• Title/Summary/Keyword: alkali developable

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Study on the Compositions of Photosensitive Resistor Paste Using Epoxy Acrylate Oligomers and Conductive Carbonblack (에폭시 아크릴레이트 올리고머와 전도성 카본블랙을 이용한 감광성 저항 페이스트 조성 연구)

  • Park, Seong-Dae;Kang, Nam-Kee;Lim, Jin-Kyu;Kim, Dong-Kook
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.421-421
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    • 2008
  • Generally, the polymer thick-film resistors for embedded organic or hybrid substrate are patterned by screen printing so that the accuracy of resistor pattern is not good and the tolerance of resistance is too high(${\pm}$20~30%). To reform these demerits, a method using Fodel$^{(R)}$ technology, which is the patterning method using a photosensitive resin to be developable by aqueous alkali-solution as a base polymer for thick-film pastes, was recently incorporated for the patterning of thermosetting thick-film resistor paste. Alkali-solution developable photosensitive resin system has a merit that the precise patterns can be obtained by UV exposure and aqueous development, so the essential point is to get the composition similar to PSR(photo solder resist) used for PCB process. In present research, we made the photopatternable resistor pastes using 8 kinds of epoxy acrylates and a conductive carbonblack (CDX-7055 Ultra), evaluated their developing performance, and then measured the resistance after final curing. To become developable by alkali-solution, epoxy acrylate oligomers with carboxyl group were prepared. Test coupons were fabricated by patterning copper foil on FR-4 CCL board, plating Ni/Au on the patterned copper electrode, applying the resistor paste on the board, exposing the applied paste to UV through Cr mask with resistor patterns, developing the exposed paste with aqueous alkali-solution (1wt% $Na_2CO_3$), drying the patterned paste at $80^{\circ}C$ oven, and then curing it at $200^{\circ}C$ during 1 hour. As a result, some test compositions couldn't be developed according to the kind of oligomer and, in the developed compositions, the measured resistance showed different results depending on the paste compositions though they had the same amount of carbonblack.

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Positive Type Photoresist for Patterning of Interdielectric Layer of TFT Array

  • Lee, Hyo-Jung;Kim, Hyo-Jin;Kim, Soon-Hak;Park, Lee-Soon;Lee, Yun-Su;Song, Gab-Deuk
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.564-566
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    • 2007
  • Synthesis of two photoactive compounds containing core imide moiety was carried out for an application to interdielectric layer in TFTLCD array. An aqueous alkaline developable polymer matrix was synthesized by free radical copolymerization. A positive photoresist formulation was developed utilizing synthesized UV monomers, photoactive compound, binder polymer, sulfactant and alkali developable polymer matrix. It was found that via-holes with good resolution, high transmittance and thermal resistance could be obtained by photolithographic process utilizing the new positive interdielectric material with high thermal stability.

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Synthesis of Imide Monomers for Application to Organic Photosensitive Interdielectric Layer

  • Kwon, Hyeok-Yong;Vu, Quang Hung;Lee, Yun-Soo;Park, Lee-Soon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.816-819
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    • 2008
  • A negative photoresist formulation was developed utilizing synthesized UV monomers containing imide linkage, photoinitiator, UV oligomer, and alkali developable polymer matrix. It was found that via-holes with good resolution, high transmittance and thermal resistance could be obtained by photolithographic process utilizing the negative-type photoresist formulations.

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Synthesis and Characterization of Photosensitive Polyimides Containing Alicyclic Structure (지방족고리 구조를 함유하는 감광성 폴리이미드 수지의 합성 및 특성 평가)

  • 심종천;최성묵;심현보;권수한;이미혜
    • Polymer(Korea)
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    • v.28 no.6
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    • pp.494-501
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    • 2004
  • A new alkali developable photosensitive poly(amic acid) (PAA-0) with transmittance at 400 nm was synthesized from cyclobutane-1,2,3,4-tetracarboxylic dianhydride, 2-(methacryloyloxy)ethyl-3,5-diamino-benzoate and 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethyl disiloxane in N-methyl-2-pyrrolidinone. Photosensitivity of the PAA-0 was investigated at 365-400 nm in the presence of a photoinitiator using a high pressure mercury lamp. The photo-cured poly(amic acid) was insoluble toward aqueous 2.38 wt% tetramethylammonium hydroxide solution. Negative pattern of the PAA-0 with 25 ${\mu}{\textrm}{m}$ resolution was obtained by developing with 2.38 wt% tetramethylammonium hydroxide solution after exposure of 600 mJ/$\textrm{cm}^2$ in the presence of 2,2-dimethoxy-2-phenyl-acetophenone as a photoinitiator. The patterned poly(amic acid) was converted to polyimide by thermal curing at 25$0^{\circ}C$ for 50 min, which showed chemical resistance against photoresist stripper as well as good transmittance at 400 nm.

