• Title/Summary/Keyword: a.c. characteristics

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The Contact Characteristics of Ferroelectrics Thin Film and a-Si:H Thin Film (강유전성 박막의 형성 및 수소화 된 비정질실리콘과의 접합 특성)

  • 허창우
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.05a
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    • pp.501-504
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    • 2003
  • In this paper, for enhancement of property on a-Si:H TFTs We measure interface characteristics of ferroelectrics thin film and a-Si:H thin film. First, SrTiO$_3$ thin film is deposited bye-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at 150$^{\circ}C$ ∼ 600$^{\circ}C$. Dielectric characteristics of deposited SrTiO$_3$ films are very good because dielectric constant shows 50∼100 and breakdown electric field are 1∼1.5MV/cm. a-SiN:H,a-Si:H(n-type a-Si:H) are deposited onto SrTiO$_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. After the C-V measurement for interface characteristics, MFNS structure shows no difference with MNS(Metal/a-SiN:H/a-Si:H) structure in C-V characteristics but the insulator capacitance value of MFNS structure is much higher than the MNS because of high dielectric constant of ferroelectrics.

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CoolSiCTM SiC MOSFET Technology, Device and Application

  • Ma, Kwokwai
    • Proceedings of the KIPE Conference
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    • 2017.07a
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    • pp.577-595
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    • 2017
  • ${\bullet}$ Silicon Carbide (SiC) had excellent material properties as the base material for next generation of power semiconductor. In developing SiC MOSFET, gate oxide reliability issues had to be first overcome before commercial application. Besides, a high and stable gate-source voltage threshold $V_{GS(th)}$ is also an important parameter for operation robustness. SiC MOSFET with such characteristics can directly use existing high-speed IGBT gate driver IC's. ${\bullet}$ The linear voltage drop characteristics of SiC MOSFET will bring lower conduction loss averaged over full AC cycle compared to similarly rate IGBT. Lower switching loss enable higher switching frequency. Using package with auxiliary source terminal for gate driving will further reduce switching losses. Dynamic characteristics can fully controlled by simple gate resistors. ${\bullet}$ The low switching losses characteristics of SiC MOSFET can substantially reduce power losses in high switching frequency operation. Significant power loss reduction is also possible even at low switching frequency and low switching speed. in T-type 3-level topology, SiC MOSFET solution enable three times higher switching freqeuncy at same efficiency.

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A Study on the Microstructure and Electrical Characteristics of ZnO Varistor for d.c. Arrester (소결 조건 변화에 따른 직류 피뢰기용 ZnO 바리스터의 미세구조 및 전기적 성질에 관한 연구)

  • Kim, Seok-Sou;Choi, Ike-Sun;Park, Tae-Gon;Cho, I-Gon;Park, Choon-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.6
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    • pp.683-689
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    • 2004
  • The microstructure and electrical characteristics of A ∼ C's ZnO varistors fabricated according to variable sintering condition, which sintering temperature was 1130 $^{\circ}C$ and speeds of pusher were A: 2 mm/min, B: 4 mm/min, C: 6 mm/min, respectively, were investigated. The experimental results obtained from this study were summarized as follows: The sintering density of A ∼C's ZnO varistors sintered at 1130 $^{\circ}C$ were decreased by sintering keep time to shorten, such as A: 9hour, B: 4.5hour and C: 3hour. A's ZnO varistor exhibited good densification nearly 98 % of theory density. In the microstructure, A∼C's ZnO varistors fabricated variable sintering condition was consisted of ZnO grain(ZnO), spinel phase(Z $n_{2.33}$S $b_{0.67}$ $O_4$), Bi-rich phasc(B $i_2$ $O_3$), wholly. Varistor voltage of A∼C's ZnO varistors sintered at 1130 $^{\circ}C$ increased in order A

The characteristics of D.C. switching threshold voltage for amorphous $As_{10}Ge_{15}Te_{75}$ thin film (비정질 $As_{10}Ge_{15}Te_{75}$박막의 D.C. 스위칭 임계전압 특성)

  • 이병석;이현용;이영종;정홍배
    • Electrical & Electronic Materials
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    • v.9 no.8
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    • pp.813-818
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    • 1996
  • Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$ device shows the memory switching characteristics under d.c. bias. In bulk material, a-As$_{10}$Ge$_{15}$ Te$_{75}$ switching threshold voltage (V$_{th}$) is very high (above 100 volts), but in the case of thin film, V$_{th}$ decreases to a few or ten a few volts. The characteristics of V$_{th}$ depends on the physical dimensions such as the thickness of thin film and the separation between d.c. electrodes, and the annealing conditions. The switching threshold voltage decreases exponentially with increasing annealing temperature and annealing time, but increases linearly with the thickness of thin film and exponentially with increasing the separation between d.c. electrodes. The desirable low switching threshold voltage, therefore, can be obtained by the stabilization through annealing and changing physical dimensions.imensions.sions.

