• Title/Summary/Keyword: aluminum oxide

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Wetting improvement of SiC/Al Metal Matrix Composite by Cu Surface Treatment (보강재에 도금된 Cu층이 Al/SiC복합재료의 젖음성에 미치는 영향)

  • Lee, Gyeong-Gu;Jo, Gyu-Jong;Lee, Do-Jae
    • Korean Journal of Materials Research
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    • v.11 no.5
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    • pp.398-404
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    • 2001
  • Effects of coating treatment of metallic Cu film on SiC for Al/SiC composite were studied. The Copper was deposited on SiC by electroless plating method. Al/sic composite was fabricated at temperature range of $670^{\circ}C$ to 90$0^{\circ}C$ under vacuum atmosphere. The wetting behavior of Al/SiC composite were analysed by SEM and XRD. The coating treatment on SiC improved wettability of Al melt on SiC considerably comparing to the non coated SiC. This improved wettability seems strongly concerned to the increase of chemical reactivity between coated layer and Al matrix. The improvement of wettability of Al melt on the Cu coated SiC was closely related to in the initial stage of reaction. The metallic film played an important role in reducing the interfacial free energy and breaking down the aluminum oxide film through the reaction with Al melt. The wetting behavior of the as-received SiC with Al melt was not uniform, indicated by the contact angles from less than $97^{\circ}$to more than $97^{\circ}$.

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Improved On-off Property of SiO2 Embedded Polyfluorene Polymer-OLED (SiO2의 첨가를 통한 Polyfluorene계 Polymer-OLED의 발광 동작 개선 가능성)

  • Jeon, Byung Joo;Kim, Hyo Jun;Kim, Jong Su;Jeong, Yong Seok
    • Journal of the Semiconductor & Display Technology
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    • v.16 no.1
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    • pp.40-44
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    • 2017
  • The effect of weak dielectric silicone dioxide($SiO_2$) embedded in polyfluorene(PFO) emitting layer of polymer-based multi structure OLED was investigated. Indium tin oxide(ITO)/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)/poly(9,9-di-n-octylfluorenyl-2,7-diyl)(PFO)/2,2,2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi)/aluminum(Al) structure OLED was fabricated by spin-coating method. Applied electric field causes some effect on $SiO_2$ in PFO layer. Thus, interaction between polymers and affected $SiO_2$ might generate electrical and luminance properties change. Experimental results, show the reduced threshold voltage of 6 V(from 23 V to 17 V). The maximum current density was rather increased from $71A/m^2$ to $610A/m^2$ and maximum brightness was also increased from $7.19cd/m^2$ to $41.03cd/m^2$, 9 and 6 times each. Additionally we obtained colour broadening result due to the increasing of blue-green band emission. Consequently we observed that electrical and luminance properties are enhanced by adding $SiO_2$ and identified the possibility of controlling the emission colour of OLED device according to colour broadening.

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Recent Trends of Friction Stir Welding of Titanium (타이타늄 소재 마찰교반용접 기술 동향)

  • Chun, Chang-Keun;Kim, Sung-Wook;Kim, Heung-Joo;Chang, Woong-Seong;Noh, Joong-Suk
    • Journal of Welding and Joining
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    • v.31 no.2
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    • pp.16-20
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    • 2013
  • Titanium and its alloys have been widely using in the various field of industry application due to high corrosion resistant properties and mechanical properties. Titanium is highly reactive in the high temperature state and the formation of titanium oxide and porosities in the nuggets of fusion welding will results in the degradation of the mechanical properties. For this reason the studies of friction stir welding for titanium have been investigated recently. The FSW zones of titanium were classified by the weld nugget (WN), the linear transition boundary (TB) and the heat affected zone (HAZ). The WN along with titanium parent was characterized by the presence of twins and dislocations. The average grain size and hardness of WN has been changed according to heat input. The grain refinement resulted from the FSW increased the hardness in the stir zone. Sound dissimilar joints between SUS 304 and CP-Ti were achieved using an advancing speed of 50 mm/min and rotation speeds in the range of 700-1100 rpm. Aluminum 1060 and titanium alloy Ti-6Al-4V plates were lap joined by friction stir welding, hence the ultimate tensile shear strength of joint reached 100% of Al 1060. Mg alloy and Ti were successfully butt joined by inserting a probe into the Mg alloy plate with slightly offsetting. But Ti-Al intermetallic compound layers formed at the interface of these joints.

