• 제목/요약/키워드: aluminum ion

검색결과 259건 처리시간 0.027초

Temperature cycling test of Cu films on anodized aluminum substrate of metal-PC application

  • 김형진;박재원
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.334-334
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    • 2011
  • We applied N-ion bombardment and heat treatment to the Cu thin films deposited on aluminum oxide layer for the enhancement of adhesion. With e-beam evaporation method. $1,000{\AA}$ thick Cu pre-bombardment layer was deposited on the aluminum oxide surface and then N-ion beam was bombared in order to mix the atoms at the film/substrate interface. Additional $4,000{\AA}$-thick Cu film was the coated. Subsequently, the ion mixide Cu on aluminum oxide was annealed at $200^{\circ}C$ and $300^{\circ}C$ in vacuum.

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질소이온주입에 의한 금형용 알루미늄의 표면개질특성 (Surface modification of Aluminum for mold by nitrogen ion implantation)

  • 강혁진;안성훈;김경동;이재상;이재형
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2004년도 추계학술대회 논문집
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    • pp.254-259
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    • 2004
  • The research on surface modification technology has been advanced to change the properties of engineering material. Ion implantation is a novel surface modification technology to enhance the mechanical, chemical and electronic properties of mechanical parts. In this research, nitrogen ions are implanted into aluminum for mold to improve endurance and life span. To analyze modification of surface properties, micro hardness, friction coefficient, wear resistance, contact angle, and surface roughness were measured. Hardness of ion implanted specimens was higher than untreated specimen and friction coefficient was also improved. In this experiment, it can be expected that nitrogen ion implantation can contribute to enhance the mechanical properties of material and ion implantation technology may also be applied to other materials.

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Improving the dielectric reliability using boron doping on solution-processed aluminum oxide

  • Kim, Hyunwoo;Lee, Nayoung;Choi, Byoungdeog
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.411.1-411.1
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    • 2016
  • In this study, we examined the effects of boron doping on the dielectric reliability of solution processed aluminum oxide ($Al_2O_3$). When boron is doped in aluminum oxide, the hysteresis reliability is improved from 0.5 to 0.4 V in comparison with the undoped aluminum oxide. And the accumulation capacitance is increased when boron was doped, which implying the reduction of the thickness of dielectric film. The improved dielectric reliability of boron-doped aluminum oxide is originated from the small ionic radius of boron ion and the stronger bonding strength between boron and oxygen ions than that of between aluminum and oxygen ions. Strong boron-oxygen ion bonding in aluminum oxide results dielectric film denser and thinner. The leakage current of aluminum oxide also reduced when boron was doped in aluminum oxide.

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SIMS Study on the Diffusion of Al in Si and Si QD Layer by Heat Treatment

  • Jang, Jong Shik;Kang, Hee Jae;Kim, An Soon;Baek, Hyun Jeong;Kim, Tae Woon;Hong, Songwoung;Kim, Kyung Joong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.188.1-188.1
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    • 2014
  • Aluminum is widely used as a material for electrode on silicon based devices. Especially, aluminum films are used as backside and front-side electrodes in silicon quantum dot (QD) solar cells. In this point, the diffusion of aluminum is very important for the enhancement of power conversion efficiency by improvement of contact property. Aluminum was deposited on a Si (100) wafer and a Si QD layer by ion beam sputter system with a DC ion gun. The Si QD layer was fabricated by $1100^{\circ}C$ annealing of the $SiO_2/SiO_1$ multilayer film grown by ion beam sputtering deposition. Cs ion beam with a low energy and a grazing incidence angle was used in SIMS depth profiling analysis to obtain high depth resolution. Diffusion behavior of aluminum in the Al/Si and Al/Si QD interfaces was investigated by secondary ion mass spectrometry (SIMS) as a function of heat treatment temperature. It was found that aluminum is diffused into Si substrate at $450^{\circ}C$. In this presentation, the effect of heat treatment temperature and Si nitride diffusion barrier on the diffusion of Al will be discussed.

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Dropwise condensation induced on chromium ion implanted aluminum surface

  • Kim, Kiwook;Lee, Youngjin;Jeong, Ji Hwan
    • Nuclear Engineering and Technology
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    • 제51권1호
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    • pp.84-94
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    • 2019
  • Aluminum substrates are irradiated with chromium ions and the steam condensation heat transfer performance on these surfaces is examined. Filmwise condensation is induced on the surface of aluminum specimens irradiated with chromium ion dose of less than $10^{16}ions/cm^2$ while dropwise condensation occurs on the specimens irradiated with chromium ion dose of $5{\times}10^{16}ions/cm^2$ in the range of ion energy from 70 to 100 keV. The heat transfer coefficient of the surfaces on which dropwise condensation occurs appeared to be approximately twice as much as the prediction by Nusselt's film theory. In a durability test, dropwise condensation lasts over six months and the heat transfer coefficient is also maintained.