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Fermentation Characteristics and Microbial Diversity of Tropical Grass-legumes Silages

  • Ridwan, Roni;Rusmana, Iman;Widyastuti, Yantyati;Wiryawan, Komang G.;Prasetya, Bambang;Sakamoto, Mitsuo;Ohkuma, Moriya
    • Asian-Australasian Journal of Animal Sciences
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    • v.28 no.4
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    • pp.511-518
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    • 2015
  • Calliandra calothyrsus preserved in silage is an alternative method for improving the crude protein content of feeds for sustainable ruminant production. The aim of this research was to evaluate the quality of silage which contained different levels of C. calothyrsus by examining the fermentation characteristics and microbial diversity. Silage was made in a completely randomized design consisting of five treatments with three replications i.e.: R0, Pennisetum purpureum 100%; R1, P. purpureum 75%+C. calothyrsus 25%;, R2, P. purpureum 50%+C. calothyrsus 50%; R3, P. purpureum 25%+C. calothyrsus 75%; and R4, C. calothyrsus 100%. All silages were prepared using plastic jar silos (600 g) and incubated at room temperature for 30 days. Silages were analyzed for fermentation characteristics and microbial diversity. Increased levels of C. calothyrsus in silage had a significant effect (p<0.01) on the fermentation characteristics. The microbial diversity index decreased and activity was inhibited with increasing levels of C. calothyrsus. The microbial community indicated that there was a population of Lactobacillus plantarum, L. casei, L. brevis, Lactococcus lactis, Chryseobacterium sp., and uncultured bacteria. The result confirmed that silage with a combination of grass and C. calothyrsus had good fermentation characteristics and microbial communities were dominated by L. plantarum.

Effects of Alloying Elements(Cr, Mo, N) on Repassivation Characteristics of Stainless Steels Studied by the Abrading Electrode Technique and A.C Impedance Spectroscopy (마멸 전극 기법과 교류 임피던스법으로 연구한 스테인리스강의 합금원소(Cr, Mo, N)가 재부동태 특성에 미치는 영향)

  • Ham Dong-Ho;Kim Suk-Won;Lee Jae-Bong
    • Journal of the Korean Electrochemical Society
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    • v.3 no.4
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    • pp.211-218
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    • 2000
  • The effects of alloying elements, Cr, Mo, and N on repassivation characteristics of stainless steels were investigated by using the abrading electrode technique and a.c impedance spectroscopy. The role of alloying elements on the stability of passive film and their repassivation characteristics were examined using alloy steels such as Fe-Cr, Fe-Cr-Mo, 304, 304LN, 316, and 316LN. The electrochemical characteristics of the passive film were investigated by in-situ d.c. and a.c. electrochemical methods. Localized corrosion resistance is believed to have much to do with the stability and repassivation characteristics of the passive film. The effects of alloying elements on the current transients and repassivation kinetics were systematically examined by using the abrading electrode technique and a.c. impedance spectroscopy. The experimental results were analyzed in order to elucidate the relationship between passive film stability, repassivation characteristics, and alloying elements.

An Experimental Investigation on the Operating Characteristics of a Reversible Loop Heat Pipe (가역 루프 히트파이프의 작동특성에 관한 실험적 연구)

  • Kim Bong-Hun;Choi Joon-Min
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.18 no.3
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    • pp.231-239
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    • 2006
  • An experimental investigation of a Reversible Loop Heat Pipe (RLHP) was conducted to determine the operating limits and performance characteristics as functions of the thermophysical parameters, the heat input, and the cooling intensity. Variations in both temperature and heat transport capacity were measured and analyzed in order to accurately evaluate the transient operating characteristics. In addition, the maximum heat transport as a function of the mean evaporator temperature, the ratio of heat transport to heater input power as a function of the mean evaporator temperature, and the overall thermal resistance as a function of the overall heat transport capacity were examined as well. Results indicated that the cooling intensity played an important role on the operating characteristics and performance limitation. The maximum heat transports corresponding to cooling intensity $72W/^{\circ}C$ and $290W/^{\circ}C$ were 446 W and 924 W, respectively. Also, observation of the startup characteristics indicated that the mean evaporator temperature should be maintained between $40^{\circ}C$ and $60^{\circ}C$, and overall thermal resistance were measured as $0.02^{\circ}C/W$.

A Preliminary Study on the Lamination Characteristics of Inconel 718 Superalloy on S45C Structural Steel using LENS Process (LENS 공정을 이용한 Inconel 718 초합금의 S45C 구조용강 위 적층 특성 고찰에 관한 기초 연구)

  • Kim, Hyun-Sik;Lee, Hyub;Ahn, Dong-Gyu
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.20 no.1
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    • pp.16-24
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    • 2021
  • A laser-engineered net shaping (LENS) process is a representative directed energy deposition process. Deposition characteristics of the LENS process are greatly dependent on the process parameters. The present paper preliminarily investigates deposition characteristics of Inconel 718 superalloy on S45C structural steel using a LENS process. The influence of process parameters, including the laser power and powder feed rate, on the characteristics of the bead formation and the dilution in the vicinity of the deposited region is examined through repeated experiments. A processing map and feasible deposition conditions are estimated from viewpoints of the aspect ratio, defect formation, and the dilution rate of the deposited bead. Finally, an appropriate deposition condition considering side angle, deposition ratio, and buy-to-fly (BTF) is predicted.

Direct Bonding Characteristics of 2" 3C-SiC Wafers for Harsh Environment MEMS Applications (극한 환경 MEMS용 2" 3C-SiC기판의 직접접합 특성)

  • 정귀상
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.8
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    • pp.700-704
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    • 2003
  • This paper describes on characteristics of 2" 3C-SiC wafer bonding using PECVD (plasma enhanced chemical vapor deposition) oxide and HF (hydrofluoride acid) for SiCOI (SiC-on-Insulator) structures and MEMS (micro-electro-mechanical system) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si (001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR (attenuated total reflection Fourier transformed infrared spectroscopy). The root-mean-square suface roughness of the oxidized SiC layers was measured by AFM (atomic force microscope). The strength of the bond was measured by tensile strength meter. The bonded interface was also analyzed by IR camera and SEM (scanning electron microscope), and there are no bubbles or cavities in the bonding interface. The bonding strength initially increases with increasing HF concentration and reaches the maximum value at 2.0 % and then decreases. These results indicate that the 3C-SiC wafer direct bonding technique will offers significant advantages in the harsh MEMS applications.ions.