• Title/Summary/Keyword: adhesion materials

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Electrical Characteristics of Bottom-Contact Organic Thin-Film-Transistors Inserting Adhesion Layer Fabricated by Vapor Deposition Polymerization and Ti Adhesion Metal Layer

  • Park, Il-Houng;Hyung, Gun-Woo;Choi, Hak-Bum;Kim, Young-Kwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.958-961
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    • 2007
  • The electrical characteristics of organic thin-filmtransistor (OTFTs) can be improved by inserting adhesion layer on gate dielectrics. Adhesion layer was used as polymeric adhesion layer deposited on inorganic gate insulators such as silicon dioxide $(SiO_2)$ and it was formed by vapor deposition polymerization (VDP) instead of spin-coating process. The OTFTs obtained the on/off ratio $of{\sim}10^4$, threshold voltage of 1.8V, subthreshold slop of 2.9 V/decade and field effect mobility about $0.01\;cm^2/Vs$.

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Estimation of Interfacial Adhesion through the Micromechanical Analysis of Failure Mechanisms in DLC Film

  • Jeong, Jeung-Hyun;Park, Hae-Seok;Ahn, Jeong-Hoon;Dongil Kwon
    • The Korean Journal of Ceramics
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    • v.3 no.2
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    • pp.73-81
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    • 1997
  • In this paper, it is intended to present more reproducible and quantitative method for adhesion assemssement. In scratch test, micromechanical analysis on the stress state beneath the indenter was carried out considering the additional blister field. The interface adhesion was quantified as work of adhesion through Griffith energy approach on the basis of the analyzed stress state. The work of adhesion for DLC film/WC-Co substrate calculated through the proposed analysis shows the identical value regardless of distinctly different critical loads measured with the change of film thickness and scratching speed. On the other hand, uniaxial loading was imposed on DCL film/Al substrate, developing the transverse film cracks perpendicular to loading direction. Since this film cracking behavior depends on the relative magnitude of adhesion strength to film fracture strength, the quantification of adhesion strength was given a trial through the micromechanical analysis of adhesion-dependence of film cracking patterns. The interface shear strength can be quantified from the measurement of strain $\varepsilon$s and crack spacing $\lambda$ at the cessation of film cracking.

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Adhesion Performance and Curing Behaviors of Acid-free Acrylic PSAs Using Two Types of Curing Agents (Acid-free 아크릴계 점착제의 접착 물성 및 경화거동 연구)

  • Lee, Seung-Woo;Park, Ji-Won;Kwon, Young-Eun;Kim, Hyun-Joong
    • Journal of Adhesion and Interface
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    • v.12 no.2
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    • pp.67-72
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    • 2011
  • Acrylic pressure-sensitive adhesives are used in many different parts in the world. But acrylic acid in PSAs may occur unexpected results such as corroding adherends or producing by-products when applied within electronic devices. This study employed acrylic PSAs based on 2-ethylhexyl acrylate (2-EHA), 2-hydroxyethyl acrylate (2-HEA) and butyl acrylate (BA) with different coating thickness. There are two types of curing agents. One is methylaziridine derivative (MAZ) and the other is aluminum acetylacetonate (AlACA). This study examined the adhesion performance and curing behaviors using peel strength, probe tack and gel fraction. Also, the viscoelastic properties of acrylic PSAs were investigated from Advanced rheometric expansion system (ARES).

Electrical Effects of the Adhesion Layer Using the VDP Process on Dielectric

  • Lee, Dong-Hyun;Pyo, Sang-Woo;Hyung, Gun Woo;Kim, Young-Kwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1313-1316
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    • 2005
  • In the present paper, it was investigated that adhesion layer on gate insulator could affect the electrical characteristics for the organic thin film transistors (OTFTs). The polyimide (PI) as organic adhesion layer was fabricated by using the vapor deposition polymerization (VDP) processing . It was found that electrical characteristics improved comparing OTFTs using adhesion layer to another. We researched adhesion layer as a function of thickness. For inverted-staggered top contact structure, field effect mobility, threshold voltage, and on-off current ratio of OTFTs using adhesion layer of PI 15 nm thickness on the gate insulator with a thickness of 0.2 ${\mu}m$ were about 0.5 $cm^2/Vs$, -0.8 V, and $10^6$, respectively.

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