• Title/Summary/Keyword: aluminum nitride

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Temperature Dependence on Electrical Characterization of Epitaxially Grown AIN film on 6H-SiC Structures (6H-SiC 위에 형성한 에피택시 AIN 박막 구조에 대한 전기적 특성의 평가온도 의존성)

  • Kim Yong-Seong;Kim Kwang-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.1
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    • pp.18-22
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    • 2006
  • Epitaxial aluminum nitride films on 6H-SiC (0001) were fabricated using reactive RF magnetron sputtering and post-deposition rapid thermal annealing. The electrical properties of AIN films depending on film thickness and measurement temperature have been observed. Full width at half maximum of AIN (0002) was $0.1204^{\circ}$ (about 430 arcsec) X-ray rocking curve results. The equivalent oxide thickness (EOT) of AIN film was estimated as about 10 nm and the leakage current density was within the order of $10^{-8} 4/cm^2$. The dielectric constant of AIN film estimated from the accumulation region of C-V curve measured at $300^{\circ}C$ was 8.3. The dynamic dielectric constant was obtained as 5.1 from J vs. 1/T plots at the temperature ranging from R.T. to $300^{\circ}C$ From above, estimation temperature dependance of the electrical properties of Al/AIN/SiC MIS devices was affirmed and useful data compilation for the reliabilities of SiC MIS is expected.

SAW characteristics of AlN films sputtered on SiC buffer layer for harsh environment applications (SiC 버퍼충위 스퍼터링법으로 증착된 극한 환경용 AlN박막의 SAW 특성)

  • Hoang, Si-Hong;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.273-273
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    • 2008
  • This paper describes the frequency response of two-port surface acoustic wave (SAW) resonator made of 002-polycrystalline aluminum nitride (AlN) thin film on 111-poly 3C-SiC buffer layer. In there, Polycrystalline AlN thin films were deposited on polycrystalline 3C-SiC buffer layer by pulsed reactive magnetron sputtering system, the polycrystalline 3C-SiC was grown on $SiO_2$/Si sample by CVD. The obtained results such as the temperature coefficient of frequency (TCF) of the device is about from 15.9 to 18.5 ppm/$^{\circ}C$, the change in resonance frequency is approximately linear (30-$150^{\circ}C$), which resonance frequency of AlN/3C-SiC structure has high temperature stability. The characteristics of AlN thin films grown on 3C-SiC buffer layer are also evaluated by using the XRD, and AFM images.

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Synthesis and Characterization of Fiberous AlN by Electrospinning (전기방사에 의한 섬유상 질화알루미늄 합성 및 특성 평가)

  • Chun, Seung-Yeop;Hwang, Jin-Ah;Chu, Jae-Uk;Chun, Myoung-Pyo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.7
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    • pp.441-446
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    • 2017
  • Aluminum nitride fibers were synthesized by carbothermal reduction and nitridation of precursor fibers obtained by electrospinning. The starting materials used to synthesize the AlN fibers were $Al(NO_3)_3{\cdot}9H_2O$ and urea. Polyvinylpyrrolidone with increasing viscidity was used as the carbon source to obtain a composite solution. The mixed solution was drawn into a plastic syringe with a stainless steel needle, which was used as the spinneret and connected to a 20 kV power supply. A high voltage was supplied to the solution to facilitate the formation of a dense net of fibers on the collector. The precursor fibers were dried at $100^{\circ}C$ and then heated to $1,400^{\circ}C$ for 1 h in a microwave furnace under $N_2$ gas flow for the carbothermal reduction and nitridation. X-ray diffraction studies indicated that the synthesized fibers consisted of the AlN phase. Field emission scanning electron microscopy studies indicated that the diameter of the calcined fibers was approximately 100 nm.

The Effect of SiON Film on the Blistering Phenomenon of Al2O3 Rear Passivation Layer in PERC Solar Cell

