• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.5
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• pp.183-188
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• 2020

Lead zinc niobate (PZN)-added lead zirconate titanate (PZT) thick films with thickness of 5~10 ㎛ were fabricated on silicon and sapphire substrates using aerosol deposition method. The contents of PZN were varied from 0 %, 20 % and to 40 %. The PZN-added PZT film showed poorer electrical properties than pure PZT film when the films were coated on silicon substrate and annealed at 700℃. On the other hand, the PZN-added PZT film showed higher remanent polarization and dielectric constant values than pure PZT film when the films were coated on sapphire and annealed at 900℃. The ferroelectric and dielectric characteristics of 20 % PZN-added PZT films annealed at 900℃ were compared with the result values obtained from bulk ceramic specimen with same composition sintered at 1200℃. As annealing temperature increased, dielectric constant increased. These came from enhanced crystallization and grain growth by post heat treatment.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.1
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• pp.14-20
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• 2018

Lead zinc niobate (PZN) added lead zirconate titanate (PZT) thick films with thickness of $5{\sim}10{\mu}m$ were fabricated on silicon and sapphire substrates using aerosol deposition method. The contents of PZN were varied from 0 %, 20 % and 40 %. The initial particles (PZT, 2PZN-8PZT, 4PZN-6PZT) had irregular shape and submicron sizes. The as-deposited film had fairly dense microstructure without any crack, and showed only a perovskite single phase formed with nano-sized grains. The as-deposited films on silicon were annealed at the temperatures of $700^{\circ}C$, and the films deposited on sapphire were annealed at $900^{\circ}C$ in the electrical furnace. The effects of PZN addition on the microstructural evolution were observed using by FE-SEM and HR-TEM.

• Journal of the Korean Ceramic Society
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• v.36 no.9
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• pp.946-953
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• 1999

The etching characteristics of Er-doped sodium borosilicate glass film for the planar optical waveguides were investigated using reactive ion etching. The etch rate decreased as the pressure in creased but increased as the RF power increased. The etch rate increased as the flow rate C2F gas and the amount of O2 addition increased but decreased over critical point (C2F6 7,5 accm O2 20%) The etch rate was 180${\AA}$/min under C2F6 7.5 sccm O2 20% RF power 270 W, pressure 150 mTorr. With this optimum etching condition and subsequent heat treatment at 975$^{\circ}C$ for 30 minutes planar optical waveguides having improved sidewall roughness were fabricated successfully.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.156.1-156
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• 2000

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.31-31
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• 2008

고주파 잡음 발생과 고집적화 문제 해결을 위해 고용량 디커플링 캐패시터를 기판에 내장하는 연구가 활발히 진행되고 있다. 본 연구에서는 초고주파 환경에서 고용량 기판 내장형 디커플링 캐패시터로의 응용을 위해 $BaTiO_3$박막을 에어로졸 데포지션 법을 이용하여 12~0.2 ${\mu}m$의 두께로 제조하였고 그 유전특성을 조사하였다. 그결과, 1 MHz에서 permittivity가 70, loss tangent은 3% 이하였으며, capacitance density는 $1{\mu}m$의 두께에서 59 nF/$cm^2$이었다. 하지만, 박막의 두께가 $1{\mu}m$ 이하에서는 XRD를 통해 결정성이 확인 되었음에도 큰 누설전류로 인해 유전특성을 확인할 수 없었다. 이 누설전류의 발생 원인을 조사하기 위해 $BaTiO_3$박막의 표면의 미세구조를 SEM으로 관찰한 결과 여러 결함들이 확인되었으며, 또한 전극 직경의 크기를 1.5 mm에서 0.33 mm로 작게 변화시킴으로서 그 유전특성을 조사하여 박막의 불균일성과 박막화의 가능성을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.118-118
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• 2010

