• Electrical & Electronic Materials
• /
• v.7 no.1
• /
• pp.57-63
• /
• 1994

Aluminum oxide($Al_2{O_3}$) offers some unique advantages over the conventional silicon dioxide( $SiO_{2}$) gate insulator: greater resistance to ionic motion, better radiation hardness, possibility of obtaining low threshold voltage MOS FETs, and possibility of use as the gate insulator in nonvolatile memory devices. We have undertaken a study of the dielectric breakdown of $Al_2{O_3}$ on Si deposited by GAIVBE technique. In our experiments, we have varied the $Al_2{O_3}$ thickness from 300.angs. to 1400.angs. The resistivity of $Al_2{O_3}$ films varies from 108 ohm-cm for films less than 100.angs. to 10$_{13}$ ohm-cm for flims on the order of 1000.angs. The flat band shift is positive, indicating negative charging of oxide. The magnitude of the flat band shift is less for negative bias than for positive bias. The relative dielectric constant was 8.5-10.5 and the electric breakdown fields were 6-7 MV/cm(+bias) and 11-12 MV/cm (-bias).

• Tribology and Lubricants
• /
• v.11 no.5
• /
• pp.40-46
• /
• 1995

This study concerns the design and development of the non-vibrating capacitance probe which could be used as a non-contact sensor for tribological wear. This device detects surface charge through temporal variation in the work function of a material. Experiments are performed to demonstrate the operation of the probe on a roating aluminum shaft. The reference electrode of the probe, made of lead, is placed adjacent (< 1.25-mm distance) to the shaft. Both surfaces which are electrically connected, form a capacitor. An artificial spatial variation in the work function is imposed on the shaft surface by coating a segment along the shaft circumference with a colloidal silver paint. As the shaft rotates, the reference electode senses changing contact potential difference with the shaft surface, owing to compositional variation. Temporal variation in the contact potential difference induces a current through the electrical connection. This current is amplified and converted to a voltage signal by an electoronic circuit with an operational amplifier. The magnitude of the signal decreases asymptotically with the electrode-shaft distance and increases linearly with the rotational frequency. These results are consistent with the theoretical model. Potential applications of the probe on wear monitoring are proposed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.186-186
• /
• 2010

소자의 축소화에 따라 floating gate 형의 flash 메모리 소자는 얇은 게이트 절연막 등의 이유로, 이웃 셀 간의 커플링 및 게이트 누설 전류와 같은 문제점을 지니고 있다. 이러한 문제점을 극복하기 위해 charge trap flash 메모리 (CTF) 소자가 연구되고 있지만, CTF 메모리 소자는 쓰기/지우기 속도와 데이터 보존 성능간의 trade-off 관계와 같은 문제점을 지니고 있다. 최근, 이를 극복하기 위한 방안으로, 다른 유전율을 갖는 유전체들을 적층시킨 터널 절연막을 이용한 Tunnel Barrier Engineered (TBE) 기술이 주목 받고 있다. 따라서, 본 논문에서는 TBE 기술을 적용한 MIS-capacitor를 높은 유전율을 가지는 Al2O3와 HfO2를 이용하여 제작하였다. 이를 위해 먼저 Si 기판 위에 Al2O3 /HfO2 /Al2O3 (AHA)를 Atomic Layer Deposition (ALD) 방법으로 약 2/1/3 nm의 두께를 가지도록 증착 하였고, Aluminum을 150 nm 증착 하여 게이트 전극으로 이용하였다. Capacitance-Voltage와 Current-Voltage 특성을 측정, 분석함으로써, AHA 구조를 가지는 터널 절연막의 전기적인 특성을 확인 하였다. 또한, high-k 물질을 이용한 터널 절연막을 급속 열처리 공정 (Rapid Thermal Annealing-RTA) 과 H2/N2분위기에서 후속열처리 공정 (Post-RTA)을 통하여 전기적인 특성을 개선 시켰다. 적층된 터널 절연막은 열처리를 통해 터널링 전류의 민감도의 향상과 함께 누설전류가 감소됨으로서 우수한 전기적인 특성이 나타남을 확인하였으며, 적층된 터널 절연막 구조와 적절한 열처리를 이용하여 빠른 쓰기/지우기 속도와 전기적인 특성이 향상된 비휘발성 메모리 소자를 기대할 수 있다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.296-296
• /
• 2013

