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Operation of a wide dynamic range CMOS image sensor based on dual sampling mechanism and its SPICE simulation

이중 샘플링 기반의 넓은 동작 범위 CMOS 이미지 센서의 동작 및 시뮬레이션을 통한 특성 분석

  • Kong, Jae-Sung (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Jo, Sung-Hyun (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Lee, Soo-Yeun (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Choi, Kyung-Hwa (Department of Sensor and Display Engineering, Kyungpook National University) ;
  • Seo, Sang-Ho (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Shin, Jang-Kyoo (School of Electrical Engineering and Computer Science, Kyungpook National University)
  • 공재성 (경북대학교 전기전자컴퓨터학부) ;
  • 조성현 (경북대학교 전기전자컴퓨터학부) ;
  • 이수연 (경북대학교 전기전자컴퓨터학부) ;
  • 최경화 (경북대학교 센서 및 디스플레이공학과) ;
  • 서상호 (경북대학교 전기전자컴퓨터학부) ;
  • 신장규 (경북대학교 전기전자컴퓨터학부)
  • Received : 2010.01.08
  • Accepted : 2010.06.14
  • Published : 2010.07.31

Abstract

In this paper, a dynamic range(DR) extension technique based on a 3-transistor active pixel sensor(APS) and dual image sampling is proposed. The feature of the proposed APS is that the APS uses two or more photodiodes with different sensitivities, such as a high-sensitivity photodiode and a low-sensitivity photodiode. Compared with previously proposed wide DR(WDR) APS, the proposed approach has several advantages, such as no-external equipments or signal processing, no-additional time-requirement for additional charge accumulation, simple operation and adjustable DR extension by controlling parasitic capacitance and sensitivity of two photodiodes. Approximately 16 dB of DR extension was evaluated from the simulation for the situation of 10 times of sensitivity difference and the same size of parasitic capacitance between those two photodiodes.

Keywords

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