현재 반도체 제조 공정 중 많은 비중을 차지하는 식각 및 증착 공정에는 대부분 플라즈마를 사용하고 있으며, 이러한 반도체 장비내의 공정 부분품들은 수율과 생산성을 향상시키기 위하여 내플라즈마 특성이 우수한 세라믹 또는 세라믹 코팅막으로 구성되어 있다. 더욱이 최근에는 미세공정을 위해 고밀도 플라즈마 공정이 요구되면서, 노출된 세라믹 층이 침식되어 파티클이 떨어져 나오거나 모재와 세라믹 막 사이의 박리현상과 같은 심각한 문제들이 발생되고 있다. 따라서 보다 우수한 내플라즈마 특성을 갖는 세라믹 코팅 기술 개발이 시급한 실정이다. 현재 내플라즈마성 세라믹 코팅막 제조를 위한 코팅기술로서는 주로 용사법이 이용되고 있으나 기공률이 높고 치밀하지 못한 등의 문제점으로 인하여 사용수명이 짧다는 한계에 봉착하였다. 이에 본 연구에서는 상온에서 치밀하고 고속으로 세라믹 후막 형성이 가능한 Aerosol Deposition (AD)법과 AD법의 단점인 edge, corner, hole에서 코팅이 잘 안 되는 점을 보완할 수 있는 Arc Plasma Anodizing (APA)법을 조합하여, 상용화된 Al 모재위에 APA법을 사용하여 $Al_2O_3$ 후막 중간층을 형성한 뒤 그 위에 AD법으로 치밀한 $Al_2O_3$ 후막 성막함으로써 내 플라즈마 향상을 위한 새로운 개념의 제조기술개발을 시도하였다. 이를 위해 우선 Al 모재 위에 APA를 사용하여 중간층인 $Al_2O_3$막을 제조하였으며, 중간층의 두께에 따른 특성을 확인한 결과, $Al_2O_3$중간층의 두께가 두꺼워질수록 표면조도가 증가함을 확인 할 수 있었다. AD법으로 $Al_2O_3$중간층 위에 치밀한 $Al_2O_3$막을 제조하는데 있어 중요인자를 확인하기 위해, AD법으로 중간층 위에 $Al_2O_3$막을 제조한 후 성막특성을 관찰하였다. 그 결과, 중간층의 표면조도가 $0.8-1\;{\mu}m$인 경우에는 수 ${\mu}m$의 두께로 성막 되었으나, 표면조도가 $1\;{\mu}m$ 이상인 $Al_2O_3$중간층 위에서는 성막 되지 않았다. 이를 통해 AD법으로 치밀하고 두꺼운 $Al_2O_3$ 후막을 $Al_2O_3$중간층 위에 성막하기 위해서는 표면조도가 중요인자임을 확인하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.235-243
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• 1997

The high-$T_c$ superconducting phase, $YBa_2Cu_3O_x$, was deposited on the single crystal MgO substrate, using a liquid aerosol feed method in a plasma enhanced chemical vapor deposition(PECVD) reactor. The effect of the plasma distribution depending on the design of a reactor was studied by the analysis of the microstructures of thin films. The particles landed were frequently observed on the films and the two causes that were responsible for the particle deposition were explained. The particles were deposited by the unstable and non-uniform plasma and the low evaporation rate of the precursors. Also, the thin film deposition rate decreased significantly as the distance between the evaporating location and the substrate increased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.229-237
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• 1996

The superconducting phase, $YBa_{2}Cu_{3}O_{x}$ (YBCO), was in-situ deposited on the single crystal MgO substrates, using an aerosol decomposition process in a cold plasma reactor. The solubility and decomposition temperature of the chemical precursors, and the vapor pressures of the solvents, were determined to be the factors crucial to achieving a stoichiometric, crystalline YBCO phase. The deposition parameters for the YBCO phase were 0.3 to 2.7 kPa for the oxygen partial pressure and $800^{\circ}C$ to $940^{\circ}C$ for the substrate temperature. The optimum deposition conditions for the YBCO phase were observed along the CuO decomposition line.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.9
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• pp.541-545
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• 2017

$Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) films with a thickness of $5{\sim}10{\mu}m$ at the morphotropic phase boundary were fabricated by aerosol-deposition (AD), and their phase evolution and electrical properties were investigated. The microstructure of the AD PZT films revealed nanosized grains with a low crystallinity and a dense structure at room temperature. The AD PZT films showed a mixture of tetragonal and rhombohedral phases. The post-annealing temperature was varied to study the phase transition behavior. The crystallinity of the AD PZT films was enhanced by annealing at 450, 550, and $650^{\circ}C$ for 2 h. At $650^{\circ}C$, the tetragonal and rhombohedral phases reacted to form a bridge phase between the two phases. The polarization-electric field hysteresis loops of the AD PZT film annealed at $650^{\circ}C$ exhibited a smaller cohesive field and a lower slim hysteresis than the films annealed at 450 and $550^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.43 no.2 s.285
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• pp.106-113
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• 2006

PMN-PZT films with thickness of $5\;{\mu}m$ were deposited on $Pt/Ti/SiO_2/Si$ substrate at room temperature using aerosol deposition process. The films showed fairly dense microstructure without any crack. XRD and TEM analysis revealed that the films consisted of randomly oriented nanocrystalline and amorphous phases. Post-annealing process was employed to induce crystallization and grain growth of the as-deposited films and to improve the electrical properties. The annealed film showed markedly improved electrical properties in comparison with as-deposited film. The film after annealing at $700^{\circ}C$ for 1h exhibited the best electrical properties. Dielectric constant $(\varepsilon_r)$, remanent polarization $(P_r)$ and piezoelectric constant $(d_{33})$ were 1050, $13\;{\mu}C/cm^2$ and 120 pC/N, respectively.