Fabrication of Photo Sensitive Graphene Transistor Using Quantum Dot Coated Nano-Porous Graphene

  • ;Lee, Jae-Hyeon;Choe, Sun-Hyeong;Im, Se-Yun;Lee, Jong-Un;Bae, Yun-Gyeong;Hwang, Jong-Seung;Hwang, Seong-U;Hwang, Dong-Mok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.658-658
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    • 2013
  • Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

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Variation of the Magnetic Properties of Electrodeposited CoP Nanowire Arrays According to Their Size and Microstructure (CoP나노선재의 자기적 성질에 미치는 미세구조와 크기 효과)

  • Kim, Yi J.;Lee, Kwan H.;Jeung, Won Y.;Kim, Kwang B.
    • Journal of the Korean Electrochemical Society
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    • v.6 no.3
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    • pp.208-211
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    • 2003
  • We have investigated the dimensional and microstructural dependence of magnetic properties of CoP nano-wire arrays fabricated by electrodeposition on AAO(anodic aluminum oxide) templates with different-size nanopores. Our results indicate that the magnetic properties of nanowire arrays can be varied with their dimensions and microstructures. As for the CoP nanowire arrays with the diameter of 20nm, it was found to have the coercivity more than 2.6kOe due to the shape anisotropy and squareness(Mr/Ms) of $\~0.8$. The CoP nanowire arrays with the diameter of 200m, however, showed very different magnetic properties depending on the current densities. Nanowires fabricated at $5mA/cm^2$ had stronger tendency to have the preferred crystallographic orientation of (002) parallel to the nanowire than those fabricated at $35mA/cm^2$ These microstructural differences are the reason why CoP nanowire arrays prepared at different current densities exhibited different magnetic properties.

THE EFFECT OF SUREACE TREATMENTS ON THE REBONDED RESIN-BONDED RETAINERS

  • Kim Sang-Pil;Kang Dong-Wan
    • The Journal of Korean Academy of Prosthodontics
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    • v.40 no.6
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    • pp.590-596
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    • 2002
  • The resin : metal interface is at the basis of most bonding failures in resin-bonded prosthesis. Although debonding has been a problem with adhesive fixed partial dentures, various dentists classify them as long-term restorations. The advantages of resin-bonded fixed partial dentures include minimal tooth reduction and the possibility of rebonding. if resin-bonded protheses can be easily rebounded, it is of clinical importance to know if the lutingagents rebond as well the second time as they did originally. Several retentive systems for resin-to-metal bonding have recommended. Treatments such as electrolytic etching and silicone coating, despite the good result of bond strength, have proved to be time-consuming and technique-sensitive. Therefore a simple and more reliable method is desirable. This study evaluated the effect of metal surface treatments on the rebond strength of panavia 21 cement to a nickel-chromium(Ni-Cr) alloy. The samples were received the following surface treatments : Group No.1 (control or served as the control) treatment with sandblasting with 50um aluminum oxide and ultrasonically cleaned for 10minutes in double-deionized water, Group No.2 were no surface treatments. Group No.3 were treated with metal primer. Group No.4 were treated with sandblasting as previously described, and then metal priming. From the analysis of the results, the following conclusions were drawn. 1. Sandblasting and metal priming appears to be an effective method for treatment of metal after accidental debonding. 2. Group without surface treatment had significantly lower bond strengths compared with other groups. 3. The combination of sandblasting and metal priming may not develop superior bonding strengths compared with other techniques that used the Ni-Cr alloys. 4. Combination of cohesive and adhesive failures were the most common type observed. The results support the use of sandblasting as a viable procedure when rebonding accidentally lost adhesive partial denture. We concluded that sandblasting and metal priming of metal surface before bonding could provide the adequate bond strength during rebonding of resin-bonded fixed partial denture.

Oxygen Partial Pressure Dependency of Al-donor Solubility in ZnO (ZnO내 Al-도우너의 용해도의 산소분압 의존성)

  • 김은동;김남균
    • Journal of the Korean Ceramic Society
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    • v.38 no.12
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    • pp.1093-1096
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    • 2001
  • The Solid solution of A $l_2$ $O_3$ into ZnO can be defined by the substitution reaction of Al$\^$3+/ ions into the Zn$\^$2+/ sites of ZnO crystal lattice, the tetrahedral interstices composed of four neighbor oxygen ions in the wurtzite structure. Since the reaction either creates new zinc vacancies or consumes the oxygen vacancies, it should be in equilibrium with ZnO nonstoichiometry and disorder reactions. The relationships make oxygen partial pressure P$\sub$o2/ control the concentrations of the vacancies and consequently limit the Al solubility in ZnO, [Al$\sub$zn/]$\sub$max/. This paper firstly reports with a refined model for defect quilibria in ZnO that the solubility decrease with the increase of P$\sub$o2/, [Al$\sub$zn/]$\sub$max/ P$\sub$o2/$\^$-1/4/.

