 연구에서는 식품 포장재로 많이 활용하고 있는 산소 고차단성 필름 두 종류의 환경 영향을 평가하는 것이었다. Table 4의 경우 환경 영향 모델에 따라 계산된 Traditional film과 New film의 각 환경 영향 범주 별 비교 값 및 이러한 차이를 보인 가장 영향력 있는 공정을 설명하였다.

보호용 실리콘 산화막을 이용하여 제조된 $Al_2O_3$ 예비층이 초박막 ${\gamma}-Al_2O_3$ 에피텍시의 성장에 미치는 영향 (Effect of $Al_2O_3$ pre-layers formed using protective Si-oxide layer on the growth of ultra thin ${\gamma}-Al_2O_3$ epitaxial layer)

  • 정영철;전본근;석전성
    • 센서학회지
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    • 제9권5호
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    • pp.389-395
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    • 2000
  • 본 논문에서는 보호용 실리콘 산화층과 Al 층을 이용한 $Al_2O_3$ 예비층의 형성을 제안하였다. 실리콘 기판 위의 보호용 산화막 위에 알루미늄을 증착하고 이를 $800^{\circ}C$에서 열처리함으로써 에피텍시 $Al_2O_3$ 예비층 형성시킬 수 있었다. 그리고 형성된 $Al_2O_3$ 예비층위에 ${\gamma}-Al_2O_3$ 층을 형성하였다. ${\gamma}-Al_2O_3$막 성장시 공정의 초기 상태에서 발생하는 $N_2O$ 가스에 의한 Si 기판의 식각을 $Al_2O_3$ 예비층을 이용함으로써 방지할 수 있었다. $Al_2O_3$ 예비층이 초박막 ${\gamma}-Al_2O_3$의 표면의 형태를 개선하는데 많은 효과가 있었다.

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Preparation of Al2O3 Thin Films by Atomic Layer Deposition Using Dimethylaluminum Isopropoxide and Water and Their Reaction Mechanisms

  • An, Ki-Seok;Cho, Won-Tae;Sung, Ki-Whan;Lee, Sun-Sook;Kim, Yun-Soo
    • Bulletin of the Korean Chemical Society
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    • 제24권11호
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    • pp.1659-1663
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    • 2003
  • $Al_2O_3$ thin films were grown on H-terminated Si(001) substrates using dimethylaluminum isopropoxide [DMAl: $(CH_3)_2AlOCH(CH_3)_2$], as a new Al precursor, and water by atomic layer deposition (ALD). The selflimiting ALD process by alternate surface reactions of DMAI and $H_2O$ was confirmed from measured thicknesses of the aluminum oxide films as functions of the DMAI pulse time and the number of DMAI-$H_2O$ cycles. Under optimal reaction conditions, a growth rate of ~1.06 ${\AA}$ per ALD cycle was achieved at the substrate temperature of $150\;^{\circ}C$. From a mass spectrometric study of the DMAI-$D_2O$ ALD process, it was determined that the overall binary reaction for the deposition of $Al_2O_3\;[2\;(CH_3)_2AlOCH(CH_3)_2\;+\;3\;H_2O\;{\rightarrow}\;Al_2O_3\;+\;4\;CH_4\;+\;2\;HOCH(CH_3)_2]$can be separated into the following two half-reactions: where the asterisks designate the surface species. Growth of stoichiometric $Al_2O_3$ thin films with carbon incorporation less than 1.5 atomic % was confirmed by depth profiling Auger electron spectroscopy. Atomic force microscopy images show atomically flat and uniform surfaces. X-ray photoelectron spectroscopy and cross-sectional high resolution transmission electron microscopy of an $Al_2O_3$ film indicate that there is no distinguishable interfacial Si oxide layer except that a very thin layer of aluminum silicate may have been formed between the $Al_2O_3$ film and the Si substrate. C-V measurements of an $Al_2O_3$ film showed capacitance values comparable to previously reported values.

플라즈마 전해 산화 공정을 이용한 고 실리콘 알루미늄 합금의 표면 산화막 형성 (Surface Modification of High Si Content Al Alloy by Plasma Electrolytic Oxidation)

  • 김용민;황덕영;이철원;유봉영;신동혁
    • 대한금속재료학회지
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    • 제48권1호
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    • pp.49-56
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    • 2010
  • This study investigated how the surface of Al-12wt.%Si alloy modified by the plasma electrolytic oxidation process (PEO). The PEO process was performed in an electrolyte with sodium hexametaphsphate as a conducting salt, and the effect of ammonium metavanadate on variations in the morphology of electrochemically generated oxide layers on the alloy surface was investigated. It is difficult to form a uniform passive oxide layer on Al alloys with a high Si content due to the differences in the oxidation behavior of the silicon-rich phase and the aluminum-rich phase. The oxide layer covered the entire surface of the Al-12WT.%Si alloy uniformly when ammonium metavanadate was added to the electrolyte. The oxide layer was confirmed as a mixture of $V_2O_3$ and $V_2O_5$ by XPS analysis. In addition, the oxide layer obtained by the PEO process with ammonium metavanadate exhibited a black color. Application of this surface modification method is expected to solve the problem of the lack of uniformity in the coloring of oxide layeres caused by different oxidation behaviors during a surface treatment.

Layer-by-layer 기법을 통한 Cu2(btc)3-AAO 하이브리드 분리막의 제조 (Preparation of Cu2(btc)3-AAO Hybrid Membrane by Layer-by-layer Technique)

  • 유현석;최진섭
    • 한국표면공학회지
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    • 제51권1호
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    • pp.21-26
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    • 2018
  • The $Cu_2(btc)_3$ metal-organic frameworks (MOF) coated anodic aluminum oxide (AAO) membrane was successfully prepared by layer-by-layer technique using hand spray method. It was confirmed that the $Cu_2(btc)_3$ layer, which has the pore sized in 2-3 nm, on surface of AAO exhibited the polycrystalline thin film structure by XRD analysis. More than 100 repetitive spray cycles were required to obtain more robust and thick MOFs on AAO and it was possible to uniformly coat both the top and bottom surfaces of the AAO. It should be noted that the MOFs also could be coated on surface of pores resulting in reduce the size of pore from 52 nm to 32 nm.