• The Journal of the Korea Contents Association
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• v.13 no.10
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• pp.54-61
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• 2013

This paper presents a simplified hardware based edge detection circuit which is based on an analog correlator combining with the neighbor pixels in CMOS image sensor. A pixel element of the edge detector consists of an active pixel sensor and an analog correlator circuit which connects two neighbor pixels. The edge detector shares a comparator on each column that the comparator decides an edge of the target pixel with an adjustable reference voltage. The circuit detects image edge from CIS directly that reduces area and power consumption 4 times and 20%, respectively, compared with the previous works. And also it has advantage to regulate sensitivity of the edge detection because the threshold value is able to control externally. The fabricated chip has 34% of fill factor and 0.9 ${\mu}W$ of power per a pixel under 0.18 ${\mu}m$ CMOS technology.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.2
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• pp.104-110
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• 2011

A CMOS Image Sensor (CIS) mounted on mobile appliances requires low power consumption due to limitations of the battery life cycle. In order to reduce the power consumption of CIS, we propose novel power reduction techniques such as a data flip-flop circuit with leakage current elimination and a low power single slope analog-to-digital (A/D) converter with a sleep-mode comparator. Based on 0.13 ${\mu}m$ CMOS process, the chip satisfies QVGA resolution (320 ${\times}$ 240 pixels) that the cell pitch is 2.25 um and the structure is a 4-Tr active pixel sensor. From the experimental results, the performance of the CIS has a 10-b resolution, the operating speed of the CIS is 16 frame/s, and the power dissipation is 25 mW at a 3.3 V(analog)/1.8 V(digital) power supply. When we compare the proposed CIS with conventional ones, the power consumption was reduced by approximately 22% in the sleep mode, and 20% in the active mode.

• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.332-336
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• 2014

In this paper, we propose a complementary metal oxide semiconductor (CMOS) binary image sensor with a gate/body-tied (GBT) PMOSFET-type photodetector for high-speed operation. The GBT photodetector of an active pixel sensor (APS) consists of a floating gate ($n^+$-polysilicon) tied to the body (n-well) of the PMOSFET. The p-n junction photodiode that is used in a conventional APS has a good dynamic range but low photosensitivity. On the other hand, a high-gain GBT photodetector has a high level of photosensitivity but a narrow dynamic range. In addition, the pixel size of the GBT photodetector APS is less than that of the conventional photodiode APS because of its use of a PMOSFET-type photodetector, enabling increased image resolution. A CMOS binary image sensor can be designed with simple circuits, as a complex analog to digital converter (ADC) is not required for binary processing. Because of this feature, the binary image sensor has low power consumption and high speed, with the ability to switch back and forth between a binary mode and an analog mode. The proposed CMOS binary image sensor was simulated and designed using a standard CMOS $0.18{\mu}m$ process.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.402-403
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• 2009

A variety of power reduction technologies is introduced and the benefits of the technologies are discussed. PenTile$^{(R)}$ DBLC (Dynamic Brightness LED Control) combined with SABC (Sensor-Based Adaptive Brightness Control) enables to achieve the average LED power consumption to one third. The panel power reduction of 25% can be achieved with low power driving technology, ALS (Active Level Shifter). MIP (Memory In Pixel) is expected to be useful in transflective display because the whole display area can be utilized in reflective mode with power consumption of 1mW.

• Journal of Sensor Science and Technology
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• v.19 no.4
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• pp.285-290
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• 2010

In this paper, a dynamic range(DR) extension technique based on a 3-transistor active pixel sensor(APS) and dual image sampling is proposed. The feature of the proposed APS is that the APS uses two or more photodiodes with different sensitivities, such as a high-sensitivity photodiode and a low-sensitivity photodiode. Compared with previously proposed wide DR(WDR) APS, the proposed approach has several advantages, such as no-external equipments or signal processing, no-additional time-requirement for additional charge accumulation, simple operation and adjustable DR extension by controlling parasitic capacitance and sensitivity of two photodiodes. Approximately 16 dB of DR extension was evaluated from the simulation for the situation of 10 times of sensitivity difference and the same size of parasitic capacitance between those two photodiodes.

• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.425-431
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• 2023

An asymmetric metal-semiconductor-metal Al_0.24Ga_0.76N ultraviolet (UV) sensor was fabricated, and the effects of local Joule heating were investigated. After dielectric breakdown, the current density under a reverse bias of 2.0 V was 1.1×10^-9 A/cm², significantly lower than 1.2×10^-8 A/cm² before dielectric breakdown; moreover, the Schottky behavior of the Ti/Al/Ni/Au electrode changed to ohmic behavior under forward bias. The UV-to-visible rejection ratio (UVRR) under a reverse bias of 7.0 V before dielectric breakdown was 87; however, this UVRR significantly increased to 578, in addition to providing highly reliable responsivity. Transmission electron microscopy revealed interdiffusion between adjacent layers, with nitrogen vacancies possibly formed owing to local Joule heating at the AlGaN/Ti/Al/Ni/Au interfaces. X-ray photoelectron microscopy results revealed decreases in the peak intensities of the O 1s binding energies associated with the Ga-O bond and OH-, which act as electron-trapping states on the AlGaN surface. The reduction in dark current owing to the proposed local heating method is expected to increase the sensing performance of UV optoelectronic integrated devices, such as active-pixel UV image sensors.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.12
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• pp.122-130
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• 2010

This paper presents an active ranging system based on laser structured-light image. The structured-light image processing is computationally efficient in comparison with the conventional stereo image processing, since the burdensome correspondence problem is avoidable. In order to achieve robustness against environmental illumination noise, an efficient image processing algorithm, i.e., integration of difference images with structured-light modulation is proposed. Distance equation from the measured structured light pixel distance and system parameter calibration are addressed in this paper. Experiments and analysis are carried out to verify performance of the proposed ranging system.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.10 s.352
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• pp.22-27
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• 2006

In this paper, we propose a method that can generate a computer-generated hologram (CGH) from the depth stream and color image outputs provided by an active sensor add-on camera. Distinguished from an existing holographic display system that uses a computer graphic model to generate CGH, this method utilizes a real camera image including a depth information for each object captured by the camera, as well as color information. This procedure consists of two steps that the acquirement of a depth-annotated image of real object, and generation of CGH according to the 3D information that is extracted from the depth cue. In addition, we display the generated CGH via a holographic display system. In experimental system we reconstruct an image made from CGH with a reflective LCD panel that had a pixel-pitch of 10.4um and resolution of 1408X1050.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.12
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• pp.1128-1139
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• 2013

KOMPSAT-5(KOrea Multi-Purpose SATellite-5) has a benefit of continuously conducting its mission in all weather and even night by loading SAR(Synthetic Aperture Radar) payload, which is different from optical sensor of KOMPSAT-2 satellite. During IOT(In-Orbit Test) periods, SAR image calibration should be conducted through ground target of which location and RCS is pre-determined. Differently from the conventional corner reflector, active transponder has a capability to change its internal transfer gain and delay, which allows active transponder to be shown in a pixel of SAR image with very high radiance and virtual location. In this paper, the development of active transponder is presented from design to I&T(Integration and Test).

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.38 no.3
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• pp.300-308
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• 2010

In order to accelerate the evolution of faster, better, cheaper spacecraft, it is evident that greatly enhanced general-purpose attitude determination methods are needed Currently, star tracker sensors based on charge coupled devices (CCD) or active pixel sensors(APS) enable one to obtain the best spacecraft attitude estimation among the existing sensors for attitude determination. In this paper, basic principles of star tracker technology are explained including major issues arising in design and development of star tracker. Also, an historical overview and worldwide survey associated with various star trackers from star scanner through microelectromechanical system(MEMS)-based star tracker is offered.