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Electrical and Optical Study of PLED & OLEDS Structures

  • Mohammed, BOUANATI Sidi;SARI, N. E. CHABANE;Selma, MOSTEFA KARA
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.3
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    • pp.124-129
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    • 2015
  • Organic electronics are the domain in which the components and circuits are made of organic materials. This new electronics help to realize electronic and optoelectronic devices on flexible substrates. In recent years, organic materials have replaced conventional semiconductors in many electronic components such as, organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs) and organic photovoltaic (OPVs). It is well known that organic light emitting diodes (OLEDs) have many advantages in comparison with inorganic light-emitting diodes LEDs. These advantages include the low price of manufacturing, large area of electroluminescent display, uniform emission and lower the requirement for power. The aim of this paper is to model polymer LEDs and OLEDs made with small molecules for studying the electrical and optical characteristics. The purpose of this modeling process is, to obtain information about the running of OLEDs, as well as, the injection and charge transport mechanisms. The first simulation structure used in this paper is a mono layer device; typically consisting of the poly (2-methoxy-5(2'-ethyl) hexoxy-phenylenevinylene) (MEH-PPV) polymer sandwiched between an anode with a high work function, usually an indium tin oxide (ITO) substrate, and a cathode with a relatively low work function, such as Al. Electrons will then be injected from the cathode and recombine with electron holes injected from the anode, emitting light. In the second structure, we replaced MEH-PPV by tris (8-hydroxyquinolinato) aluminum (Alq3). This simulation uses, the Poole-Frenkel -like mobility model and the Langevin bimolecular recombination model as the transport and recombination mechanism. These models are enabled in ATLAS- SILVACO. To optimize OLED performance, we propose to change some parameters in this device, such as doping concentration, thickness and electrode materials.

A Novel Atomic Layer Deposited Al2O3 Film with Diluted NH4OH for High-Efficient c-Si Solar Cell

  • Oh, Sung-Kwen;Shin, Hong-Sik;Jeong, Kwang-Seok;Li, Meng;Lee, Horyeong;Han, Kyumin;Lee, Yongwoo;Lee, Ga-Won;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.1
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    • pp.40-47
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    • 2014
  • In this paper, $Al_2O_3$ film deposited by thermal atomic layer deposition (ALD) with diluted $NH_4OH$ instead of $H_2O$ was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of $Al_2O_3$ film was proportional to the $NH_4OH$ concentration. $Al_2O_3$ film deposited with 5 % $NH_4OH$ has the greatest negative fixed oxide charge density ($Q_f$), which can be explained by aluminum vacancies ($V_{Al}$) or oxygen interstitials ($O_i$) under O-rich condition. $Al_2O_3$ film deposited with $NH_4OH$ 5 % condition also shows lower interface trap density ($D_{it}$) distribution than those of other conditions. At $NH_4OH$ 5 % condition, moreover, $Al_2O_3$ film shows the highest excess carrier lifetime (${\tau}_{PCD}$) and the lowest surface recombination velocity ($S_{eff}$), which are linked with its passivation properties. The proposed $Al_2O_3$ film deposited with diluted $NH_4OH$ is very promising for passivation layer and AR coating of the p-type c-Si solar cell.

A SHEAR BOND STRENGTH OF RESIN CEMENTS BONDED TO PRESSABLE PORCELAIN WITH VARIOUS SURFACE TREATMENTS

  • Lee Jong-Yeop;Im Eui-Bin
    • The Journal of Korean Academy of Prosthodontics
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    • v.41 no.3
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    • pp.379-386
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    • 2003
  • Statement of problem. Resin cements are widely used in adhesive dentistry specially on all ceramic restorations. It is needed to find out adequate bonding strength between different porcelain surface treatments, commercially available porcelains, and different resin cement systems. Purpose. The purpose of this study was to evaluate shear bond strength of resin cements bonded to porcelains in three different modalities; 5 different porcelain surface treatments, 3 different resin cement systems and 3 different commercially available pressable porcelains. Material and Method. This study consisted of 3 parts. Part I examined the effect of five different surface treatments on the pressable porcelain. Fifty discs (5 mm in diameter and 3 mm in height) of Authentic porcelain were randomly divided into 5 groups (n = 10). The specimens were sanded with 320 grit SiC paper followed by 600 grit SiC paper. The specimens were treated as follow: Group 1-Sandblasting (aluminum oxide) only, Group 2 - sandblasting/ silane, Group 3 - sandblasting/ acid etching/ silane, Group 4 - acid etching only, Group 5 - acid etching/ silane. Part II examined the shear bond strength of 3 different resin cement systems (Duolink, Variolink II, Rely X ARC) on acid etching/ silane treated Authentic pressable porcelain. Part 3 examined the shear bond strength of Duolink resin cement on 3 different pressable porcelains (Authentic, Empress I, Finesse). All cemented specimens were stored in distilled water for 2 hours and tested with Ultradent shear bond strength test jig under Universal Instron machine until fracture. An analysis of variance(ANOVA) test was used to evaluate differences in shear bond strength. Result. The shear bond strength test resulted in the following: (1) Acid etched porcelains recorded greater shear bond strength values to the sandblasted porcelains. (2) Silane treated porcelains recorded greater shear bond strength values to non-silane treated porcelains. (3) There was no significant difference between sandblasting/ acid etching/ silane treated and acid etching/ silane treated porcelains. However those values were much higher than other three groups. (4) The shear bond strength with Variolink II was lower than the value of Duolink or Rely X ARC. (5) The shear bond strength of Finesse was lower than the value of Authentic or Empress I.