Synthesis and characterization of negative-type photosensitive polyimides for TFT-LCD array

  • Kim, Hyo-Jin;Kim, Hyun-Suk;Kim, Soon-Hak;Park, Lee-Soon;Hur, Young-Hune;Lee, Yoon-Soo;Song, Gab-Deuk;Kwon, Young-Hwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1625-1628
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    • 2006
  • Two different negative-type photosensitive polyimides were synthesized and characterized for an application as an interdielectric layer in TFTLCD array. In the case of photocurable polyimides, the photosensitive moiety, 2-HHSP, was synthesized through 3 step reaction, and then was incorporated into side chains of polyimide precursor by post reaction. Optimum compositions of negative-type photocurable polyimde were also formulated. For photopolymerizable polyimides, two novel UV monomers containing imide linkages were prepared. An aqueous alkaline developable polymer matrix was synthesized by free radical copolymerization. A negative photoresist formulation was developed utilizing synthesized UV monomers containing imide linkage, photoinitiator, UV oligomer, and alkali developable polymer matrix. It was found that viaholes with good resolution, high transmittance and thermal resistance could be obtained by photolithographic process utilizing the negative-type photoresist formulations.

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Aqueous alkali-developable Photosensitive Barrier Rib Paste for PDP and Photolithographic Process

  • Park, Lee-Soon;Jeong, Seung-Won;Kim, Soon-Hak;Tae, Heung-Sik
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.177-179
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    • 2000
  • Barrier rib for the plasma display panel (PDP) was made by photolithographic process utilizing photosensitive barrier rib paste. The barrier rib paste was prepared by first dissolving poly(MMA-co-MAA) binder polymer in butyl carbitol(BC) solvent at 15 wt% concentration. To this solution were added a mixture of functional monomers , Irgacure 651 photoinitiator, and barrier rib power and then the whole mixture was dispersed in the three roll mill for 2 hour. The effect of component and concentration of photosensitive barrier rib paste was studied. After optimization of the paste formulation and photolithographic process, barrier rib could be obtained with good resolution up to 110-120 ${\mu}m$ height and 80-90 ${\mu}m$ width.

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Fabrication of Photosensitive Polymer Resistor Paste and Formation of Finely-Patterned Thick Film Resistors (감광성 폴리머 저항 페이스트 제조와 미세패턴 후막저항의 형성)

  • Kim, Dong-Kook;Park, Seong-Dae;Yoo, Myong-Jae;Sim, Sung-Hoon;Kyoung, Jin-Bum
    • Applied Chemistry for Engineering
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    • v.20 no.6
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    • pp.622-627
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    • 2009
  • Using an alkali-solution developable photosensitive resin and a carbon black as a conductive filler, photo-patternable pastes for polymer thick film resistor were fabricated and evaluated. A photo solder resist (PSR), which is usually used as protecting layer of printed circuit board (PCB), was used as a photosensitive resin so that ultraviolet exposure and alkali-aqueous solution development of paste were possible. After fabricating the photosensitive polymer resistor paste, the electrical properties of thick film resistors were measured using PCB test boards. Sheet resistance was decreased with increasing amount of carbon black, but the developability was limited in excess loading of carbon black. The sheet resistance was also reduced by re-curing and the change rate was smaller in higher carbon black loading. Moreover, finely patterned meander-type thick film resistors were fabricated using photo-process and large resistance up to several tens of sheet resistance could be obtained in small area by this technique.

Synthesis and Characterization of New Positive Type Photosensitive Poly(amic acid)s (신규 양성형 감광성 폴리암산의 합성 및 특성 연구)

  • Sim Hyun-Bo;Yu Yeong-Im;Yi Mi-Hye
    • Polymer(Korea)
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    • v.30 no.2
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    • pp.162-167
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    • 2006
  • Polyamic acid (PAA) was prepared from cyclobutane-1,2,3,4-tetracarboxylic dianhydride (CBDA) and 4,4'-fiaminodiphenyl ether (DDE). In order to impart a photosensitivity to the PAA, diazonaphthoquinone (DNQ) derivative (DI) was added. However, the addition of the DI was not enough to inhibit the dissolution of the PAA for a aqueous alkal solution. Therefore, we had synthesized poly(amic acid ester)s by an adding 1,2-epoxy-3-phenoxypropane to the PAA. That is, an acidity of the PAA could be controlled by an esterification reaction of 1,2-epoxy-3-phenoxypropane with the PAA. Significant difference of a dissolution rate of the poly(amic acid ester) between an o(posed and unexposed area was observed at an acid content of 60% and less. Resolution of the positively patterned film showed about $25{\mu}m$ at the exposure dose of $200mJ/cm^2$.

Thick Film Resistors with Low Tolerance Using Photosensitive Polymer Resistor Paste (감광성 폴리머 저항 페이스트를 이용한 Low Tolerance 후막 저항체)

  • Kim, Dong-Kook;Park, Seong-Dae;Lee, Kyu-Bok;Kyoung, Jin-Bum
    • Applied Chemistry for Engineering
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    • v.21 no.4
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    • pp.411-416
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    • 2010
  • In this research, we intended to improve the tolerance of thick film resistor using photosensitive polymer resistor paste which was fabricated with alkali-solution developable photosensitive resin and conductive carbon black. At first, we investigated the effect of the selection of carbon black and photosensitive resin on the resistance range and tolerance level of polymer thick film resistor (PTFR). And then, a difference in resistance tolerance was evaluated according to the coating methods of photosensitive resistor paste on test board. In case that the photosensitive resistor paste was coated on whole surface of test board using screen printing, large positional tolerance was obtained because the formation of the thick film with uniform thickness was difficult. On the other hand, when the paste was coated with roller, the resistive thick film with uniform thickness was formed on the whole board area and the result of resistance evaluation showed low tolerance in ${\pm}10%$ range. The tolerance of PTFR could be improved by combination of the precise patterning using photo-process and the coating process for the resistive thick film with uniform thickness.