• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2018년도 추계학술대회
• /
• pp.155-156
• /
• 2018

This paper presents a control method for grid-connected Active-NPC inverter systems. NPC (Neutral Point Clamped) is widely used in power conversion systems. NPC has a loss of switching elements and voltage imbalance. Active NPC has been proposed to overcome these drawbacks. ANPC changed the neutral diode to IGBT to reduce the switching loss. This paper modeled a grid-connected Acitve-NPC inverter systems and analyzed its performance. DSOGI PLL was used as a phase control method for precise control of grid link voltage. The proposed method is verified by PSIM simulation.

• 한국광학회지
• /
• 제23권1호
• /
• pp.42-51
• /
• 2012

본 논문에서는 패브리 페롯 레이저 다이오드(FP-LD : Fabry-Perot LD)에서 활성층 구조에 따른 주입 잠금 특성을 비교하였다. 편광 및 무편광 다중양자우물 구조와 무편광 벌크 구조의 이득 스펙트럼 및 주입 캐리어 밀도에 따른 최대 이득 특성을 TE, TM 편광에 대하여 계산하였다. 계산된 이득 파라미터를 시영역 대신호 모델에 적용하여 FP-LD의 주입 잠금 특성을 확인한 결과, 무편광 FP-LD가 편광 FP-LD 에 비하여 RIN(Relative Intensity Noise) 특성 면에서 약 3 dB 정도 우수하고, 2.5 Gbps 변조시에 아이 특성이 훨씬 우수함을 알 수 있다.

• 전기학회논문지
• /
• 제56권1호
• /
• pp.112-116
• /
• 2007

We have investigated the hysteresis phenomenon of a hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and analyzed the effect of hysteresis phenomenon when a-Si:H TFT is a pixel element of active matrix organic light emitting diode (AMOLED). When a-Si:H TFT is addressed to different starting gate voltages, such as 10V and 5V, the measured transfer characteristics with 1uA at $V_{DS}$ = 10V shows that the gate voltage shift of 0.15V is occurred due to the different quantities of trapped charge. When the step gate-voltage in the transfer curve is decreased from 0.5V to 0.05V, the gate-voltage shift is decreased from 0.78V to 0.39V due to the change of charge do-trapping rate. The measured OLED current in the widely used 2-TFT pixel show that a gate-voltage of TFT in the previous frame can influence OLED current in the present frame by 35% due to the change of interface trap density induced by different starting gate voltages.

• Journal of Power Electronics
• /
• 제12권4호
• /
• pp.528-537
• /
• 2012

This paper presents an interleaved resonant converter with a parallel-series transformer connection in order to achieve ripple current reduction at the output capacitor, zero voltage turn-on for the active switches, zero current turn-off for the rectifier diodes, less voltage stress on the rectifier diodes, and less current stress on the transformer primary windings. The primary windings of the two transformers are connected in parallel in order to share the input current and to reduce the root-mean-square (rms) current on the primary windings. The secondary windings of the two transformers are connected in series in order to ensure that the transformer primary currents are balanced. A full-wave diode rectifier is used at the output side to clamp the voltage stress of the rectifier diode at the output voltage. Two circuit modules are operated with the interleaved PWM scheme so that the input and output ripple currents are reduced. Based on the resonant behavior, all of the active switches are turned on under zero voltage switching (ZVS), and the rectifier diodes are turned off under zero current switching (ZCS) if the operating switching frequency is less than the series resonant frequency. Finally, experiments with a 1kW prototype are described to verify the effectiveness of the proposed converter.

• Journal of Korean Vacuum Science & Technology
• /
• 제6권3호
• /
• pp.126-132
• /
• 2002

The origin of image-sticking in metal-insulator-metal type thin-film diode liquid crystal displays(TFD-LCDs) is the asymmetric current-voltage(I-V) characteristic of TFD element. We developed that TFD-LCDs have reduced-image-sticking. Tantalum pentoxide(Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal(MIM) capacitors in switching devices for active-matrix liquid crystal displays(AM-LCDs). High quality Ta$_2$O$\sub$5/ thin films have been obtained from anodizing method. We fabricated a TFD element using Ta$_2$O$\sub$5/ films which had perfect current-voltage symmetry characteristics. We applied novel process technologies which were postannealed whole TFD element instead of conventional annealing to the fabrication. One-Time Post-Annealing(OPTA) heat treatment process was introduced to reduce the asymmetry and shift of the I-V characteristics, respectively. OPTA means that the whole layers of lower metal, insulator, and upper metal are annealed at one time. Futhermore, in this paper, we discussed the effects of top-electrode metals and annealing conditions.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.882-885
• /
• 2004

Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nanoscale components and Si-technology. In this study, molecular electronic devices were fabricated with amion style derivatives as redox-active component to compare to the devices using Zn-Porphyrin derivatives. This molecule is amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method, and then this LB monolayer is inserted between two metal electrodes. According to current-voltage (I-V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. Diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with the organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and the top Al electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.95-96
• /
• 2008

A new voltage-driven pixel circuit using soluble-processed organic thin film transistors (OTFTs) for an active matrix organic light emitting diode (AMOLED) is proposed. The proposed circuit is composed of four switching TFTs, one driving TFT and one storage capacitor. The proposed circuit can compensate for the degradation of OLED current caused by the threshold voltage shift of the OTFT. The simulation results show that the variation of OLED current corresponding to a 3V threshold voltage shift is decreased by 30% compared to the conventional 2TlC structure.

• 한국광학회지
• /
• 제28권5호
• /
• pp.229-235
• /
• 2017

U형 구조의 SGDBR (Sampled Grating Distributed Bragg Reflector) 레이저 다이오드를 설계하고, 시간 영역 시뮬레이션 방법으로 해석하였다. U형 구조의 SGDBR 레이저 다이오드는 SGDBR, 능동, 수동, TIR (Total Internal Reflection) 거울 영역들로 이루어져 있어서, 각 영역들 간의 결합 손실의 영향을 면밀히 고려하여야 한다. 설계된 U형 SGDBR 레이저 다이오드의 파장 가변범위는 1525 nm에서부터 1570 nm로서 시뮬레이션을 통하여 확인하였다. 설계 튜닝 범위에서 완전한 레이저 다이오드 특성을 얻기 위해서는, 미러 영역에서의 손실은 약 2 dB 이하이고, 능동 및 수동 영역 간 butt 결합에서의 매질 간 굴절률 차이는 0.1 이하를 유지하도록 도파 구조가 설계되어야 한다.

• 전자공학회논문지
• /
• 제54권1호
• /
• pp.33-38
• /
• 2017

본 논문에서는 채널 당 3.125-Gb/s 동작 속도를 갖는 4-채널 공통-캐소드 VCSEL 다이오드 드라이버 어레이 칩을 구현하였다. 스위칭 동작하는 메인 드라이버의 동작속도 향상을 위해, 액티브 인덕터를 사용한 전치증폭단과 이퀄라이저 기능을 탑재한 입력버퍼단으로 구성하였다. 특히 개선된 입력버퍼단의 경우, 주파수 영역의 피킹으로 대역폭 증대뿐 아니라 비교적 적은 전류로 동작하도록 설계하였다. 본 논문에서 사용한 VCSEL 다이오드는 2.2 V 순방향 전압과 $50{\Omega}$ 기생저항 및 850 fF 기생 캐패시턴스를 갖는다. 또한, 3.0 mA 변조전류 및 3.3 mA 바이어스 전류로 동작하므로, 두 개의 독립적인 전류소스로 구동 가능한 current steering 기반의 메인 드라이버를 설계하였다. 제안한 4-채널 광 송신기 어레이 칩은 $0.11-{\mu}m$ CMOS 공정을 이용하여 제작하였다. 칩 코어의 면적은 $0.15{\times}0.18{\mu}m^2$ 이며, 채널 당 22.3 mW 전력소모를 갖는다.

• 전자공학회논문지A
• /
• 제32A권10호
• /
• pp.43-50
• /
• 1995

A laser diode(LD) structure consisting of a single 150$\AA$ $Al_{0.07}$Ga$_{0.93}$As quantum well active region operating at ${\lambda}$=809nm, cladded with an AlGaAs graded-index separate confinement heterostructure, has bes been grown by MOCVD. Temperature coefficient of wavelength is approximately 0.2nm $^{\circ}C$ for the diode. The active aperture consists of five emitters separated from each other by means of SiO$_{2}$ deposition and stripe formation, which creates insulating regions that channel the current to 100-$\mu$m-wide stripes placed on 450-$\mu$m centers. From a typical uncoated LD, the output power of 0.8W has been obtained at a 1$\mu$s, 1kHz pulsed current level of 2.0$\AA$, which results in about 64% external quantum efficiency. The threshold current density is 736A/cm$^{2}$ for the case of 500$\mu$m cavity length LD's. The measure of an internal quantum efficiency was 75.8% and the internal loss 4.83$cm^{-1}$ . Finally, 3.1W output power has been obtained at a 1$\mu$s, 1kHz pulsed current level of 9A from the 500$\mu$m-aperture LD array with 460-$\mu$m- cavity length.