• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.190-197
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• 2002

In this thesis, ZnO varistors with various formulation, such as A∼E, were fabricated according to ceramic fabrication method. The microstructure, electrical properties, and surge characteristics of ZnO varistors were investigated according to ZnO varistors with various formulation. In the microstructure, A∼E\`s ZnO varistor ceramics sintered at 1130$\^{C}$ was consisted of ZnO grain(ZnO), spinel phase (Zn$\_$2.33/Sb$\_$0.67/O$\_$4/), Bi-rich phase(Bi$_2$O$_3$) and intergranuler phase, wholly. Lightning impulse residual voltage of A, B, C and E\`s ZnO varistors suited standard characteristics, below 12kV at current of 5kA. On the contrary, D\`s ZnO varistor exhibited high residual voltage as high reference voltage. In the accelerated aging test, leakage current and watt loss of B, C and D\`s ZnO varistors increases abruptly with stress time under the first a.c. stress(115$\^{C}$/3.213kV/300h). Consequently, C varistor exhibited a thermal run away. On the contrary, leakage current and watt loss of A and C\`s ZnO varistors which show low initial leakage current exhibited constant characteristics. After high current impulse test, A\`s ZnO varistor has broken the side of varistor but impulse current flowed. On the contrary, E\`s ZnO Varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After long duration impulse current test, E\`s ZnO varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After high current impulse test and long duration impulse current test, E\`s ZnO varistor exhibited very good characteristics which variation rate of residual voltage is 1.4% before and after test.

• Korean Journal of Food Science and Technology
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• v.33 no.2
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• pp.195-199
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• 2001

A study was carried out to establish a detection method for irradiated black pepper using amylograph characteristics. The maximum viscosity, viscosity at $93^{\circ}C$, viscosity after 15 min at $93^{\circ}C$, viscosity at $45^{\circ}C$, viscosity after 30 min at $45^{\circ}C$, and viscosity after 60 min at $45^{\circ}C$ decreased with increasing irradiation doses, but initial pasting temperatures, maximum viscosity temperatures, breakdown, setback, and consistency did not show great changes. The high correlation coefficients $(R^2>0.97)$ were shown between irradiation doses and amylograph characteristics except for breakdown $(R^2>0.75)$, setback $(R^2>0.88)$ and consistency $(R^2>0.31)$. These results suggest that detection of irradiated black pepper is possible using amylograph characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.195-196
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• 2009

This paper describes the fabrication and characteristics of polycrystalline 3C-SiC thin film diodes for extreme environment applications, in which the this thin film was deposited onto oxidized Si wafers by APCVD using HMDS In this work, the optimized growth temperature and HMDS flow rate were $1,100^{\circ}C$ and 8sccm, respectively. A Schottky diode with a Au, Al/poly 3C-SiC/$SiO_2$/Si(n-type) structure was fabricated and its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84V, over 140V, 61nm, and $2.7{\times}10^{19}cm^2$, respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and $500^{\circ}C$ for 30min under a vacuum of $5.0{\times}10^{-6}$Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.3
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• pp.111-116
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• 2004

The Ni/SiC Schottky diode was fabricated with the $\alpha$-SiC thin film grown by the ICP-CVD method on a (111) Si wafer. $\alpha$-SiC film has been grown on a carbonized Si layer in which the Si surface was chemically converted to a very thin SiC layer achieved using an ICP-CVD method at $700^{\circ}C$. To reduce defects between the Si and $\alpha$-SiC, the surface of the Si wafer was slightly carbonized. The film characteristics of $\alpha$-SiC were investigated by employing TEM (Transmission Electron Microscopy) and FT-IR (Fourier Transform Infrared Spectroscopy). Sputterd Ni thin film was used as the anode metal. The boundary status of the Ni/SiC contact was investigated by AES (Auger Electron Spectroscopy) as a function of the annealing temperature. It is shown that the ohmic contact could be acquired beyond a 100$0^{\circ}C$ annealing temperature. The forward voltage drop at 100A/cm was I.0V. The breakdown voltage of the Ni/$\alpha$-SiC Schottky diode was 545 V, which is five times larger than the ideal breakdown voltage of the silicon device. As well, the dependence of barrier height on temperature was observed. The barrier height from C- V characteristics was higher than those from I-V.

