• Title/Summary/Keyword: alternating

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A study of Fiber-Optic Voltage Sensor in a distribution automated switch (배전자동화 개폐기에서 광전압센서에 관한 연구)

  • 오상기;김요희;서승현;이희철;양승국
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2000.05a
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    • pp.493-496
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    • 2000
  • This study is about the design and fabrication of optical voltage sensor modules improved in the insulation reliability, where we adopted the space-division voltage system using the auxiliary electrodes to apply the uniform electric fields to the BSO, the device of which the polarization state varies with the variation of refractive index in the electric fields. We measured the output of fiber-Optic Voltage Sensors with the temperature changes in the thermostatic oven. And we measured the output of Fiber-Optic Voltage Sensors after setting its up in the disttibuion automated switch being apply 60Hz alternating voltage from 6.6kV to 17.BkV. In result, measured error characteristic is good, so we can judge it is applicable to the practical case

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a-Si TFT Integrated Gate Driver Using Multi-thread Driving

  • Jang, Yong-Ho;Yoon, Soo-Young;Park, Kwon-Shik;Kim, Hae-Yeol;Kim, Binn;Chun, Min-Doo;Cho, Hyung-Nyuck;Choi, Seung-Chan;Moon, Tae-Woong;Ryoo, Chang-Il;Cho, Nam-Wook;Jo, Sung-Hak;Kim, Chang-Dong;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1251-1254
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    • 2006
  • A novel a-Si TFT integrated gate driver circuit using multi-thread driving has been developed. The circuit consists of two independent shift registers alternating between the two mode, "wake" and "sleep". The degradation of the circuit is retarded since the bias stress is removed during the sleep mode. It has been successfully integrated in 14.1-in. XGA LCD Panel, showing enhanced stability.

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Integrated Gate Driver Circuit Using a-Si TFT with AC-Driven Dual Pull-down Structure

  • Jang, Yong-Ho;Yoon, Soo-Young;Kim, Binn;Chun, Min-Doo;Cho, Hyung-Nyuck;Cho, Nam-Wook;Sohn, Choong-Yong;Jo, Sung-Hak;Choi, Seung-Chan;Kim, Chang-Dong;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.944-947
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    • 2005
  • Highly stable gate driver circuit using a-Si TFT has been developed. The circuit has dual-pull down structure, in which bias stress to the TFTs is relieved by alternating applied voltage. The circuit has been successfully integrated in 4-in. QVGA and 14-in. XGA TFT-LCD with a normal a-Si process, which are stable for over 2,000 hours at $60^{\circ}C$. The enhancement of stability of the circuit is attributed to retarded degradation of pull-down TFTs by AC driving.

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Comparison of the fluid simulation with experimental data of excited Xe species density in PDP cell

  • Yang, Sung-Soo;Ko, Sang-Woo;Kim, Hyun-Chul;Mukherjee, Sudeshna;Lee, Jae-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.739-742
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    • 2003
  • We have compared 2-D and 3-D fluid simulation results of alternating current plasma display panel (AC-PDP) cell with experimentally measured two kinds of excited Xe species $Xe^{\ast}(^{3}P_{1})$ and $Xe^{\ast}(^{3}P_{2})$ characteristics. Although direct experimental access and diagnostics of the discharge in a PDP cell is problematic due to the small cell size, some of experimental technologies have made it possible to diagnose the behavior of excited Xe species [1, 2]. The simulation shows the similar characteristics to the experimental results in the excited Xe species density distribution and the number of excited Xe atoms in anode and cathode region. In certain cases, we obtained the arch-shaped discharge path between two sustain electrodes due to the additional pulse applied to address electrode analogous to experiment. This long path discharge induced higher luminous and discharge efficiency compared to the standard case.

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Nonlinear Dielectric Relaxation in VDCN/VPr Copolymer (VDCN/VPr 공중합체(共重合體)의 비선형(非線形) 유전특성(誘電特性))

  • Lee, Duck-Chool;Kang, Dae-Ha
    • Proceedings of the KIEE Conference
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    • 1989.07a
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    • pp.356-358
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    • 1989
  • Linear and nonlinear complex permittivities have been measured for an alternating copolymer of vinylidene cyanide(VSCN) with vinyl propionale(VPr). It is found that the third order permittivity ${\varepsilon}_3$ depends upon frequency according to a function V ${\varepsilon}_3$/ ${1+(j{\omega}{\tau}_3)^{\beta}}^3$ while the linear permittivity ${\varepsilon}_1$obeys a Debye type function ${\nabla}{\varepsilon}_1$/ {1+$(j{\omega}{\tau}_1)^{\beta}$}. Experimental results are well fitled by predicted functions except at low frequency where dc conduction dominates. The relaxation times ${\tau}_1$ and ${\tau}_3$ at same teperature are nealy equal and depend upon temperature according to WLF form. The relaxation strengths ${\nabla}{\varepsilon}_1$ and ${\nabla}{\varepsilon}_3$ have a peak at the vicinity of glass transition temperature (Tg). The strength ${\nabla}{\varepsilon}_1$ has a value of -9 order and ${\nabla}{\varepsilon}_3$ has a negative value of -25 order. The analysis of mechanism by combined knowledge about linear and nonlinear permittivities and dipole moment gives us an imformation of the electrical and thermal dipolar motions in this copolymer.