Supercapacitor is a capacitor with extraordinarily high energy density, which basically consists of current collector, active material and electrolyte. Ruthenium oxide ($RuO_2$) is one of the most widely studied active materials due to its high specific capacitance and good electrical conductivity. In general, it is known that the coating of $RuO_2$ on nanoarchitectured current collector shows improved performance of energy storage device compared to the coating on the planar current collector. Especially, the surface structure with standing coaxial nanopillars are most desirable since it can provide direct paths for efficient charge transport along the axial paths of each nanopillars and the inter-nanopillar spacing allows easy access of electrolyte ions. However, well-known fabrication methods for metal or metal oxide nanopillars, such as the process using anodize aluminum oxide (AAO) templates, often require long and complicated nanoprocess.In this work, we developed relatively simple method fabricating indium tin oxide (ITO) nanopillars via sputtering. We also electrodeposited $RuO_2$ nanoparticles onto these ITO nanopillars and investigated its physical and electrochemical properties.

• Korean Journal of Materials Research
• /
• v.26 no.3
• /
• pp.123-129
• /
• 2016

The morphology, crystal structure and size of aerosol nanoparticles generated by erosion of electrodes made of different materials (titanium, copper and aluminum) in a multi-spark discharge generator were investigated. The aerosol nanoparticle synthesis was carried out in air atmosphere at a capacitor stored energy of 6 J, a repetition rate of discharge of 0.5 Hz and a gas flow velocity of 5.4 m/s. The aerosol nanoparticles were generated in the form of oxides and had various morphologies: agglomerates of primary particles of $TiO_2$ and $Al_2O_3$ or aggregates of primary particles of $Cu_2O$. The average size of the primary nanoparticles ranged between 6.3 and 7.4 nm for the three substances studied. The average size of the agglomerates and aggregates varied in a wide interval from 24.6 nm for $Cu_2O$ to 46.1 nm for $Al_2O_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.541-542
• /
• 2006

This work describes the effect of the number of roll pressing and the composition of carbon black on the electric and mechanical properties of carbon-PTFE electrode, in which composition is MSP 20 : carbon black : PTFE = 95-X : X : 5 wt.%. It was found that the best electric and mechanical properties were obtained for sheet electrode roll pressed about 15 times and for sheet electrode, in which composition is MSP 20 : carbon black : PTFE = 80 : 15 : 5 wt.%. These behaviors could be explained by the network structure of PTFE fibrils and conducting paths linked with carbon blacks, respectively. On the other hand, cell capacitor using the sheet electrode with 15 wt.% of carbon black attached on aluminum current collector with the electric conductive adhesive, in composition is carbon black : CMC = 70 : 30 wt.%, has exhibited the best rate capability between $0.5mA/cm^2{\sim}100mA/cm^2$ current density and the lowest ESR.

• Korean Journal of Materials Research
• /
• v.4 no.7
• /
• pp.759-766
• /
• 1994