• Journal of the Korean Ceramic Society
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• v.27 no.4
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• pp.560-566
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• 1990

The early hydration characteristics according to the C3A polymorphism and the presence of gypsum, in order to establish the hydration mechanism of the system C3S-C3A, have been studied. The hydration rate of C3A was changed according to the its crystal structure and influenced the hydration of C3S. That is, the hydration rate of C3S was accelerated in case of orthorhombic-C3A, but that was slightly retarded in case of melt-C3A than that of cubic-C3A. In the system C3S-C3A-gypsum, the retardation phenomenon of the reaction of monosulfate formation was observed in case of both orthorhombic and melt-C3A.

• Journal of the Korean Ceramic Society
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• v.26 no.4
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• pp.514-520
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• 1989

The early hydration characteristics according to the C3S/C3A ratio and presence of gypsum, in order to establish the hydration mechanism of the system C3S-C3A, have been studied. The rate of C3S dissolution in the system C3S-Gypsum was higher than that in the system C3S. Consequently, the induction period was reduced and the rate of Ca(OH)2 formation in the accleration period was increased. The hydration of C3S in the system C3S-C3A was retarded because Al3+ in the liquid phase originating from the hydration of C3A was incorporated into calcium hydrosilicates formed. The retardation phenomenon of C3S hydration was not appeared in the system C3S-C3A-gypsum because the reaction of monosulfate formation became the rate-determining step.

• Journal of the Korean Ceramic Society
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• v.27 no.8
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• pp.1055-1063
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• 1990

The early hydration characteristics of the system $C_3S-C_3A-C_4AF$ according to the clinker composition variations, in order to establish the mutual interactionof clinker minerals during the portland cement hydration, have been studied. The early hydration rate of $C_3S$ was greatly effected by the change of $C_3S/C_3A$ ratio. The lower the $C_3S/C_3A$ ratio was, the faster the apex reaching time and the rate of heat liberation of the 2nd exothermic peak originating from the formation of $Ca(OH)_2$ were. The effect of $C_3S/C_3A$ ration on the amounts of $Ca(OH)_2$ formation was decreased, in process of hydration time, but the effect of $C_3S$ content was increased.

• Journal of Sensor Science and Technology
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• v.18 no.3
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• pp.207-209
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• 2009

This paper describes the characteristics of poly 3C-SiC micro resonators with $3{\times}10^{17}{\sim}1{\times}10^{19}cm^{-3}$ doping concentrations. The 1.2 ${\mu}m$ thick cantilever and the 0.4 ${\mu}m$ thick doubly clamped beam resonators with different lengths were fabricated using poly 3C-SiC thin films. The characteristics of poly 3C-SiC micro resonators were evaluated by quartz and a laser vibrometer in vacuum at room temperature. The resonant frequencies of micro resonators decreased with doping concentrations owing to reduction in the Young's modulus of poly 3C-SiC thin films. It was confirmed that the resonant frequencies of poly 3C-SiC resonators are controllable by doping concentrations. Therefore, poly 3C-SiC resonators could be applied to MEMS devices and bio/chemical sensor applications.

• Progress in Superconductivity and Cryogenics
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• v.8 no.4
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• pp.1-7
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• 2006

This paper reviews AC loss characteristics of high $T_c$ superconductors. The mechanisms of AC loss generation are explained briefly, and AC losses are classified by the magnetic field components which generate them. A couple of analytical formulae of AC losses, which are useful for simple and rough AC loss estimations, are presented. AC loss characteristics of single BSCCO multifilamentary conductors and single YBCO coated conductors are reviewed based on previous experimental and numerical studies. AC loss characteristics of those two types of practical high $T_c$ superconductors are compared with each other.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.3
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• pp.468-473
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• 2003

In this paper, for enhancement of property on a-Si:H TFTs We measure interface characteristics of ferroelectrics thin film and a-Si:H thin film. First, SrTiO$_3$ thin film is deposited bye-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C∼600^{\circ}C$. Dielectric characteristics of deposited SrTiO$_3$ films are very good because dielectric constant shows 50∼100 and breakdown electric field are 1 ∼ 1.5 MV/cm. a-SiN:H,a-Si:H(n-type a-Si:H) are deposited onto SrTiO$_3$ film to make MFNS(Meta1/ferroelectric/a-SiN:H/a-Si:H) by PECVD. After the C-V measurement for interface characteristics, MFNS structure shows no difference with MNS(Metal/a-SiN:H/a-Si:H) structure in C-V characteristics but the insulator capacitance value of MFNS structure is much higher than the MNS because of high dielectric constant of ferroelectric.