  • Jo, Guk-Hyeon;Jang, Hyo-Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.364.1-364.1
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    • 2014
  • 고효율 태양전지로 가기 위해서는 태양전지의 후면 패시베이션은 중요한 역할을 한다. 후면 패시베이션 막으로 사용되는 $Al_2O_3$ 막은 $Al_2O_3/Si$ 계면에서 높은 화학적 패시베이션과 Negative Fixed Charge를 가지고 있어 적합한 Barrier막으로 여겨진다. 하지만 이후에 전면 Metal paste의 소성 공정에 의해 $800^{\circ}C$이상 온도를 올려주게 됨에 따라 $Al_2O_3$ 막 내부에 결합되어 있던 수소들이 방출되어 blister가 생성되고 막 질은 떨어지게 된다. 우리는 blister가 생성되는 것을 방지하기 위한 방법으로 PECVD 장비로 SiNx를 증착하는 공정 중에 $N_2O$ 가스를 첨가하여 SiON 막을 증착하였다. SiON막은 $N_2O$가스량을 조절하여 막의 특성을 변화시키고 변화에 따라 소성시 막에 미치는 영향에 대하여 조사하였다. 공정을 위해 $156{\times}156mm2$, $200{\mu}m$, $0.5-3.0{\Omega}{\cdot}cm$ and p-type 단결정 실리콘 웨이퍼를 사용하였고, $Al_2O_3$ 막을 올리기 전에 RCA Cleaning 실행하였다. ALD 장비를 통해 $Al_2O_3$ 막을 10nm 증착하였고 RF-PECVD 장비로 SiNx막과 SiON막을 80nm 증착하였다. 소성로에서 $850^{\circ}C$ ($680^{\circ}C$) 5초동안 소성하고 QSSPC를 통해 유효 반송자 수명을 알아보았다.

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Insulating Behavior of Sintered AlN Ceramics Prepared by High-Energy Bead Milling of AlN Powder (AlN 분말의 고에너지 밀링에 따른 소결체의 절연 특성)

  • Ryu, Sung-Soo;Lee, Sung-Min
    • Journal of Powder Materials
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    • v.24 no.6
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    • pp.444-449
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    • 2017
  • Aluminum nitride (AlN) powder specimens are treated by high-energy bead milling and then sintered at various temperatures. Depending on the solvent and milling time, the oxygen content in the AlN powder varies significantly. When isopropyl alcohol is used, the oxygen content increases with the milling time. In contrast, hexane is very effective at suppressing the oxygen content increase in the AlN powder, although severe particle sedimentation after the milling process is observed in the AlN slurry. With an increase in the milling time, the primary particle size remains nearly constant, but the particle agglomeration is reduced. After spark plasma sintering at $1400^{\circ}C$, the second crystalline phase changes to compounds containing more $Al_2O_3$ when the AlN raw material with an increased milling time is used. When the sintering temperature is decreased from $1750^{\circ}C$ to $1400^{\circ}C$, the DC resistivity increases by approximately two orders of magnitude, which implies that controlling the sintering temperature is a very effective way to improve the DC resistivity of AlN ceramics.

빗각 증착법(Oblique Angle Deposition)으로 코팅된 금속 및 화합물 박막의 특성

  • Yang, Ji-Hun;Park, Hye-Seon;Jeong, Jae-Hun;Song, Min-A;Jeong, Jae-In
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.151-151
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    • 2012
  • 빗각 증착법(oblique angle deposition; OAD)을 이용하여 코팅된 알루미늄과 질화 티타늄 박막의 특성을 분석하였다. OAD는 기판과 증발원이 수평하게 위치하는 일반적인 코팅방법과 다르게 기판이 증발원과 수평하게 놓이지 않고 일정한 각으로 기울여 코팅하는 방법을 의미한다. 코팅 시 기판이 증발원과 수평하지 않으면 입사되는 증기가 일정한 각도를 유지하기 때문에 코팅되는 박막의 구조가 달라지고 이로 인해서 물리적 특성도 변하게 된다. 본 연구에서는 음극아크와 스퍼터링을 이용하여 각각 질화 티타늄과 알루미늄을 빗각으로 코팅하여 박막의 미세구조와 물성 변화를 관찰하였다. 스퍼터링을 이용하여 빗각 코팅된 알루미늄의 경우, 박막의 구조가 치밀해지고 표면 조도가 낮아지는 현상이 관찰되었다. 알루미늄 박막의 치밀도와 표면조도 향상은 가시광선 영역의 반사율을 높이는 효과가 있었다. 강판에 알루미늄을 코팅하여 염수분무를 실시한 결과, 치밀한 조직으로 인해서 내식성이 향상되는 결과를 보였다. 음극 아크를 이용하여 빗각 코팅된 질화 티타늄 박막에서 기판과 수직하지 않고 일정한 각도로 기울어진 주상 조직이 관찰되었다. 기판에 수직하게 성장된 질화 티타늄 박막과 비교하여 기울어진 주상 구조의 박막은 경도가 높아지는 특성 변화가 관찰되었다. 빗각 증착법을 이용하여 박막의 조직, 물성 등을 제어할 수 있었다. 박막에 다양한 기능을 부여하는 코팅방법으로 빗각 증착법이 활용될 수 있을 것으로 판단된다.