에너지 구조재 적용을 위한 알루미늄/섬유강화 복합재의 표면처리 (Surface Treatment of Aluminum/ Fiber- Reinforced Composites As Energy-Saving Light Structures)

  • 이경엽;강용태;양준호
    • 한국표면공학회지
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    • 제34권1호
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    • pp.56-61
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    • 2001
  • In this work, the surface treatment of aluminum/composites (graphite-epoxy composites) was investigated. The surface of composites was treated by $Ar^{+}$ ion beam under oxygen environment. The surface of aluminum was treated by DC plasma. The optimal condition of surface treatment for the composites was determined by measuring the contact angle as a function of ion dose. The optimal treatment condition of the aluminum was determined by measuring the contact angle and T-peel strength as a function of mixture ratio of acetylene gas to nitrogen gas. The mixture ratios used were 1:9, 3:7, 5:5, 7:3, and 9:1. The results showed that the contact angle of composites decreased from$ 81^{\circ}$ to $8^{\circ}$ as the ion dose increased from zero to $1$\times$10^{17}$ions/$\textrm{cm}^2$. The optimal condition of ion dose was $1$\times$10^{16}$ions/$\textrm{cm}^2$. The results also showed that the contact angle of aluminum was a minimum for the mixture ratio of 5:5. Similarly, the T-peel strength was a maximum for the mixture ratio of 5:5, which indicates that the optimal condition of mixture ratio of acetylene gas to nitrogen gas is 5:5.

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알루미늄 냉각 판을 이용한 하이브리드/전기차용 배터리 냉각시스템의 수치적 연구 (Thermal Analysis of a Battery Cooling System with Aluminum Cooling Plates for Hybrid Electric Vehicles and Electric Vehicles)

  • 백승기;박성진
    • 한국자동차공학회논문집
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    • 제22권3호
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    • pp.60-67
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    • 2014
  • The battery cells in lithium-ion battery pack assembled with high-capacity and high-power pouch cells, are commonly cooled with thin aluminum cooling plates in contact with the cells. For HEV/EV lithium-ion battery systems assembled with high-capacity, high-power pouch cells, the cells are commonly cooled with thin aluminum cooling plates in contact with the cells. Thin aluminum cooling plates are cooled by cold plate with coolant flow paths. In this study, the effect of the battery cooling system design including aluminum cooling plate thickness and various position of cold plate on the cooling performance are investigated by using finite element methods (FEM). Optimal cooling plate and cold plate design are proposed for improving the uniformity in temperature distributions as well as lowering average temperature for the cells with large capacities based on the simulation results.

Crystal Growth of Chromium (4+) Ion Doped Yttrium Aluminum Garnet

  • Yu, Y.M.;Jeong, S.J.;Koh, J.C.
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
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    • pp.53-53
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    • 1998
  • Four valence of Chromium ion doped Yttrium Aluminum Garnet crystals were grown by Floating Zone and Czochralski methods. Changes of valence for Chromium (3+) ion to Chromium (4+) were achieved by substitution of Yttrium ion in dodecahedral site to Calcium and by substitution of Aluminum in octahedral site to Magnesium. Growth conditions for high quality of crystals were investigated. Grown crystals were cut and polished and then observed various types of defects. Characterizations by means of measurement of density and lattice parameter as a function of solidification fraction were performed. Results of Q-switching test using grown crystals were also reported.

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알루미늄 합금의 수소취화 방지를 위한 경질양극산화 및 플라즈마이온질화의 영향 (Effects of Hard Anodizing and Plasma Ion-Nitriding on Al Alloy for Hydrogen Embrittlement Portection)

  • 신동호;김성종
    • Corrosion Science and Technology
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    • 제22권4호
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    • pp.221-231
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    • 2023
  • Interest in aluminum alloys for the hydrogen valves of fuel cell electric vehicles (FCEVs) is growing due to the reduction in fuel efficiency by the high weight. However, when an aluminum alloy is used, deterioration in mechanical characteristics caused by hydrogen embrittlement and wear is regarded as a problem. In this investigation, the aluminum alloy used to prevent hydrogen embrittlement was subjected to surface treatments by performing hard anodizing and plasma ion nitriding processes. The hard anodized Al alloy exhibited brittleness in which the mechanical characteristics rapidly deteriorated due to porosity and defects of surface, resulting in a decrease in the ultimate tensile strength and modulus of toughness by 15.58 and 42.51%, respectively, as the hydrogen charging time increased from 0 to 96 hours. In contrast, no distinct nitriding layer in the plasma ion-nitrided Al alloy was observed due to oxide film formation and processing conditions. However, compared to 0 and 96 hours of hydrogen charging time, the ultimate tensile strength and modulus of toughness decreased by 7.54 and 13.32%, respectively, presenting excellent resistance to hydrogen embrittlement.