Our investigation aimed to reduce the leakage current of $Ta_2O_5$ thin film capacitor by layering SnOz thin film layer under Ta thin film, thereby supplying extra oxygen ions from the $SnO_{2}$ underlayer to enhance the stoichiometry of $Ta_2O_5$ during the oxidation of Ta thin film. Tantalum was evaporated by e-beam or sputtered on p-Si wafers with various deposition temperatures and was oxidized by dry--oxygen at the temperatures between $500^{\circ}C$ and $900^{\circ}C$. Aluminum top and bottom electrodes were formed to make Al/$Ta_2O_5$/p-Si/Al or $Al/Ta_2O_5/SnO_2$p-Si/AI MIS type capacitors. LCR meter and pico-ammeter were used to measure the dielectric constants and leakage currents of the prepared thm film capacitors. XRD, AES and ESCA were employed to confirm the crystallization of the thin f~lm and the compositions of the films. Dielectric constant of $Ta_2O_5$ thin film capacitor with $SnO_{2}$ underlayer was found to be about 200, which is about 10 times higher than that of $Ta_2O_5$ thin film capacitor without $SnO_{2}$ underlayer. In addition, higher oxidation temperatures increased the dielectric constants and reduced the leakage current. Higher deposition temperature generally gave lower leakage current. $Ta_2O_5/SnO_2$ capacitor deposited at $200^{\circ}C$ and oxidized at $800^{\circ}C$ showed significantly lower leakage current, $10^{-7}A/\textrm{cm}^2$ at $4 \times 10^{5}$V/cm, compared to the one without $SnO_{2}$ underlayer. XRD showed that $Ta_2O_5$ thin film was crystallized above $700^{\circ}C$. AES and ESCA showed that initially the $SnO_{2}$, underlayer supplied oxygen ions to oxidize the Ta layer, however, Sn also diffused into the Ta thin film layer to form a new $Ta_xSn_YO_Z$ , ternary oxide layer after all.

• Korean Journal of Materials Research
• /
• v.19 no.9
• /
• pp.462-467
• /
• 2009

The Charge Trap Flash (CTF) memory device is a replacement candidate for the NAND Flash device. In this study, Pt/$Al_2O_3/La_2O_3/SiO_2$/Si multilayer structures with lanthanum oxide charge trap layers were fabricated for nonvolatile memory device applications. Aluminum oxide films were used as blocking oxides for low power consumption in program/erase operations and reduced charge transports through blocking oxide layers. The thicknesses of $SiO_2$ were from 30 $\AA$ to 50 $\AA$. From the C-V measurement, the largest memory window of 1.3V was obtained in the 40 $\AA$ tunnel oxide specimen, and the 50 $\AA$ tunnel oxide specimen showed the smallest memory window. In the cycling test for reliability, the 30 $\AA$ tunnel oxide sample showed an abrupt memory window reduction due to a high electric field of 9$\sim$10MV/cm through the tunnel oxide while the other samples showed less than a 10% loss of memory window for $10^4$ cycles of program/erase operation. The I-V measurement data of the capacitor structures indicated leakage current values in the order of $10^{-4}A/cm^2$ at 1V. These values are small enough to be used in nonvolatile memory devices, and the sample with tunnel oxide formed at $850^{\circ}C$ showed superior memory characteristics compared to the sample with $750^{\circ}C$ tunnel oxide due to higher concentration of trap sites at the interface region originating from the rough interface.

• Korean Journal of Materials Research
• /
• v.16 no.3
• /
• pp.178-182
• /
• 2006

A single electro-discharge-sintering (EDS) pulse (1.0 kJ/0.7 g), from a $300{\mu}F$ capacitor, was applied to atomized spherical Ti-6Al-4V powder in a low vacuum to produce porous-surfaced implant compacts. A solid core surrounded by a porous layer was formed by a discharge in the middle of the compact. XPS (X-ray photoelectron spectroscopy) was used to study the surface characteristics of the implant material. C, O, and Ti were the main constituents, with smaller amounts of Al, V, and N. The implant surface was lightly oxidized and was primarily in the form of $TiO_2$ with a small amount of metallic Ti. A lightly etched EDS implant sample showed the surface form of metallic Ti, indicating that EDS breaks down the oxide film of the as-received Ti-6Al-4V powder during the discharge process. The EDS Ti-6Al-4V implant surface also contained small amounts of aluminum oxide in addition to $TiO_2$. However, V detected in the EDS Ti-6Al-4V implant surface, did not contribute to the formation of the oxide film..

• Journal of Electrical Engineering and information Science
• /
• v.3 no.2
• /
• pp.239-244
• /
• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.