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Dispersion Characteristics of AlN-Y2O3 Powder Mixture by Various Dispersants in Non-aqueous Solvents (다양한 분산제에 의한 AlN-Y2O3 혼합분말의 비수계 용매 중 분산특성)

  • Kim, Shin;Bang, Sang-Woo;Hwang, Injoon;Yoon, Sang-Ok;Shin, Hyunho
    • Journal of the Korean Ceramic Society
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    • v.51 no.4
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    • pp.324-331
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    • 2014
  • The dispersion characteristics of AlN-4.5 wt% $Y_2O_3$ powder mixture by various dispersants were investigated in ethanol and methyethly-ketone (MEK) solvents. In general, the cationic polymer dispersants demonstrated superior dispersion of the powder as compared to the non-ionic ester-type dispersants or anionic phosphate-ester-based ones. The dispersion performance of the cationic polymer dispersants was sensitive to the type of solvent. An anhydric maleic-acid-based graft copolymer dispersant, AFB-1521, demonstrated a very good dispersion capability in ethanol but exhibited a much inferior dispersion in MEK. On the other hand, the dispersion of the powder mixture was very good with a phosphate-ester-based block polymer dispersant, BYK-111, in MEK solvent, while dispersionwas much degraded in ethanol.

Hot Pressing and Spark Plasma Sintering of AlN-SiC-TiB2 Systems using Boron and Carbon Additives (보론과 카본 조제를 사용한 AlN-SiC-TiB2계의 고온가압 및 Spark Plasma Sintering)

  • Lee, Sea-Hoon;Kim, Hai-Doo
    • Journal of the Korean Ceramic Society
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    • v.46 no.5
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    • pp.467-471
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    • 2009
  • Effects of boron and carbon on the densification and thermal decomposition of an AlN-SiC-$TiB_2$ system were investigated. $SiO_2$ was mostly removed by the addition of carbon, while $Al_2O_3$ formed $Al_4O_4C$ and promoted the densification of the systems above $1850^{\circ}C$. Rather porous specimens were obtained without the additives after hot pressing at $2100^{\circ}C$, while densification was mostly completed at $2000^{\circ}C$ by using the additives. The sintering temperature decreased further to $1950^{\circ}C$ by applying spark plasma sintering. The additives promoted the shrinkage of AlN by forming a liquid phase which was originated from the carbo- and boro-thermal reduction of $Al_2O_3$ and AlN.

Electrical Behavior of Aluminum Nitride Ceramics Sintered with Yttrium Oxide and Titanium Oxide

  • Lee, Jin-Wook;Lee, Won-Jin;Lee, Sung-Min
    • Journal of the Korean Ceramic Society
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    • v.53 no.6
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    • pp.635-640
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    • 2016
  • Electrical behavior of AlN ceramics sintered with $Y_2O_3$ as a sintering aid has been investigated with respect to additional $TiO_2$ dopant. From the impedance spectroscopy, it was found that the grain and grain boundary conductivities have greatly decreased with addition of $TiO_2$ dopant. The $TiO_2$ dopant also increased the activation energy of the grain conductivity by about 0.37 eV; this increase was attributed to the formation of an associate between Al vacancies and Ti ions at the Al sites. Similarly, the electronic conductivity was reduced by $TiO_2$ addition. However, $TiO_2$ solubility in AlN grains was below the detection limit of typical EDX analysis. Grain boundary was clean, without liquid films, but did show yttrium segregation. The transference number of ions was close to 1, showing that AlN is a predominantly ionic conductor. Based on the observed results, the implications of using AlN applications as insulators have been discussed.

Fabrication and Properties of MFISFET Using $LiNbO_3$ Ferroelectric Films ($LiNbO_3$ 강유전체를 이용한 MFISFET의 제작 및 특성)

  • Jung, Soon-Won;Koo, Kyung-Wan
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.57 no.2
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    • pp.135-139
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    • 2008
  • MFISFETs with platinum electrode on the $LiNbO_3$/aluminum nitride/Si(100) structures were successfully fabricated and the properties of the FETs have been discussed. $I_D-V_G$ characteristics of MFISFETs for linear region (that is, 0.1 V of the drain voltage) showed hysteresis loop with a counter-clockwise trace due to the ferroelectric nature of $LiNbO_3$ films. A memory window (i.e., threshold voltage shift) of the fabricated device was about 2[V] for a sweep from -4 to +4[V]. The estimated field-effect electron mobility and transconductance on a linear region were 530[$cm^2/V{\cdot}s$] and 0.16[mS/mm], respectively. The drain current of 27[${\mu}A$] on the "on" state was more than 3 orders of magnitude larger than that of 30[nA] on the "off" state at the same "read" gate voltage of l.5[V], which means the memory operation of the MFISFET.