Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Characteristics of poly 3C-SiC micro resonators with doping concentrations

도핑농도에 따른 다결정 3C-SiC 마이크로 공진기의 특성

  • 정귀상 (울산대학교 전기전자정보시스템공학부) ;
  • 이태원 (울산대학교 전기전자정보시스템공학부)
  • Published : 2009.05.31
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Abstract

This paper describes the characteristics of poly 3C-SiC micro resonators with $3{\times}10^{17}{\sim}1{\times}10^{19}cm^{-3}$ doping concentrations. The 1.2 ${\mu}m$ thick cantilever and the 0.4 ${\mu}m$ thick doubly clamped beam resonators with different lengths were fabricated using poly 3C-SiC thin films. The characteristics of poly 3C-SiC micro resonators were evaluated by quartz and a laser vibrometer in vacuum at room temperature. The resonant frequencies of micro resonators decreased with doping concentrations owing to reduction in the Young's modulus of poly 3C-SiC thin films. It was confirmed that the resonant frequencies of poly 3C-SiC resonators are controllable by doping concentrations. Therefore, poly 3C-SiC resonators could be applied to MEMS devices and bio/chemical sensor applications.

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References

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