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Electrical characteristics of $Al_2O_3$ added ZnO ($Al_2O_3$가 첨가된 ZnO의 전기적 특성)

  • 최우성;소병문;홍진웅
    • Electrical & Electronic Materials
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    • v.9 no.6
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    • pp.572-577
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    • 1996
  • Alternating current and direct current of pure, ball milled, and $Al_{2}$O$_{3}$ added ZnO were investigated by means of complex impedance measurement and voltage-current source measurement unit. The electrical conductivity of A1$_{2}$O$_{3}$ added ZnO samples increases when the content of A1$_{2}$O$_{3}$ is used within 1 at% and decreases when it's used more than that. The increase and decrease of electrical conductivity seem to be the donor effect of $Al_{2}$O$_{3}$ and the increase of the number of ZnO grains, respectively. Impedance spectrum seems to be one semircicle. The size of semicircle increase with increasing the A1$_{2}$O$_{3}$ contents. The calculated dielectric constant(at 50.deg. C) were about 70-140 at the peak of the semicircle. The semicircles seem not to be the resistance of ZnO grain as compared to that of 10 for pure ZnO.

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Effect of Microstructural Design on the Electrical Properties of Y2O3-Stabilized ZrO2 (미세구조 설계에 따른 이트리아 안정화 지르코니아의 전기적 성질 변화)

  • 김선재;김경호;오석진;강대갑;국일현
    • Journal of the Korean Ceramic Society
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    • v.30 no.9
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    • pp.717-722
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    • 1993
  • Effects of microstructures on the electrical properties of ZrO2 based ceramics were analyzed by modeling layer arrangements and mixed phase structures. Single layers and alternating multilayers were made from 3mol% and 8mol% Y2O3 doped ZrO2 powders, while mixed specimen was made by blending and compacting these raw powders. After sintering at 150$0^{\circ}C$ for 2hr in air, AC impedance characteristics were measured. Contributiion of bulk comonent to total resistivity and its temperature-dependence were larger in 8Y-ZrO2 single layer than in 3Y-ZrO2 single layer. The multilayered specimen connected in serial to electrodes showed partial characteristics of both 3Y-ZrO2 and 8Y-ZrO2 single layers. The multilayered specimen connected in parallel to electrodes and the mixed specimen exhibited characteristics mainly of 8Y-ZrO2 single layer. The multilayered specimen connected in parallel to electrodes revealed the highest electrical conductivity near the operating temperature of solid oxide fuel cell. However, it is expected that the mixed specimen is appropriate for the applications because of its relatively high electrical conductivity with high strength expected.

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Electrochemical Properties and Photoisomerization of DOPC-8A5H Mixture Langmuir-Blogett Films (인지질(DOPC)과 지방산(8A5H)의 혼합 LB막의 광이성질화 현상과 전기화학적 특성)

  • Park, Keun-Ho;Choi, Sung-Hyun;Kim, Nam-Seok;Kim, Duck-Sool
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.874-877
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    • 2004
  • We carried out this subject to observe electrochemical properties of 1,2-dioleoyl-sn- glycero-3-phosphocholine(DOPC) mixed with fatty acid containing azobenzene group by using cyclic voltammetry with a three-electrode system, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode in $NaClO_4$ solution. We investigated the photoisomerization and electrochemical property of the organic ultra thin film of fatty acid containing azobenzene was prepared on the hydrophilic ITO(idium tin oxide) glass plate by LB method. As a result, the absorption spectra of BASH and DOPC of mixture LB films was induced to photoisomerization by alternating irradiation of ultraviolet and visible light. A measuring range was reduced from initial potential to -1350mV, continuously oxidized to 1650 mV and measured to the initial point. The scan rate were 50, 100, 150 and 200 mV/s. As a results, LB films of BASH-DMPC appeared reversible process caused by the reduction-oxidation current from the cyclic voltammogram.

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Measurement of the photoinduced Dichoism in Ag/AsGeSeS multilayer thin films (Ag/AsGeSeS 다층박막에서의 이색성 측정)

  • Shin, Kyung;Yeo, Cheol-Ho;Lee, Jung-Tae;Park, Jeong-Il;Lee, Young-Jong;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.04b
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    • pp.81-84
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    • 2002
  • The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the $Ag/As_{10}Ge_{10}Se_{15}S_{35}$ multi-layer. Mutilayer structures formed by alternating metal(Ag) and chalcogenide($As_{10}Ge_{10}Se_{15}S_{35}$). The Ag polarized photodoping result in reducing time of saturation anisotrophy and increasing sensitivity of linearly anisotrophy intensity, up to maximum 220%. In the thin films of chalcogenide, the Ag polarized photodoping will be show a capability of new method that suggested more improvement of photoinduced anisotrophy property.

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Design and FEA of Langevin Type Ultrasonic Vibrator for Development of Rotary Motor (회전형 초음파모터 개발을 위한 란쥬반형 진동자의 설계 및 유한요소해석)

  • Park, Min-Ho;Kim, Hyeoung-Woo;Park, Tae-Gone;Kim, Myong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.05b
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    • pp.53-56
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    • 2000
  • Piezoelectric ceramics can provide electro-mechanical transduction with high stresses but low displacement. To obtain larger displacements, several mechanical amplifying structures have been used. High alternating displacements can be obtained using resonant structure. In this paper, we designed a bolt-tightened Langevin type ultrasonic vibrator whose resonant frequency is 50[kHz] and ceramics are multilayered. FEM(Finite Element Methode) was employed to calculate. the resonant frequencies and maximum displacements of designed vibrators. The designed resonant frequency and computer calculated frequencies were coincided. When input voltages were increased, the maximum displacements also rose. As AC voltage was applied, the maximum displacement were shown sinusoidal changes. Terminal input admittance over a frequency range spanning the resonant frequency were calculated. ANSYS was used to find resonant frequencies and calculate displacements of vibrators.

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